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Supplier: ODG (Origin Data Global)
Description: BLF278 - VHF PUSH-PULL POWER VDM
- Power Gain: 18 dB
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
- Package Type: SOT26
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Supplier: Rochester Electronics
Description: BLF278 - VHF Push-Pull Power VDMOS Transistor
- Features: Other
- Transistor Type: Power MOSFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1026849-BLF278C Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 125 V Current - Test: 200 mA Gain: 18dB Transistor Type: 2 N-Channel (Dual) Common Source Voltage - Test: 50 V
- Output Power: 300 watts
- Power Gain: 18 dB
- Transistor Type: MOSFET, MOSFET RF Transistors
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF MOSFET Transistors RF Transistor Product overview: BLF278 from Advanced Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful
- Transistor Type: MOSFET
- Polarity: N-Channel
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF MOSFET 50V CDFM4 Product overview: BLF278C from Rochester Electronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- Transistor Type: MOSFET
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153698-BLF404 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
- Transistor Type: Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153668-BLF147 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
- Transistor Type: Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153693-BLF346 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
- Transistor Type: Power MOSFET
- Package Type: SOT3
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: HF/VHF POWER VDMOS TRANSISTOR ( / RF Transistor Product overview: BLF177C from Ampleon USA Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for
- Transistor Type: Bipolar RF Transistors
- Features: Other
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Supplier: DigiKey
Description: TRANSISTOR RF LDMOS SOT979A
- Features: Other
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Description: RF MOSFET
- Features: Bulk Pack, Other
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET LDMOS 50V SOT539B
- Transistor Type: MOSFET
- Features: Other
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Supplier: Utmel Electronic Limited
Description: RF MOSFET LDMOS DUAL 50V SOT539B
- V(BR)DSS: 104 volts
- Number of Transistors in the Chip: 2
- Output Power: 250 watts
- Power Gain: 21 dB
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Supplier: Newark, An Avnet Company
Description: MOSFET, P-CH, -30V, -27.8A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-27.8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: RF FET LDMOS 110V 20.8DB SOT539B
- Power Gain: 20.8 dB
- Output Power: 250 watts
- Features: Other, Tape Reel
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Supplier: Radwell International
Description: (PRICE/TC) MOSFET, P-CH, -30V, -27.8A, SOIC; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-27.8A; DRAIN SOURCE VOLTAGE VDS:-30V; ON RESISTANCE RDS(ON):0.0041OHM; RDS(ON) TEST VOLTAGE VGS:-10V; THRESHOLD VOLTAGE VGS:-2.2V; POWER ROHS COMPLIAN. FREE 2 YEAR RADWELL WARRANTY
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 10.8A 132mΩ@3.8A,10V 27.8W 2.6V@250uA P Channel PowerPAK1212-8 MOSFETs ROHS
- V(BR)DSS: 100 volts
- VGS(off): 2.6 volts
- rDS(on): 0.132 ohms
- PD: 27,800 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-channel 600 V, 0.278 Ohm typ., 9 A MDmesh M2 Power MOSFET in PowerFLAT 5x6 HV package
- Transistor Type: MOSFET
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
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perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
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Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
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Novel 90/spl deg/ power-coupling concept based on broadside-coupled coplanar transmission lines for new VHF power transmitter family
Power amplification in the VHF frequency range between 87.5 and 108 MHz strongly relies on bipolar junction transistors such as the Philips BLF278 , the MotorolaMaCom MRFISIG, or the SD2932 f?om … These butterfly devices can deliver around 300W of RF power .
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RF Power Amplifiers
Figures 2-28 through 2-45 show typical data sheet characteristics of an RF power transistor . .... Figures 2-28 through 2-33 provide the parameters of the BLF278 MOSFET for Class B operation…
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http://www.nxp.com/documents/data_sheet/BLF278.pdf
VHF push-pull power MOS transistor . .... BLF278 . .... Class-AB operation RF performance in CW operation in a common source push-pull test circuit.
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Highest power LDMOS S-band transistor in the world - YouTube
• F5MAG BLF278 NXP 1 KW SSPA POWER AMPLIFIER ALL BAND 160M A 6M BAND - Duration: 7:13. darknessninja13 8,872 views. .... • HFR-20W RF TRANSISTOR POWER TEST (2SC1969/2SC2312, SUB) - Duration: 4:21. weazle66 27,259 views .
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RF transmitting transistor and
power amplifier fundamentals Power amplifier design
RF transmitting transistor and power amplifier fundamentals Power amplifier design ferrite are 4B and 4C. .... this method can be found in the 108 MHz test circuit of the BLF278 (see “Data Handbook…
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Development of A Solid State RF Amplifier in the KW Regime for Application with Low Beta Superconducting Rf Cavities
The power transistor and power terminator are directly bonded to these boxes. .... The housing is equipped with two N-type RF connectors and DC feed- through with RF filters. .... on the 50 V dual silicon N-channel enhancement mode vertical D-MOS transistor Philips BLF278 [4].
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RFマニュアル第14版
BLF278 . .... http://www.nxp.com/products/mosfets/ rf _ power _ transistors _ldmos/microwave_ldmos/index.html#preview .
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The 101 MHz amplifier system of the new CERN Lead Injector
…400 kW amplifiers installed at CERN while table 1 gives data at full power operation at BERTRONIX. .... The 400 kW amplifiers consist of three rf -stages. .... The predriver, a 400 W transistor amplifier, uses the Valvo transistors BLF278 .
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CR4 - Thread: Can I Replace MRF151G by BLF278?
Re: Can I Replace MRF151G by BLF278 ? .... Previous in Forum: Flickering in Power System. .... You might be interested in: RF MOSFET Transistors , Power MOSFET, RF Isolators and RF Circulators .
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CR4 - Thread: Can I replaced MRF377H by MRF377 ?
BLF系列（BLF861A、 BLF278 、BLF245、BLF242、BLF147、BLF177、BLF1046， BLF246B， BLF378，BLF546，BLF***）. .... You might be interested in: RF MOSFET Transistors , Power MOSFET, RF Isolators and RF Circulators .