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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs,
- PD: 40,000 milliwatts
- TJ: -55 to 150 C
- Transistor Type: MOSFET
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 50V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 33A, MOSFET
- PD: 75 milliwatts
- Features: Enhancement, Other
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, TO 220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, TO 220, MOSFET Transistor,
- Transistor Type: MOSFET
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 50V, 0.07ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching,
- PD: 75,000 milliwatts
- TJ: -65 C
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- V(BR)DSS: 800 volts
- IDSS: 11,000 milliamps
- rDS(on): 0.95 ohms
- PD: 150,000 milliwatts
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 117589-BUZ11_NR4941 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min
- V(BR)DSS: 50 volts
- PD: 75,000 milliwatts
- TJ: -55 to 150 C
- Transistor Type: MOSFET
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET N-CH 50V 33A 3-Pin(3+Tab) TO-220
- V(BR)DSS: 50 volts
- IDSS: 33,000 milliamps
- PD: 90,000 milliwatts
- TJ: 175 C
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 201660-BUZ10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V
- V(BR)DSS: 50 volts
- PD: 75,000 milliwatts
- TJ: 175 C
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET N-Channel 50V 33A
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 865048-BUZ73A H Series: SIPMOS® Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3 Package: Tube Package: TO-220-3 Mounting: Through Hole Part Status: Obsolete
- TJ: -55 to 150 C
- Transistor Type: MOSFET
- Polarity: N-Channel
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 109401-BUZ73A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V
- V(BR)DSS: 200 volts
- PD: 40,000 milliwatts
- TJ: -55 to 150 C
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL 600V 11A TO263
- V(BR)DSS: 600 volts
- PD: 124,000 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
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Description: N-CHANNEL POWER MOSFET
- Features: Bulk Pack, Other
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: MOSFET N-CH 50V 30A TO220-3
- V(BR)DSS: 50 volts
- IDSS: 30,000 milliamps
- PD: 75,000 milliwatts
- TJ: -55 to 150 C
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Supplier: DigiKey
Description: N-Channel 50V 30A (Tc) 75W (Tc) Through Hole TO-220-3
- Polarity: N-Channel
- Features: Other
- Package Type: TO-220
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Supplier: Acme Chip Technology Co., Limited
Description: 400V, N-CHANNEL POWER MOSFET
- Features: Bulk Pack, Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications 48 V intermediate bus converter (IBC) Smart speaker designs Designers who used this product also designed with BSZ070N08LS5 | N-Channel Power MOSFET CYW4373 | Wi-Fi 5 (802.11ac)
- rDS(on): 0.0012 to 0.003 ohms
- TJ: -55 to 150 C
- VGS(off): 1.2 to 2 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very fast switching Small and
- Features: Enhancement, Other
- Transistor Type: MOSFET
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Supplier: Newark, An Avnet Company
Description: MOSFET, N-CHANNEL 250 V DPAK TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.1342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
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Supplier: New Yorker Electronics Co., Inc.
Description: MOSFET, N-Ch, Single, 11.5A, 650V, TO-220F
- V(BR)DSS: 650 volts
- IDSS: 11,500 milliamps
- Transistor Type: MOSFET
- Polarity: N-Channel
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Transistors - Mosfet, N Channel, 650V, 11A, D2Pak; Transistor Polarity Stmicroelectronics -- 33R1098Supplier: Newark, An Avnet Company
Description: MOSFET, N CHANNEL, 650V, 11A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.5A; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 40V, 11A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 60V, 11A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: Automotive N-Channel 50 V (D-S) 175 °C MOSFET
- rDS(on): 0.011 ohms
- PD: 75,000 milliwatts
- TJ: -55 to 175 C
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Side wettable flanks for optical solder
- V(BR)DSS: 60 volts
- IDSS: 720 milliamps
- VGS(off): 1.7 volts
- rDS(on): 0.85 ohms
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD
- V(BR)DSS: 20 volts
- IDSS: 3,200 milliamps
- VGS(off): 0.65 volts
- rDS(on): 0.068 ohms
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Supplier: Rochester Electronics
Description: 400V, N-Channel Power MOSFET
- Transistor Type: MOSFET, Power MOSFET
- Polarity: N-Channel
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Single N-Channel Power MOSFET 30V 36A 11mΩ, DPAK INSERTION MOUNT, 75-TUBE
- Transistor Type: MOSFET, Power MOSFET
- Polarity: N-Channel
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 1.2kV 17A 208mΩ@18V,5A 103W 5.6V@2.5mA N Channel TO-247AC-3 MOSFETs ROHS
- V(BR)DSS: 1,200 volts
- VGS(off): 5.6 volts
- rDS(on): 0.208 ohms
- PD: 103,000 milliwatts
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Supplier: RS Components, Ltd.
Description: MOSFET N-Channel 100V 11.2A SOIC8
- Transistor Type: MOSFET
- Polarity: N-Channel
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: HS8K11 is standard MOSFET for switching application.
- V(BR)DSS: 30 volts
- IDSS: 7,000 milliamps
- QG: 5.699999999999999 nC
- PD: 2,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: HS8K11 is standard MOSFET for switching application.
- V(BR)DSS: 30 volts
- IDSS: 7,000 milliamps
- QG: 5.699999999999999 nC
- PD: 2,000 milliwatts
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Nexperia today announced the release of single and dual small-signal MOSFETs in miniature DFN packages. The automotive qualified devices are available in DFN1110D-3 and DFN1412-6 respectively. Particularly the DFN1110D-3 (1.1mm x 1 (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
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The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Toshiba’s SSM10N954L is a 12 V common-drain N-channel MOSFET designed for battery protection circuits used for Lithium-ion (Li-ion) battery packs for mobile devices and other equipment. Li-ion battery packs use highly robust protection-circuits to enhance safety (read more)
Browse Batteries Datasheets for DigiKey -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
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The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
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Measurement system for thermal drift of propagation time in fast pulse circuits
BUZ11 30A, 50V, 0.040 Ohm, N - Channel Power MOSFET . S. R. Hofstein, G. Warfield, “Carrier mobility and current saturation in the MOS transistor ,” IEEE Trans.
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Page 1. Semiconductor parts with 494 in root number
High-Voltage, High-Current Darlington Transistor Arrays BUZ11 _R4941 30A, 50V, 0.040Ohm, N - Channel Power MOSFET .
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Research and Education in Robotics - EUROBOT 2009
One of the suitable choices is BUZ11 [9]. The driving circuit for the power mosfets was chosen based on the following criterions: that it has a shutdown function (to be used for a current limiting), that it can drive high side N - channel mosfets and that the propagation delays are … The time that corresponds to switching on the optocoupler output transistor is shorter.