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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 230V; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -230V; Transistor Polarity:PNP; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 230V; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15 A, 230 V. Search-friendly keywords include transistor, BJT, switching, amplification, 15 A, 230 V, Bipolar Transistor, Single
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15A, 230V. Search-friendly keywords include transistor, BJT, switching, amplification, 15A, 230V, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 15,000 milliamps
- VCEO: 230 volts
- VCBO: 230 volts
- fT: 30 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Transistor Output SSR, 1-Channel, 1500V Isolation, SOP-4 Product overview: AQY230S from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing
- PD: 350 milliwatts
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANS NPN 230V 15A TO-3PL / Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Product overview: TTC5200 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- PD: 150,000 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOL, PNP, 230V, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-230V; Transition Frequency ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:-15A; DC Current Gain hFE:12hFE; Transistor RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt
- IC(max): 15,000 milliamps
- VCEO: 230 volts
- PD: 200,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN 230V 15A
- VCEO: 230 volts
- IC(max): 15,000 milliamps
- PD: 130,000 milliwatts
- TJ: 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Samsung Win Source Part Number: 1186925-IRF230 Manufacturer Homepage: www.samsung.com/Products/Semiconductor Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 237299-BSP230 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature
- V(BR)DSS: 300 volts
- PD: 1,500 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: DIP-4 Photointerrupters - Slot Type - Transistor Output ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047588-IRLR230ATF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V
- V(BR)DSS: 200 volts
- PD: 2,500 to 48,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770195-BLF8G20LS-230VJ Packaging: Reel package Package: SOT-1239B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 1.8A Gain: 18dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 55W Family Name: BLF8G20LS-230V Categories:
- Output Power: 55 watts
- Power Gain: 18 dB
- Operating Frequency: 1,810 to 1,880 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- V(BR)DSS: 200 volts
- IDSS: 9,000 milliamps
- rDS(on): 0.25 ohms
- PD: 63,000 milliwatts
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Description: MOSFET N-CH 100V 230A SOT-227B
- V(BR)DSS: 100 volts
- IDSS: 230,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 230 milliwatts
- TJ: -55 to 150 C
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Supplier: Richardson RFPD
Description: The MRFX600H-230MHZ evaluation board features NXP part MRFX600H and provides 600 Watts and 26 dB gain at 230 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 75V 230A 4.2mΩ@10V,50A 480W 4V@250uA N Channel TO-220 MOSFETs ROHS
- V(BR)DSS: 75 volts
- VGS(off): 4 volts
- rDS(on): 0.0042 ohms
- PD: 480,000 milliwatts
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET 200V 9.3A DIE
- V(BR)DSS: 200 volts
- IDSS: 9,300 milliamps
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: Acme Chip Technology Co., Limited
Description: 6PIN DARLINGTON, SINGLE OPTOCOUP
- TJ: -55 to 100 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mA 40V
- Features: Bipolar RF Transistors
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Supplier: DigiKey
Description: OPTOISO 5.3KV DARL W/BASE 6-DIP
- Isolation Voltage: 5,300 volts
- Operating Temperature: -55 to 100 C
- Input: DC
- Output: Photodarlington
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Description: 6PIN DARLINGTON, SINGLE OPTOCOUP
- Operating Temperature: -55 to 100 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 200mW 820@10mA,3V 500mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 20 volts
- fT: 350 MHz
- PD: 200 milliwatts
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Supplier: Lingto Electronic Limited
Description: CONN IC DIP SOCKET 30POS GOLD
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge
- V(BR)DSS: 60 volts
- IDSS: 1,800 milliamps
- rDS(on): 0.222 ohms
- PD: 1,500 milliwatts
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Allied Electronics, Inc.
Description: Transistor; SS T092 RF Transistor NPN 160V -Lead Free
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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