PZT 5h

Description: NTNS3A67PZT5G - MOSFET P-CH 20V SOT883

• Features: MOSFET, Other
• Polarity: P-Channel
• Packing Method: Tape Reel

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 096408-PZT3904 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN Family Name: PZT3904 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to

• V_CEO: 40 volts
• I_C(max): 200 milliamps
• P_D: 1,000 milliwatts
• T_J: -55 to 150 C

Description: Manufacturer: ON Semiconductor Win Source Part Number: 060710-NTUD3171PZT5G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case /

• V_(BR)DSS: 20 volts
• P_D: 125 milliwatts
• T_J: -55 to 150 C
• Features: MOSFET, Other

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 027018-PZT3906 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: PNP Family Name: PZT3906 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to

• Operating Temperature: -55 to 150 C

Description: Manufacturer: ON Semiconductor Win Source Part Number: 1083957-NTNUS3171PZT5G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 125mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Status:

• V_(BR)DSS: 20 volts
• P_D: 125 milliwatts
• T_J: -55 to 150 C
• Features: MOSFET, Other

Description: MOSFET T1 20V P-CH SOT-1123

• Features: MOSFET

Description: Morgan Electro Ceramics announces the release of our new piezoceramic materials, the PZT-5K HD series, for use in medical sensors and low power medical devices. The new materials are specifically formulated with high coupling values and improved dielectric properties and are well suited for

• Max Use / Curie Temperature: 150 to 365 C
• Density: 7.699013263279299 to 8.198949189466266 g/cc
• Features: Dielectric Ceramic, Piezoelectric Ceramic

Description: PFET XLLGA3 20V SPCL Product overview: NTNS3A92PZT5G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package

• Features: MOSFET

Description: Mosfet Array 2 P-Channel (Dual) 20V 200mA 125mW Surface Mount SOT-963

• Features: Other

Description: P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123

• Features: Other
• Polarity: P-Channel

Description: SS SOT223 SW XSTR NPN 40V

• Packing Method: Bulk Pack
• Features: General Purpose BJT, Other

Description: IEEE 1394 Controller IEEE 1394a-2000, OHCI-Lynx™ PCI Interface 100-TQFP (14x14)

• Supply Voltage: 5 V
• Device Type: CardBus Controller
• Features: Other, RoHS Compliant
• Technology: PCI

Description: MOSFET P-CH 20V 281MA SOT883 Product overview: NTNS3A65PZT5GHW from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM

• P_D: 155 milliwatts
• T_J: -55 to 150 C
• Features: MOSFET, Other

Description: MOSFET P-CH 20V 150MA SOT1123

• V_(BR)DSS: 20 volts
• I_DSS: 0.15 milliamps
• Features: MOSFET, Other
• Packing Method: Tape Reel

Description: P-Channel JFET, -20V, 150mA, 3.5R, SOT-1123 Product overview: NTNUS3171PZT5G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement

• P_D: 125 milliwatts
• T_J: -55 C
• Features: MOSFET
• Polarity: P-Channel

Description: Small Signal MOSFET 20V 150mA 5 Ohm Dual P-Channel SOT-963 with ESD, SOT-963 1x1, 0.35P, 8000-REEL Product overview: NTUD3171PZT5G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for

• P_D: 125 milliwatts
• T_J: -55 C
• Features: MOSFET
• Polarity: P-Channel

Description: 100V 1W 140@500mA,5V 4A NPN SOT-223-3 Bipolar (BJT) ROHS

Description: Bipolar Transistors - BJT 0.2A 40V 1.5W NPN

• Features: Bipolar RF Transistors

Description: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.5W Surface Mount SOT-223 (TO-261)

• Features: Other
• Polarity: PNP

Description: IC IEEE 1394 HOST CNTRLR 100TQFP

• Supply Voltage: 5 V
• Device Type: CardBus Controller, Sensor Interface
• Technology: IEEE 1394 (FireWire^®)
• Features: Other

Description: MOSFET T1 20V P-CH SOT-1123

• V_(BR)DSS: -20 volts
• P_D: -200 milliwatts
• T_J: -55 to 150 C
• Number of Transistors in the Chip: 1

Description: 40V 1.5W 100@150mA,10V 600mA NPN SOT-223-3 Bipolar Transistors - BJT ROHS

• I_C(max): 600 milliamps
• V_CEO: 40 volts
• f_T: 300 MHz
• P_D: 1,500 milliwatts

Description: Nuclear heat exchanger vibration Research & Development Amplitude Piezoceramic, 1-3 PZT / polymer composite and PVDF film Research & Development Displacement Piezoelectric stack motion

• Operating Distance: 0.0700000378 to 0.1750000945 inch

Description: Optional PZT Drive >5,000 Hours MTBF

• Stroke or X-Axis Travel: 0.393701 to 1.968505 inch
• Rated Speed: 0.029527559055118124 in/sec
• Rated Force: 8.992 lbs
• Motor Continuous Power: 0.001675275481128525 HP

Description: with integrated analog and digital functions F-RAM TechnologyCypress F-RAM is built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby

• Density: 4 to 4,000 kbits
• Pin Count: 8 to 48
• Supply Voltage: 1.8 V, 3 V, 5 V
• Features: Commercial, Industrial, Other

Description: requirement. Versions with inner holes or for use in cryogenic and UHV environments up to 10-9 hPa Available options PZT ceramic material Non-magnetic versions Operating voltage range, displacement, layer thickness, cross-sectional dimension Load capacity, force generation Mechanical

• Maximum Displacement: 1 to 10 µm
• Blocked Force: 10.000000000000002 to 300 N
• Maximum Operating Voltage: -250 to 250 volts
• Resonance Frequency: 50 to 330 kHz

Description: actuators is ±0.02 % of the actuators length and ±0.01 % for longitudinal piezo actuators. This value is ten times lower when compared to piezo actuators made of lead zirconate titanate (PZT). The motion is highly linear and almost hysteresis free. Customized versions and other specifications

• Maximum Displacement: 1 µm
• Maximum Operating Voltage: 500 volts
• Stiffness: 140 to 900 N/µm
• Resonance Frequency: 105 to 160 kHz

Description: 5,895,997) 750 Watts average output power, 1500 Watts peak output power Automatic short open protection Includes RFI (radio frequency interference) filter 9 “Vibra-bar®” transducers, 18 piezoelectric (PZT) stacks mounted to tank bottom 3/4” stainless steel drain valve- located on the side of

• Wash Tank Capacity: 25 gallons
• Internal Length: 24 inch
• Internal Width: 24 inch
• Internal Depth / Height: 12 inch

Description: shieldedENVIRONMENTALTemperature Range: -50 to 120°C (-58 to 248°F)Vibration Limit: 500 g peakShock Limit: 5000 g peakElectromagnetic Sensitivity, Equiv. g, Max: 70 µg/gaussSealing: HermeticBase Strain Sensitivity, Max: .0002 g/microstrainPHYSICALSensing Element Design: PZT

• Acceleration: 80 g
• Frequency Range: 0.5 to 14,000 Hz
• Minimum Accuracy: 5 +/-% FS
• Maximum Shock: 5,000 g

Description: Oxide, La2O3 Lead Titanate, PbTiO3 Lead Zirconate, PbZrO3 Lead Zirconate-Titanate, PZT Lithium Niobate, LiNbO3 Magnesium Oxide, MgO Molybdenum Oxide, MoO3 Niobium Pentoxide, Nb2O5 Rare Earth Oxides, RE2O3 Silicon Dioxide, SiO2 Silicon Monoxide, SiO Strontium Oxide, SrO Strontium Titanate,

• Type: CVD / Chemical Precursor
• Material: Oxides

Description: imaging, auto-focusing, scanning interferometry, and confocal microscopy. NPO stages feature highly reliable, multi-layer, low-voltage, piezoelectric transducer (PZT) stacks, which are optimized for high-duty cycle operations. Image shifts and tilt are minimized by an FEA-modeled and

• Mount Type: Lens Holder
• Features: Other

Description: imaging, auto-focusing, scanning interferometry, and confocal microscopy. NPO stages feature highly reliable, multi-layer, low-voltage, piezoelectric transducer (PZT) stacks, which are optimized for high-duty cycle operations. Image shifts and tilt are minimized by an FEA-modeled and

• Mount Type: Lens Holder
• Features: Other