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Supplier: OSRAM Opto Semiconductors
Description: PIN Photodiode in 3 mm (T1) Plastic Package, Radiant Sensitive Area 0.56 x 0.56 mm², Half Angle ±17 °
- Spectral Response Range: 380 to 1,100 nm
- Active Area Diameter or Length: 0.56 mm
- Active Area Height: 0.56 mm
- Photodiode Spectral Response: IR
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, flat and lensed side lookers as well as a surface
- Sensitivity: 0.4 A/W
- Spectral Response Range: 700 to 1,100 nm
- Active Area Diameter or Length: 0.4000000000000001 mm
- Active Area Height: 0.4000000000000001 mm
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Supplier: Light in Motion LLC
Description: Features Daylight Filter; BPW34FS Clear Lens; BPW34CS Chip Size 3mm square Sensitive area 2.55 mm square High Sensitivity Low Capacitance Reception Angle 120 degrees Surface Mount Package options: Suffix GR : Gullwing ( overmount PCB ) Suffix ZR : Z bend ( undermount PCB )
- Spectral Response: 400 to 1,100 nm
- Output Type: Current Output
- Module Type: PIN Photodiode
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Supplier: RS Components, Ltd.
Description: PIN Photodiode 350-1120nm 20deg 3mm
- Spectral Response Range: 350 to 1,120 nm
- Photodiode Spectral Response: IR
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section
- Sensitivity: 0.5 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 11.280000000000001 mm
- Rise Time: 2,000 ns
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Description: SENSOR PHOTODIODE PIN
- Photodiode Type: PIN Photodiode
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Supplier: DigiKey
Description: Photodiode 850nm 45µs 80° Radial
- Spectral Response Range: 400 to 1,100 nm
- Rise Time: 45,000 ns
- Operating Temperature: -40 to 80 C
- Dark Current: 5 nA
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3072 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 45 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Sensitivity: 0.54 A/W
- Spectral Response Range: 320 to 1,060 nm
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
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Supplier: OSI Optoelectronics
Description: The Detector-Filter combination series incorporates a filter with a photodiode to achieve a tailored spectral response. OSI Optoelectronics offers a multitude of standard and custom combinations. Upon request, all detector-filter combinations can be provided with a NIST traceable calibration
- Spectral Response Range: 450 to 700 nm
- Active Area Diameter or Length: 2.5000000000000004 mm
- Active Area Height: 1.2000000000000002 mm
- Operating Temperature: -25 to 85 C
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes Photodiode Plastic Si PIN
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Supplier: OSI Optoelectronics
Description: circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to "Photodiode Characteristics" section of the catalog. Product Applications Pulse Detectors Optical Communications Bar
- Sensitivity: 0.65 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 0.6000000000000001 mm
- Active Area Height: 4.6 mm
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Supplier: Newark, An Avnet Company
Description: PIN PHOTODIODE, 950NM, 20DEG, T1; No. of Pins:2Pins; Diode Case Style:T-1 (3mm); Wavelength of Peak Sensitivity:950nm; Angle of Half Sensitivity ±:20°; Dark Current:150pA; Operating Temperature Min:-40°C; Product Range:-; MSL:- RoHS Compliant: Yes
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for
- Sensitivity: 35 to 50 A/W
- Spectral Response Range: 400 to 1,100 nm
- Active Area Diameter or Length: 0.04 mm
- Active Area Height: 230 mm
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Supplier: IDEA, Inc.
Description: No Description Provided
- Active Area Diameter or Length: 3 mm
- Rise Time: 10 ns
- Photodiode Spectral Response: IR
- Features: Other
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Supplier: Newark, An Avnet Company
Description: PHOTODIODE, EYE RESPONSE; No. of Pins:3Pins; Diode Case Style:Metal Can; Wavelength of Peak Sensitivity:630nm; Angle of Half Sensitivity ±:-; Dark Current:0.02µA; Operating Temperature Min:-25°C; Operating Temperature Max:75°C; MSL:-RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: onsemi Win Source Part Number: 1336637-QSE773E3R0 Category: Sensors, Transducers>Optical Sensors - Photodiodes Packaging: Reel - TR Response Time: 50ns Standard Package: 1,000 Mounting: Through Hole, Right Angle Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 32 V
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Supplier: TE Connectivity
Description: Dimensions Active Area Width : 3.5 MM [.14 INCH ] Total Active Area : 13 MMSQ [.02 INCHSQ ] Operation/Application Optical Sensor Application : Photometry, Fluorescence Detection, Analytical Instruments, Medical Equipment, Spectroscopy Product Type Features Optical Detector Type : Pin
- Operating Temperature: -40 to 413.6 F
- Features: Photoelectric Sensors
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Supplier: Newark, An Avnet Company
Description: PHOTODIODE, SIC UV, A=1.0MM2, TO18; No. of Pins:2Pins; Diode Case Style:TO-18; Wavelength of Peak Sensitivity:300nm; Angle of Half Sensitivity ±:-; Dark Current:3.4fA; Operating Temperature Min:-55°C; Operating Temperature Max:170°C;RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: OPTOCOUPLER, PHOTODIODE, 3-CH, 5KV; No. of Channels:1 Channel; Optocoupler Case Style:Surface Mount DIP; No. of Pins:8Pins; Isolation Voltage:5kV; Product Range:-; SVHC:No SVHC (12-Jan-2017); Input Current:20mA; No. of RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: OSRAM Opto Semiconductors Inc. Win Source Part Number: 70197-KOM2125 Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 60V Viewing Angle: 120° Wavelength: 850nm Spectral Range: 400nm to 1100nm Current - Dark (Typ): 5nA Active Area: 4mm2,
- Operating Temperature: -40 to 80 C
- Package / Mounting: Surface Mount (SMD)
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Semiconductor Opto Division Win Source Part Number: 801852-TEMD1020 Packaging: Reel Mounting Style: SMD Response Time: 4ns Diode Type: PIN Viewing Angle: 30° Wavelength: 940nm Spectral Range: 790nm ~ 1050nm Current - Dark (Typ): 1nA Active Area: 0.23mm² Temperature Range
- Operating Temperature: -40 to 85 C
- Package / Mounting: Surface Mount (SMD)
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Supplier: Win Source Electronics
Description: Manufacturer: Everlight Electronics Co Ltd Win Source Part Number: 1236534-PD333-3B/H0/L2 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -40°C ~ 85°C Package: Radial Response Time: 45ns Diode Type: PIN Viewing Angle: 80° Wavelength: 940nm Spectral Range: 840nm ~
- Operating Temperature: -40 to 85 C
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Supplier: Allied Electronics, Inc.
Description: PHOTOTRANSISTOR IR CHIP SILICON 930NM 2-PIN T-1 3/4
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Supplier: Allied Electronics, Inc.
Description: AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 3-PIN SMD T/R
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Supplier: Allied Electronics, Inc.
Description: AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4
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Supplier: Rochester Electronics
Description: QSE773 - PIN Photodiode
- RoHS Compliant: RoHS Compliant
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options
- Spectral Response Range: 900 to 1,700 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 15 ns
- Dark Current: 1 to 10 nA
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Supplier: Broadcom Inc.
Description: conventional phototransistor coupler by reducing the base-collector capacitance. These optocouplers are available in an 8-pin DIP and in an industry standard SO-8 package. The following is a cross reference table listing the 8-pin DIP part number and the electrically equivalent SO-8
- Isolation Voltage: 3,750 volts
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: 0 to 70 C
- Input: DC
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Supplier: Electro Optical Components, Inc.
Description: Adjustable transimpedance gain from 102 to 108V/A Wide bandwidth up to 200 MHz Various Si and InGaAs models cover the 320 to 1,700 nm wavelength range High dynamic input range up to 10 mW optical power Large optical detector size up to 3 mm dia. Very low noise, NEP down to 88 fW/√Hz
- Spectral Response: 400 to 1,700 nm
- Supply Voltage: 15 volts
- Module Type: PIN Photodiode
- Output Type: Voltage Output
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Supplier: California Eastern Laboratories - CEL
Description: 8-Pin DIP High Speed Photocoupler For Creepage Distance of 8 mm
- Isolation Voltage: 5,000 volts
- Rise Time: 0.02 µs
- Collector Emitter Breakdown Voltage: 7 volts
- Operating Temperature: -40 to 85 C
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Supplier: Broadcom Inc.
Description: Available in either an 8-pin DIP or SO-8 package style respectively, the ACPL-772L or ACPL-072L optocouplers utilize the latest CMOS IC technology to achieve an outstanding 25MBd minimum data rate and 6ns maximum pulse width distortion. Basic building blocks of this family of products are a
- Isolation Voltage: 3,750 volts
- Rise Time: 0.009 µs
- Operating Temperature: -40 to 105 C
- Input: AC, DC
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Supplier: Microwave Photonic Systems, Inc.
Description: communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission. The receiver utilizes a high speed, low distortion PIN photodiode detector that is integrated
- Responsivity: 0.85 to 0.9 A/W
- Operating Temperature: -40 to 185 F
- Connector Type: FC, SC
- Features: Other
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
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Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
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Optical response time of InGaAs(P)/InP photodiodes
As it is clear from the Fig. 3 PIN photodiode L 14 has extremely low capacity (lower than 2 pF at operating voltage 5 V) what results in very high speed of response.
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Ga1-yInyAs/InAsxP1-1 ( y>0.53, x>0) pin photodiodes for long wavelength regions (λ>2 μm) grown by hydride vapour phase epitaxy
Fig. 1 Photographic cross-section view of a lattice-mismatched Gal _,ln,As/lnAs,P, ~x ( y = 0.72,x = 0 4 3 3 ) pin photodiode .
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Expectations for direct photon physics from Fermilab experiment E705
The LED light source is temperature controlled by the same system used for the calorimeter and is monitored by 3 PIN photodiodes attached to 3 of the optical fibers.
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Comprehensive Study of Neon HXR and SXR Emitted from APF Plasma Focus Device
Fig. 3 PIN photodiodes a Biasing circuit b Experimental array .
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Characterization of the Soft X-Ray Emission from the APF Plasma Focus Device Operated in Neon
Fig. 3 PIN photodiodes a Biasing circuit b Experimental array .
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Parasitic-compensated switched-capacitor delay lines
Fig. 1 Photographic cross-section view of a lattice-mismatched Gal _,ln,As/lnAs,P, ~x ( y = 0.72,x = 0 4 3 3 ) pin photodiode .
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Page 13. Semiconductor parts with 170 in root number
InGaAs PIN PHOTODIODE 3 mm InGaAs PIN Photdiode with TO-5 Package .
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Microfluidic devices and true‐color sensor as platform for glucose oxidase and laccase assays
The true-color sensor is an integrated sensor device made of 19Â 3 photodiodes ( pin -structure) arranged as a hexagonal matrix with a diameter of 2 mm (Fig. 2).
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Handbook of Single-Molecule Biophysics
The photosensor consists of a four-segment Si PIN photodiode ( 3 pF, 40 MHz) and a custom-made fast amplifier/signal conditioner (∼20 MHz).
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High-speed AFM and nano-visualization of biomolecular processes
The photosensor consists of a four-segmented Si PIN photodiode ( 3 pF, 40 MHz) and a custom-made fast amplifier/signal conditioner (~20 MHz).