Products/Services for Bfr90 Equivalent Transistors
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Transistors - (919 companies)Transistors are small, versatile semiconductor devices designed to switch or amplify electronic signals and power. Almost all electronic devices today contain one or more transistors. Some transistors are individually packaged, but many more...Transistor TypePolarityPackage Type -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
RF Transistors - (315 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices... -
Bipolar RF Transistors - (186 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters... -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
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Small-Signal Bipolar Transistors (BJT) - (158 companies)Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Small signal bipolar junction...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
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Unijunction Transistors (UJT) - (20 companies)Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Unijunction Transistors (UJTs) Information. Unijunction transistors (UJTs) are three-terminal devices that have only one PN junction. When...
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Programmable Unijunction Transistors (PUT) - (23 companies)Programmable uni-junction transistors (PUT) are three-terminal thyristors that are triggered into conduction when the voltage at the anode exceeds the voltage at the gate. The PUT is similar to the UJT, but its intrinsic standoff ratio can be set...
Product News
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RIFTEK EUROPE Sp. z.o.o.
Equivalent conicity calculation program Equivalent Conicity is a parameter that is used when investigating dynamic interaction between railways vehicle and track. The parameter describes behavior of contact between wheels and rails for straight and large radius parts of track. The program calculates the next parameters: contact points position;. rolling radiuses difference depending on displacement of wheel set;. contact angles and their difference depending on displacement of wheel set;. equivalent conicity. The program can use data... (read more)Browse Engineering Analysis Software Datasheets for RIFTEK EUROPE Sp. z.o.o. -
ODG (Origin Data Global)
Complete Guide to CR1225 Battery Equivalents . Substituting batteries from different manufacturers can be challenging. Here is the ultimate cross-reference guide for CR1225 batteries: Brand. Model Code. Capacity (mAh). Duracell. DL1225. 60-65. Energizer. ECR1225. 60-65. Panasonic. BR1225. 55-60. Maxell. LM1225. 50-55. Kodak. KCR1225. 48-52. Cross References by Manufacturer for Their Models/SpecificationsSeiko/Citizen Watch Codes: 280-208 (Timex Equivalent). L30 (International Standard). Some glucose meters indicate their compatibility with "CR1225... (read more)Browse Batteries Datasheets for ODG (Origin Data Global) -
ODG (Origin Data Global)
AG13 Battery Equivalent: Ultimate Guide to Power Ever wondered why that new gadget stops working way too soon? Or why some small devices just refuse to hold a charge? The answer often lies with the tiny power source inside. Choosing the right AG13 battery equivalent means the difference between consistent performance and constant frustration. Don't let your devices fall flat. We help you cut through the confusion and find the perfect match. We'll show you how to identify the right battery, understand different chemistries, and make smart... (read more)Browse Batteries Datasheets for ODG (Origin Data Global) -
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® America Corp.
Sarcon® TIM Cases for Cooler Transistors In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly (R) offers a large assortment of box-shaped Sarcon (R) thermal interface caps. These cases are available in standard sizes to fit many transistors and can be custom ordered to your exact specifications. Installation takes seconds by sliding over the heat-generating component. Once fitted, unwanted heat is dissipated to the surrounding environment or nearby heatsinks. Depending on the power and cooling... (read more)Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
LIXINC Electronics Co., Limited
Microchip 2N2907AUB PNP Bipolar Transistor The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to meet the needs of engineers working on a wide range of designs. Its compact 3-SMD package makes it well-suited for space-constrained environments, providing engineers with an easy-to-integrate solution for both low and medium-power... (read more) -
LIXINC Electronics Co., Limited
2N2907AUB High-Current PNP Transistor The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities... (read more) -
Rochester Electronics
Authorized Source: IGBT, MOSFETs, Transistors All of Rochester 's in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, onsemi, Renesas, and many more. Additionally, we stock a large selection of power management, diodes, and protection devices that are commonly used within these same designs. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Win Source Electronics
ULN2803ADWR Darlington Transistor Array IC The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a wide range of loads from microcontroller or logic-level signals. It offers robust performance with built-in suppression diodes for inductive load protection, making it ideal for applications like industrial control systems, automotive electronics... (read more)Browse Transistors Datasheets for Win Source Electronics
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ng-edge
In addition, we have qualified P-channel equivalents in 100V and 200V versions. .... F /291 TO-18 Microsemi has a huge selection of radhard Bipolar Junction Transistors (BJTs) qualified in .... BFR90 .
