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Supplier: Qorvo
Description: Qorvo’s QPA0506 is a MMIC power amplifier fabricated using Qorvo’s QGaN25 0.25 um GaN on SiC production process. Covering 5 – 6 GHz, the QPA0506 typically provides 36 dBm of saturated output power and 18 dB of large-signal gain while achieving 53 % power added efficiency.
- Open-Loop Gain (AVOL): 18 dB
- Supply Voltage (VS): 25 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Xicom Technology, Inc.
Description: The XTK-3000C and XTK-3000C2 are compact Klystron Power Amplifiers KPAs) designed for fixed and mobile uplink applications. Xicom KPAs are ½ the height of conventional KPAs. Reduced height is complimented by reduced weight. Shipping is greatly simplified as the RF deck, klystron
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Supplier: NuWaves Ltd.
Description: The NuPower™ 11C01A Multi-Octave Power Amplifier (MOPA) utilizes GaN technology to deliver 15 watts of RF power for CW and near-constant-envelope waveforms from 225 MHz to 2.4 GHz, covering VHF, UHF, L-band and S-band frequencies. Based on the latest Gallium
- Frequency Range: 225 to 2,400 MHz
- Minimum Gain: 40 dB
- Maximum Gain: 40 dB
- Output Power( P1dB): 41.76091259055681 dBm
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5079 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium
- Frequency Range: 4,400 to 4,900 MHz
- Maximum Gain: 48 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Qorvo
Description: Qorvo's TGA2701-SM is a packaged 35 dBm power amplifier for C band applications. The TGA2701-SM provides a nominal 35 dBm of output power at an input power level of 22 dBm with a small signal gain of 18 dB. Nominal TOI is 42 dBm and noise figure is 7.5 dB.
- Frequency Range: 5,900 to 8,500 MHz
- Minimum Gain: 18 dB
- Maximum Gain: 18 dB
- Minimum Operating Voltage: 6 volts
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Supplier: Richardson RFPD
Description: The CHA4252-QKB is a three-stage Medium Power Amplifier in the 17.2 to 21.3GHz frequency band. This MPA typically provides 25dBm output power associated to 30% of Power Added Efficiency. The circuit exhibits a small signal gain of 30dB. The overall power
- Frequency Range: 17,200 to 21,300 MHz
- Maximum Gain: 30 dB
- Minimum Operating Voltage: 14 volts
- Maximum Operating Voltage: 14 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5080 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium
- Frequency Range: 4,400 to 4,900 MHz
- Maximum Gain: 48 dB
- Output Intercept Point (IP3): 44 dBm
- Maximum Operating Voltage: 32 volts
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Supplier: Richardson RFPD
Description: consideration, but not guaranteed. This amplifier is suitable for broadband mobile jamming and band specific high power applications in the S and C frequency bands. This compact module utilizes the latest high power RF GaN transistors and also
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Supplier: Qorvo
Description: Qorvo's CMD249P5 is wideband GaAs MMIC distributed power amplifier housed in a leadless 5x5 mm plastic surface mount package. The amplifier delivers 12.5 dB of gain with a corresponding output 1 dB compression point of +28 dBm and an output IP3 of 39 dBm at 10 GHz. The CMD249P5
- Open-Loop Gain (AVOL): 12.5 dB
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
- Standards and Certifications: RoHS Compliant
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Supplier: Richardson RFPD
Description: The PHA2731-190M is a Class C microwave power amplifier module specifically designed for S-Band radar pulsed power applications where high efficiency and saturated power are required. The module incorporates two in-phase combined common base hybrid
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Supplier: Qorvo
Description: Qorvo's CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a corresponding output 1 dB compression point of +34.5 dBm and a saturated output power of +36.5 dBm. The CMD184
- Open-Loop Gain (AVOL): 13 dB
- Supply Voltage (VS): -2.8 to 28 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Frequency Range: 26,000 to 28,000 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Output Power( P1dB): 37.5 dBm
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched design which
- Frequency Range: 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 30 dBm
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Supplier: Broadcom Inc.
Description: The ACPM-7800 is a multi-mode power amplifier module for both GMSK and 8-psk modulation schemes and UMTS/LTE band. There are two amplifier chains, one is to support GSM850/900 bands, and the other is to support DCS1800/PCS1900 bands. Features Quad
- Frequency Range: 824,000 to 849,000 MHz
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Supplier: APITech
Description: ‘A,’ ‘AB,’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating multi-band
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Supplier: DigiKey
Description: 5-6 GHZ, 4W C-BAND MMIC, OVM
- Frequency Range: 5,000 to 6,000 MHz
- Minimum Gain: 27.4 dB
- Maximum Gain: 27.4 dB
- Minimum Operating Voltage: 25 volts
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Supplier: Richardson RFPD
Description: The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier
- Frequency Range: 26,500 to 31,000 MHz
- Maximum Gain: 25 dB
- Features: Other
- Amplifier Type: Power Amplifier
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Supplier: Custom MMIC
Description: The CMD278C4 is a broadband MMIC GaN low noise amplifier housed in a leadless 4x4 mm QFN package. The CMD278C4 is ideally suited for microwave radios and X-band applications where small size and high input power survivability are needed. The broadband device delivers 15 dB of
- Frequency Range: 8,000 to 12,000 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Output Power( P1dB): 27.999999999999996 dBm
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Supplier: Custom MMIC
Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5 dB
- Frequency Range: 18 to 40 MHz
- Minimum Gain: 17 dB
- Maximum Gain: 17 dB
- Output Power( P1dB): 7.999999999999998 dBm
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Supplier: Fairview Microwave Inc.
Description: amplifiers for broadband applications have both general and high gain versions. RF power amplifiers are available in both medium power and high power amplification levels. Our low noise RF amplifiers / LNA amplifiers have superior noise
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NARROW BAND HIGH POWER AMPLIFIER Product overview: ARA1400S12C from Anadigics is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Amplifier 5-6 GHz, 4W C-Band MMIC, OVM Product overview: QPA0506 from Qorvo is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing
- Supply Voltage (VS): 25 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Wide Band Low Power Amplifier, 0MHz Min, 4000MHz Max, 1 Func, BIPolar, GREEN, SMT, TO-243C, SOT-89, 3 PIN Product overview: AG503-89G from Qorvo is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component
- Operating Temperature: -40 C
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Amplifier 2-6 GHz (S, C Band) Ultra LNA Product overview: CMD283 from Qorvo is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing
- Features: Other
- Standards: RoHS Compliant
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Supplier: Mini-Circuits
Description: The RFS-G90G93750X+ is a new generation solid state connectorized high-power signal source module which can be used in a wide range of industrial, scientific, and medical applications in the 902-928 MHz ISM band. The RFS-G90G93750X+ is a fully programmable, versatile, and
- Frequency Range: 902 to 928 MHz
- Minimum Gain: 1 dB
- Maximum Gain: 59 dB
- Input VSWR: 1.2 to 1.35 :1
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Supplier: Mini-Circuits
Description: The ZHL-2G08G0030+ is a Class C, solid-state connectorized high-power amplifier module which can be used in a wide range of broadband test applications from 2 to 8 GHz band. This rugged amplifier is capable of amplifying CW signals with 20W minimum saturated output
- Frequency Range: 2,000 to 8,000 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 52 dB
- Noise Figure: 10 dB
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Supplier: Mini-Circuits
Description: The ZHL-2G018G010+ is a Class AB, solid-state connectorized high-power amplifier module which can be used in a wide range of broadband test applications from 2 to 18 GHz band. This amplifier is capable of amplifying CW signals with 10W minimum saturated output
- Frequency Range: 2,000 to 18,000 MHz
- Minimum Gain: 40 dB
- Maximum Gain: 48 dB
- Noise Figure: 10 dB
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Supplier: Crescend Technologies, LLC
Description: Crescends low band line of amplifiers is designed for public safety and commercial two-way radio bands. They are available in outputs of 100W and 250W and inputs ranging from 2-20W. All of our amplifiers are designed for simple installation, maintenance and ease of
- Frequency Range: 30 to 50 MHz
- Output Power( P1dB): 50 dBm
- Minimum Operating Voltage: 13.8 volts
- Operating Temperature: -30 to 60 C
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Supplier: Empower RF Systems
Description: No Description Provided
- Frequency Range: 3,100 to 3,500 MHz
- Minimum Gain: 60 dB
- Maximum Gain: 60 dB
- Output Power( P1dB): 60 dBm
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Supplier: ValueTronics International, Inc.
Description: The SA-607F2 is an Amplifier from NF Corporation. An amplifier is a type of electronic test equipment that amplifies radiofrequency (RF) and microwave signals using the antenna. Amplifiers are ideal when used for electromagnetic interference (EMI) testing, cell phones,
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Supplier: ValueTronics International, Inc.
Description: Engineers use RF signal generators as test equipment, mostly to measure responses of filters, amplifiers, and electrical components. Additional Features: Frequency Range: 0.01 to 20 GHz Output power without an attenuator: –15 dBm (–20 dBm typical) Output power with an
- Minimum Frequency Range: 20,000 MHz
- Maximum Frequency Range: 20,000 MHz
- Device Type: Generator
- Generator Type: Signal, Sweep
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Supplier: Radar Technology, Incorporated
Description: Video Excellent Pulse Response General Specifications Linearity±1.0 dB (add ±0.5 dB over Temperature) (-30°C to +71°C) (add ±0.5 dB over Bandwidth) Sensitivity25mV/dB (typ) Source Impedance50 Ohms Video Load Impedance93 Ohms Power Requirements± 15 VDC Optional Specifications
- Frequency Range: 300 MHz
- Minimum Gain: 70 dB
- Maximum Gain: 70 dB
- Nominal Impedance: 50 Ohms
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Supplier: Wolfspeed
Description: The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Wolfspeed's advanced LDMOS
- Power Gain: 19 dB
- Output Power: 250 watts
- Operating Frequency: 470 to 806 MHz
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent
- Power Gain: 25 dB
- Output Power: 12 watts
- Operating Frequency: 390 to 450 MHz
- Features: MOSFET, Other
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Supplier: Wolfspeed
Description: The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with
- Power Gain: 20.5 dB
- Output Power: 220 watts
- Operating Frequency: 1,805 to 1,990 MHz
- Features: MOSFET, Other
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Featured Products Top
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The CHA8612-QDB/20 is manufactured with a GaN-on-SiC process (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Temperature:-30 ~ +70? Dimension:120*75*28mm Application RF power amplifier protection. Digital, Satellite, Mobile Communication. Medical, Communication, Security. Military, Space and Commercial applications. (read more)
Browse RF Isolators and RF Circulators Datasheets for 5o.com
Conduct Research Top
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EE Times: A New Pony and a Workhorse: GaN for RF Applications
With so much focus on the 5G rollout, it seems to be the shiny new things in the radiofrequency (RF) space that catch my eye. This was certainly true of a recent announcement from Qorvo - the QPA2309 C-band power amplifier (PA) product.
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The radar altimeter and scatterometer of China's HY-2 satellite
C - band RF Power Amplifier .
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A Distributed Intelligence Automatic Test System for PATRIOT
The station provides the required RF power ( C - band sweep oscillator, microwave amplifier , microwave panel to control the RF signal, and frequency counter) to the element assembly.
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Design of a C-band relativistic extended interaction klystron with coaxial output cavity
Abstract: In order to overcome the disadvantages of conventional high frequency relativistic klystron amplifiers in power capability and RF conversion efficiency, a C - band relativistic extended interaction klystron amplifier with coaxial output cavity is designed with the aid of PIC code MAGIC.
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Coaxial Cables as Sources of Intermodulation Interference at Microwave Frequencies
Each of the power signal sources at L- and C-band frequencies (in conjunction with a traveling- wave-tube amplifier in the case of C - band ) provided a maxi- mum RF power (CW) of 20 W; the maximum CW power available at…
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Satellite Scenarios and Technology for the 1990's
For instance, the beam-forming network (BFN) used in current satellites with several dual-polarized shaped beams at C - band wastes more than half the RF - power between the transmitter amplifiers and the several hundred radiat- ing elements of the transmit antenna…
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3D micro-cooled HPA package for RADAR application
A. ELECTRICAL DESIGN The C band microwave power amplifier is realized by means of two slices, the RF slice and the DC slice.
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Orbital performance of communication satellite microwave power amplifiers (MPAs)
This was at C - band with comparable power amplifiers , e.g. 6-16W of RF output power and similar gains.
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Satellite Communication System and New Technologies
It is also utilized in solid state power amplifier which can currently replaces C - band TWTA up to a 10 watts RF power level.
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A consideration on the application of compressed video communication methods to intelligent vehicle/highway systems
- Packet Transmission and Switching - Fast Front End Processors(FEP) - Multiple Access Protocols - Protocol Standardization - Ku-band RF technology - Spread Spectrum in C - band - Forward Error Correction - Solid State Power Amplifier (SSPA) - High Power Antennas - Network Management Software .
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The SIR-C/X-SAR Synthetic Aperture Radar system
The SIR-C RF electronics excites the antenna distributed high power amplifiers with digital chirp signals at L- and C - band frequencies for both H- and V-polarizations.