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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 9V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 9V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer
- V(BR)DSS: 14 volts
- PD: 200 milliwatts
- TJ: -65 C
- MOSFET Operating Mode: Enhancement
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET and Status Flag OVLO 5.9 V, WDFN10, 2.5x2 mm, 0.5P, 3000-REEL Product overview: NCP347MTAFTBG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and
- TJ: -40 C
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 0.9V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 0.9V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer
- IC(max): 100,000 milliamps
- VCEO: 50 volts
- PD: 300 milliwatts
- TJ: -65 C
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors IGBT, NCH 17A 1.58v 300mJ
- Features: IGBT
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR,NPN,30V,4.9A,SOT223; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:4.9A; Power Dissipation:700mW; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:145MHzRoHS Compliant: Yes
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Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
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Supplier: Newark, An Avnet Company
Description: MOSFET Transistor, N Channel, 60 A, 30 V, 9 mohm, 10 V, 1.9 V RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: UDFN-6(2x2) MOSFETs ROHS
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PRMH9/SOT1268 DFN1412-6
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 855176-2SC3840(9)-AZ Series: * Features: Bipolar (BJT) Transistor Package: Bulk Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status:
- Features: Bipolar RF Transistors
- Package Type: SOT3
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- TJ: -55 to 150 C
- Features: Commercial, MOSFET
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Supplier: Newark, An Avnet Company
Description: RF WIDEBAND TRANSISTOR, NPN, 15V, 9GHZ, 3-SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:15V; Transition Frequency:9GHz; Power Dissipation:150mW; Continuous Collector Current:18mA; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - Pre-Biased NPN/PNP 50V 70MA
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 1185656-IMX9 Manufacturer Homepage: www.rohm.com Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Embedded Design & Development, Audio, Industrial, Motor Drive & Control,
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 276596-PIMH9 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 046018-QST9 TR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 320MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case /
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Newark, An Avnet Company
Description: MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: INFINEON AUIRF9Z34N MOSFET Transistor, P Channel, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
- V(BR)DSS: -55 volts
- PD: 68,000 milliwatts
- TJ: -55 to 175 C
- Number of Transistors in the Chip: 1
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1PCSPNP-预偏置,1PCSNPN 150mW 100mA 50V 500nA SOT-363 Digital Transistors ROHS
- Polarity: NPN, PNP
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Supplier: LCSC Electronics Technology (HK) Limited
Description: TO-236 Bipolar Transistors - BJT ROHS
- Features: Bipolar RF Transistors
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Description: IGBT 430V 21A TO220-3
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: VISHAY IRLI630GPBF. MOSFET Transistor, N Channel, 5.9 A, 200 V, 400 mohm, 5 V, 1 V
- V(BR)DSS: 200 volts
- rDS(on): 0.4 ohms
- PD: 35,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT, 430V, 10A, 1.95V, 200MJ, D
- Features: IGBT, Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP + Diode (Isolated) 12V 1.5A 400MHz 500mW Surface Mount TSMT5
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: Transistor; SS T092 RF Transistor NPN 160V -Lead Free
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,9A I(D),TO-263AB
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Nexperia B.V.
Description: PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP HighV 500V
- VCEO: 500 volts
- IC(max): 150 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces
- Features: Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Output Power: 80 watts
- Power Gain: 13 dB
- Operating Frequency: 2 to 175 MHz
- Features: MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: NPN/NPN Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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