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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD0912M60 is designed for the frequency band 960-1215 . Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 watts of power across the instantaneous operating bandwidth of 960-1215 . All devices are
- Power Gain: 16.8 dB
- Operating Frequency: 960 to 1,215 MHz
- Output Power: 60 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1214M10 is designed for L-Band radar operating at 1200-1400 . This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15 watt of peak pulse power. All devices are 100% screened for large signal parameters.
- Power Gain: 13.2 dB
- Operating Frequency: 1,200 to 1,400 MHz
- Output Power: 10 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source
- Power Gain: 11.5 dB
- Operating Frequency: 2,700 to 3,100 MHz
- Output Power: 30 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Newark, An Avnet Company
Description: RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V / REEL RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V / REEL RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V / REEL RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: Airfast RF Power LDMOS Transistors, 1200-1400 MHz, 1000 W Peak, 50 V / REEL RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2
- Power Gain: 25.4 dB
- Output Power: 25 watts
- Features: Other, Tape Reel
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Supplier: Utmel Electronic Limited
Description: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
- Power Gain: 25.4 dB
- Output Power: 25 watts
- Features: Other, Tape Reel
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Supplier: Utmel Electronic Limited
Description: AIRFAST RF POWER LDMOS TRANSISTO
- Power Gain: 19.3 dB
- Output Power: 231 watts
- Features: Other, Tape Reel
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Supplier: Wolfspeed
Description: The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
- Power Gain: 18.5 dB
- Output Power: 380 watts
- Operating Frequency: 500 to 1,000 MHz
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: RF Power LDMOS Transistor. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz
- Power Gain: 19.5 dB
- Output Power: 100 watts
- Operating Frequency: 720 to 960 MHz
- Features: Other
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Supplier: Wolfspeed
Description: The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features
- Power Gain: 20 dB
- Output Power: 12 watts
- Operating Frequency: 900 to 2,700 MHz
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PTVA043502EC and PTVA043502FC are LDMOS FETs designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with bolt-down and earless flanges. Manufactured with Wolfspeed's advanced LDMOS
- Power Gain: 18 dB
- Output Power: 350 watts
- Operating Frequency: 470 to 860 MHz
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device
- Power Gain: 18.5 dB
- Output Power: 200 watts
- Operating Frequency: 960 to 1,600 MHz
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: RF FET LDMOS 110V 20.8DB SOT539B
- Power Gain: 20.8 dB
- Output Power: 250 watts
- Features: Other, Tape Reel
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF power trans LDmoST plastic
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Power LDMOS transistor
- Features: Other
- Transistor Type: Power MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 3W 40V 1GHz LDMOS RF Transistor, N-CH, 2.5A, 17dB, PowerFLAT Product overview: PD55003L-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- PD: 14,000 milliwatts
- TJ: -65 C
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: ODG (Origin Data Global)
Description: RF POWER LDMOS TRANSISTOR HF UP
- Power Gain: 17.3 dB
- Operating Frequency: 1,500 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 8W 12.5V 500MHz LDMOS in PowerFLAT plastic package Product overview: PD55008L-E from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and
- PD: 19,500 milliwatts
- TJ: -65 C
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770079-BLF182XRSU Packaging: Tray Package: SOT-1121B Frequency: 108MHz Current - Test: 100mA Gain: 28dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 50V Power - Output: 250W Family Name: BLF182XRS Categories:
- Output Power: 250 watts
- Power Gain: 28 dB
- Operating Frequency: 108 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770182-BLF888DSU Packaging: Bulk Package: SOT539B Frequency: 860MHz Current - Test: 1.3A Gain: 21dB Transistor Type: LDMOS Voltage - Test: 50V Power - Output: 250W Family Name: BLF888DS Categories: Discrete Semiconductor
- Output Power: 250 watts
- Power Gain: 21 dB
- Operating Frequency: 860 MHz
- Features: Bulk Pack, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770173-BLF872,112 Packaging: Tray Package: SOT800 Current Rating: 41A Current - Test: 900mA Transistor Type: LDMOS Voltage - Test: 32V Power - Output: 300W Part Status: Obsolete(EOL) Family Name: BLF872 Categories: Discrete
- Output Power: 300 watts
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other, Tray
- Package Type: SOT3
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Description: RF POWER LDMOS T0270
- Features: Bulk Pack, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770107-BLF578,112 Packaging: Tray Package: SOT539A Current Rating: 88A Frequency: 225MHz Current - Test: 40mA Gain: 24dB Transistor Type: LDMOS (Dual), Common Source Voltage - Test: 50V Power - Output: 1200W Family Name:
- Output Power: 1,200 watts
- Power Gain: 24 dB
- Operating Frequency: 225 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: UHF power LDMOS Transistor Product overview: BLF898SU from Ampleon is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Transistor Type: MOSFET
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Description: RF MOSFET LDMOS
- Features: Bulk Pack, Other
- Transistor Type: MOSFET
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Supplier: Lingto Electronic Limited
Description: RF POWER LDMOS TRANSISTOR
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET LDMOS
- Features: Bulk Pack, Other
- Transistor Type: MOSFET
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Supplier: DigiKey
Description: TRANSISTOR RF LDMOS SOT979A
- Features: Other
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Supplier: Mini-Circuits
Description: Mini-Circuits ZPUL-30P+ utilizes high power LDMOS transistor output stage. Class A operation accept any kind of modulation. The frequency range is so wide (280,000:1) that the amplifier may handle long pulses, 15µsec typ. with very short rise and fall duration 1.1 nsec. typ. Of
- Operating Temperature: -20 to 65 C
- Nominal Impedance: 50 Ohms
- Connectors: BNC
- Package Type: Connectorized
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Supplier: Richardson RFPD
Description: The A3M39SL039 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells and low power remote radio heads. The
- Frequency Range: 3,700 to 3,980 MHz
- Maximum Gain: 28 dB
- Minimum Operating Voltage: 30 volts
- Maximum Operating Voltage: 30 volts
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Supplier: Richardson RFPD
Description: power RF LDMOS transistors and also features built in control and monitoring, with protection functions to insure high availability. Empower RF 1193 can be factory configured for 48VDC yielding up to 200W output. Consult Richardson RFPD for operation and limitations of this
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Supplier: Microchip Technology, Inc.
Description: radiation hardened microcontroller family. The availability of a 5V to 1.8V regulator and the 5V tolerant IO permits easy re-targeting of obsolete or end-of-life ASICs with 5V core supply. The ATMX150RHA offers some High Voltage possibilities as well with some LDMOS transistors
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available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
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RF Power: GaN Moves In for the Kill
Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to the annals of history? Well you'd certainly think so, based on articles in the trade press, symposium
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Lateral Power Transistors in Integrated Circuits
M.A. Amberetu, C.A.T. Salama, 150-V class superjunction power LDMOS transistor switch on SOI, in International Symposium on Power Semiconductors and ICs, Santa Fe, USA, 2002 63.
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http://www.nxp.com/documents/data_sheet/BLF8G09LS-270W_8G09LS-270GW.pdf
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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http://www.nxp.com/documents/selection_guide/75016952.pdf
Power LDMOS transistor for base station applications .
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http://www.nxp.com/documents/data_sheet/BLF8G20LS-140V_20LS-140GV.pdf
140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
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http://www.nxp.com/documents/data_sheet/BLF878.pdf
UHF power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLF988_BLF988S.pdf
Power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLL6H1214-500_1214LS-500.pdf
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
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http://www.nxp.com/documents/data_sheet/BLF574.pdf
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
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http://www.nxp.com/documents/data_sheet/BLF888.pdf
UHF power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLF6G22L-40P_6G22LS-40P.pdf
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.