-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PRMH9/SOT1268 DFN1412-6
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT DUAL NPN 20V 500MA
- Transistor Type: Bipolar RF Transistors
-
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased DUAL PNP 50V 50MA
- Transistor Type: Bipolar RF Transistors
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased NPN/PNP 50V 70MA
- Transistor Type: Bipolar RF Transistors
-
Supplier: ODG (Origin Data Global)
Description: SOT-563 Digital Transistors ROHS
-
Supplier: ODG (Origin Data Global)
Description: SOT-363 Digital Transistors ROHS
-
Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-236 Bipolar Transistors - BJT ROHS
- Transistor Type: Bipolar RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 855176-2SC3840(9)-AZ Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 57
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
-
Supplier: ODG (Origin Data Global)
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
- Package Type: Other
- Polarity: NPN, PNP, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: ODG (Origin Data Global)
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-92NL Bipolar Transistors - BJT ROHS
- Package Type: TO-92
- Transistor Type: Bipolar RF Transistors
-
Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1229447-UF28100V Drain to Source Voltage (Vdss): 65 V Frequency: 500 MHz Number of Elements: 1 Gain: 10 dB Number of Pins: 8
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
-
Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
-
Transistors - TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLF2425M9L30U -- 770092-BLF2425M9L30USupplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770092-BLF2425M9L30U Packaging: Tube Package: SOT-1135A Frequency: 2.45GHz Current - Test: 20mA Gain: 18.5dB Transistor Type: LDMOS Voltage - Test: 32V Power - Output: 30W Family Name: BLF2425M9
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
-
Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors VCEO=-150V IC=-600mA
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Radwell International
Description: TRANSISTOR MOSFET N-CH 900V 9A TO-3PN. FREE 2 YEAR RADWELL WARRANTY
-
Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
-
Supplier: Acme Chip Technology Co., Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Package Type: Other
- Transistor Type: General Purpose BJT
-
Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP + Diode (Isolated) 12V 1.5A 400MHz 500mW Surface Mount TSMT5
- Package Type: SOT23, Other
- Polarity: PNP
-
Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB2856S30 is designed to operate in class C mode. This common base device supplies a minimum of 30 watts of peak pulse power under the conditions of 12ìs pulse width and 3% duty cycle. All devices are 100% screened for large signal RF
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Rochester Electronics
Description: Nexperia PUMH9 Small Signal Bipolar Transistor, 0.1A, 50V, NPN, SC-88
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
-
Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
-
Bipolar RF Transistors - Discrete Semiconductor Products - Transistors - Bipolar (BJT) -- UMD9NFHATR
Description: PNP+NPN DIGITAL TRANSISTOR (WITH
- IC(max): 100 milliamps
- Package Type: Other
- Packing Method: Tape Reel, Other
- VCEO: 50 volts
-
Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz)
- Package Type: Other
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Other
- Transistor Type: Bipolar RF Transistors
-
Supplier: Lansdale Semiconductor, Inc.
Description: The 5400/7400 series of transistor-transisto r logic consists of medium speed TTL integrated circuits. This high noise immunity family was designed for general digital logic applications requiring clock frequencies to 30MHz and switching speeds in the 12-15 ns range under moderate capacitive
- IC Package Type: DIP, Other
- Logic Family: Transistor-Transistor Logic (TTL)
- Number of Bits: 9
- Number of Units in Chip: 1
-
Description: NPN+NPN DIGITAL TRANSISTOR (CORR
- IC(max): 100 milliamps
- Package Type: Other
- Packing Method: Tape Reel, Other
- VCEO: 50 volts
-
Supplier: TE Connectivity
Description: Pin Diameter : 2.54 MM [.1 INCH ] Socket Type : Transistor Terminal Material : Beryllium Copper Terminal Plating : Gold Industry Standards
- Contact Plating: Gold Plating
- Current Rating: 3 amps
- Mounting: Other
- Number of Contacts: 3
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: SOIC-16 Darlington Transistor Arrays ROHS
Find Suppliers by Category Top
Featured Products Top
-
Extending our range of high-power product choice, Nexperia launches our new IGBT's in 600 V (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 mΩ, 50 mΩ and 70 mΩ, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended (read more)
Browse Transistors Datasheets for Nexperia B.V. -
Explore the features and specifications of the BSS138PW,115 N-channel MOSFET from Nexperia USA Inc. This MOSFET is designed for a wide range of electronic applications, offering a balanced supply and demand status and medium popularity. With a drain-source breakdown voltage of 60V and a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities. The 2N2907AUB is RoHS compliant (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics