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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3072 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 45 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3399 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 100 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Large-area Si PIN photodiode for direct radiation detection The S13993 is an unsealed type large area Si PIN photodiode for direct radiation detection. Since the photosensitive area is coated with Al, there is no sensitivity in the ultraviolet to near infrared region.
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Dark Current: 6 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Description: SENSOR PHOTODIODE PIN
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode 76ns TO-39-3 Lens Top Metal Can
- Active Area Diameter or Length: 2 mm
- Dark Current: 160000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode TO-46-3 Lens Top Metal Can
- Active Area Diameter or Length: 1.5 mm
- Dark Current: 2000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode 102ns TO-39-3 Lens Top Metal Can
- Active Area Diameter or Length: 3 mm
- Dark Current: 265000 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode 1550nm TO-206AA, TO-18-3 Metal Can
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Sensitivity: 0.9500 A/W
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, flat and lensed side lookers as well as a surface
- Active Area Diameter or Length: 0.4000 mm
- Active Area Height: 0.4000 mm
- Dark Current: 2 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' family of large active area and high speed silicon detector series are designed to reliably support short-haul data communications applications. All exhibit low dark current and low capacitance at 3.3V bias. The base unit comes in a 3 pin TO-46 package with
- Active Area Diameter or Length: 0.1270 mm
- Dark Current: 0.0200 nA
- Noise Equivalent Power (NEP): 5.95E-15 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: OSRAM Opto Semiconductors
Description: PIN Photodiode in 3 mm (T1) Plastic Package, Radiant Sensitive Area 0.56 x 0.56 mm², Half Angle ±17 °
- Active Area Diameter or Length: 0.5600 mm
- Active Area Height: 0.5600 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Leaded
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Supplier: OSRAM Opto Semiconductors
Description: PIN Photodiode in 3 mm (T1) Plastic Package, Radiant Sensitive Area 0.56 x 0.56 mm², Half Angle ±17 °
- Active Area Diameter or Length: 0.5600 mm
- Active Area Height: 0.5600 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Leaded
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Photodiode Plastic Si PIN
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Supplier: OSI Optoelectronics
Description: with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics"
- Active Area Diameter or Length: 10 mm
- Active Area Height: 20 mm
- Noise Equivalent Power (NEP): 2.90E-13 W/Hz½
- Operating Temperature: -10 to 60 C
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Supplier: OSI Optoelectronics
Description: with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics"
- Active Area Diameter or Length: 2.54 mm
- Noise Equivalent Power (NEP): 5.20E-14 W/Hz½
- Operating Temperature: -10 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes PIN Photodiode
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Supplier: IDEA, Inc.
Description: Lead (Pb) free, water clear lens
- Active Area Diameter or Length: 3 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1234978-SFH 3410R Category: Sensors, Transducers>Optical Sensors - Photodiodes Series: Power TOPLED® Package: Tape & Reel (TR) Standard Package: 2,000 Mounting: SMD (SMT) Diode Type: PIN Viewing Angle: 120° Wavelength: 570
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Supplier: Light in Motion LLC
Description: Features Daylight Filter; BPW34FS Clear Lens; BPW34CS Chip Size 3mm square Sensitive area 2.55 mm square High Sensitivity Low Capacitance Reception Angle 120 degrees Surface Mount Package options: Suffix GR : Gullwing ( overmount PCB ) Suffix ZR : Z bend ( undermount PCB )
- Output Type: Current Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 730 to 1100 nm
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Supplier: TE Connectivity
Description: Application : Photometry, Fluorescence Detection, Analytical Instruments, Medical Equipment, Spectroscopy Product Type Features Optical Detector Type : Pin Photodiode Optical Sensor Product Type : Detector
- Operating Temperature: -40 to 414 F
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options
- Active Area Diameter or Length: 1 mm
- Dark Current: 1 to 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: RS Components, Ltd.
Description: PIN Photodiode 350-1120nm 20deg 3mm - Optocouplers, Photodetectors & Photointerrupters - Photodiodes
- Photodiode Material: Silicon
- Spectral Response: IR
- Spectral Response Range: 350 to 1120 nm
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Supplier: Win Source Electronics
Description: Manufacturer: OSRAM Opto Semiconductors Inc. Win Source Part Number: 70197-KOM2125 Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 60V Viewing Angle: 120° Wavelength: 850nm Spectral Range: 400nm to 1100nm Current
- Operating Temperature: -40 to 80 C
- Package Type / Mounting: Surface Mount (SMD)
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Supplier: Electro Optical Components, Inc.
Description: to 3 mm dia. Very low noise, NEP down to 88 fW/vHz Switchable low pass filters for minimizing wideband noise Fiber optic and free space input 1.035?-40 threaded free space input compatible with many optical standard accessories
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 400 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Broadcom Inc.
Description: These diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred times that of a
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: 0.0 to 70 C
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Supplier: Win Source Electronics
Description: Manufacturer: Everlight Electronics Co Ltd Win Source Part Number: 800608-PD95-21B/TR10 Packaging: Reel Mounting Style: SMD Response Time: 6ns Diode Type: PIN Wavelength: 940nm Spectral Range: 730nm ~ 1100nm Current - Dark (Typ): 10nA Temperature Range
- Diode Type: Other
- Tj: -25 to 85 C
- VR: 32 volts
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Supplier: California Eastern Laboratories - CEL
Description: 8pin DIP SMT, Single Tr, DC, 1Mbps, High CMMR, wide creepage
- Collector Emitter Breakdown Voltage: 35 volts
- Isolation Voltage: 5000 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 100 C
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Supplier: Rochester Electronics
Description: QSE773 - PIN Photodiode
- RoHS Compliant: Yes
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Supplier: Broadcom Inc.
Description: Avago’s RPIC-10410 ROSA is a 4x10Gb/s, 1310nm CWDM receive optical subassembly, containing an optical de-multiplexer, to separate the four incoming CWDM wavelengths, four high reliability, high performance PIN photodiodes, and a quad transimpedance amplifier (TIA). The ROSA includes
- Connector Type: LC
- Data Rate: 10312 Mbps
- Photodiode Type: PIN
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Supplier: Microwave Photonic Systems, Inc.
Description: a wide array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission.The receiver utilizes a high speed, low distortion PIN photodiode detector that
- Bandwidth: 3000 MHz
- Connector Type: FC, SC, Other
- Operating Temperature: -40 to 185 F
- Photodiode Type: PIN
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Supplier: Newport MKS
Description: The 818-BB-51 High Speed InGaAs Detector is built from a free-space extended InGaAs photodiode with a 40 um active diameter and a fast <28 ps rise time. With the wavelength range of 830 - 2150 nm, it allows monitoring Thulium (Tm) and Holmium (Ho) doped lasers as well as other NIR lasers. It
- Bandwidth: 0.0 to 12500 MHz
- Connector Type: Other
- Photodiode Type: PIN
- Receiver Rise Time: 0.0280 ns
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics Europe -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
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Optical response time of InGaAs(P)/InP photodiodes
As it is clear from the Fig. 3 PIN photodiode L 14 has extremely low capacity (lower than 2 pF at operating voltage 5 V) what results in very high speed of response.
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Ga1-yInyAs/InAsxP1-1 ( y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2 μm) grown by hydride vapour phase epitaxy
Fig. 1 Photographic cross-section view of a lattice-mismatched Gal _,ln,As/lnAs,P, ~x ( y = 0.72,x = 0 4 3 3 ) pin photodiode .
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Expectations for direct photon physics from Fermilab experiment E705
The LED light source is temperature controlled by the same system used for the calorimeter and is monitored by 3 PIN photodiodes attached to 3 of the optical fibers.
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Comprehensive Study of Neon HXR and SXR Emitted from APF Plasma Focus Device
Fig. 3 PIN photodiodes a Biasing circuit b Experimental array .
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Characterization of the Soft X-Ray Emission from the APF Plasma Focus Device Operated in Neon
Fig. 3 PIN photodiodes a Biasing circuit b Experimental array .
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Parasitic-compensated switched-capacitor delay lines
Fig. 1 Photographic cross-section view of a lattice-mismatched Gal _,ln,As/lnAs,P, ~x ( y = 0.72,x = 0 4 3 3 ) pin photodiode .
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Page 13. Semiconductor parts with 170 in root number
InGaAs PIN PHOTODIODE 3 mm InGaAs PIN Photdiode with TO-5 Package .
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Microfluidic devices and true‐color sensor as platform for glucose oxidase and laccase assays
The true-color sensor is an integrated sensor device made of 19Â 3 photodiodes ( pin -structure) arranged as a hexagonal matrix with a diameter of 2 mm (Fig. 2).
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Handbook of Single-Molecule Biophysics
The photosensor consists of a four-segment Si PIN photodiode ( 3 pF, 40 MHz) and a custom-made fast amplifier/signal conditioner (∼20 MHz).
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High-speed AFM and nano-visualization of biomolecular processes
The photosensor consists of a four-segmented Si PIN photodiode ( 3 pF, 40 MHz) and a custom-made fast amplifier/signal conditioner (~20 MHz).