-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1240892-PVR100AZ-B3V 3 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
- Package Type: SOT3
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062220-PVR100AD-B3V3 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case
- Package Type: SOT3, Other
- Polarity: NPN, Other
-
-
Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 106417-DVR3V3W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Obsolete
- Package Type: SOT3, Other
- Polarity: NPN, Other
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-3PL Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-3 Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PRMD3/SOT1268 DFN1412-6
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Low voltage high performance NPN power transistor
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased PNP+NPN DIGITAL TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PQMD3/DFN1010B-6/REE L 7" Q2/T3
- Transistor Type: Bipolar RF Transistors
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: TO-3
-
Supplier: ODG (Origin Data Global)
Description: Transistor gasket/Nylon gasket
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH3
- Polarity: NPN, PNP
- Transistor Type: Bipolar RF Transistors
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Package Type: TO-3, Other
- Polarity: NPN
-
Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
-
Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 1µA 800mW Through Hole TO-39 (TO-205AD)
- Package Type: TO-3, Other
- Polarity: PNP
-
Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
-
Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
-
Supplier: ODG (Origin Data Global)
Description: RF SMALL SIGNAL TRANSISTOR
- Noise Figure: Over 0.6000 dB
- Output Power: 0.1500 watts
- Package Type: Other
- Polarity: NPN, Other
-
Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
-
Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small
- Package Type: TO-3, TO-39, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Transistor Type: Power BJT Transistors
-
Supplier: Integrated Device Technology
Description: The 72V06 is a 16K x 9 dual-port FIFO that operates at Vcc between 3.0V and 3.6V. The device will load and empty data on a first-in/first-out basis. It uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit ( RT ) capability that
- Access Time: 25 ns
- Density: 144 kbits
- IC Package Type: PLCC
- Logic Family: Transistor-Transistor Logic (TTL)
-
Supplier: Radwell International
Description: TRANSISTOR 30V 3PIN. FREE 2 YEAR RADWELL WARRANTY
-
Supplier: Integrated Device Technology
Description: The 72V831is a 2K x 9 dual synchronous FIFO that is functionally equivalent to two 72V231 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. Each FIFOs has a 9-bit input and output data port. The Read Clock can be tied to the Write
- Communication Type: Synchronous
- Data Rate: 66 MHz
- Density: 18 kbits
- IC Package Type: TQFP
-
Supplier: Acme Chip Technology Co., Limited
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
-
Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors BL RF
- Output Power: 350 watts
- Packing Method: Tape Reel, Other
- Power Gain: 19.2 dB
- Transistor Type: MOSFET RF Transistors
-
Supplier: TE Connectivity
Description: Configuration Features Number of Positions : 3 Number of Solder Lugs : 2 Contact Features Contact Current Rating (Max) (AMP) : 10 Mating Pin Diameter (INCH
- Contact Plating: Other
- Current Rating: 10 amps
- Mounting: Other
- Number of Contacts: 3
-
Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Littelfuse, Inc.
Description: The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International
- Package Type: TO-3, Other
- Polarity: N-Channel
-
Supplier: Rochester Electronics
Description: Bipolar NPN Transistor, 70MA 16V FT=3G
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
Find Suppliers by Category Top
Featured Products Top
-
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo