-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
-
-
-
-
-
Supplier: ODG (Origin Data Global)
Description: RF BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT SS Transistor
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Transistor PNP
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Silicon Planar Med Power Transistor
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 250V 200W 50@3A,5V 15A PNP TO-3PN Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 250V 200W 50@1A,5V 15A NPN TO-3PN Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 700V 125W 60@100mA,5V 8A NPN TO-3PN Bipolar Transistors - BJT ROHS
- Package Type: TO-3
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-363 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
-
Supplier: ODG (Origin Data Global)
Description: RF SMALL SIGNAL TRANSISTOR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 906378-2SC945A-A Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status:
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
-
Supplier: Toshiba America, Inc.
Description: Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors Bipolar Transistors Bias Resistor Built-in Transistors (BRT) IGBTs IEGT (PPI & PMI) Multi-Chip Discrete
- Transistor Type: General Purpose BJT, Bipolar RF Transistors, IGBT
-
Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
- Package Type: Other
- Transistor Type: Power BJT Transistors
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
- Package Type: TO-3
-
Supplier: Rochester Electronics
Description: Transistor
- Package Type: TO-3, TO-39, Other
-
Description: TRANSISTOR
- Transistor Type: MOSFET
-
Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 400V 10A 10MHz 100W Chassis Mount TO-3
- Package Type: TO-3, Other
- Polarity: NPN
-
Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PN P) Pb-free (RoHS compliant) package
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small
- Package Type: TO-3, TO-39, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Transistor Type: Power BJT Transistors
-
Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base device supplies a minimum of 250 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 500 to 1000 MHz
- Output Power: 5 watts
- Package Type: Other
- Power Gain: 10 dB
-
Supplier: Acme Chip Technology Co., Limited
Description: NPN TRANSISTOR
- Transistor Type: General Purpose BJT
-
Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
-
Description: TRANSISTOR
- Packing Method: Bulk Pack, Other
-
Supplier: ROHM Semiconductor GmbH
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
-
Supplier: ROHM Semiconductor USA, LLC
Description: PNP -3.0A -30V Middle Power Transistor
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
- Transistor Type: General Purpose BJT
-
Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors BL RF
- Output Power: 350 watts
- Packing Method: Tape Reel, Other
- Power Gain: 19.2 dB
- Transistor Type: MOSFET RF Transistors
Find Suppliers by Category Top
Featured Products Top
-
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
continuous drain current of 320mA, it provides reliable performance in diverse environments. The BSS138PW,115 is available in a SOT-323-3 package, making it suitable for SMD (SMT) mounting. Key Features: Type: N-Channel MOSFET (read more)
Browse Transistors Datasheets for Win Source Electronics -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The SMMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a testament to ON Semiconductor's commitment to providing reliable and efficient electronic (read more)
Browse Thermistors Datasheets for Win Source Electronics