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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, PNP, 80V, 1A; Transistor Polarity:PNP; Collector Emitter Voltage Max:80V; Continuous Collector Current:1A; Power Dissipation:850mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:50MHz RoHS Compliant: No
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: PNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BCM56DS Features and benefits High collector current capability IC and ICM Reduces component count Reduces pick and place costs Current gain matching 5%
- Features: Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 1A, TO-1; Transistor Polarity:PNP; Collector Emitter Voltage Max:-; Continuous Collector Current:1A; Power Dissipation:650mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -0.6A, -60V, SOT-223
- VCEO: -60 volts
- IC(max): -600 milliamps
- Features: General Purpose BJT, Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: PNP/PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PEMX1 Features and benefits 300 mW total power dissipation Very small 1.6 x 1.2 mm ultra thin package Self alignment during soldering due to straight
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT25
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Supplier: Nexperia B.V.
Description: PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits Very low collector-emitter saturation voltage
- Features: Other
- Polarity: PNP
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Supplier: Nexperia B.V.
Description: PNP/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4130PANP NPN/NPN complement: PBSS4130PAN Features and benefits Very low collector-emitter saturation voltage VCEsat High
- Features: Other
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP 100V 6A
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Newark, An Avnet Company
Description: RF TRANSISTOR, NPN/PNP, 50V, 0.1A; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 80V, 1A, SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:145MHz; Power Dissipation Pd:500mW; DC Collector Current:-1A; DC Current Gain hFE:63hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR PNP 300V 0.5A
- Features: Other
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP DARL 60V 5A
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, PNP TRAN 100V 25A
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Transistors - PNP+PNP, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) -- IMB3ASupplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR, PNP
- VCEO: 80 volts
- Output Power: 1.5 watts
- TJ: -65 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications. Particularly suited as drivers
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Supplier: Utmel Electronic Limited
Description: PNP Bipolar Digital Transistor (BRT)
- IC(max): 100 milliamps
- VCEO: 50 volts
- PD: 246 milliwatts
- TJ: -55 to 150 C
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Supplier: Accuris
Description: TRANSISTOR, HIGH FREQUENCY, PNP, GERMANIUM
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Supplier: Accuris
Description: TRANSISTOR, PNP, SILICON TYPE 2N329A
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 80 volts
- PD: 1,000 milliwatts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing
- IC(max): 1,000 milliamps
- VCEO: 20 volts
- VCBO: 25 volts
- fT: 250 MHz
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Supplier: Micross Components, Inc.
Description: Micross Continues to Build Inventory on the Industry's Most Popular Parts Part Number - Manufacturer - Description - Availability - Request Quote 1N3595 Fairchild/Onsemi High Conductance Fast Diode Available
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- IC(max): 1,000 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- fT: 150 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors.
- PD: 200 milliwatts
- Operating Frequency: 250 MHz
- Features: Bipolar RF Transistors, Other
- Polarity: PNP
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: PNP
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 205147-IMB1A Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status:
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 264168-FMA1A Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k
- Features: Other
- Polarity: PNP
- Package Type: SOT3
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