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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- IC(max): 3,000 milliamps
- VCEO: 60 volts
- fT: 75 MHz
- PD: 2 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing
- IC(max): 3,000 milliamps
- VCEO: 15 volts
- VCBO: 20 volts
- PD: 1,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 120V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 120 volts
- TJ: -55 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing
- VCEO: 40 volts
- TJ: -55 to 200 C
- Features: Bipolar RF Transistors, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185649-IMT3A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 100V, 3A, TO-252-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 30V, 3A, SOT-32-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 3A, TO-126-3; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:3A; Power Dissipation:12.5W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1174747-FMG3A Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 100V, 3A/TO252; Transistor Polarity:NPN; Collector Emitter Voltage Max:100V; Continuous Collector Current:3A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
- Features: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SA2071P5 is a power transistor for high speed switching.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044189-HUF75344A3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 288.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 55 volts
- PD: 288,500 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: ODG (Origin Data Global)
Description: 20V 3A 1W 110mΩ@4.5V,3A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
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Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: Taiwan Semiconductor Corporation Win Source Part Number: 800865-TSC966CT A3G Packaging: Tape & Box (TB) Mounting Style: Through Hole Power - Max: 1W Transistor Type: NPN Frequency - Transition: 50MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-92 Temperature
- TJ: 150 C
- Power Gain: 100 dB
- Output Power: 1 watts
- Operating Frequency: 50 MHz
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR NPN 100V 3A, DPAK
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR573D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR573D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR587D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 250V 200W 50@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
- IC(max): 15,000 milliamps
- VCEO: 250 volts
- PD: 200,000 milliwatts
- hfe: 50
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 20A, TO-3 PKG
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR DARLINGTON NPN 100V 20A, TO-3 PKG
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Supplier: ODG (Origin Data Global)
Description: RF SMALL SIGNAL TRANSISTOR
- IC(max): 35 milliamps
- VCEO: 4.3 volts
- Power Gain: 7.5 dB
- Noise Figure: 0.6 dB
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers RECOMMENDED ALT 78-VO618A-3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN, 60V 16A 140V, TO-3 PKG
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Supplier: Infineon Technologies AG
Description: PNP Silicon Switching Transistor Summary of Features Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 150 to 600 milliamps
- VCEO: 60 volts
- VCBO: 60 volts
- fT: 200 MHz
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: -60 volts
- IC(max): -3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011 BC847BL3 is not qualified according AEC Q101
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP 50V 5A 3-PIN
- VCEO: 70 volts
- IC(max): -5,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 60 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: 100 volts
- IC(max): 3 milliamps
- PD: 1.25 milliwatts
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential Applications For AF input stages
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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