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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, RF FETs, MOSFETs. This listing
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 600V, Bipolar Transistor, Unclassified. This listing supports
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 600V. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V. This listing supports clearer product discovery for
- Features: IGBT, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20A, 600V. Search-friendly keywords include transistor, BJT, switching, amplification, 20A,
- Features: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, AEC-Q101, BIPOL, NPN, 600V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:-; Power Dissipation Pd:650mW; DC Collector Current:500mA; DC Current Gain hFE:70hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, NPN, 600V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; DC Collector Current:2A; Power Dissipation Pd:50W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mW Half H-Bridge
- Features: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array NPN, PNP 65V, 60V 500mA, 600mA 100MHz 200mW Surface Mount SOT-363
- Polarity: NPN, PNP
- Features: Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 160V, 600mA, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:600mA; Power Dissipation:625mW; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 067820-HBDM60V600W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN, PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ)
- Operating Temperature: -55 to 150 C
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOL, NPN, 600V, SOT-223-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; Transition Frequency ft:-; Power Dissipation Pd:650mW; DC Collector Current:100mA; DC Current Gain hFE:70hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN GP SS 600MA 40V, SOT-23
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Supplier: ODG (Origin Data Global)
Description: SOT-223 Darlington Transistors ROHS
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors VCEO=-150V IC=-600mA
- IC(max): 600 milliamps
- VCEO: 150 volts
- PD: 300 milliwatts
- Output Power: 0.3 watts
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN GP SS 600MA 40V TO-92 PKG
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBT4403 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) Applications Industrial and consumer switching applications
- Transistor Grade / Operating Range: Industrial
- Features: Other
- Package Type: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1040467-FZT600BTA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Intersil Corporation Win Source Part Number: 1257457-SP600 Manufacturer Homepage: www.intersil.com/cda/home Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
- Package Type: SOT3
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Supplier: Nexperia B.V.
Description: PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits High current (max. 600 mA) Collector-emitter voltage VCEO = 40 V Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Switching and linear
- Features: Other
- Package Type: SOT23
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Supplier: Richardson RFPD
Description: IGBT Module. VCE(sat) with positive temperature coefficient. High short circuit capability, self limiting to 6 x Icnom. Fast & soft inverse CAL diodes. Large clearance (10 mm) and creepage distances (20 mm). Isolated copper baseplate using DBC Technology (Direct Copper Bonding). UL recognized, file
- Features: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 016598-FZT600TA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ)
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: PWR MID PERF TRANSISTOR SOT223 T
- IC(max): 2,000 milliamps
- VCEO: 140 volts
- Operating Frequency: 250 MHz
- Output Power: 1.2 watts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-223 Darlington Transistors ROHS
- Features: Darlington
- Package Type: SOT223
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Supplier: VAST STOCK CO., LIMITED
Description: Darlington Transistors NPN Darlington
- Features: Darlington
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Supplier: Utmel Electronic Limited
Description: STMICROELECTRONICS STGE200NB60S IGBT Single Transistor, 200 A, 1.2 V, 600 W, 600 V, ISOTOP, 4 Pins
- VCE(on): 1.2 volts
- IC(max): 200 amps
- tr: 112 ns
- PD: 600,000 milliwatts
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
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Supplier: Utmel Electronic Limited
Description: IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
- VCE(on): 1.8 volts
- IC(max): 100 amps
- PD: 360,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Microchip Technology, Inc.
Description: A family of 600V Superjunction MOSFETs available in a variety of current and package options. Additional Features Ultra Low RDS(on) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel)
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching in high frequency,
- Features: MOSFET
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Description: TRANS NPN/PNP 65V/60V SOT363
- VCEO: 65 volts
- IC(max): 500 to 600 milliamps
- Features: General Purpose BJT, Other
- Packing Method: Tape Reel
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Supplier: Richardson RFPD
Description: The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has
- Power Gain: 17.5 dB
- Output Power: 600 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN - Darlington 140V 2A 250MHz 2W Surface Mount SOT-223-3
- Polarity: NPN
- Features: Other
- Package Type: SOT223
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor device part number IB0912M600 is designed for systems operating over the instantaneous bandwidth of 960-1215 MHz. While operating in class C mode under pulsing conditions of 10us/10% and Vcc=50V, this common base device supplies a minimum of 600 watts of peak
- Power Gain: 8.5 dB
- Operating Frequency: 960 to 1,215 MHz
- Output Power: 600 watts
- Features: Bipolar RF Transistors, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Phototransistor Out Single CTR 160-320%
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Supplier: Utmel Electronic Limited
Description: IGBT Transistors XPT 600V IGBT GenX3 XPT IGBTs
- IC(max): 160 amps
- PD: 750,000 milliwatts
- Number of Transistors in the Chip: 1
- Features: IGBT, Other
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Featured Products Top
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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Browse Transistors Datasheets for DigiKey -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
improve system efficiency and reduce thermal stress. The CM600DU-24FA IGBT module combines high voltage and current capability with low switching losses, enabling efficient power conversion in demanding applications. Its robust design provides reliable operation for motor (read more)
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Rated AC Voltage 0~380V AC Rated DC Voltage 0~540V DC Structural Design Partition wiring, multi-layer shielded (read more)
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The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance (read more)
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