-
Supplier: Utmel Electronic Limited
Description: SRAM 4Mb 3V 45ns 256K x 16 LP SRAM
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 957347-MB84256C-70LLPF Series: * Categories: Memory
-
Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1154330-BQ4014MB-120 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 32-DIP Module (0.61", 15.49mm) Technology: NVSRAM (Non-Volatile SRAM) Operating Supply Voltage: 4.75 V ~ 5.5 V Memory
- Access Time: 120 ns
- Cycle Time: 120 ns
- Operating Temperature: 0 to 70 C
- Package Type: DIP
-
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
-
Supplier: Newark, An Avnet Company
Description: SRAM, 4MB, 512KX8, 3-5V, 32TSOPII; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:2.7V to 5.5V; Memory Case Style:TSOP-II; No. of Pins:32Pins; Access Time:55ns; Operating Temperature Min:-40°C; RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: SRAM, 1MB, 25NS, TSSOP-8; Memory Size:1MB; SRAM Memory Configuration:128K x 8bit; Supply Voltage Range:2.5V to 5.5V; Memory Case Style:TSSOP; No. of Pins:8Pins; Access Time:25ns; Operating Temperature Min:-40°C; Product Range:- RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: SERIAL SRAM, 1MB, SPI, TSSOP-8; Memory Size:1MB; SRAM Memory Configuration:128K x 8bit; Supply Voltage Range:2.5V to 5.5V; Memory Case Style:TSSOP; No. of Pins:8Pins; Access Time:-; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: SRAM, 4MB, 5V, 12NS, 512KX8, SOJ36; Memory Size:4Mbit; SRAM Memory Configuration:512K x 8bit; Supply Voltage Range:4.5V to 5.5V; Memory Case Style:SOJ; No. of Pins:36Pins; Access Time:12ns; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
-
Supplier: Texas Instruments
Description: 16MB Radiation-Hardened SRAM 76-CFP -55 to 125
-
Supplier: RS Components, Ltd.
Description: 71V416 4Mb Asynchronous 256K x 16 SRAM
-
Supplier: Microchip Technology, Inc.
Description: through a Chip Select (CS) input. Additionally, SDI (Serial Dual Interface) is supported if your application needs faster data rates. The SRAM can be battery backed via the Vbat pin essentially making the SRAM non-volatile. The device also supports unlimited read and write
-
Supplier: Accuris
Description: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 32-BIT (64Mb), RADIATIONHARDENED, SRAM, MULTI-CHIP MODULE
-
Supplier: Win Source Electronics
Description: Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 916229-CY14MB064Q2A-SXQ Operating Temperature Range: -40°C ~ 105°C (TA) Features: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) SPI 8-SOIC Package: 8-SOIC (0.154", 3.90mm Width) Package: Tube Mounting: Surface Mount Family
-
Supplier: Win Source Electronics
Description: Manufacturer: Cypress Semiconductor Corp Win Source Part Number: 916230-CY14MB064Q2B-SXI Operating Temperature Range: -40°C ~ 85°C (TA) Features: NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) SPI 40 MHz 8-SOIC Package: Tube Package: 8-SOIC (0.154", 3.90mm Width) Mounting: Surface Mount
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
-
Supplier: Microchip Technology, Inc.
Description: The Microchip Technology Inc. 23A1024/23LC1024 are 1 Mbit Serial SRAM devices. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device
-
Supplier: Accuris
Description: MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2M X 32-BIT (64Mb), RADIATION-HARDENED, SRAM, MULTI-CHIP MODULE
-
Supplier: Utmel Electronic Limited
Description: CYPRESS SEMICONDUCTOR - CY62146EV30LL-45ZSXI - SRAM, 4MB, 256KX16, 3V, TSOPII-44
-
Supplier: GSI Technology
Description: GSI's SigmaQuad„¢ SRAMs are the acknowledged leader in the industry with their combination of capacity and performance. SigmaQuad transaction rates are unequaled by any competitors. SigmaQuad SRAMs are synchronous memories with separate read and write data buses. œQuad refers to their
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
-
Supplier: Cypress Semiconductor Corp.
Description: Cypress is the Synchronous (Sync) SRAM market leader with more than 2.7 billion cumulative units shipped, with lead times of six weeks or less, 99% or higher on-time delivery and legacy product support for up to 20 years. Cypress is the preferred SRAM supplier to customers in several
-
Supplier: Cypress Semiconductor Corp.
Description: Ultra-Reliable Asynchronous SRAMs Click to Enlarge With the performance to serve a wide variety of high reliability industrial, communication, data processing, medical, consumer and military applications, Fast and Micropower (MoBL®) SRAM devices are available with on-chip ECC.
-
Supplier: GSI Technology
Description: GSI offers the broadest portfolio of Synchronous Burst (SyncBurst„¢) SRAMs in the industry. Our SyncBurst SRAMs provide the fastest clock rates and lowest power of any in the world. SyncBurst SRAMs provide a œburst of (typically) 2 to 4 words in response to a single clock
-
Supplier: Cypress Semiconductor Corp.
Description: Cypress is the Synchronous (Sync) SRAM market leader with more than 2.7 billion cumulative units shipped, with lead times of six weeks or less, 99% or higher on-time delivery and legacy product support for up to 20 years. Cypress is the preferred SRAM supplier to customers in several
-
Supplier: Utmel Electronic Limited
Description: IC SRAM 4M PARALLEL 36SOJ
-
Supplier: Utmel Electronic Limited
Description: SRAM CMOS RAM W ECC 4-Mbit
-
Supplier: VAST STOCK CO., LIMITED
Description: SRAM 16Mb MoBL SRAM With ECC
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: 64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Product overview: M36W0R6050T1ZAQE from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules,
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package Product overview: M36D0R6040T0ZAIT from STMicroelectronics is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 2.4V~3.6V 4Mbit TSOPII-44 SRAM ROHS
-
Supplier: Infineon Technologies AG
Description: Applications Human machine interface Industrial robots system solutions for Industry 4.0 Servo motor drive and control
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4MB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 4MB, Memory IC and Storage Component, Memory ICs Products. This
-
Supplier: Microchip Technology, Inc.
Description: write cycles to the SRAM while the EEPROM cells provide high endurance non-volatile storage of Data. With an external capacitor, SRAM data is automatically transferred to the EEPROM upon power-loss. Data can also be transferred manually by using either the hardware store pin or by
-
Supplier: Allied Electronics, Inc.
Description: Memory, Non Volatile RAM; 16 Kbit SRAM;4.75 to 5.5V; 100; PCDIP24; 3mA Standby
-
Supplier: Lingto Electronic Limited
Description: 7MB4048 - 512K X 8 SRAM MODULE
Find Suppliers by Category Top
Featured Products Top
-
High-Performance 32Mb SPI NOR Flash Memory Chip The W25Q32JVSSIQ by Winbond Electronics Corporation America delivers superior performance with its large storage capacity, fast (read more)
Browse Memory Chips Datasheets for Nova Technology(HK) Co.,Ltd -
Clock frequency up to 133MHz Continuous data transfer rate up to 66MB/s in Quad I/O operation Supports execute-in-place and code shadowing applications 65,536 programmable pages with 256 bytes per page Flexible 4KB sector, 32KB block, 64KB block, and (read more)
Browse Memory Chips Datasheets for ERSAELECTRONICS PTE. LTD. -
The EPCS4SI8N from Altera is a highly reliable and efficient configuration device designed for FPGA applications. With a 4Mb memory capacity, it supports in (read more)
Browse Memory Chips Datasheets for Win Source Electronics -
The Analog Devices AD4854 is a fully buffered, 4-channel simultaneous sampling, 20-bit, 1 Msps DAS with differential, wide common-mode range inputs. Operating from a 5 V low-voltage supply, flexible input buffer supplies, and using the precision low (read more)
Browse Analog-to-Digital Converter (ADC) Chips Datasheets for DigiKey -
Reliable 64x4 Asynchronous FIFO Memory for Data Buffering The 57401AW/883B is a robust (read more)
Browse Memory Chips Datasheets for Nova Technology(HK) Co.,Ltd -
The MT53D512M32D2DS-053 WT:D is a 16Gb (2GB) LPDDR4 memory device designed for next-generation high-performance, power-sensitive applications. Featuring dual-channel architecture (x32 bus width) and data rates up to 4266 Mbps, it ensures efficient real (read more)
Browse Memory Chips Datasheets for Win Source Electronics -
Eteily Technologies introduces its 4G 5dBi PCB Internal Antenna, designed for tiny devices that require excellent internal cellular reception. This antenna has a printed PCB radiator and a 1.13 mm cable terminated with a U.FL Connector, making it suitable for embedded use in routers (read more)
Browse Chip Antennas Datasheets for Eteily Technologies India Pvt. Ltd. -
Eteily Technologies develops a tiny 2.4 GHz / 5.8 GHz dual-band PCB internal antenna for embedded wireless devices. This antenna supports the Wi-Fi frequency ranges of 2400-2500 MHz and 5700-5800 MHz, ensuring dependable communication for routers, IoT devices, and wireless (read more)
Browse Chip Antennas Datasheets for Eteily Technologies India Pvt. Ltd. -
J: Standard configuration with 4MB boot partitions C: 153-ball FBGA package (read more)
Browse Memory Chips Datasheets for ERSAELECTRONICS PTE. LTD. -
(80 to 240 Mhz) 4MB to 16MB Flash SPI Wi-Fi 802.11b/g/n (and Bluetooth v4.2) PWM, ADC and DAC, as well as multiple GPIOs. Low power consumption (sleepcurrent 5 uA). This guide is for those who (read more)
Browse WiFi and WiMAX Wireless Chips Datasheets for ODG (Origin Data Global)
More Information Top
Indicates content that may require registration and/or purchase.
-
A 4-Mbit Non-Volatile Chalcogenide Random Access Memory
In addition, typical yield was achieved for the CMOS 4Mb SRAM chips that were processed along with the 64kb arrays.
-
SRAM design on 65nm CMOS technology with integrated leakage reduction scheme
Summary A 4Mb SRAM chip has been fabricated on a high- performance 65nm CMOS technology, shown in Fig 8.
-
Correlation of neutron dosimetry using a silicon equivalent proportional counter microdosimeter and SRAM SEU cross sections for eight neutron energy spectra
Also used in these experiments was a de- vice under test (DUT) board containing a 4 Mb SRAM chip , and a remote computer that monitored the SEU rate induced by the incident neutrons.
-
Weighted round-robin cell multiplexing in a general-purpose ATM switch chip
For ex- ample, a 4 Mb SRAM chip with a 7 ns access time has already been demonstrated [161 and if the technology and capacity of this chip were available to us, the memories in our chip could be three to four …
-
A 500 MHz 4 Mb CMOS pipeline-burst cache SRAM with point-to-point noise reduction coding I/O
Figure 6: 4Mb SRAM chip micrograph.
-
A 200 MHz RISC microprocessor with 128 kB on-chip caches
Figure 6: 4Mb SRAM chip micrograph.
-
Multi-layer interconnect yield model for mega bit BiCMOS SRAMs
A complex 4 - Mb SRAM chip offers no flexibility in SRAM cells and associated circuits.
-
A distributed globally replaceable redundancy scheme for sub-half-micron ULSI memories and beyond
The number of redundant lines used in 4 Mb SRAM pass chips .
-
A 23-ns 4-Mb CMOS SRAM with 0.2-μA standby current
4 - Mb SRAM chip .
-
A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM
4 - Mb SRAM chip photomicrograph.