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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, PNP, -300V; Transistor Polarity:PNP; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:1W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:150mA; Power Dissipation:150mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:500mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:75MHzRoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:500mA; Power Dissipation:200mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V. Search-friendly keywords include transistor, BJT, switching, amplification, 300V, Bipolar Transistor, Bipolar RF Transistors. This listing supports
- IC(max): 1,000 milliamps
- VCEO: 60 volts
- VCBO: 300 volts
- fT: 100 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 300V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 300V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANS NPN 300V 0.1A TO92-3 / Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3 Product overview: KSC2330RTA from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic
- VCEO: 300 volts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300 V. Search-friendly keywords include transistor, BJT, switching, amplification, 300 V, Bipolar Transistor, Transistor, Photovoltaic
- IC(max): 125 milliamps
- PD: 250 milliwatts
- TJ: -55 C
- Features: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses all gold transistor metallization to provide highest
- Power Gain: 15.3 dB
- Output Power: 300 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: Transistor; Programmable Unijunction; 40 V; 300 mW
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP, 300V 0.5A SOT-32 PKG
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR PNP 300V 0.5A
- Features: Other
- Polarity: PNP
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 4-Match NPN Trans Ar Hfe 300, 36V/30mA
- Features: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: SEMITRANS® 3 Features V-IGBT = 6. Generation Trench V-IGBT (Fuji) CAL4 = Soft switching 4. Generation CAL-diode Isolated copper baseplate using DBC technology (Direct Copper Bonding) Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical
- Features: IGBT, Other
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 100 milliamps
- VCEO: 45 volts
- fT: 150 MHz
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92 Features and benefits High voltage (max. 300 V) AEC-Q101 qualified Applications Telephony and professional communication equipment
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: IGBT Module Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 237306-BSP300 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active
- V(BR)DSS: 800 volts
- PD: 1,800 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 858894-A2V09H300-04NR3 Features: RF Mosfet LDMOS 48 V 400 mA 720MHz ~ 960MHz 19.7dB 53dBm OM-780G-4L Package: Reel - TR Package: OM-780G-4L Family Name: A2V09 Categories: Discrete Semiconductor Products Case / Package: OM-780G-4L ECCN: EAR99 Popularity:
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar (BJT) ROHS
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; 300MW DISSIPATION; SOT-23
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET HEMT 50V 55-KR
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016225-FDY300NZ Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Family Name: FDY300NZ Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- V(BR)DSS: 20 volts
- PD: 625 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Utmel Electronic Limited
Description: NPN 500mA 300V 300mW SOT23 Transistors (NPN/PNP) RoHS
- Polarity: NPN, PNP
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors XPT 600V IGBT 300A
- Features: IGBT
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Supplier: Microchip Technology, Inc.
Description: Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast
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Supplier: Microchip Technology, Inc.
Description: Power MOS 7® is a family of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions, Inc. Product Type: Transistor Output Optocouplers Output Type: Phototransistor Isolation Voltage: 1500 Vrms Number of Channels: 1 Channel Mounting Style: SMD/SMT Power Dissipation: 50 mW
- Package Type: SOT3
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Supplier: Integra Technologies, Inc.
Description: The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are 100% screened
- Power Gain: 14.5 dB
- Output Power: 300 watts
- Operating Frequency: 1 to 200 MHz
- Features: Other, Power MOSFET
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Supplier: Utmel Electronic Limited
Description: NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
- V(BR)DSS: 60 volts
- rDS(on): 5 ohms
- PD: 830 milliwatts
- TJ: -65 to 150 C
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Description: TRANSISTOR,BIPOLAR,RADAR,300W,1.
- VCEO: 90 volts
- Output Power: 583 watts
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT MODULE, 2IN1, 650V/300A
- Output Power: 961 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Classic Automation LLC
Description: No Description Provided
- Data Acquisition: I/O Module
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Phototransistor Output
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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