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Supplier: Cypress Semiconductor Corp.
Description: are offered in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages. Cypress nvSRAM Key Features 64Kb to 16Mb devices Asynchronous parallel and ONFI 1.0 interface options Serial interface options
- Density: 64 to 16000 kbits
- IC Package Type: SOIC, TSOP, SSOP, Other
- Memory Category: NVRAM, NVSRAM
- Supply Voltage: 1.8 V, 3 V, 5 V
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Supplier: Cypress Semiconductor Corp.
Description: Transaction Rate (RTR up to 2132 MT/s), FIT rates (less than 0.01-FIT/Mb) and innovative new features such as on-chip Error Correction Code (ECC). Cypress Sync SRAM products are suitable for systems running mission critical applications such as switches and routers, RADAR and
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Supplier: Cypress Semiconductor Corp.
Description: Ultra-Reliable Asynchronous SRAMs Click to Enlarge With the performance to serve a wide variety of high reliability industrial, communication, data processing, medical, consumer and military applications, Fast and Micropower (MoBL®) SRAM devices are available with on-chip ECC
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Supplier: Cypress Semiconductor Corp.
Description: Transaction Rate (RTR up to 2132 MT/s), FIT rates (less than 0.01-FIT/Mb) and innovative new features such as on-chip Error Correction Code (ECC). Cypress Sync SRAM products are suitable for systems running mission critical applications such as switches and routers, RADAR and
- Density: 72 to 144 kbits
- IC Package Type: Other
- Memory Category: SRAM
- Supply Voltage: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 957347-MB84256C-70LL PF Series: * Categories: Memory
- Memory Category: SRAM
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Supplier: GSI Technology
Description: . œQuad� refers to their ability to transfer 4 beats of data (2 beats per data bus) in a single clock cycle. SigmaQuad memories are ideal for applications that alternate between read and write operations frequently, at operating speeds of 250 MHz and above. GSI™s SigmaQuad devices are
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Supplier: Utmel Electronic Limited
Description: SRAM 4Mb 3V 45ns 256K x 16 LP SRAM
- Cycle Time: 45 ns
- Density: 32000 kbits
- IC Package Type: Other
- Memory Category: SRAM, Other
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Supplier: Texas Instruments
Description: 16MB Radiation-Hardened SRAM 76-CFP -55 to 125
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Supplier: Texas Instruments
Description: 16MB Radiation-Hardened SRAM 76-CFP 25 Only
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Supplier: Microchip Technology, Inc.
Description: controlled through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and
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Supplier: GSI Technology
Description: GSI offers the broadest portfolio of Synchronous Burst (SyncBurst„¢) SRAMs in the industry. Our SyncBurst SRAMs provide the fastest clock rates and lowest power of any in the world. SyncBurst SRAMs provide a œburst� of (typically) 2 to 4 words in response to a
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- IC Package Type: Other
- Memory Category: SRAM
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-28-8.4mm SRAM ROHS
- IC Package Type: SOIC
- Memory Category: SRAM
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Supplier: Win Source Electronics
Description: Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 916229-CY14MB064Q2A- SXQ Operating Temperature Range: -40°C ~ 105°C (TA) Features: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) SPI 8-SOIC Package: 8-SOIC (0.154", 3.90mm Width) Package
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Supplier: Win Source Electronics
Description: Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 916230-CY14MB064Q2B- SXI Operating Temperature Range: -40°C ~ 85°C (TA) Features: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) SPI 40 MHz 8-SOIC Package: Tube Package: 8-SOIC (0.154", 3
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Supplier: Utmel Electronic Limited
Description: CYPRESS SEMICONDUCTOR - CY62146EV30LL-45ZSXI - SRAM, 4MB, 256KX16, 3V, TSOPII-44
- Access Time: 45 ns
- Cycle Time: 45 ns
- Density: 32000 kbits
- IC Package Type: Other
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- IC Package Type: Other
- Memory Category: SRAM
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- IC Package Type: Other
- Memory Category: SRAM
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- IC Package Type: Other
- Memory Category: SRAM
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 2.4V~3.6V 4Mbit TSOPII-44 SRAM ROHS
- Density: 4000 kbits
- IC Package Type: TSOP
- Memory Category: SRAM
- Operating Temperature: -40 to 85 C
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Supplier: Microchip Technology, Inc.
Description: The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device
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Supplier: Microchip Technology, Inc.
Description: The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 4.5V~5.5V 256Kbit SOJ-28 SRAM ROHS
- Density: 256 kbits
- IC Package Type: SOJ
- Memory Category: SRAM
- Operating Temperature: -40 to 85 C
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Supplier: Win Source Electronics
Description: Win Source Part Number: 957581-RMLV0816BGBG- 4S2#AC0 Series: * Categories: Memory
- Memory Category: SRAM
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Supplier: Utmel Electronic Limited
Description: IC SRAM 4M PARALLEL 48VFBGA
- Access Time: 45 ns
- Cycle Time: 45 ns
- Density: 32000 kbits
- IC Package Type: Other
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Supplier: Utmel Electronic Limited
Description: IC SRAM 4M PARALLEL 44SOJ
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Supplier: Accuris
Description: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 32-BIT (64Mb), RADIATIONHARDENED, SRAM, MULTI-CHIP MODULE
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Supplier: Infineon Technologies AG
Description: Applications Human machine interface Industrial robots system solutions for Industry 4.0 Servo motor drive and control
- Density: 16000 kbits
- IC Package Type: Other
- Memory Category: SRAM
- Operating Temperature: -40 to 85 C
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Supplier: Infineon Technologies AG
Description: Applications Connected and smart lighting for IoT Wired Communication Designers who used this product also designed with CY8C4124LQI-443T PSOC™ 4 Arm® Cortex®-M0/M0+ IRLML2060 | N-Channel Power MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: SRAM 16Mb MoBL SRAM With ECC
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Supplier: Infineon Technologies AG
Description: Applications Digital input/output (I/O) modules Industrial automation Industrial robots system solutions for Industry 4.0 Programmable logic controller (PLC)
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Supplier: Infineon Technologies AG
Description: Applications Human machine interface Industrial robots system solutions for Industry 4.0 Servo motor drive and control Designers who used this product also designed with BSC014N04LSI | N-Channel Power MOSFET FM22L16
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A 4-Mbit Non-Volatile Chalcogenide Random Access Memory
In addition, typical yield was achieved for the CMOS 4Mb SRAM chips that were processed along with the 64kb arrays.
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SRAM design on 65nm CMOS technology with integrated leakage reduction scheme
Summary A 4Mb SRAM chip has been fabricated on a high- performance 65nm CMOS technology, shown in Fig 8.
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Correlation of neutron dosimetry using a silicon equivalent proportional counter microdosimeter and SRAM SEU cross sections for eight neutron energy spectra
Also used in these experiments was a de- vice under test (DUT) board containing a 4 Mb SRAM chip , and a remote computer that monitored the SEU rate induced by the incident neutrons.
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Weighted round-robin cell multiplexing in a general-purpose ATM switch chip
For ex- ample, a 4 Mb SRAM chip with a 7 ns access time has already been demonstrated [161 and if the technology and capacity of this chip were available to us, the memories in our chip could be three to four …
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A 500 MHz 4 Mb CMOS pipeline-burst cache SRAM with point-to-point noise reduction coding I/O
Figure 6: 4Mb SRAM chip micrograph.
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A 200 MHz RISC microprocessor with 128 kB on-chip caches
Figure 6: 4Mb SRAM chip micrograph.
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Multi-layer interconnect yield model for mega bit BiCMOS SRAMs
A complex 4 - Mb SRAM chip offers no flexibility in SRAM cells and associated circuits.
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A distributed globally replaceable redundancy scheme for sub-half-micron ULSI memories and beyond
The number of redundant lines used in 4 Mb SRAM pass chips .
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A 23-ns 4-Mb CMOS SRAM with 0.2-μA standby current
4 - Mb SRAM chip .
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A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM
4 - Mb SRAM chip photomicrograph.