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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 230V; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 230V; Transistor Polarity:NPN; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -230V; Transistor Polarity:PNP; Collector Emitter Voltage Max:230V; Continuous Collector Current:15A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:30MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15 A, 230 V. Search-friendly keywords include transistor, BJT, switching, amplification, 15 A, 230 V, Bipolar Transistor, Single
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15A, 230V. Search-friendly keywords include transistor, BJT, switching, amplification, 15A, 230V, Bipolar Transistor, Single Bipolar Transistors.
- IC(max): 15,000 milliamps
- VCEO: 230 volts
- VCBO: 230 volts
- fT: 30 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Transistor Output SSR, 1-Channel, 1500V Isolation, SOP-4 Product overview: AQY230S from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing
- PD: 350 milliwatts
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANS NPN 230V 15A TO-3PL / Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Product overview: TTC5200 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- PD: 150,000 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOL, PNP, 230V, TO-247-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-230V; Transition Frequency ft:30MHz; Power Dissipation Pd:200W; DC Collector Current:-15A; DC Current Gain hFE:12hFE; Transistor RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt
- IC(max): 15,000 milliamps
- VCEO: 230 volts
- PD: 200,000 milliwatts
- TJ: -65 to 150 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN 230V 15A
- VCEO: 230 volts
- IC(max): 15,000 milliamps
- PD: 130,000 milliwatts
- TJ: 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Samsung Win Source Part Number: 1186925-IRF230 Manufacturer Homepage: www.samsung.com/Products/Semiconductor Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 237299-BSP230 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature
- V(BR)DSS: 300 volts
- PD: 1,500 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047588-IRLR230ATF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V
- V(BR)DSS: 200 volts
- PD: 2,500 to 48,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: DIP-4 Photointerrupters - Slot Type - Transistor Output ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770195-BLF8G20LS-230VJ Packaging: Reel package Package: SOT-1239B Frequency: 1.81GHz ~ 1.88GHz Current - Test: 1.8A Gain: 18dB Transistor Type: LDMOS Voltage - Test: 28V Power - Output: 55W Family Name: BLF8G20LS-230V Categories:
- Output Power: 55 watts
- Power Gain: 18 dB
- Operating Frequency: 1,810 to 1,880 MHz
- Features: MOSFET, MOSFET RF Transistors, Other
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- V(BR)DSS: 200 volts
- IDSS: 9,000 milliamps
- rDS(on): 0.25 ohms
- PD: 63,000 milliwatts
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Description: MOSFET N-CH 100V 230A SOT-227B
- V(BR)DSS: 100 volts
- IDSS: 230,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 47kO
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 230 milliwatts
- TJ: -55 to 150 C
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Supplier: Richardson RFPD
Description: The MRFX600H-230MHZ evaluation board features NXP part MRFX600H and provides 600 Watts and 26 dB gain at 230 MHz. The board includes mounted transistor and all associated components. Full circuit documentation is available via download from NXP (registration required). For further assistance
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 75V 230A 4.2mΩ@10V,50A 480W 4V@250uA N Channel TO-220 MOSFETs ROHS
- V(BR)DSS: 75 volts
- VGS(off): 4 volts
- rDS(on): 0.0042 ohms
- PD: 480,000 milliwatts
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET 200V 9.3A DIE
- V(BR)DSS: 200 volts
- IDSS: 9,300 milliamps
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Power Module
- Features: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: 6PIN DARLINGTON, SINGLE OPTOCOUP
- TJ: -55 to 100 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: OPTOISO 5.3KV DARL W/BASE 6-DIP
- Isolation Voltage: 5,300 volts
- Operating Temperature: -55 to 100 C
- Input: DC
- Output: Photodarlington
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Description: 6PIN DARLINGTON, SINGLE OPTOCOUP
- Operating Temperature: -55 to 100 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20V 200mW 820@10mA,3V 500mA NPN TO-236-3(SOT-23-3) Bipolar Transistors - BJT ROHS
- IC(max): 500 milliamps
- VCEO: 20 volts
- fT: 350 MHz
- PD: 200 milliwatts
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mW ElectroStatic
- V(BR)DSS: 60 volts
- IDSS: 1,500 milliamps
- VGS(off): 20 volts
- PD: 480 milliwatts
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Supplier: Allied Electronics, Inc.
Description: Transistor; SS T092 RF Transistor NPN 160V -Lead Free
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Extended temperature range Tj = 175 °C Trench MOSFET technology ElectroStatic Discharge
- V(BR)DSS: 60 volts
- IDSS: 1,800 milliamps
- VGS(off): 20 volts
- PD: 625 milliwatts
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Supplier: Lingto Electronic Limited
Description: CONN IC DIP SOCKET 30POS GOLD
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Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 250V 1A, DPAK
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