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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3 V. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3 V, Bipolar Transistor, Transistor, Photovoltaic Output
- IC(max): 8 milliamps
- PD: 100 milliwatts
- hfe: 50
- TJ: -40 to 85 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet,
- TJ: 0 to 70 C
- Features: IGBT, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 5V. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 5V, Bipolar Transistor,
- PD: 45 milliwatts
- Features: Bipolar RF Transistors, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 106417-DVR3V3W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 30V, 3A, SOT-32-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1240892-PVR100AZ-B3V3 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 100V, 3A, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 062220-PVR100AD-B3V3 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-TSOP Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 2-Ch Transistor Optocoupler, 5.3kV Isolation, 70V VCEO, PDIP Product overview: ILD615-3 from Vishay is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 50 milliamps
- PD: 400 milliwatts
- hfe: 200
- TJ: -55 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 3A, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, -40V, -3A, TO-225-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:3MHz; Power Dissipation Pd:30W; DC Collector Current:-3A; DC Current Gain hFE:10hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 107261-PVR100AZ-B3V3,115 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN + Zener Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-223 Maximum Current
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 20V 3A 1.25W 60mΩ@4.5V,2.8A 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 16A 140V, TO-3 PKG
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 850V 15A, TO-3 PKG
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 20A, TO-3 PKG
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR DARLINGTON NPN 100V 20A, TO-3 PKG
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN + Zener Diode (Isolated) 18V 1A 100MHz 200mW Surface Mount SOT-363
- Polarity: NPN
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors IGBT
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
- Features: Bipolar RF Transistors
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3
- IC(max): 3,000 milliamps
- VCEO: 30 volts
- PD: 800 milliwatts
- Output Power: 0.8 watts
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Supplier: Acme Chip Technology Co., Limited
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
- TJ: -55 to 100 C
- Features: Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply.
- V(BR)DSS: 30 volts
- IDSS: 3,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply.
- V(BR)DSS: 30 volts
- IDSS: 3,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
- Package Type: TO-3
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Supplier: Richardson RFPD
Description: 3-phase bridge rectifier + brake chopper + 3-phase bridge inverter intelligent power module
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR573D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 400V 30W 20@500mA,5V 3A NPN TO-126 Bipolar Transistors - BJT ROHS
- IC(max): 3,000 milliamps
- VCEO: 400 volts
- PD: 30,000 milliwatts
- hfe: 20
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Description: TRANS NPN 18V 1A SOT363
- VCEO: 18 volts
- IC(max): 1,000 milliamps
- Features: General Purpose BJT, Other
- Packing Method: Tape Reel
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: -60 volts
- IC(max): -3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: 100 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 60 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Qorvo
Description: Qorvo's QPD3800 is a discrete GaN on SiC HEMT which operates from 3.4-3.8 GHz. The device is a single stage matched power amplifier transistor. The QPD38000 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency
- Power Gain: 21 dB
- Operating Frequency: 3,400 to 3,800 MHz
- Features: Other
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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