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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500 mA. Search-friendly keywords include transistor, BJT, switching, amplification, 500 mA, Bipolar Transistor, Single Bipolar
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500mA. Search-friendly keywords include transistor, BJT, switching, amplification, 500mA, Bipolar Transistor, Single Bipolar
- IC(max): 500 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- PD: 625 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 500mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 500mA, Bipolar Transistor, Bipolar
- IC(max): 500 milliamps
- VCEO: 50 volts
- VCBO: 30 volts
- PD: 2,250 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 300V, 500mA. Search-friendly keywords include transistor, BJT, switching, amplification, 300V, 500mA, Bipolar Transistor, Single Bipolar
- IC(max): 500 milliamps
- VCEO: 300 volts
- VCBO: 300 volts
- PD: 20,800 milliwatts
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN, 500V; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:50A; Power Dissipation:250W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: Transistor, NPN, 60 V(CEO), 500 mA, TO-92 Pb-Free
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Supplier: Allied Electronics, Inc.
Description: Transistor, PNP, 60 V(CEO), 500 mA, TO-92 Pb-Free
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Supplier: ODG (Origin Data Global)
Description: 700V 9A 500mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 500mA 30V PNP
- VCEO: 25 volts
- IC(max): 500 milliamps
- PD: 300 milliwatts
- TJ: -55 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 036070-UNR32A500L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA05 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 60 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- hfe: 100
- VCEO: -60 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PMSTA06 Features and benefits High current (max. 500 mA) Collector-emitter voltage: 80 V AEC-Q101 qualified Applications Intended for telephony and professional communication equipment.
- hfe: 100
- VCEO: -80 volts
- IC(max): -500 milliamps
- PD: 200 milliwatts
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistor encapsulated in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PMSTA56 Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter voltage: 80 V Applications General purpose
- hfe: 50
- VCEO: 80 volts
- IC(max): 500 milliamps
- PD: 200 milliwatts
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Supplier: Integra Technologies, Inc.
Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9
- Power Gain: 12 dB
- Output Power: 500 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Allied Electronics, Inc.
Description: Transistor: 500mA 300mW NPN General-Purpose Amplifier, SOT-23, 7IN. Reel
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Supplier: Nexperia B.V.
Description: NPN transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complements: PMSTA55-Q Features and benefits High current (max. 500 mA) Very small SMD plastic package Collector-emitter voltage: 60 V Qualified according to AEC-Q101 and recommended for use in
- Features: General Purpose BJT, Other
- Package Type: SOT323
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912M500 is designed for systems operating over the instantaneous bandwidth of 960-1215 . While operating in class C mode under the specified pulsed conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak
- Power Gain: 7.8 dB
- Operating Frequency: 960 to 1,215 MHz
- Output Power: 500 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: DTB114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 400V, 500mA, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:1.5A; Power Dissipation:1.6W; Transistor Mounting:Surface Mount; No. of Pins:4Pins RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: DTD123EC is an digital transistor (Resistor built-in type transistor). The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: NEC Win Source Part Number: 742937-UPA500T-T1-A Manufacturer Homepage: www.nec.com Reference case: SOT23-5 Reference Date Code: 0836+Rohs Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR,NPN,0.5A,500V,SOT223; Transistor Polarity:NPN; Collector Emitter Voltage Max:400V; Continuous Collector Current:500mA; Power Dissipation:700mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Product Range:- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR,PNP,0.15A,500V,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage Max:500V; Continuous Collector Current:150mA; Power Dissipation:300mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR502EBHZG is a bipolar transistor with large collector current, suitable for low frequency amplifier. It is a highly reliable product for automotive.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 2N3906 Transistor
- Features: Bipolar RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017226-AOT500 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status:
- V(BR)DSS: 33 volts
- PD: 115,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 80mA 80MHz 100mW Surface Mount SSSMini3-F1
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 775769-HCPL-M701-500E Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C Package: 6-SOIC (0.173", 4.40mm Width) 5 Leads Mounting: SMD Output Type: Darlington Input Type: DC Voltage - Forward (Vf) (Typ): 1.4V Number of Channels: 1
- Isolation Voltage: 3,750 volts
- Operating Temperature: -40 to 85 C
- Input: DC
- Features: Other
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Supplier: Utmel Electronic Limited
Description: STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
- VCEO: 50 volts
- IC(max): 500 milliamps
- PD: 2,250 milliwatts
- TJ: -20 to 150 C
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Description: IGBT MOD 1700V 500A 5000W
- Output Power: 5,000 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Richardson RFPD
Description: Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 5 mm x 6 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: OPTOISO 3.75KV TRANSISTOR 6SOIC
- Operating Temperature: -55 to 100 C
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