C Band Power Amplifiers

Description: Qorvo’s QPA0506 is a MMIC power amplifier fabricated using Qorvo’s QGaN25 0.25 um GaN on SiC production process. Covering 5 – 6 GHz, the QPA0506 typically provides 36 dBm of saturated output power and 18 dB of large-signal gain while achieving 53 % power added efficiency.

• Open-Loop Gain (A_VOL): 18 dB
• Supply Voltage (V_S): 25 volts
• Operating Range: Military
• Features: Other, Power Operational Amplifiers

Description: Qorvo's TGA2701-SM is a packaged 35 dBm power amplifier for C band applications. The TGA2701-SM provides a nominal 35 dBm of output power at an input power level of 22 dBm with a small signal gain of 18 dB. Nominal TOI is 42 dBm and noise figure is 7.5 dB.

• Frequency Range: 5,900 to 8,500 MHz
• Minimum Gain: 18 dB
• Maximum Gain: 18 dB
• Minimum Operating Voltage: 6 volts

Description: The NuPower™ 11C01A Multi-Octave Power Amplifier (MOPA) utilizes GaN technology to deliver 15 watts of RF power for CW and near-constant-envelope waveforms from 225 MHz to 2.4 GHz, covering VHF, UHF, L-band and S-band frequencies. Based on the latest Gallium

• Frequency Range: 225 to 2,400 MHz
• Minimum Gain: 40 dB
• Maximum Gain: 40 dB
• Output Power( P_1dB): 41.76091259055681 dBm

Description: The XTK-3000C and XTK-3000C2 are compact Klystron Power Amplifiers KPAs) designed for fixed and mobile uplink applications. Xicom KPAs are ½ the height of conventional KPAs. Reduced height is complimented by reduced weight. Shipping is greatly simplified as the RF deck, klystron tube,

Description: Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 %

• Open-Loop Gain (A_VOL): 27.9 dB
• Supply Voltage (V_S): 24 volts
• Operating Range: Military
• Features: Other, Power Operational Amplifiers

Description: Qorvo's QPA2611 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2611 provides > 5 W of saturated output power and 26 dB of large-signal gain while achieving an impressive 42%

• Frequency Range: 8,000 to 12,000 MHz
• Minimum Gain: 26 dB
• Maximum Gain: 26 dB
• Minimum Operating Voltage: 24 volts

Description: The ACPM-7800 is a multi-mode power amplifier module for both GMSK and 8-psk modulation schemes and UMTS/LTE band. There are two amplifier chains, one is to support GSM850/900 bands, and the other is to support DCS1800/PCS1900 bands. Features Quad

• Frequency Range: 824,000 to 849,000 MHz
• Applications: Mobile / Wireless Systems
• Amplifier Type: Power Amplifier
• RoHS Compliant: RoHS Compliant

Description: RF power amplifier FMAM5079 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium power

• Frequency Range: 4,400 to 4,900 MHz
• Maximum Gain: 48 dB
• Output Intercept Point (IP³): 44 dBm
• Maximum Operating Voltage: 32 volts

Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched design which

• Frequency Range: 20,000 MHz
• Minimum Gain: 13 dB
• Maximum Gain: 13 dB
• Output Power( P_1dB): 30 dBm

Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a

• Frequency Range: 26,000 to 28,000 MHz
• Minimum Gain: 26 dB
• Maximum Gain: 26 dB
• Output Power( P_1dB): 37.5 dBm

Description: The Erbium-doped Fiber Amplifier (EDFAC band) is a general purpose optical amplifier for the C band. This single pump optical amplifier features over 17 dBm of saturated optical output power, together with a high small signal gain and low noise

• Saturated Output Power: 17 dB
• Signal Gain: 25 dB
• Noise Figure: 5 dB
• Operating Temperature: 5 to 55 C

Description: ‘A,’ ‘AB,’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating multi-band

Description: C Band High Power Amplifier GaAs Monolithic Microwave IC. CHA8012-99F is a monolithic two-stage GaAs High Power Amplifier (HPA) designed for C band applications. The HPA provides typically 12W of output power on the 5.2 to 6.0GHz

• Frequency Range: 5,200 to 6,000 MHz
• Maximum Gain: 22 dB
• Minimum Operating Voltage: 8 volts
• Maximum Operating Voltage: 8 volts

Description: The BBM1C3FEL (SKU 1061) is suitable for high power ultra broadband and band specific linear applications. This amplifier utilizes push-pull MOSFET power devices that provide high gain, wide dynamic range, low distortions and good linearity. Exceptional performance, long

Description: RF power amplifier FMAM5080 from Fairview Microwave is just one amp of a large selection of in-stock radio frequency amplifiers specifically stocked to be highly available for quick shipment. Fairview RF power amplifier is a connectorized medium power

• Frequency Range: 4,400 to 4,900 MHz
• Maximum Gain: 48 dB
• Output Intercept Point (IP³): 44 dBm
• Maximum Operating Voltage: 32 volts

Description: The CHA8362-99F is a three stage High Power Amplifier operating between 26.5 and 31GHz and providing typically 25W of saturated output power associated to 30% of power added efficiency. The typical power supply is 25V/440mA (quiescent current). The amplifier

• Frequency Range: 26,500 to 31,000 MHz
• Maximum Gain: 25 dB
• Features: Other
• Amplifier Type: Power Amplifier

Description: Wide Band Medium Power Amplifier, 50MHz Min, 4000MHz Max, 1 Func, GREEN, SOT-89, TO-243C, 3 PIN

Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5 dB

• Frequency Range: 18 to 40 MHz
• Minimum Gain: 17 dB
• Maximum Gain: 17 dB
• Output Power( P_1dB): 7.999999999999998 dBm

Description: engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Dual. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current

• Features: Operational Amplifiers

Description: High power C-band MMIC for pulsed radar operation. The CMPA5259080S is a high power, two-stage MMIC housed in a QFN package. Operating at 40V and at 25°C case temperature the device achieves over 100W of pulsed output power. The device is designed primarily

Description: OQPSK offset Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier

Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which

• Frequency Range: 30,000 MHz
• Minimum Gain: 13 dB
• Maximum Gain: 13 dB
• Output Power( P_1dB): 26.999999999999996 dBm

Description: Crescends low band line of amplifiers is designed for public safety and commercial two-way radio bands. They are available in outputs of 100W and 250W and inputs ranging from 2-20W. All of our amplifiers are designed for simple installation, maintenance and ease of

• Frequency Range: 30 to 50 MHz
• Output Power( P_1dB): 50 dBm
• Minimum Operating Voltage: 13.8 volts
• Operating Temperature: -30 to 60 C

Description: For high efficiency over a wide range of pump powers at 980 nm, we offer these fibers for operation in the C-Band. Regular and reduced 80 µm cladding versions are available. The fibers are optimized for single- or multi-stage amplifiers at various power ranges,

• Wavelength: 980 nm
• Numerical Aperture: 0.25
• Operating Temperature: -40 to 85 C
• Fiber Type: Bare Fiber, Erbium Doped

Description: SINGLE SUPPLY VOLTAGE, HIGH SPEED, WIDE BAND, DUAL OPERATIONAL AMPLIFIERS Product overview: UPC4742C from NEC Corporation is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision control. It is useful for

• Features: Operational Amplifiers

Description: The polarization maintaining (PM) EDFA is based on a dual stage configuration and performance is optimized for the wavelength range 1530 nm - 1570 nm. The optical amplifier features over +20 dBm of saturated optical output power (up to +23 dBm can be provided), low polarization

• Saturated Output Power: 23 dB
• Signal Gain: 15 dB
• Noise Figure: 7.5 dB
• Operating Temperature: 5 to 55 C

Description: NARROW BAND HIGH POWER AMPLIFIER

Description: No Description Provided

• Frequency Range: 3,100 to 3,500 MHz
• Minimum Gain: 60 dB
• Maximum Gain: 60 dB
• Output Power( P_1dB): 60 dBm

Description: F-AMP-SM only requires a single +5 Volt DC power supply for operation. Compatible with Fiber Modulators MKS offers two compatible products to the fiber-optic modulators. The F-AMP-SM is a general purpose EDFA (erbium doped fiber amplifier) pre-amplifier module and can be used

Description: NARROW BAND HIGH POWER AMPLIFIER Product overview: ARA1400S12C from Anadigics is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets,

• Features: Other

Description: amplifiers for broadband applications have both general and high gain versions. RF power amplifiers are available in both medium power and high power amplification levels. Our low noise RF amplifiers / LNA amplifiers have superior noise figure numbers

Description: Isolation Amplifier, 1 Func, 200MHz Band Width, PDSO8, ROHS COMPLIANT, SOP-8 Product overview: ACPL-C790-500E from Broadcom is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision control. It is useful for

• Supply Voltage (V_S): 3 to 5.5 volts
• Bandwidth: 0.2 MHz
• Operating Temperature: -40 C
• Features: Operational Amplifiers, Other

Description: The ISL55210 is a very wide band, Fully Differential Amplifier (FDA) intended for high dynamic range ADC input interface applications. This voltage feedback FDA design includes an independent output common mode voltage control. Intended for very high dynamic range ADC interface

• Slew Rate (SR): 5,600 V/µs
• Supply Voltage (V_S): 3 to 4.2 volts
• Bandwidth: 2,200 MHz
• CMRR: 75 dB

Description: 5-6 GHZ, 4W C-BAND MMIC, OVM

• Frequency Range: 5,000 to 6,000 MHz
• Minimum Gain: 27.4 dB
• Maximum Gain: 27.4 dB
• Minimum Operating Voltage: 25 volts

Description: Corning's optical couplers are fused fiber branching devices that split off a portion of light to allow for optical monitoring and feedback. These devices are used extensively in fiber amplifier power control, and in transmission equipment for performance monitoring and feedback

• Number of Input Ports: 1 to 2
• Number of Output Ports: 2
• Insertion Loss: 0.15 to 21.5 dB
• Splitting Ratio: 1 to 99