300mm Wafer Thickness

Description: -cassette - option spindle - for 200mm wheel - std. for 100mm wheel - option for notch wheel - option thickness gauge - contact 1 pt. - option contact multi pts. - option non-contact multi. pts. - option alignment unit - edge non-contact - selectable edge grip

• Applications: Semiconductor Wafers

Description: ) (selectable) Thickness Measurement Unit: Multi-point measurement Fine alignment: Edge contact or non-edge contact Qty of grid axis: Two stations Spindle: [1] Horizontal circumference grinding (coarse) Metal-bonded wheel (100mm) (Optional), [2] Vertical circumference

• Applications: Semiconductor Wafers
• Maximum Wafer / Part Size: 50.8 to 203 mm
• Mounting / Loading: Manual Loading

Description: Rigaku's WaferX 300 represents the culmination of 25 years of experience in the X-ray fluorescence analysis of thin films on silicon wafers. Specifically developed as an in-process metrology tool, the system incorporates "bridge tool" technology — servicing 6", 8", as well as

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 150 to 300 mm
• Measurement Capability: Composition, Thickness - Film / Layer

Description: Automated Thickness measurement system IR interferometry probe technology. Single or dual probes. Manual Loading 0.5um accuracy. 0.1um resolution Wafer 4" to 12" (100 to 300mm) round or square Thickness range: 20um to 1mm Flexible recipe

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 100 to 300 mm
• Measurement Capability: Shape / Flatness, Thickness - Wafer / Disc (TTV)

Description: Automated Wafer Thickness Measurement System Cassette to cassette or manual loading. Exclusive sensing technology with dual White light chromatic coding probes (10nm resolution) Wafer 4” to 12” (100 to 300mm) Thickness range: 50um to 3mm

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 100 to 300 mm
• Measurement Capability: Roughness / Waviness, Thickness - Wafer / Disc (TTV)

Description: The Proforma 300SA is a benchtop/desktop, semi-automated wafer measurement system for semi-conducting and semi-insulating materials. Based on MTII’s exclusive Push-Pull capacitance technology, the Proforma 300SA delivers full wafer surface scanning for thickness,

• Applications: Semiconductor Wafers
• Area Mapping: Yes
• Form Factor: Wafer Probing System, Sensor / Sensing Element
• Maximum Wafer / Part Size: 300 mm

Description: Automated Thickness measurement system Cassette to cassette or manual loading. Patented sensing technology with APBP (dual automated positioning backpressure probes). Manual Loading 20mm resolution Wafer 2" to 12" (50 to 300mm) round or square

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 50 to 300 mm
• Measurement Capability: Shape / Flatness, Thickness - Wafer / Disc (TTV)

Description: Benchtop, automated Thickness measurement systems Cassette to cassette or manual loading Exclusive sensing technology with dual White light chromatic coding probes (10nm resolution) Wafer 2” to 4” (50 to 100mm). Thickness range: 50um to 3mm

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 50 to 100 mm
• Measurement Capability: Thickness - Wafer / Disc (TTV)

Description: 0.1mm 150± 0.2mm Thickness 430 µm ± 10µm 650 µm ± 20µm Primary Flat Length 16 ± 0.5mm 16 ± 0.5mm 16 ± 0.5mm TTV =5µm

• Applications: Abrasive / Erosive Wear Protection, Optics / Optical Grade, Wear Parts / Tooling
• Thickness / Wall Thickness: 0.0169 to 0.0256 inch
• Width / O.D.: 1.97 inch

Description: substrates for electronic applications 2 x 2 x 0.020”, 2 x 2 x 0.010” in both R and C plane orientation Specialty sapphire dummy wafers in 150 and 200 mm diameters, single side polished with flat, or notch configuration Sapphire Optical substrates and optical

• Length: 2 inch
• Material Type: Sapphire
• Shape / Form: Wafer / Substrate
• Thickness / Wall Thickness: 0.0100 to 0.0200 inch

Description: The Proforma 300i wafer thickness gage is a capacitance based, differential measurement system that performs non-contact thickness measurements of semiconducting and semi-insulating wafers. By utilizing MTI Push/Pull technology, the Proforma 300i does not

• Applications: Semiconductor Wafers
• Area Mapping: Yes
• Form Factor: Wafer Probing System, Sensor / Sensing Element
• Maximum Wafer / Part Size: 76 to 300 mm

Description: hand tools such as a micrometer. The part under test is positioned on the granite plate while the probes are slowly activated to come in contact with the part. These turn key systems are available in single or dual probe configurations and are ideal for measuring thickness of wafers,

• Gaging Technology: Mechanical
• General Gage Type: Custom / OEM Gage
• Graduation / Resolution: 3.94E-6 inch
• Material Thickness: Yes

Description: per customer specifications. Wafer thickness varies from 0.15 mm to 1.0 mm depending on the field of application. Our equipment enables the control of wafer production from the moment of crystal growth to manufacturing of the final product.

• Applications: Electronics / RF-Microwave
• Material Type: Sapphire
• Shape / Form: Wafer Carrier / Holder
• Thickness / Wall Thickness: 0.0059 to 0.0394 inch

Description: wavelengths (e.g. F60-t-UV) are required to measure thinner films, while longer wavelengths allow measurement of thicker, rougher, and more opaque films. What's Included Integrated Stage/Spectrometer/L ight Source Unit (chuck not included) 4", 6" and 200mm Reference Wafers

• Applications: Semiconductor Wafers, CVD / PVD Films
• Area Mapping: Yes
• Form Factor: Monitor / Instrument
• Mounting / Loading: In-situ / System Mounted

Description: Integrated Spectrometer/Light Source Unit Fiber optic cable 4", 6" and 200mm Reference Wafers TS-SiO2-4-7200 Thickness standard Vacuum Pump Spare TH-1 lamp Tweezers

• Applications: Semiconductor Wafers, CVD / PVD Films
• Area Mapping: Yes
• Form Factor: Monitor / Instrument
• Mounting / Loading: In-situ / System Mounted

Description: not included) 4", 6" and 200mm Reference Wafers TS-SiO2-4-7200 Thickness standard Vacuum Pump Spare TH-1 lamp Tweezers

• Applications: Semiconductor Wafers, CVD / PVD Films
• Area Mapping: Yes
• Form Factor: Monitor / Instrument
• Mounting / Loading: In-situ / System Mounted

Description: molybdenum (142 W/mK). The benefit to you: even better heat dissipation in your sapphire-based LED chips. Our molybdenum and MoCu wafer substrates are available in thicknesses from 0.05 mm and diameters up to 300 mm (12 inches). Even diameters of 8 inches or more

Description: The F70s are general-purpose thickness measurement instruments that are capable of measuring thicknesses up to 13mm. Common applications include glass and plastic sheets, lenses, and containers and semiconductor wafers. The basic F70 is designed to measure transparent

• Gaging Technology: Optical, Optical - Video / Imaging
• Mounting / Loading: Benchtop / Floor
• Range: 5.91E-7 to 0.5118 inch
• Units: Metric

Description: Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6" aluminum nitride wafers and 8" AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to

• Applications: Other
• Performance Features: Specialty / Other
• Shape / Form: Wafer / Substrate
• Specialty Ceramic Type: Aluminum Nitride

Description: film and/or optical measurement requirements. Thin Film Applications Solar PV Increased production of Thin-Film Photovoltaics (TFPVs) is becoming more predominant due to lower costs than their silicon-wafer-based cousins. Getting accurate thickness

• Applications: Semiconductor Wafers, CVD / PVD Films, Data Storage / Memory, Flat Panel Displays, Optical Components , Polishing / CMP, Polymers / Photoresists, Other
• Form Factor: Monitor / Instrument
• Measurement Capability: Thickness - Film / Layer, Thickness - Wafer / Disc (TTV)
• Mounting / Loading: In-situ / System Mounted

Description: is applicable to wafers 50 mm or larger in diameter, and 100 µm (0.004 in.) approximately and larger in thickness, independent of thickness variation and surface finish, and of wafer shape. 1.3 This test method measures the flatness of the front wafer

Description: 1.1 This test method covers a noncontacting, non-destructive procedure to determine the thickness and flatness of clean, dry, semiconductor wafers in such a way that no physical reference is required. 1.2 This test method is applicable to wafers 50 mm or larger in

Description: Project : In May , 2018, A Denmark customer requesting us a horizontal boats for 6 inch ( f150mm ) silicone wafer , thickness 675 um . They want this part in 99% alumina ceramic . We don’t have the standard wafer boats for customer wafer size , but we custom made

• Material Type: Carbide Materials, Silicon Carbide
• Shape / Form: Fabricated / Custom Shape

Description: closely spaced. For boron applications, the available AD-Boron channel provides 5-times greater sensitivity than previous models. The AutoCal function and built-in internal wafer stocker, previously only available on 300mm tools, enable fully-automated daily tool qualification

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 200 mm
• Measurement Capability: Composition, Thickness - Film / Layer

Description: thickness: 1.2mm Automatic workpiece loading and unloading Processing method: Backside cutting Cutting speed: 0-800mm/s Cutting line width: <5µm Dicing street width: =300µm Positional accuracy: ±10µm (between parallel lines) Applicable workpiece materials: Transparent

• Laser Output Power: 0.0 to 1 watts
• Materials Processed: Metal / Conductive Materials, Semiconductors / Electronics, Soft / Fibrous (Wood, Foams, Textiles)
• Unit Type: Work Station

Description: Hardening photoresist and coating curved lens surfaces. FEATURES & BENEFITS Ushio’s unique lens design miniaturizes systems by 56% while increasing energy efficiency over standard devices (in the 200 mm type case). Because there is almost no illuminance reduction, no fine adjustment is needed

• Application: Other
• Lamp Intensity: 150 mW/cm²
• Spectral Range: UVA (Long Wave)

Description: . The MFM65 is designed with high-volume 200mm and 300mm manufacturing in mind: high-throughput thickness measurement by XRR and XRF, low-contamination wafer handling and pattern recognition-based position control for product wafer measurements, CE Marking

• Applications: Semiconductor Wafers
• Form Factor: Monitor / Instrument
• Maximum Wafer / Part Size: 200 to 300 mm
• Measurement Capability: Composition, Particle Contamination, Roughness / Waviness, Thickness - Film / Layer

Description: surface reference plane for determining warp. 1.2 The test method is applicable to circular silicon wafers 50 mm or larger in diameter, and 100 [mu]m (0.004 in. approximately) and larger in thickness, independent of thickness variation and surface finish. The test method

Description: to see even the smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications: Wafer Thickness Glass Thickness Surface

• Applications: Semiconductor Wafers, Data Storage / Memory, Flat Panel Displays, Packaged ICs / Ceramic Substrates
• Form Factor: Monitor / Instrument, Controller, Sensor / Sensing Element
• Measurement Capability: Shape / Flatness, Thickness - Film / Layer
• Mounting / Loading: In-situ / System Mounted, In-line, Floor Mounted / Stand-alone

Description: to see even the smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications: Wafer Thickness Glass Thickness Surface

• Applications: Semiconductor Wafers, Data Storage / Memory, Flat Panel Displays, Packaged ICs / Ceramic Substrates
• Form Factor: Monitor / Instrument, Controller, Sensor / Sensing Element
• Measurement Capability: Shape / Flatness, Thickness - Film / Layer
• Mounting / Loading: In-situ / System Mounted, In-line, Floor Mounted / Stand-alone

Description: customers have turned to ZYGO for such things as burled or pin chucks, reticle chucks, and stage positioning systems. ZYGO custom manufactures high precision optical components for 300 mm and 450 mm wafer handling – and even meter-class semiconductor photolithography

Description: , that have a diameter of 25 mm or greater, a thickness of 0.18 mm or greater, and a ratio of diameter to thickness up to 250. Wafers to be tested may have one or more fiducial flats provided they are located in such a way that the slice can be centered on the

Description: High-speed low-alpha pure tin plating process produces compact grain structures and uniform surface morphology. Product Overview The MICROFAB SN-300/302 process is a high-speed, MSA-based pure tin plating solution. It produces fine-grained, matte to semi-bright pure tin deposits. The

Description: Element range : Al - U Chamber design : closed XY stage options : motorized, wafer Largest sample : 600 x 600 x 20 mm Filters : 5 Polycarpellary optic spot size < 30 µm XRF Controller software

• Applications: Electroplated Films, Semiconductor Wafers
• Maximum Wafer / Part Size: 102 to 305 mm
• Measurement Capability: Composition, Thickness - Film / Layer
• Mounting / Loading: Manual Loading

Description: The Q300R T is a large chamber, rotary-pumped coating system ideally suited for sputtering a single large diameter specimen up to 8"/200mm (eg a wafer), or multiple smaller specimens over a similar diameter. The Q300R T is fitted with three individual sputtering heads to

Description: The Q300T T is a large chamber, turbomolecular-pumpe d coating system ideally suited for sputtering a single large diameter specimen up to 8"/200mm (eg a wafer) or multiple smaller specimens over a similar diameter. The Q300T T is fitted with three individual sputtering

Description: adhesion to various wafer metallizations and leadframe finishes. It can be used in a variety of die sizes ranging from 0.2mm x 0.2mm to 4mm x 4mm. KEY BENEFITS: High MSL reliability Controlled fillet size No resin bleed-out Consistent bondline thickness

• Compound Type: Electrically Conductive
• Electrical / Electronics Applications: Electronics (PCB / SMT Assembly)

Description: Wafer switch with gold break-before-make contacts. The switch mechanism is provided with a 4mm central spindle which can be loaded with up to five wafers. The mechanism may be panel mounted (anti-rotational lug fitted) to a max. panel thickness of 3mm, or secured

• Maximum AC Voltage Rating: 115 volts
• Maximum Current Rating: 0.2000 amps
• Number of Poles: 1 poles
• Terminal Type: Other

Description: Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25Wafer World, Inc. is a privately held company founded by Sean

Description: smallest defects or changes in position. The fiber type sensor heads are as small as 2mm in diameter and generate no heat and are not influenced by electromagnetic noise for maximum flexibility. Common Applications:• Wafer Thickness• Glass Thickness• Surface Mapping•

• Interface: Serial, Parallel
• Measurement Range: 0.0400 to 0.4500 inch
• Operating Temperature: 32 to 104 F
• Output: Voltage, Current, Switched / Alarm

Description: Rubicon’s sapphire epi-polished wafers are ultra-flat, super clean, stress-free large diameter substrates, offered with precision orientations and offsets and wafer-to-wafer uniformity, with one or both surfaces finished. These sapphire wafers are custom designed to meet

• Applications: Dielectric Ceramics / Materials, Electroceramics (Electrical and Electronic Ceramics), Optics / Optical Grade
• Width / O.D.: Up to 7.87 inch

Description: High Pressure Knife Gate Valves This Standard Practice covers the construction requirements for lug- and wafer-type knife gate valves made from ASME Code materials and meeting the applicable gate valve requirements of ASME B16.34. This Standard Practice covers flanged body designs

Description: contacts. Keys to pass (common combination). 3.0mm panel thickness Number of Positions = 4 Contact Configuration = SP Contact Current Rating = 150 mA @ 250 V ac Terminal Type = Solder Case Material = Chrome Plated Zinc Alloy Bezel Shape = Round Depth Behind Panel = 48.7mm Key

• Angle Between Positions: 90 degrees
• Maximum Current Rating: 0.1500 amps
• Number of Poles (Single Deck): 1 poles
• Operating Temperature: 185 F

Description: approximately 15 mm by 25 mm is of an appropriate size although specimens as small as 10 mm by 10 mm are usable. The method is directly applicable to films of silicon dioxide on silicon wafer substrates. The method may be applicable to insulating films on other

Description: -on to the lock from the rear of the panel. 19mm cut out with a maximum panel thickness of 3.4mm. Zinc alloy lock housing with a tapered bezel. 300° total lock travel. 6 positions with 5 indexed positions. Key can be inserted/withdrawn at 60º. Non-shorting (BBM) contacts.

• Maximum Current Rating: 0.1500 amps
• Number of Poles (Single Deck): 1 poles
• Terminal Type: Other

Description: Description Size: 3”~72”(80 mm ~1800mm) Temperature Range: -196?~550? (320?~1022?) Pressure Rating: ANSI 150/300/600/900LB Feature: 1. One-piece shaft and dust-proof seal design. 2. Life cycles may be up to 50,000 cycles with no

• Valve Type: Butterfly Valves, Directional Valves

Description: head Camera with CCD imaging A large objective lens to wafer distance attachment range of 200 mm to 800 mm. The use of lasers enables a spot diameter as small as 20 mm to 100 mm. A compact, self-contained amplifier design that allows simple monitoring of 0 V to 10

Description: SCHOTT D 263® T eco is a clear, lightweight, low fluorescence, borosilicate glass available from Abrisa Technologies in thicknesses from 0.03 mm to 1.1 mm with excellent transmission and high chemical resistance. The glass is made with the SCHOTT specific down-draw method that

• Applications: Chemical / Materials Processing, Electronics / RF-Microwave, Specialty / Other
• Coeff. of Thermal Expansion (CTE): 7.2 µm/m-C
• Dielectric Constant (Relative Permittivity): 6.7 #
• Glass Type: Borosilicate

Description: surfaces. Metallization solutions include: Titanium, Platinum and Gold Titanium, Nickel Gold Chrome, Gold We can offer heat spreaders with the following characteristics: Range of thicknesses available: up to 1mm thick Very flat and

• Device: Passive Heat Sink
• Height: 0.1000 to 0.5000 mm
• Length: 1.5 to 30 mm
• Material: Mixed Material, Other Materials

Description: Smoothness Highest possible mirror Concentricity Up to 0.01mm Parallelism Up to 0.01mm The inner hole tolerance The minimum 0.01mm Straight flute The narrowest 0.1x100mm The thickness of the size Minimum to 0.2mm The screw thread Minimum internal thread M2

• Compressive / Crushing Strength: 377096 psi
• Density: 3.9 g/cc
• Material Type: Alumina / Aluminum Oxide

Description: diamond 1700-1800 W/mK Customized sizes for unique applications: Diamond growth can be on 2, 2.5 and 3? wafers. Free standing diamond can be grown to thicknesses ranging from 80 µm to 1 mm. Specific diameters and geometries can be laser cut to produce custom parts

• Materials: Photonics DIAMOND
• Thickness: 0.1500 to 0.5000 mm
• Wedged or Parallel?: Parallel
• Window Type: Plane Windows