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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP BIPOLAR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 200mA 40V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 60V 200mW
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: Transistor
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER UHF BAND N-CHANNEL FET
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF MOSFET Transistors VHV6 500W 50V NI780H
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-23 Bipolar Transistors - BJT ROHS
- Package Type: SOT23
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed radar transistor device part number IB1214M6 is designed for L-Band radar systems operating over the instantaneous bandwidth of 1.200 - 1.400 GHz. While operating in class C mode this common base device supplies a minimum of 6 watts of peak pulse power
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, SOT6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Radwell International
Description: TRANSISTOR, 6POINT. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Operating Frequency: 2 to 175 MHz
- Output Power: 80 watts
- Power Gain: 13 dB
- Transistor Type: MOSFET RF Transistors
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- Transistor Type: General Purpose BJT
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 20V 6.6A 85MHz 2.6W Surface Mount SOT-223
- Package Type: SOT223, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Automotive
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.0 dB at 6 GHz Hermetically
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: NPN POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1129677-6N139V Packaging: Tube Mounting Style: Through Hole Output Type: Darlington with Base Input Type: DC Current - Output / Channel: 60mA Voltage - Isolation: 2500Vrms Categories: Isolators Supplier
- Package Type: SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- TJ: -40 to 85 C
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Supplier: ROHM Semiconductor GmbH
Description: SST2222A is bipolar transistor for audio frequency small signal amplifier.
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: Power Bipolar Transistor, 16A, 140V, NPN
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 031544-STS6NF20V Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Tc) Family Name: STS6NF20V Categories: Discrete Semiconductor Products
- PD: 2500 milliwatts
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz)
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Linear Systems
Description: The IT120A Series Monolithic Dual, NPN Transistor is a direct replacement for the Intersil IT120 Series. It is ideal for Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC 8L ROHS, and Tested Die. All
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: TE Connectivity
Description: Pin Diameter : 2.54 MM [.1 INCH ] Socket Type : Transistor Terminal Material : Beryllium Copper Terminal Plating : Gold Industry Standards
- Contact Plating: Gold Plating
- Current Rating: 3 amps
- Mounting: Other
- Number of Contacts: 3
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Supplier: ODG (Origin Data Global)
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
- IC(max): 200 to 500 milliamps
- Operating Frequency: 100 to 300 MHz
- Output Power: 0.5000 watts
- Package Type: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1031210-MRF6V2150NBR 5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 50 Voltage - Rated: 110 V Frequency: 220MHz Current - Test: 450 mA Gain: 25dB Transistor Type
- Operating Frequency: 220 MHz
- Output Power: 150 watts
- Package Type: SOT3
- Power Gain: 25 dB
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-16 Darlington Transistor Arrays ROHS
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- IC(max): 6000 milliamps
- PD: 1300 milliwatts
- Package Type: Other
- Polarity: NPN
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Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
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Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
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collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
(VCEO): 40V Collector-Base Voltage (VCBO): 60V Emitter-Base Voltage (VEBO): 6V Continuous Collector Current (IC): 200mA DC Current Gain (hFE): 100 to 300 Collector (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics