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Supplier: Rochester Electronics
Description: PZT2222 - SS SOT223 SW XSTR NPN 40V
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Supplier: Rochester Electronics
Description: NTNS3A92PZT5G - MOSFET P-CH 20V SPCL XLLGA3
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: NTNS3A65PZT5GHW - MOSFET P-CH 20V 281MA
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel
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Supplier: Rochester Electronics
Description: NTNS3A67PZT5G - MOSFET P-CH 20V SOT883
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel
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Supplier: Win Source Electronics
Description: Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 1W
- IC(max): 200 milliamps
- Operating Frequency: 300 MHz
- PD: 1000 milliwatts
- Package Type: SOT3, Other
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Supplier: Win Source Electronics
Description: Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223-4 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 400mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 1W
- Package Type: SOT3, Other
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT
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Supplier: Quarktwin Technology Ltd.
Description: IEEE 1394 Controller IEEE 1394a-2000, OHCI-Lynx™ PCI Interface 100-TQFP (14x14)
- Features: RoHS Compliant
- IC Package Type: QFP, TQFP, Other
- Supply Voltage: 5 V, Other
- Technology: PCI, Other
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Supplier: Win Source Electronics
Description: Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 300mV @ 5mA, 50mA Typical Gain (hFE) (Min): 100 @ 10mA, 1V Maximum Power Dissipation: 1.5W
- IC(max): 200 milliamps
- Operating Frequency: 300 MHz
- PD: 1500 milliwatts
- Package Type: SOT3, Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 060710-NTUD3171PZT5G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature
- PD: 125 milliwatts
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
- Polarity: P-Channel
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Supplier: Morgan Advanced Materials
Description: Morgan Electro Ceramics announces the release of our new piezoceramic materials, the PZT-5K HD series, for use in medical sensors and low power medical devices. The new materials are specifically formulated with high coupling values and improved dielectric properties and are
- Max Use / Curie Temperature: 150 to 365 C
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET T1 20V P-CH SOT-1123
- Transistor Type: MOSFET
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Supplier: LIXINC Electronics Co., Limited
Description: MOSFET P-CH 20V 150MA SOT1123
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: LIXINC Electronics Co., Limited
Description: TSB12LV26 OHCI-LYNX PCI-BASED IE
- IC Package Type: QFP, TQFP, Other
- Supply Voltage: 5 V, Other
- Technology: Other
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Supplier: DigiKey
Description: P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123
- Package Type: Other
- Polarity: P-Channel
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Supplier: DigiKey
Description: Mosfet Array 2 P-Channel (Dual) 20V 200mA 125mW Surface Mount SOT-963
- Package Type: Other
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Description: IC IEEE 1394 HOST CNTRLR 100TQFP
- IC Package Type: QFP, TQFP
- Supply Voltage: 5 V, Other
- Technology: IEEE 1394 (FireWire®), Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET PFET XLLGA3 20V
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET PFET XLLGA3 20V 2A 1.6OHM
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET PFET SOT883 20V 281MA 1.3
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 1.5W Surface Mount SOT-223 (TO-261)
- Package Type: Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 1.5W Surface Mount SOT-223 (TO-261)
- Package Type: Other
- Polarity: NPN
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Supplier: Acme Chip Technology Co., Limited
Description: SS SOT223 SW XSTR NPN 40V
- Transistor Type: General Purpose BJT
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Supplier: Utmel Electronic Limited
Description: MOSFET T1 20V P-CH SOT-1123
- Transistor Type: MOSFET
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Description: MOSFET P-CH 20V SOT883
- Package Type: Other
- Packing Method: Tape Reel, Other
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Description: MOSFET 2P-CH 20V 0.2A SOT963
- IDSS: 200 milliamps
- Packing Method: Tape Reel, Other
- V(BR)DSS: 20 volts
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Description: MOSFET P-CH 20V 223MA 3XLLGA
- IDSS: 0.2230 milliamps
- Package Type: Other
- Packing Method: Tape Reel, Other
- V(BR)DSS: 20 volts
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 1.5W 100@150mA,10V 600mA NPN SOT-223-3 Bipolar Transistors - BJT ROHS
- IC(max): 600 milliamps
- PD: 1500 milliwatts
- Package Type: SOT223
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: ON Semi MOSFET, NTNUS3171PZT5G - Discrete Semiconductors - MOSFET Transistors
- Package Type: Other
- Polarity: P-Channel
- V(BR)DSS: 20 volts
- rDS(on): 3.5 ohms
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Supplier: MTI Instruments Inc.
Description: Semiconductor Positioning Tape Cartridge Movement Power Generation Amplitude Nuclear heat exchanger vibration Research & Development Amplitude Piezoceramic, 1-3 PZT / polymer composite and PVDF film Research & Development Displacement Piezoelectric stack motion
- Operating Distance: 0.0300 to 0.0750 inch
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Supplier: Cypress Semiconductor Corp.
Description: Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM. F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more
- Density: 4 to 4000 kbits
- IC Package Type: SOIC, TSOP, Other
- Pin Count: 8 to 48
- Supply Voltage: 1.8 V, 3 V, 5 V
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Supplier: PI (Physik Instrumente) L.P.
Description: The M-227 Series provides very high resolution and smooth motion. It requires external limit switches. 10, 25 & 50 mm Travel Ranges 0.05 Micron Minimum Incremental Motion Non-Rotating Tip Closed-Loop DC Motor Compatible with Leading Industrial Motion Controllers Sub-Nanometer Resolution with
- Actuation Type: Electrical
- Drive Specifications: Lead Screw/ACME Screw
- Material: Aluminum, Other
- Motor Continuous Power: 0.0017 HP
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Supplier: PI (Physik Instrumente) L.P.
Description: . Lateral motion is based on the piezoelectric shear effect. Excellent dynamics with minimum electric power requirement. Versions with inner holes or for use in cryogenic and UHV environments up to 10-9 hPa Available options PZT ceramic material Non
- Blocked Force: 10 to 300 N
- Capacitance: 0.5000 to 230 nF
- Electrical Connectors: Other
- Length: 3.5 to 40 mm
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Supplier: OMEGA Engineering, Inc.
Description: , ±5%, 25°C (77°F): 100 mV/gAcceleration Range: 80 g peakAmplitude Non-Linearity: 1%Frequency Response: ±5%: 3 to 5000 Hz ±10%: 1 to 9000 Hz ±3 dB: 0.5 to 14,000 HzResonance Frequency: 30 kHzTransverse Sensitivity, Max: 5% of axialTemperature Response: -50°C (-58°F) =
- Acceleration: 80 g
- Device Type: Sensor / Transducer
- Features: Battery Powered, Corrosion Resistant, Sealed
- Frequency Range: 0.5000 to 14000 Hz
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Supplier: Materion Corporation
Description: Oxide, La2O3 Lead Titanate, PbTiO3 Lead Zirconate, PbZrO3 Lead Zirconate-Titanate, PZT Lithium Niobate, LiNbO3 Magnesium Oxide, MgO Molybdenum Oxide, MoO3 Niobium Pentoxide
- Materials Processed: Oxides
- Type: CVD / Chemical Precursor
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Supplier: Gelest, Inc.
Description: synthesis of BaTiO3 and SrTiO3.3 Catalyst for rearrangement4 and cleavage5 of epoxy alcohols. Catalyst for cyclization of ?-amino acids to lactams.6 In combination with lead alkyls yields PZT films by MOCVD.7 Review of reactions
- Boiling Point: 136 F
- Flash Point: 77 F
- Viscosity: 2 cps
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(PZT) ferroelectric thin films, sapphire substrates also shows a lower degree of disorientation between the crystallites compared to on Si substrate and ideal breakdown voltage. Sapphire substrates could be competent in the ferromagnetic thin film growth of Mn1−xS (e.g. (read more)
Browse Semiconducting Materials Datasheets for Hangzhou Shalom Electro-optics Technology Co., Ltd. -
candidates worth noticing to manufacture new functional electronics. When assigned to the sputter deposition of Pb(Zr,Ti)O3 (PZT) ferroelectric thin films, sapphire substrates show a lower degree of disorientation between the crystallites compared to on Si substrate and ideal breakdown voltage (read more)
Browse Semiconducting Materials Datasheets for Hangzhou Shalom Electro-optics Technology Co., Ltd.
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http://dspace.mit.edu/bitstream/handle/1721.1/9236/45503691-MIT.pdf?sequence=2
Specimen Manufacture Test specimens consisted of three substrates of0.19 mm thick lead-zirconate-titanate ( PZT ) 5H (PiezoSystems, Inc.).
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https://dspace.lib.cranfield.ac.uk/bitstream/1826/3480/1/Chung_Thesis_2008.pdf
PZT 5H .
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Dynamic Fracture of Piezoelectric Materials
Fig. 9.2 Normalized SIF-I for different type of load and different electrical boundary conditions: a PZT 5H ; b PZT 4; c BaTi O3 .
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Piezoelectrics based on a hybrid of piezoelectric matrix nano- and microcomposites
EXPERIMENT The objects of investigation are 0–3 matrix com posites consisting of tetragonal PZT 5H ceramics, thermoplastic high density polyethylene (HDPE) with a melt flow index of 1.3 q/10 min (a load of 2 kg, 190°C), and SiO2 as an insulator.
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Poling Conditions of Pre-Stressed Piezoelectric Actuators and Their Displacement
In this paper, two different thicknesses of commercial PZT 5A and PZT 5H materials were used in bulk actuators and pre-stressed benders realised by new method.
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Very high frequency (beyond 100 MHz) PZT kerfless linear arrays
PZT 5H sheet, on the other hand, has greater sensitivity, because of its much higher coupling coefficient of the PZT-5H (kt = 0.55) than the PZT film’s (kt = 0.34).
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Manufacturing of prestressed piezoelectric unimorphs using a postfired biasing layer
Prestressed PZT 5A and PZT 5H unimorphs with piezo material thickness of 250 .
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Piezoelectric and Acoustic Materials for Transducer Applications
Parameter Quartz BaTiO3 PbTiO3 : Sm PZT 5H .
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Development of novel piezoelectric ceramics and composites for transducer applications
PZT 5H fibers made by the Viscous Suspension Spinning Process (VSSP) is a cost-effective method for producing large quantities of continuous PZT fibers7.
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Domain switching criteria for piezoelectric materials
Table 1 Material Properties of PZT 5H (Fang and Li, 1999 .