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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mW Half H-Bridge
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: SOT-223 Darlington Transistors ROHS
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors VCEO=-150V IC=-600mA
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: 2SD600 - Bipolar NPN Transistor, 1A 100V
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: PWR MID PERF TRANSISTOR SOT223 T
- Package Type: SOT223, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Microchip Technology, Inc.
Description: A family of 600V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(on) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel)
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors NPN Darlington
- Transistor Type: Darlington
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high
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Supplier: Rochester Electronics
Description: Bipolar NPN Transistor, 1A 100V
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TO-252 MOSFETs ROHS
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Supplier: Rochester Electronics
Description: Insulated Gate Bipolar Transistor Module
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under pulsing conditions of 10us/10% and Vcc=50V, this common base device supplies a minimum of
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Intersil Corporation Win Source Part Number: 1257457-SP600 Manufacturer Homepage: www.intersil.com/cda /home Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
- Package Type: SOT3
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 600W @ 150us/10%/50V ¦ 1.2-1.4GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 600W @ 128us/2%/50V ¦ 1.030GHz and 1.090GHz Operating Frequencies ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANS NPN DARL 140V 2A SOT223-3
- Package Type: SOT223, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770050-BLA6H1011-600 ,112 Packaging: Bulk Package: SOT539A Current Rating: 72A Frequency: 1.03GHz ~ 1.09GHz Current - Test: 100mA Gain: 17dB Transistor Type: LDMOS (Dual), Common Source Voltage
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
- Package Type: Other
- Polarity: NPN, PNP
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 200mW Half H-Bridge
- Polarity: NPN, PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Darlington Transistors ROHS
- Package Type: SOT223
- Transistor Type: Darlington
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Description: TRANSISTOR
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 120V 1A 12.5W Through Hole SOT-32-3
- Package Type: Other
- Polarity: NPN
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Supplier: Microchip Technology, Inc.
Description: high voltage DC SOA. Most SMPS-type MOSFETs overstate SOA capability at high voltage on the datasheets. Above ~30V and DC conditions, SOA drops faster than is indicated by Power Dissipation (PD) limited operation. For pulsed loads (t <10 ms), there is generally no problem using a standard
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The
- Package Type: Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN - Darlington 140V 2A 250MHz 2W Surface Mount SOT-223-3
- Package Type: SOT223, Other
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
- Polarity: N-Channel, Other
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1040467-FZT600BTA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range
- Package Type: SOT3, Other
- Polarity: NPN, Other
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Supplier: Acme Chip Technology Co., Limited
Description: 6PIN TRANSISTOR DETECTOR, SINGLE
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Supplier: Nexperia B.V.
Description: Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement: PMBT2907AYS Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max
- Package Type: Other
- Polarity: NPN
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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