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Supplier: AR Modular RF
Description: The Model KMW1060 is an RF power amplifier module for OEM applications or integration into a user system. The module comprises a printed wiring assembly housed in a machined aluminum enclosure with feed-through capacitive terminals for connection to the DC
- Operating Frequency: 1 to 512 MHz
- Operating Temperature: 60 C
- Supply Voltage: 28 volts
- Supply Current: 4,000 mA
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Supplier: Richardson RFPD
Description: The 1213 is suitable for HF broadband and specific high power linear applications. This amplifier utilizes the latest push-pull LDMOS power devices that provide high gain, wide dynamic range, low distortions, and good linearity. The amplifier utilizes a device specific
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors.
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Supplier: Skyworks Solutions, Inc.
Description: Multimode Multiband Power Amplifier Module
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Richardson RFPD
Description: The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifier in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifier provides 15 dB of gain, 3 to 4 dB noise figure and +24 dBm of saturated output
- Frequency Range: 10 to 20,000 MHz
- Maximum Gain: 15 dB
- Output Power( P1dB): 22 dBm
- Noise Figure: 3 dB
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Supplier: Richardson RFPD
Description: The MAMF-011142 is a surface mount E-band transmitter. The module operates from 71 - 86 GHz and is designed to be used in direct conversion or heterodyne applications. The RF output is a WR12 interface. The module provides 30 dB small signal gain and a saturated output
- Noise Figure: 16 dB
- Features: Other
- Applications: Terrestrial RF/Microwave Systems
- Converter Type: Upconverter
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Supplier: Skyworks Solutions, Inc.
Description: SkyLiTE™ Multimode Multiband Power Amplifier Module
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Microchip Technology, Inc.
Description: amplifier module when you may find our line-up of high performance MMIC amplifier modules are an ideal selection for laboratory and instrumentation systems where a high performance broadband RF power amplifier is required. Examples use cases include a
- Features: Other
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Supplier: Broadcom Inc.
Description: The Avago MGA-43828 is a fully matched, highly linear power amplifier (PA) designed for use in the 925-960 MHz band. Based on Avago’s proprietary 0.25um GaAs E-pHEMT technology, the device features high linearity, gain and power-added efficiency (PAE) with integrated
- Frequency Range: 925 to 960 MHz
- Maximum Gain: 33 dB
- Output Power( P1dB): 26.999999999999996 dBm
- Applications: Mobile / Wireless Systems
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Supplier: Broadcom Inc.
Description: The Avago MGA-43013 is a fully matched power amplifier (PA) for use in the 728-756 MHz band. Based on Avago’s proprietary 0.25um GaAs E-pHEMT technology, the device features high linearity, gain and power added efficiency (PAE) with built-in power detector. The MGA-43013
- Frequency Range: 728 to 756 MHz
- Minimum Gain: 31 dB
- Maximum Gain: 33.5 dB
- Output Power( P1dB): 26.999999999999996 dBm
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Supplier: Broadcom Inc.
Description: The Avago MGA-43024 is a fully matched power amplifier (PA) for use in the WLAN 2401-2473 MHz band. Based on Avago’s proprietary 0.25um GaAs E-pHEMT technology, the device features high linearity, gain and power added efficiency (PAE) with built-in power detector. The
- Frequency Range: 2,401 to 2,473 MHz
- Minimum Gain: 40.5 dB
- Maximum Gain: 40.5 dB
- Output Power( P1dB): 27.999999999999996 dBm
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Supplier: Radwell International
Description: POWER AMPLIFIER MODULE, 800 MHZ, 100 WATTS. FREE 2 YEAR RADWELL WARRANTY
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Supplier: AR Modular RF
Description: The Model KAW2020 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232 Interface
- Frequency Range: 200 to 500 MHz
- Minimum Gain: 50 dB
- Output Power( P1dB): 50 dBm
- Gain Flatness: 2 dB
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Supplier: Qorvo
Description: The Qorvo® QM75041 is a highly integrated Sub-6GHz PAMiD compliant to 5G-NR standards focused on Best-in-class 5G performance and ease-of-use (EOU) for platforms targeting advanced RF, including flagship/premium smartphones and data devices. The module consists of a High Band PA,
- Amplifier Type: Power Amplifier
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Supplier: Broadcom Inc.
Description: The ACPM-9205 is a fully matched 10-pin surface mount Power Amplifier Module developed for CDMA BC0 and meets stringent linearity power up to CDMA2K 26.5dBm. The 2 mm × 2.5 mm form-factor package is self contained, and it incorporates 50-ohm input and output matching
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Supplier: Qorvo
Description: The RFCM3328 is a Power Doubler amplifier SMD Module. The part employs GaAs pHEMT die and GaN HEMT die, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss performance with low noise and optimal
- Frequency Range: 45 to 1,218 MHz
- Minimum Gain: 25 dB
- Maximum Gain: 25 dB
- Noise Figure: 2.5 dB
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Supplier: Qorvo
Description: Qorvo's QPM1021 is a packaged, high power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process. The QPM1021 operates from 10 – 12 GHz and provides 100 W (50 dBm) of saturated output power with 20 dB of large signal gain and greater than 32 % power–added
- Open-Loop Gain (AVOL): 20 dB
- Supply Voltage (VS): 28 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Richardson RFPD
Description: The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output
- Frequency Range: 18,000 to 44,000 MHz
- Maximum Gain: 21.5 dB
- Output Power( P1dB): 31 dBm
- Minimum Operating Voltage: 5 volts
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Supplier: Qorvo
Description: Qorvo's QPM2239 is a packaged, high-power Ku-band amplifier module, fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 13 - 15.5 GHz, the QPM2239 provides 80 W of saturated output power and 29 dB of small-signal gain while achieving > 25%
- Open-Loop Gain (AVOL): 29 dB
- Supply Voltage (VS): 28 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: DigiKey
Description: RF Amplifier IC ISM Module
- Minimum Gain: 38 dB
- Maximum Gain: 38 dB
- Output Power( P1dB): 53.01029995663981 dBm
- Package Type: Connectorized
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Supplier: MACOM
Description: At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold
- Power Gain: 7 to 8 dB
- Operating Frequency: 2,700 to 3,500 MHz
- Output Power: 130 to 300 watts
- Features: Bipolar RF Transistors, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC Rf Module Front End Product overview: RF9820 from RF Micro Devices is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,
- Features: Other
- Standards: RoHS Compliant
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Supplier: ValueTronics International, Inc.
Description: The 8348A is a 26.5 GHz RF Amplifier from HP Agilent. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Up to 25 dBm output power Reduced
- Frequency Range: 26,500 MHz
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12A01A L- & S-Band Power Amplifier is a small, highly efficient solid-state power amplifier module that provides 4 watts of linear RF power to boost performance of data links and transmitters. Based on the latest gallium nitride (GaN)
- Frequency Range: 1,000 to 2,500 MHz
- Minimum Gain: 40 dB
- Maximum Gain: 40 dB
- Output Power( P1dB): 36.020599913279625 dBm
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Supplier: Acme Chip Technology Co., Limited
Description: AIRFAST POWER AMPLIFIER MODULE
- Features: Other
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Description: AIRFAST POWER AMPLIFIER MODULE
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: QUAD BAND POWER AMPLIFIER MODULE WITH INTERGRATED POWER CONTROL Product overview: AWT6146 from Anadigics is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers
- Features: Other
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Supplier: Marki Microwave LLC
Description: The ADM3-0022PA has the gain and output power to produce 1W of output power from a +0 dBm input power up to 22 GHz. It contains 3 broadband amplifier stages in series in a single package with built-in equalization to provide a flat gain and output power curve. This
- Frequency Range: 0 to 22,000 MHz
- Package Type: Connectorized
- Features: Other
- Amplifier Type: Power Amplifier
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Supplier: ODG (Origin Data Global)
Description: WIDE BAND LOW POWER AMPLIFIER
- Technology: Bluetooth, GPS, GSM, UMTS
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Integrated Circuits (ICs)>Linear>Amplifiers>Video Amps and Modules Package: 292-LBGA Product Status: Active Resistance (Ohms): 8.2k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: RF Amplifier IC Cellular, ISM, SMR
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: applications. The amplifier provides a 15 dB of gain with a rising slope, 3.5 dB noise figure, and 27 dBm of output power at 3 dB gain compression with the nominal bias of 235 mA from a 10 V supply. Output IP3 is typically 35 dBm. The MMA052AA amplifier is DC coupled and
- Features: Other
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Supplier: Marki Microwave LLC
Description: The ADM3-0022PA has the gain and output power to produce 1W of output power from a +0 dBm input power up to 22 GHz. It contains 3 broadband amplifier stages in series in a single package with built-in equalization to provide a flat gain and output power curve. This
- Frequency Range: 0 to 22,000 MHz
- Package Type: Connectorized
- Features: Other
- Amplifier Type: Power Amplifier
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experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Multi-purpose broadband noise module Noise modules deliver high output power, flat response and wideband coverage from 1 MHz to 18 GHz for jamming, optical power combining and calibration (read more)
Browse RF Amplifiers Datasheets for kTB Solutions -
The Qorvo® QPF4557 is an integrated front end module (FEM) designed for Wi-Fi 7 (802.11be) systems. The small form factor and integrated matching minimizes layout area in the application. Performance is focused on optimizing the PA for a 5V supply voltage that minimizes power (read more)
Browse RF Modules Datasheets for Qorvo -
). A coupler with RF output is integrated for DPD feedback training. For power control a broadrange, constant slope voltage logarithmic power detector is provided for application feedback. The QPF4609E integrates a 6 GHz power amplifier (PA), single pole two throw switch (SP2T), coupler structure and bypassable low noise amplifier (LNA) into a single device. (read more)
Browse RF Modules Datasheets for Qorvo -
harmonics as well as 2.4 GHz rejection for DBDC operation are included. A coupler with RF output as well as a broadrange, constant slope voltage logarithmic power detector is provided for application feedback. The QPF4657 integrates a 6-7 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable low noise amplifier (LNA) into a single device. (read more)
Browse RF Modules Datasheets for Qorvo -
control a broadrange, constant slope voltage logarithmic power detector is provided for application feedback. The module includes a state to turn on and off, which could reduce bill of material or give an option to reduce current draw. The QPF4202 integrates a 2.4 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable low noise amplifier (LNA) into a single device. (read more)
Browse RF Modules Datasheets for Qorvo -
provided to ensure high throughput is maintained across a covered distance. A coupler with RF output as well as a broadrange, constant slope voltage logarithmic power detector is provided for application feedback. The QPF4702 integrates a 5 - 7 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable multi-mode low noise amplifier (LNA) into a single device. (read more)
Browse RF Modules Datasheets for Qorvo -
WVA-71863HP+ Connectorized WR12, Medium Power, Linear Amplifier, 71 GHz to 86 GHz, 50Ω Mini-Circuits' WVA-71863HP+ is a medium power high gain amplifier, covering 71 to 86 GHz with WR12 waveguide intefaces. The model operates over a (read more)
Browse RF Amplifiers Datasheets for Mini-Circuits
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
a product development alliance with Xemod Inc., a supplier of RF power amplifier components for the wireless and networking industries. As part of the plan, Cree-a supplier of semiconductor materials and devices based
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Indicates content that may require registration and/or purchase.
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Development of a Solid State Radio Transmitter with MOS/FET
an RF oscillator/driver, 4 RF power amplifier modules , .
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2.7 - 3.1 GHz, 1.5 kW Pulsed Solid-State Power Amplifier with Automatic Gain Equalization Circuit for Radar Application
Each RF power amplifier module has a series 8-cascaded power .
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Characterization of transfer molding effects on RF performance of power amplifier module
D. Cavasin, K. Brice-Heames, A. Arab, “Improvements in the Reliability and Manufachuability of an Integrated RF Power Amplifier Module System-In-Package, via Implementation of Conductive Epoxy Adhesive for Selected SMT Components,”The proceeding of the 53rd Electronic Components and Technology …
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Agilent Technologies Unveils ADS 2012 Software
• Multichip module electromagnetic (EM) simulation setup and Finite Element Method simulation of different technologies to analyze EM interactions between ICs and interconnects, wire bond and flip-chip solder bumps in typical multichip RF power amplifier modules .
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2013 Combined Subject Index IEEE Industry Applications Society Publications
Huber, Jonas, +, APEC Mar. 2013 1413-1420 100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules .
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Reliable Design of Electronic Equipment
For example, the trends in the ripple voltage of power supply units and the DC supply current of RF Power Amplifier modules could be monitored during environmental tests.
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ISTFA 2013: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis
RF Power Amplifier Modules (PAMs) utilizing GaAs power amplifier (PA) die are becoming more complex, as they are optimized for these different frequencies and different markets.
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http://www.microsemi.com/document-portal/doc_download/14798-analog-mixed-signal-new-product-guide
Microsemi’s family of RF power amplifier modules .
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7.3.07 -- Feature Article: Improving GPS Signal Performance In Mobile Handsets
20 To 1000 MHz RF Power Amplifier Module .
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3.2.06 -- Feature Article: RF Wafer Testing: An Acute Need, And Now Practical
20 To 1000 MHz RF Power Amplifier Module .