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Supplier: Micro-Epsilon Group
Description: The IMP-NIR-TH24 is a wafer thickness sensor with a 24 mm ±3.0 mm working distance, a 21 to 27 mm operating range and a measuring range of 50 µm to 1.05 mm for silicon and 0.2 to 4 mm for air gaps. It provides a 15 µm light spot for precise inline wafer measurements.
- Operating Temperature: 50 to 122 F
- Features: Other
- Measurement Capability: Specialty / Other, Thickness
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Supplier: MicroSense, LLC
Description: Automated Wafer Thickness Measurement System Cassette to cassette or manual loading. Exclusive sensing technology with dual White light chromatic coding probes (10nm resolution) Wafer 4” to 12” (100 to 300mm) Thickness range: 50um to 3mm Extended warpage range up
- Maximum Wafer / Part Size: 100 to 300.00000000000006 mm
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
- Features: Non-contact
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Supplier: MTI Instruments Inc.
Description: The Proforma 300SA is a benchtop/desktop, semi-automated wafer measurement system for semi-conducting and semi-insulating materials. Based on MTII’s exclusive Push-Pull capacitance technology, the Proforma 300SA delivers full wafer surface scanning for thickness,
- Maximum Wafer / Part Size: 300.00000000000006 mm
- Measurements: Area Mapping, Roughness / Waviness, Shape / Flatness, Thickness - Wafer / Disc (TTV)
- Technology: Capacitance / EM Gage
- Mounting / Loading: Manual Loading
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Supplier: Rigaku Corporation
Description: elements such as B and P in BPSG film has been improved significantly by employing a 4kW high power X-ray tube with a super thin window beryllium window. The instrument employs a wafer height adjustment mechanism to compensate for differences in wafer thickness and a diffraction
- Maximum Wafer / Part Size: 150.00000000000003 to 300.00000000000006 mm
- Measurements: Composition, Thickness - Film / Layer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
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Supplier: MacDermid Alpha Electronics Solutions
Description: Product Overview The MICROFAB SN-300/302 process is a high-speed, Methanesulfonate (MSA)-based pure tin plating solution. It produces fine-grained, matte to semi-bright pure tin deposits. The formulation is designed to provide excellent thickness distribution across the wafer and
- Chemical / Composition: Nickel Plating - Hard, Tin Plating
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Supplier: ASTM International
Description: approximately and larger in thickness, independent of thickness variation and surface finish, and of wafer shape. 1.3 This test method measures the flatness of the front wafer surface as it would appear relative to a specified reference plane when the back surface of the
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Supplier: Monocrystal, Inc.
Description: Wafers and blanks are produced from crystals grown using the Kyropoulos method. Advantages of our wafers: high material purity: > 99.997%; low impurity content Ti: < 1 ppm; low dislocation density: < 103 cm-2; orientation tolerance: up to ± 0.05 degrees. Sapphire wafers for
- Thickness / Wall Thickness: 0.005905515 to 0.0393701 inch
- Diameter: 2 to 10 inch
- Width / O.D.: 2 to 10 inch
- Features: Dielectric Ceramics / Materials
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Supplier: ASTM International
Description: wafers 50 mm or larger in diameter, and 100 μm (0.004 in.) approximately and larger in thickness, independent of thickness variation and surface finish, and of wafer shape. 1.3 This test method measures the flatness of the front wafer surface as it would appear
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Supplier: ABTech, Inc.
Description: ABTech’s standard thickness gages include Heidenhain Metro probes, Gage-Chek DRO®, Granite plate, stainless steel probe stands and probe actuator control box. These thickness gages allow the user to accurately measure thickness down to 1 micron without having to hold the part or
- Range: 0.984 inch
- Graduation / Resolution: 0.00000393701 inch
- Resolution: 0.00000393701 inch
- Mounting / Loading Options: Benchtop / Floor
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Description: Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6" aluminum nitride wafers and 8" AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides,
- Specialty Ceramic Type: Aluminum Nitride
- Features: Other, Specialty / Other, Specialty Ceramic
- Shape / Form: Wafer / Substrate
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Description: HTOT has a full wafering line and can deliver wafer sustrates or completely finished wafers to the specifications outlined below. All wafers are produced from low stress high purity, LED grade HEM grown sapphire with a uniform crystalline structure, free of subgrains, bubbles
- Width / O.D.: 1.968505 inch
- Thickness / Wall Thickness: 0.016929143 to 0.025590565 inch
- Applications: Abrasive / Erosive Wear Protection, Optics / Optical Grade, Wear Parts / Tooling
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Supplier: Gavish, Inc.
Description: 0.020”, 2 x 2 x 0.010” in both R and C plane orientation Specialty sapphire dummy wafers in 150 and 200 mm diameters, single side polished with flat, or notch configuration Sapphire Optical substrates and optical filter substrates – sizes and thickness per customer specifications with
- Length: 2 inch
- Width / O.D.: 2 to 7.87402 inch
- Thickness / Wall Thickness: 0.01 to 0.02 inch
- Features: Dielectric Ceramics / Materials, Optics / Optical Grade
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Supplier: MTI Instruments Inc.
Description: The Proforma 300i wafer thickness gage is a capacitance based, differential measurement system that performs non-contact thickness measurements of semiconducting and semi-insulating wafers. By utilizing MTI Push/Pull technology, the Proforma 300i does not require the
- Maximum Wafer / Part Size: 76 to 300.00000000000006 mm
- Measurements: Area Mapping, Roughness / Waviness, Shape / Flatness, Thickness - Wafer / Disc (TTV)
- Technology: Capacitance / EM Gage
- Mounting / Loading: Manual Loading
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Supplier: ASTM International
Description: reference plane for determining warp. 1.2 The test method is applicable to circular silicon wafers 50 mm or larger in diameter, and 100 [mu]m (0.004 in. approximately) and larger in thickness, independent of thickness variation and surface finish. The test method is applicable
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Supplier: Filmetrics, Inc.
Description: measures semiconductor materials. The thickness range is determined by the lens and software options (see datasheet for details). Thickness can be measured in less than a second. Like all Filmetrics thickness measurement instruments, the F70 connects to the USB port of your
- Range: 0.0000005905515 to 0.5118113 inch
- Mounting / Loading Options: Benchtop / Floor
- Measurement Scale / Units: Metric
- Gaging Technology: Non-contact, Optical
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Supplier: Plansee SE
Description: Wafer substrates are bonded to the semiconductor layers of LED chips. With molybdenum and molybdenum-copper wafer substrates, PLANSEE offers the optimum material for a reliable heat dissipation in LED chips. The uniform thermal expansion of the wafer substrate, sapphire
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Supplier: 3X Ceramic Parts Company Limited
Description: φ150mm ) silicone wafer , thickness 675 um . They want this part in 99% alumina ceramic . We don’t have the standard wafer boats for customer wafer size , but we custom made it . Before this projects , we have made a 99% alumina horizontal wafer boat , it is for
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
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Supplier: Filmetrics, Inc.
Description: Automated Film Thickness Mapping The Filmetrics F50 family of products can map film thickness as quickly as two points per second. A motorized R-Theta stage accepts standard and custom chucks for samples up to 450mm in diameter. Map patterns can be polar, rectangular, or linear, or you
- Measurements: Area Mapping
- Applications: CVD / PVD Films, Semiconductor Wafers
- Mounting / Loading: In-situ / System Mounted
- Form Factor: Monitor / Instrument
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Supplier: Ushio America, Inc.
Description: work at varying thickness when the irradiation distance deviates slightly from 50 mm.
- Lamp Intensity: 150 mW/cm²
- Features: Other
- Spectral Range: UVA (Long Wave)
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Supplier: Jiangyin Deli Laser Solutions Co., Ltd.
Description: Fast scribing speeds; High throughput; High-quality processing results; Significant improvements in yield rates; No consumables; Greatly reduces operating costs. Laser type: DPSS picosecond laser (532nm & 1064nm) Laser power: ≥1W Cooling method: Closed-loop water cooling X-axis: 300mm travel
- X-axis Travel / Length Capacity: 11.81103 inch
- Y-axis Travel / Width Capacity: 11.023628 inch
- Z-axis / Vertical Travel: 0.1968505 inch
- Laser Output Power: 0 to 1 watts
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Supplier: Filmetrics, Inc.
Description: Automated Cassette-to-Cassette Thin-Film Thickness Mapping System for Production Environments The Filmetrics F60-c family maps film thickness and index just like our F50 products, but it also includes a number of features intended specifically for production environments. These include
- Measurements: Area Mapping
- Applications: CVD / PVD Films, Semiconductor Wafers
- Mounting / Loading: In-situ / System Mounted
- Form Factor: Monitor / Instrument
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Supplier: ASTM International
Description: 1.1 This test method covers determination of the average amount of bow of nominally circular silicon wafers, polished or unpolished, in the free (non-clamped) condition. 1.2 This test method is intended primarily for use with wafers that meet the dimension and tolerance requirements of
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Supplier: Rigaku Corporation
Description: The WDA-3650 X-ray fluorescence spectrometer for thin film evaluation continues Rigaku's 30-year history of XRF wafer analyzers that has mirrored the history of thin film device development. This latest XRF metrology tool contributes significantly to the process control of metal film
- Maximum Wafer / Part Size: 200 mm
- Measurements: Composition, Thickness - Film / Layer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
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Supplier: Rigaku Corporation
Description: MFM65 is designed with high-volume 200mm and 300mm manufacturing in mind: high-throughput thickness measurement by XRR and XRF, low-contamination wafer handling and pattern recognition-based position control for product wafer measurements, CE Marking and S2/S8 Compliance
- Maximum Wafer / Part Size: 200 to 300.00000000000006 mm
- Measurements: Composition, Particle Contamination, Roughness / Waviness, Thickness - Film / Layer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
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Supplier: Zygo Corporation
Description: Wafer production technology requires extreme precision components, whether for reticle stages, wafer stages or imaging technologies. ZYGO is a leading supplier of stage positioning components, serving the semiconductor industry and emerging EUV technologies through multiple custom
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Supplier: StellarNet, Inc.
Description: integrated circuits. Systems are also used during MEMS patterning processes to measure photoresist thickness and uniformity. These systems are also being used during silicon etching to measure etch rate and membrane thickness and uniformity. Thickness measurement of thick
- Applications: CVD / PVD Films, Data Storage / Memory, Flat Panel Displays, Optical Components, Polishing / CMP, Polymers / Photoresists, Semiconductor Wafers
- Mounting / Loading: In-situ / System Mounted
- Form Factor: Monitor / Instrument
- Features: Non-contact, Non-destructive, Other
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Supplier: KEYENCE
Description: smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications: Wafer Thickness Glass Thickness Surface Mapping Stage
- Features: Autoloading / In-line, Non-contact, Non-destructive
- Form Factor: Controller, Monitor / Instrument, Sensor / Sensing Element
- Applications: Data Storage / Memory, Flat Panel Displays, Packaged ICs / Ceramic Substrates, Semiconductor Wafers
- Mounting / Loading: Floor Mounted / Stand-alone, In-situ / System Mounted
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Supplier: KEYENCE
Description: smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications: Wafer Thickness Glass Thickness Surface Mapping Stage
- Features: Autoloading / In-line, Non-contact, Non-destructive
- Form Factor: Controller, Monitor / Instrument, Sensor / Sensing Element
- Applications: Data Storage / Memory, Flat Panel Displays, Packaged ICs / Ceramic Substrates, Semiconductor Wafers
- Mounting / Loading: Floor Mounted / Stand-alone, In-situ / System Mounted
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Supplier: Quorum Technologies
Description: For oxidising metals see Q300T T and Q300T D * Precise thickness control using the film thickness monitor option * Fully automatic touch screen control - rapid data input, simple operation * Multiple, customer-defined coating schedules can be stored - ideal for multi-user laboratories
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Supplier: Quorum Technologies
Description: applications. NB: To avoid a short target life, it is not advisable to use targets of less than 0.3mm for coatings of 50nm or thicker in conjunction with high sputter currents. Please consider using a bonded or thicker target * Precise thickness control using the film thickness monitor
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Supplier: SCHOTT AG
Description: glass manufactured by SCHOTT using a special down-draw method that the company developed on its own. This makes it possible to manufacture products of between 0.03 mm and 1.1 mm in thickness. SCHOTT offers B 270® i crown glass in sheet glass form to meet a wide variety of different market
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Supplier: Henkel Corporation - Electronics
Description: wafer metallizations and leadframe finishes. It can be used in a variety of die sizes ranging from 0.2mm x 0.2mm to 4mm x 4mm. KEY BENEFITS: High MSL reliability Controlled fillet size No resin bleed-out Consistent bondline thickness Pre-cut wafer lamination equipment compatible
- Type: Electrically Conductive
- Industry: Electronics (PCB / SMT Assembly)
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Supplier: Wafer World, Inc.
Description: Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25Wafer World, Inc. is a privately held company founded by Sean Quinn in 1997. The
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Supplier: KEYENCE
Description: smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications:• Wafer Thickness• Glass Thickness• Surface Mapping• Stage
- Measurement Range: 0.002 to 0.04 inch
- Sampling Frequency: 5 kHz
- Operating Temperature: 32 to 185 F
- Features: Class 1/1M, Class I, LED, Other Receiver, Point / 1-Dimentional
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. The thickness measurement range extends from 0.05 to 1.05 mm. The measurable thickness of air gaps is even up to 4 mm. Maximum precision is essential in the production of semiconductor wafers. An important process step is the lapping of the silicon blanks (read more)
Browse Interferometers Datasheets for Micro-Epsilon Group -
With the IMP-NIR-TH3/90/IP68 sensor, Micro-Epsilon is expanding its interferoMETER portfolio with a particularly robust sensor for inline thickness measurement of Si and SiC wafers. The sensor has a 90° beam path and a small working distance of just 3 mm, making it ideal for applications (read more)
Browse Interferometers Datasheets for Micro-Epsilon Group -
- Vickers hardness: >= 2500 HV - Thermal expansion: 4 ppm/C Fork Specifications - Wafer sizes: 150 mm, 200 mm, 300 mm - Fork length: 100-500 mm (custom) - Fork width: 20-100 mm (custom) - Thickness: 2-8 mm - Thickness tolerance: +/- 0 (read more)
Browse Industrial Ceramic Materials Datasheets for Fountyl Technologies Pte. Ltd. -
semiconductor nodes shrink, wafer flatness during processing becomes critical. Our high-precision porous ceramic vacuum chucks (Chucks) are specifically designed to meet the rigorous demands of 300mm (12-inch) wafer thinning, dicing, and inspection (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
dimensions shrank, the limitations of metal became harder to ignore. Why Alumina Outperforms Metal The end effector must be stiff enough to carry a 300mm wafer at high speed without vibration, yet thin enough to reach into tight chamber clearances. Aluminum end effectors are (read more)
Browse Industrial Ceramic Materials Datasheets for Fountyl Technologies Pte. Ltd. -
· Wafer units from Ø10mm and with varying thicknesses These capacitive sensors suit the smallest locations. Three styles are available-adhesive, wafer, and cylindrical. The adhesive sensor is flexible up to 15 degrees around a (read more)
Browse Capacitive Proximity Sensors Datasheets for Locon Sensor Systems, Inc. -
distance adjustable on the amplifier Cylindrical units from Ø4mm Wafer units from Ø18mm and with varying thicknesses External amplifiers available in PNP, NPN, NO, and NC outputs (read more)
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– – Specifications and Dimensions Size(mm) Thickness ( mm ) 0.25 0.38 0.5 0.635 0.76 1 (read more)
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consistency inspection of PC keyboard keys Wafer thickness and flatness measurement Bottle thickness measurement Medical tube inspection Step height measurement of PCB components Delivery time: Within 5 business days (read more)
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consistency inspection of PC keyboard keys Wafer thickness and flatness measurement Bottle thickness measurement Medical tube inspection Step height measurement of PCB components Delivery time: Within 5 business days (read more)
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Piezoelectric MEMS array package for distributed CMP pressure control
200 and 300 mm Wafer thicknesses .
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Advanced Flip Chip Packaging
100– 300 mm Wafer thickness .
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Materials for Advanced Packaging
100– 300 mm Wafer thickness .
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IR microscopy as an early electrical yield indicator in bonded wafer pairs used for 3D integration
Wafers exiting a face-to-face copper bonding process have their overlay alignment fiducials at the interface of the bonded wafer pair, buried under approximately 775 microns of silicon (nominal 300mm wafer thickness specified in SEMI® M.15).
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HCl gas gettering of low‐cost silicon
This is an acceptable value for the used wafer thickness ( 300 mm ) and for gettering processes, which do not exceed a process time of 30 min, since the etched amount of silicon is not too high (<60 mm) and the remaining wafer …
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Inspection and metrology for through-silicon vias and 3D integration
TSVs are etched into 775 micron full thickness 300mm wafers .
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Critical dimension uniformity control with combined ellipsometry and reflectometry
CDU results with SE with wavelength range of 240nm – 780 nm for 577 die on a 300mm wafer with thickness of Resist, BARC, SION, and polysilicon floating and TCD, MCD, and BCD for resist.
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A new method for measuring the flatness of large and thin silicon substrates using a liquid immersion technique
For the 300mm wafers with thickness of 100 μm, the total error for the flatness measurement is less than 11 μm, among which Erg is the largest error source, followed by Ewm and Egu.
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Production of silicon mirror plates
As shown in Figure 1, the production of Si mirror plates starts with dicing square plates from 300mm silicon wafers ( thickness 0.775 mm).
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Numerical analysis of thermal effects in InGaAs system vertical-external-cavity surface-emitting laser
The temperature, the heat flux and the temperature gradient of the wafer with 300 mm thickness diamond heatspreader and 0 mm thickness substrate are shown in Fig. 6.
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