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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for Efficiency Optimization ■ Depletion Mode Device - Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under
- Power Gain: 22 dB
- Output Power: 160 watts
- Operating Frequency: 420 to 450 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Renesas Electronics Corporation
Description: The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention
- Polarity: NPN
- Features: Other
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Supplier: Accuris
Description: Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
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Supplier: Accuris
Description: The Measurement of Small-Signal VHF-UHF Transistor Admittance Parameters
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Supplier: Accuris
Description: Measurement of Small-Signal VHF-UHF Transistor Short-Circuit Forward Current Transfer Ratio
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Supplier: Newark, An Avnet Company
Description: UHF POWER TRANSISTOR, NPN, 9.5V, 500MA, SOT223, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:9.5V; Transition Frequency:900MHz; Power Dissipation:2W; Continuous Collector Current:500mA; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
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Supplier: Accuris
Description: Measurement of Small Signal HF, VHF, and UHF Power Gain of Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: Allied Electronics, Inc.
Description: JFET-N-CH UHF/VHF AMP
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Supplier: Allied Electronics, Inc.
Description: TO-92 Package Type, 12 V Collector to Emitter Voltage, Silicon NPN Transistor
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, SC-43, 3 PIN, FET RF Small Signal
- Transistor Type: JFET
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF SSFP
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF MCP
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: TRANS NPN BIPO VHF-UHF MCP4
- Polarity: NPN
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN VHF/UHF AM
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: VHF/UHF NPN SILICON TRANSISTOR
- IC(max): 50 milliamps
- VCEO: 15 volts
- Operating Frequency: 600 MHz
- Output Power: 0.225 watts
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Supplier: Radwell International
Description: TRANSISTOR BJT NPN VHF/UHF AM TO-39. FREE 2 YEAR RADWELL WARRANTY
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Supplier: RS Components, Ltd.
Description: NPN VHF/UHF Transistor SOT-23
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS) Product overview: 2SC3120 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general
- Transistor Type: Bipolar RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH09120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied
- Power Gain: 21 dB
- Output Power: 120 watts
- Operating Frequency: 2,500 MHz
- Transistor Type: HEMT
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Description: UHF/VHF MIXER NPN TRANSISTOR
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Richardson RFPD
Description: CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output match which allows for the agility to apply to a wide range of frequencies from
- Power Gain: 16.5 dB
- Output Power: 14 watts
- Operating Frequency: 0 to 2,700 MHz
- Features: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply
- Features: Other, Tape Reel
- Package Type: SOT23
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed avionics transistor part number IB0607S1000 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse conditions at VCC=50V, this common base device supplies a minimum of 1000 watts of peak pulse power. It
- Power Gain: 9.3 dB
- Operating Frequency: 653 to 687 MHz
- Output Power: 1,000 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise,
- Noise Figure: 2.4 dB
- Polarity: NPN
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: TRANS NPN VHF/UHF SS 25V TO92
- Transistor Type: General Purpose BJT
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over
- Noise Figure: 2.1 dB
- Polarity: NPN
- Features: Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: RF POWER TRANSISTORS FOR UHF
- Transistor Type: Darlington
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Supplier: Rochester Electronics
Description: UHF power MOS transistor
- Features: Other, Tape Reel
- Transistor Type: Power MOSFET
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Supplier: Lingto Electronic Limited
Description: UHF WIDEBAND TRANSISTOR
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Supplier: Quarktwin Technology Ltd.
Description: UHF WIDEBAND TRANSISTOR
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Supplier: ODG (Origin Data Global)
Description: BLF1046 - UHF POWER LDMOS TRANSI
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV14500 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 – 1.4-GHz L-Band radar-amplifier applications. The transistor could
- Power Gain: 16 dB
- Output Power: 530 watts
- Operating Frequency: 500 to 1,800 MHz
- Transistor Type: HEMT
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Heteromagnetic Microelectronics
The equivalent circuit of Gummel–Poon’s model of the bipolar UHF transistor is presented in Fig. 5.1, where the basic notation [39–41] is retained.
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1997 Combined Index
Nishijima, M., + , MWSYM 97 1155-1158 vol.3 UHF technology; cf. UHF circuits; UHF devices; UHF frequency conversion; UHF measurements; UHF modulation UHF transistors ; cf. UHF bipolar transistors; UHF FETs UHF transmitters DECT, open loop archit., bipolar transmitter IC.
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Ultralinear UHF power transistors for CATV applications
In ordertoobtain improved linearity performanceof UHF transistors for CATV applications one should thus eliminatecurrent density and temperaturegradients across the active chip area.
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Subject Index
UHF transistors ; cf. UHF bipolar transistors; UHF field effect transistors UHF tubes .
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Motorola MMBFJ310 Series Datasheets. MMBFJ310, MMBT404, MMBT918, MMBFJ310LT1, MMBT404A, MMBFJ309LT1 Datasheet.
NPN silicon VHF/ UHF transistor . in 3-pin 318-02 package.
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Subject Index, Jun. 1981
’using GaAs MESF Ts; Niclas, Karl 1 .; T-MTT v28 n3 Mar 80172-179 UHF transistor amplifier design using large-signal scattering parameters: I-G Hz, 18-W amplifier; ~ighlon, .
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1997 Index
Shaeffer, D.K., + , J-SC May 97 745-759 UHF transistors ; cf. UHF bipolar transistors UHF transmitters Si-bipolar variable attenuator for PHS transmitter, 1.9-GHz.
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1996 Combined Index IEEE Transactions on Microwave Theory and Techniques, Vol. 44, and IEEE MTT-S Sponsored Conferences
UHF technology; cf. UHF circuits; UHF frequencyconversion; UHF meas- urements; UHF modulatioddemodulation UHF transistors ; cf. UHF bipolartransistors;UHF FETs UHF transmitters .
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Subject Index
Lu, S.-S., + , T-MTT Feb 01 333-340 Transistors; cf. Bipolar transistors; Field effect transistors; Microwave transistors; UHF transistors Transition metal alloys; cf. Iron alloys; Nickel alloys Transition metal compounds; cf. Scandium compounds; Yttrium compounds Transition metals; cf. Copper; Niobium Transit …
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Amorphous-Si emitter heterojunction UHF power transistors for handy transmitter
Schematic drawing of a one-emitter heterojunction UHF transistor .