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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 4-Match NPN Trans Ar Hfe 300, 36V/30mA
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT LowNoise Matched NPN Transistor Array
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Low-Noise Matched Transistor Array
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 4-Match NPN Trans Ar Hfe 150, 36V/30mA
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The 2729GN-300V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor. The hermetically sealed 2729GN-300V transistor is designed for S-band pulsed surveillance radar applications and uses all gold transistor metallization to
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with
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Supplier: Microchip Technology, Inc.
Description: exceptionally fast switching speeds. Power MOS V® can still provide the best trade-off between performance and cost in some applications. Power MOS V® utilizes a low resistance aluminum metal gate structure. This allows for faster gate signal propagation than is possible with
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: The 0912GN-300V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 19dB gain, 300 Watts of pulsed RF output power at 128us pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal
- Package Type: Other
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB450S300 is designed for UHF radar systems operating at 450 . While operating in class C mode this common base device supplies a minimum of 300 watts of peak pulse power under the conditions of 30ìs pulse width and 10%
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT = 300W CW @ 36V ¦ 960-1250 Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 237306-BSP300 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min
- Package Type: SOT3, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor, XQFN3
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 50V 1.4GHZ 55ST
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors HV8 300W 50V NI1230S
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: IGBT Transistors / Modules ROHS
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: 45V 200mW 300@1mA,5V 100mA NPN SOT-23 Bipolar (BJT) ROHS
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Supplier: Rochester Electronics
Description: NSS1C300CT - 100 V, 3A, Low VCE(sat) PNP Bipolar Junction Transistor 100V, 3A, PNP Transistor, Automotive
- Package Type: Other
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM500CW300 is designed for VHF/UHF-Band systems operating at 1-500 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-500 . All devices are 100%
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Integra Technologies, Inc.
Description: The high power silicon transistor part number IDM175CW300 is designed for VHF-Band systems operating at 1-200 . Operating at CW conditions, this dual MOSFET device supplies a minimum of 300 watts of power across the instantaneous operating bandwidth of 1-200 . All devices are
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR PNP 300V 0.5A
- Polarity: PNP, Other
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-20-300mil Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions, Inc. Product Type: Transistor Output Optocouplers Output Type: Phototransistor Isolation Voltage: 1500 Vrms Number of Channels: 1 Channel Mounting Style: SMD/SMT Power Dissipation: 50 mW
- Package Type: SOT3
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Description: TRANSISTOR,BIPOLAR,R ADAR,300W,1.
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92 Features and benefits High voltage (max. 300 V) AEC-Q101 qualified Applications Telephony and professional communication equipment
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET HEMT 50V 55-QP
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: TRANSISTOR MODULE IGBT 300AMP. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
(VCEO): 40V Collector-Base Voltage (VCBO): 60V Emitter-Base Voltage (VEBO): 6V Continuous Collector Current (IC): 200mA DC Current Gain (hFE): 100 to 300 Collector (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo