-
Supplier: ODG (Origin Data Global)
Description: BLF278 - VHF PUSH-PULL POWER VDM
- Package Type: SOT26, Other
- Power Gain: 18 dB
- Transistor Type: MOSFET RF Transistors
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1026849-BLF278C Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 125 V Current - Test: 200 mA Gain: 18dB Transistor Type: 2 N-Channel (Dual) Common Source
- Package Type: SOT3
- Polarity: N-Channel
- Transistor Type: MOSFET, MOSFET RF Transistors
-
Supplier: ODG (Origin Data Global)
Description: BLF1046 - UHF POWER LDMOS TRANSI
- Transistor Type: MOSFET RF Transistors
-
-
Supplier: ODG (Origin Data Global)
Description: BLF177 - HF/VHF POWER VDMOS TRAN
- Package Type: Other
- Power Gain: 19 dB
- Transistor Type: MOSFET RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153688-BLF244 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
- Package Type: SOT3
- Transistor Type: Power MOSFET
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153668-BLF147 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
- Package Type: SOT3
- Transistor Type: Power MOSFET
-
Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1153693-BLF346 Manufacturer Homepage: www.nxp.com Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
- Package Type: SOT3
- Transistor Type: Power MOSFET
-
Supplier: ODG (Origin Data Global)
Description: BLF404 - UHF POWER VDMOS TRANSIS
- Operating Frequency: 500 MHz
- Package Type: Other
- Polarity: N-Channel, Other
- Power Gain: 11.5 dB
-
Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: Power MOSFET
-
Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
- Package Type: Other
- Packing Method: Other
- Polarity: N-Channel
-
Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
- Package Type: Other
- Packing Method: Other
- Polarity: N-Channel
-
Supplier: Richardson RFPD
Description: The GTRB384608FC-V1 is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications. Featuring an Asymmetric Doherty Design, the GTRB384608FC-V1 provides 47.5dB Avg, 56.4 dBm peak power in 5G band
- Operating Frequency: 3300 to 3800 MHz
- Output Power: 56 watts
- Package Type: Other
Find Suppliers by Category Top
Featured Products Top
-
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
perform optimally in customer-specific circuits and improve your production yields. Also, several RF and DC power circuits can be improved if the transistors are DC matched for specific characteristics. Let Richardson RFPD perform this testing for you, and ensure you are only purchasing product that will work in your system (read more)
Browse RF Transistors Datasheets for Richardson RFPD -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
RIAA phono stages: tube and transistor designs Switching power supply design and manufacture Automated PCV assembly including surface mount and through-hole components Manual assembly and soldering with trained and certified operators (read more)
Browse Audio Transformers Datasheets for Triad Magnetics
More Information Top
-
Novel 90/spl deg/ power-coupling concept based on broadside-coupled coplanar transmission lines for new VHF power transmitter family
Power amplification in the VHF frequency range between 87.5 and 108 MHz strongly relies on bipolar junction transistors such as the Philips BLF278 , the MotorolaMaCom MRFISIG, or the SD2932 f?om … These butterfly devices can deliver around 300W of RF power .
-
RF Power Amplifiers
Figures 2-28 through 2-45 show typical data sheet characteristics of an RF power transistor . .... Figures 2-28 through 2-33 provide the parameters of the BLF278 MOSFET for Class B operation…
-
http://www.nxp.com/documents/data_sheet/BLF278.pdf
VHF push-pull power MOS transistor . .... BLF278 . .... Class-AB operation RF performance in CW operation in a common source push-pull test circuit.
-
Highest power LDMOS S-band transistor in the world - YouTube
• F5MAG BLF278 NXP 1 KW SSPA POWER AMPLIFIER ALL BAND 160M A 6M BAND - Duration: 7:13. darknessninja13 8,872 views. .... • HFR-20W RF TRANSISTOR POWER TEST (2SC1969/2SC2312, SUB) - Duration: 4:21. weazle66 27,259 views .
-
RF transmitting transistor and
power amplifier fundamentals Power amplifier design
RF transmitting transistor and power amplifier fundamentals Power amplifier design ferrite are 4B and 4C. .... this method can be found in the 108 MHz test circuit of the BLF278 (see “Data Handbook…
-
Development of A Solid State RF Amplifier in the KW Regime for Application with Low Beta Superconducting Rf Cavities
The power transistor and power terminator are directly bonded to these boxes. .... The housing is equipped with two N-type RF connectors and DC feed- through with RF filters. .... on the 50 V dual silicon N-channel enhancement mode vertical D-MOS transistor Philips BLF278 [4].
-
RFマニュアル第14版
BLF278 . .... http://www.nxp.com/products/mosfets/ rf _ power _ transistors _ldmos/microwave_ldmos/index.html#preview .
-
The 101 MHz amplifier system of the new CERN Lead Injector
…400 kW amplifiers installed at CERN while table 1 gives data at full power operation at BERTRONIX. .... The 400 kW amplifiers consist of three rf -stages. .... The predriver, a 400 W transistor amplifier, uses the Valvo transistors BLF278 .
-
CR4 - Thread: Can I Replace MRF151G by BLF278?
Re: Can I Replace MRF151G by BLF278 ? .... Previous in Forum: Flickering in Power System. .... You might be interested in: RF MOSFET Transistors , Power MOSFET, RF Isolators and RF Circulators .
-
CR4 - Thread: Can I replaced MRF377H by MRF377 ?
BLF系列(BLF861A、 BLF278 、BLF245、BLF242、BLF147、BLF177、BLF1046, BLF246B, BLF378,BLF546,BLF***). .... You might be interested in: RF MOSFET Transistors , Power MOSFET, RF Isolators and RF Circulators .
Indicates content that may require registration and/or purchase.