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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, Bipolar Transistor, Bipolar RF Transistors. This listing
- Noise Figure: 1.3 dB
- PD: 380 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 6V. Search-friendly keywords include transistor, BJT, switching, amplification, 3V, 6V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15MA, 6V. Search-friendly keywords include transistor, BJT, switching, amplification, 15MA, 6V, Bipolar Transistor, Bipolar RF Transistors. This listing
- Noise Figure: 2.6 dB
- PD: 90 milliwatts
- TJ: 150 C
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6V, MOSFET Transistor, RF FETs, MOSFETs. This listing
- V(BR)DSS: 8 volts
- TJ: -65 C
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR,NPN,20V,6.6A,SOT223; Transistor Polarity:PNP; Collector Emitter Voltage Max:20V; Continuous Collector Current:6.6A; Power Dissipation:770mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:85MHz RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: SOT-23-6 MOSFETs ROHS
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, NPN & PNP 30V SSOT-6; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:500mA; Power Dissipation Pd:700mW; DC Current Gain hFE:30hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR, QUAD NPN, 40V SSOT-6; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:500mA; Power Dissipation Pd:700mW; DC Current Gain hFE:35hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
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Transistors - TRANSISTORS - Transistors - FETs, MOSFETs - RF - MRF6V2010NBR1 -- 128516-MRF6V2010NBR1Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 128516-MRF6V2010NBR1 Packaging: Reel - TR Voltage Rating: 110V Frequency: 220MHz Current - Test: 30mA Gain: 23.9dB Transistor Polarity: LDMOS Voltage - Test: 50V Power - Output: 10W Status: Obsolete(EOL) Case / Package: TO-272-2
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 031544-STS6NF20V Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Tc) Family Name: STS6NF20V Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On):
- V(BR)DSS: 20 volts
- PD: 2,500 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN/PNP, 30V, SUPERSOT6; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:30V; DC Collector Current:500A; Power Dissipation Pd:700mW; DC Current Gain hFE:50hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 135520-STC6NF30V Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case /
- V(BR)DSS: 30 volts
- PD: 1,500 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors VHV6 250W 50V NI780H
- Features: MOSFET
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors VHV6 500W 50V NI780H
- V(BR)DSS: 110 volts
- Number of Transistors in the Chip: 1
- Output Power: 500 watts
- Power Gain: 19.7 dB
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Supplier: Win Source Electronics
Description: Manufacturer: Freescale Semiconductor - NXP Win Source Part Number: 1226897-MRF6V2150NR1 Manufacturer Homepage: www.freescale.com Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
- Features: Enhancement, MOSFET
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, DARLINGTON, PNP 60V 6A TO-220 PKG
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Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications. Particularly suited as drivers in
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Supplier: Richardson RFPD
Description: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
- Power Gain: 18 dB
- Output Power: 330 watts
- Operating Frequency: 1,200 to 1,400 MHz
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR 30V 2A
- Features: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: -100 volts
- IC(max): -6 milliamps
- PD: 1.3 milliwatts
- TJ: 175 C
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Supplier: DigiKey
Description: TRANS NPN 40V 0.6A SOT-23-6L
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: -60 volts
- IC(max): -6 milliamps
- PD: 1.35 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY. Features and benefits High thermal power dissipation capability Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB)
- VCEO: -40 volts
- IC(max): -6 milliamps
- PD: 1.35 milliwatts
- TJ: 175 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements
- VCEO: 40 volts
- IC(max): 6 milliamps
- PD: 1.35 milliwatts
- TJ: 175 C
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, NPN, 40V, 0.6A, 50A/
- Polarity: NPN
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 30V 400mW 270@100mA,2V 1A 2 NPN TUMT-6 Bipolar Transistors - BJT ROHS
- IC(max): 1,000 milliamps
- VCEO: 30 volts
- fT: 320 MHz
- PD: 400 milliwatts
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Supplier: DigiKey
Description: Optoisolator Transistor with Base Output 2500Vrms 1 Channel 8-DIP
- Isolation Voltage: 2,500 volts
- Operating Temperature: -55 to 100 C
- Input: DC
- Output: Phototransistor
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Description: MOSFET N-CH 20V 6A 8SO
- V(BR)DSS: 20 volts
- IDSS: 6,000 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
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Supplier: Acme Chip Technology Co., Limited
Description: OPTOISO 5KV TRANS W/BASE 8DIP
- TJ: -55 to 100 C
- Features: Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
- Features: Bipolar RF Transistors
- Polarity: NPN
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Description: OPTOISO 2.5KV TRANS W/BASE 8DIP
- Operating Temperature: -55 to 100 C
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