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Supplier: Multiwave Photonics
Description: The Erbium-doped Fiber Amplifier (EDFAC band) is a general purpose optical amplifier for the C band. This single pump optical amplifier features over 17 dBm of saturated optical output power, together with a high small signal gain and low noise
- Amplifier Model: Modules
- Amplifier Type: EDFA
- Amplifier Wavelength: C-Band
- Noise Figure: Up to 5 dB
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Supplier: NuWaves Ltd.
Description: The NuPower™ 11C01A Multi-Octave Power Amplifier (MOPA) utilizes GaN technology to deliver 15 watts of RF power for CW and near-constant-envelo pe waveforms from 225 MHz to 2.4 GHz, covering VHF, UHF, L-band and S-band frequencies. Based on the latest
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 225 to 2400 MHz
- Maximum Gain: 40 dB
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Supplier: Qorvo
Description: Qorvo’s QPA0506 is a MMIC power amplifier fabricated using Qorvo’s QGaN25 0.25 um GaN on SiC production process. Covering 5 – 6 GHz, the QPA0506 typically provides 36 dBm of saturated output power and 18 dB of large-signal gain while achieving 53 % power added
- Device Type: Power Operational Amplifiers
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5
- Device Type: Power Operational Amplifiers
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's QPA2610 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.5 GHz, the QPA2610 provides > 2 W of saturated output power and 23 dB of large-signal gain while achieving an impressive
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 8500 to 10500 MHz
- Maximum Gain: 23 dB
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Supplier: Qorvo
Description: Qorvo's QPA2612 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2612 provides > 12 W of saturated output power and 23 dB of large-signal gain while achieving an impressive
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 8000 to 12000 MHz
- Maximum Gain: 23 dB
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Supplier: NuWaves Ltd.
Description: The NuPower™ 15D05A L- & S-Band Power Amplifier is a small, highly efficient, connectorized solid state power amplifier that delivers over 20 watts of RF power from 800 to 2500 MHz to extend the operational range of data links and transmitters. The
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 800 to 2500 MHz
- Maximum Gain: 44 dB
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Supplier: NuWaves Ltd.
Description: -constrained broadband RF telemetry, tactical communication systems, and electronic warfare systems. NuPower PAs feature over-voltage and protection and can operate over a wide temperature range of -40 °C to +85 °C (baseplate). Extend your operational communication range with
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: Xicom Technology, Inc.
Description: The XTK-3000C and XTK-3000C2 are compact Klystron Power Amplifiers KPAs) designed for fixed and mobile uplink applications. Xicom KPAs are ½ the height of conventional KPAs. Reduced height is complimented by reduced weight. Shipping is greatly simplified as the RF deck,
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5079 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium power
- Amplifier Type: Power Amplifier
- Frequency Range: 4400 to 4900 MHz
- Maximum Gain: 48 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Fairview Microwave Inc.
Description: RF power amplifier FMAM5080 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium power
- Amplifier Type: Power Amplifier
- Frequency Range: 4400 to 4900 MHz
- Maximum Gain: 48 dB
- Maximum Operating Voltage: 32 volts
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Supplier: Broadcom Inc.
Description: The ACPM-7800 is a multi-mode power amplifier module for both GMSK and 8-psk modulation schemes and UMTS/LTE band. There are two amplifier chains, one is to support GSM850/900 bands, and the other is to support DCS1800/PCS1900 bands. Features Quad
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 824000 to 849000 MHz
- Package Type: Surface Mount Technology (SMT)
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Supplier: Xicom Technology, Inc.
Description: The XTS-100C high power solid state power amplifiers are compact, fully integrated antenna-mount units designed for low cost operation and longevity. Intended for outdoor operation, the XTS-100C eliminates the need for a separate amplifier shelter. In
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Supplier: Xicom Technology, Inc.
Description: The XTS-50C high power solid state power amplifiers are compact, fully integrated antenna-mount units designed for low cost operation and longevity. Intended for outdoor operation, the XTS-50C eliminates the need for a separate amplifier shelter. In
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Supplier: Xicom Technology, Inc.
Description: The XTS-200C high power solid state power amplifiers are compact, fully integrated antenna-mount units designed for low cost operation and longevity. Intended for outdoor operation, the XTS-200C eliminates the need for a separate amplifier shelter. In
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Supplier: Broadcom Inc.
Description: The ACPM-7777 is a multiband, multi-mode power amplifier module for both GMSK and 8-psk modulation schemes and UMTS bands. A directional coupler is integrated for UMTS PAs, and the isolation port is terminated internally. This module is housed in a cost-effective, extremely
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 824000 to 849000 MHz
- Package Type: Surface Mount Technology (SMT)
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Supplier: Broadcom Inc.
Description: The ACPM-7620 is a multiband, multi-mode power amplifier module which support GMSK and 8-psk modulation schemes and UMTS/LTE bands. ACPM-7620 is designed to support both ET and APT operation. This module is housed in a cost-effective, extremely small and thin package
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 824000 to 849000 MHz
- Package Type: Surface Mount Technology (SMT)
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched design which
- Amplifier Type: Power Amplifier
- Frequency Range: 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: Multiwave Photonics
Description: The polarization maintaining (PM) EDFA is based on a dual stage configuration and performance is optimized for the wavelength range 1530 nm - 1570 nm. The optical amplifier features over +20 dBm of saturated optical output power (up to +23 dBm can be provided), low polarization
- Amplifier Model: Modules
- Amplifier Type: EDFA
- Amplifier Wavelength: C-Band
- Noise Figure: Up to 7.5 dB
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Supplier: Richardson RFPD
Description: The MAAP-011027 is a 2-stage, 8 W saturated C-band power amplifier in a 5 mm 20 lead PQFN package, allowing for easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in
- Amplifier Type: Power Amplifier
- Frequency Range: 5200 to 5900 MHz
- Maximum Gain: 20 dB
- Maximum Operating Voltage: 9 volts
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Supplier: Custom MMIC
Description: The CMD278C4 is a broadband MMIC GaN low noise amplifier housed in a leadless 4x4 mm QFN package. The CMD278C4 is ideally suited for microwave radios and X-band applications where small size and high input power survivability are needed. The broadband device
- Amplifier Type: Low Noise Amplifier
- Applications: Terrestrial RF/Microwave Systems, Other
- Frequency Range: 8000 to 12000 MHz
- MMIC Technology Required: Yes
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: Custom MMIC
Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5 dB
- Amplifier Type: Low Noise Amplifier
- Applications: Other
- Frequency Range: 18 to 40 MHz
- MMIC Technology Required: Yes
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Supplier: Richardson RFPD
Description: C Band High Power Amplifier GaAs Monolithic Microwave IC. CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of output power on the 5.2 to 6.0GHz
- Amplifier Type: Power Amplifier
- Frequency Range: 5200 to 6000 MHz
- Maximum Gain: 22 dB
- Maximum Operating Voltage: 8 volts
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Supplier: Richardson RFPD
Description: ICONICRF’s ICP1044P is a 3 stage MMIC power amplifier in a 6x6mm QFN package, fabricated using GaN on SiC technology. ICP1044P operates from 7.9-11GHz delivering 30W of output power, with a typical PAE of 38% across the band. ICP1044P is well suited to commercial
- Amplifier Type: Power Amplifier
- Frequency Range: 7900 to 11000 MHz
- Maximum Gain: 31 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Crescend Technologies, LLC
Description: Crescends low band line of amplifiers is designed for public safety and commercial two-way radio bands. They are available in outputs of 100W and 250W and inputs ranging from 2-20W. All of our amplifiers are designed for simple installation, maintenance and ease of
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 30 to 50 MHz
- Minimum Operating Voltage: 13.8 volts
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Supplier: Utmel Electronic Limited
Description: Wide Band Medium Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, GREEN, SOT-89, TO-243C, 3 PIN
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Supplier: Richardson RFPD
Description: The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier
- Amplifier Type: Power Amplifier
- Frequency Range: 26500 to 31000 MHz
- Maximum Gain: 25 dB
- Package Type: Other
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Supplier: Multiwave Photonics
Description: Low noise figure High saturated output power High power stability Integrated control electronics Robust OEM enclosure with integrated heat sink Benchtop instrument version available on request
- Amplifier Model: Benchtop
- Amplifier Type: EDFA
- Amplifier Wavelength: C-Band
- Connector: FC, Other
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Supplier: Wolfspeed
Description: silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-d rift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal performance.
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Supplier: APITech
Description: class ‘A,’ ‘AB,’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating
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Supplier: Empower RF Systems
Description: Solid-state Class C pulse design, Suitable for Pulse applications
- Amplifier Type: Power Amplifier
- Frequency Range: 3100 to 3500 MHz
- Input VSWR: 1.5 :1
- Maximum Gain: 60 dB
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Supplier: Acme Chip Technology Co., Limited
Description: NARROW BAND HIGH POWER AMPLIFIER
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Supplier: DigiKey
Description: 5-6 GHZ, 4W C-BAND MMIC, OVM
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 5000 to 6000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 27.4 dB
Find Suppliers by Category Top
Featured Products Top
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Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The CHA8612-QDB/20 is manufactured with a GaN-on-SiC process (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics
Conduct Research Top
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EE Times: A New Pony and a Workhorse: GaN for RF Applications
With so much focus on the 5G rollout, it seems to be the shiny new things in the radiofrequency (RF) space that catch my eye. This was certainly true of a recent announcement from Qorvo - the QPA2309 C-band power amplifier (PA) product.
More Information Top
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Spaceborne C-band Pulsed Solid State Power Amplifier
J. Dhar, S.K.Garg, R. K. Arora, S. S. Rana, Nonlinear Design of a C band Power Amplifier using EEHEMT Nonlinear Model, .
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HY-2A radar altimeter design and in flight preliminary results
The chirp signal generated by DDS is up-converted and multiplied to produce 13.58 GHz±160 MHz and 5.25 GHz±160 MHz signal, which provide the Ku band and C band power amplifier input.
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Nonlinear model based Power Amplifier
J. Dhar, S.K.Garg, R. K. Arora, S. S. Rana, Nonlinear Design ofa C band Power Amplifier using EEHEMT Nonlinear Model, .
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A new refractory self-aligned gate technology for GaAs microwave power FETs and MMICs
at C-band is excellent, and the very uniform and repro- ducible device parameters resulted in a first-iteration 2.5- W C band power amplifier meeting the design specifica- tion on the first lot of wafers processed.
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Methodology of built and verification of non-linear EEHEMT model for GaN HEMT transistor
J. Dhar, S. K. Garg, R. K. Arora, S. S. Rana, “Nonlinear design of a C band power amplifier using EEHEMT nonlinear model,” in Proc. of Int.
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Performance enhancement of pulsed solid state power amplifier using Drain Modulation over Gate Modulation
[5] J. Dhar, S.K.Garg, R. K. Arora, S. S. Rana “Nonlinear Design of a C band Power Amplifier using EEHEMT Nonlinear Model,” International Symposium on Signals, Circuits and Systems-2007, Iasi, Romania, IEEE proceeding -1-4244-0968-3/07, volume …
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Table of Contents
Nonlinear Design of a C band Power Amplifier using EEHEMT Nonlinear Model .
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Large-signal MESFET model and circuit simulation validation for microwave high-power amplification
An analytical nonlinear MESFET model combined two harmonic balance simulators is used to predict a C band power amplifier performance.
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A Fully Integrated Monolithic Local Oscillator for LMDS Radio Link Applications
[2] B. Davide, M. Pagani and A. Panzeri " Modular Low Cost, High efficiency, C Band Power Amplifiers for SDH radio", Proc. of 5th European Conf.
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A New Highly Linear MMIC Single Side-Band Converter for Digital Radio Links
Pagani and A.Panzeri: "Modular, Low Cost, High Efficiency, C Band Power Amplifiers for SDH Radio", Proc. of 5th European Conf. on Fixed Radio Systems and Networks, Bologna, Italy, May 1996 [2] S.A. Maas: " A GaAs MESFET Mixer with Very …