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Supplier: Nexperia B.V.
Description: Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A) plastic package. Stabilized output current of between 15 uA and 50 mA by connection of an external resistor between pins 4 and 5. Features and benefits One chip integrated constant
- Transistor Grade / Operating Range: Automotive
- Features: Other
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Supplier: Hottinger Brüel & Kjær A/S
Description: connectors are mounted on the rear panel of the unit. The Dytran model 4110C contains highly regulated +24 VDC power supply coupled to adjustable constant current circuits. The constant current circuits consist of clamped-base PNP transistors with variable
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Supplier: Nexperia B.V.
Description: AEC-Q101 Applications Constant current LED driver Generic constant current source Automotive applications
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: AEC-Q101 Applications Constant current LED driver Generic constant current source Automotive applications
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: component count and board space High power dissipation of 750 mW Stabilized output current adjustable up to 65 mA when an external resistor is used Applications Constant current LED driver Generic constant current source Automotive applications
- Transistor Grade / Operating Range: Automotive
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191389-JAN2N3792 Series: Military, MIL-PRF-19500/379 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-3 Power - Max: 5W Transistor Type: PNP Family Name: 2N3792
- TJ: -65 to 200 C
- Power Gain: 30 dB
- Output Power: 5 watts
- Features: Bulk Pack, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1056435-DTA144TSATP Current Rating: -100 mA Mounting: SMD (SMT) Polarity: PNP Categories: RF Transistors(BJT) Case / Package: SC Popularity: Low
- TJ: -55 C
- Output Power: 0.3 watts
- Operating Frequency: 250 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1123674-2N2905 Packaging: Bulk Mounting Style: Through Hole Transistor Type: PNP Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Status: Obsolete Manufacturer Homepage: www.nxp.com Manufacturer
- Power Gain: 100 dB
- Output Power: 0.6 watts
- Features: Bulk Pack, Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 750mV @ 1A, 10A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3 (TO-204AA) Temperature
- IC(max): 30,000 milliamps
- TJ: -55 to 200 C
- Power Gain: 15 dB
- Output Power: 5 watts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6287 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level
- PD: 175,000 milliwatts
- TJ: -65 C
- Transistor Type: MOSFET
- Polarity: PNP
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Supplier: RS Components, Ltd.
Description: BJT,PNP,dual,matched,65V,100mA,SOT457
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
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Supplier: RS Components, Ltd.
Description: Trans Darlington PNP 100V 0.8A SOT23
- Number of Transistors in the Chip: 1
- Transistor Type: Darlington
- Features: Other
- Polarity: PNP
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Supplier: Rochester Electronics
Description: Bipolar Transistor, 60V, 4A, PNP
- Transistor Type: Bipolar RF Transistors
- Features: Other
- Polarity: PNP
- Package Type: TO-220
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing
- PD: 1,500 milliwatts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Features: Other
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, 300mA, 50V, 420-800hFE, SOT-23
- VCEO: 50 volts
- IC(max): 300 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- PD: 15,000 milliwatts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Features: Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 30V 6A 180MHz 1W Surface Mount HUML2020L3
- Features: Other
- Polarity: PNP
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications For AF input
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: PNP Silicon Digital Transistor Summary of Features Built in bias resistor (R1= 2.2 kΩ, R2= 10 kΩ) Pb-free (RoHS compliant) package Qualified according AEC Q101
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 150 MHz
- hfe: 70
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX53
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 100 volts
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6
- Transistor Grade / Operating Range: Military
- Polarity: NPN, PNP
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Fast Switching Transistor // SMBT3906S
- IC(max): 200 milliamps
- VCEO: 40 volts
- VCBO: 40 volts
- Transistor Type: Bipolar RF Transistors
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the
- hfe: 50 to 75
- VCEO: 36 volts
- VCBO: -36 to -40 volts
- IC(max): -10 to -20 milliamps
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT PNP 120V 25A 3-Pin(2+Tab) TO-3
- IC(max): 25,000 milliamps
- PD: 200,000 milliwatts
- TJ: 125 C
- Transistor Type: Darlington
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- hfe: 175
- VCEO: 60 volts
- VCBO: 60 volts
- IC(max): 600 milliamps
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR583D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier. It is a highly reliable product for automotive.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: Linear Systems
Description: The LS3550 Monolithic Dual and Single, PNP Transistor is a Higher Current Version of the MP350, MP 351, and MP352 Series. It is ideal for Small Signal Transistor, Super Beta Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS, TO-78 6L ROHS, SOIC
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: NXP PBHV9040XBipolar (BJT) Single Transistor, PNP, -400 V, 55 MHz, 1.5 W, -250 mA, 10
- Transistor Type: Bipolar RF Transistors, General Purpose BJT
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistor Audio Power Amplifier, PNP Transistor Type +150 °C maximum operating temperature Designed for use in high power, high fidelity audio frequency amplifier applications.
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: PNP
- Package Type: SOT23
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 100V 1000@4V,5A PNP 10A 125W TO-247 Darlington Transistors ROHS
- hfe: 1,000
- VCEO: 100 volts
- IC(max): 10,000 milliamps
- PD: 125,000 milliwatts
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Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, General Purpose, PNP, -60 V, 75 MHz, 800 mW, -2 A, 40 RoHS Compliant: Yes
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Supplier: ODG (Origin Data Global)
Description: RF TRANS PNP 12V 4GHZ SOT323-3
- IC(max): 50 milliamps
- VCEO: 12 volts
- Noise Figure: 2.4 dB
- Operating Frequency: 4,000 MHz
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- VCEO: -100 volts
- IC(max): -2,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
bandwidth product, ensuring efficient current amplification Transition Frequency (fT): 300MHz, indicating good high-frequency performance Complementary PNP Type: SMMBT3906LT3G, allowing for push-pull amplifier configurations Ro (read more)
Browse Thermistors Datasheets for Win Source Electronics -
Normally Open Output The XS118BLNAL2 has a three-wire NPN normally open output. When no target is detected, the output transistor remains off. When a suitable metallic object enters the sensing zone, the transistor switches on and sinks current toward the 0 (read more)
Browse Automotive Electrical Connectors Datasheets for ERSAELECTRONICS PTE. LTD.
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Test results of a diffraction grating beam combiner
This scheme is based on the subtraction of a current (by a switched NPN current sink) from a constant positive current source ( PNP transistor ).
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Photonic packet switch using semiconductor optical amplifier gates
Each drive circuit uses a differentialpair of pnp transistors to switch a constant current source to either the SOA or a dummy load.
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Miniature wireless recording and stimulation system for rodent behavioural testing
The current flow is held constant by a pnp– pnp transistor pair configured as a constant current source , and its magnitude is set by configuring a variable resistor.
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CD-4 IC'S for High-Quality Demodulators for 4-Channel Discs
Rather the fluctuation of the charging and discharging current into the timing capacitor of the PLL, where the lateral pnp transistors were used as the constant current sources of switches, was the main reason for excess noise.
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Electronics from the Ground Up: Learn by Hacking, Designing, and Inventing > Transistors, FETs, and Vacuum Tubes
Now let's construct a constant current source out of an NPN or PNP transistor using LEDs as voltage references.
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An Ultra Low Power 500MHz Dual Modulus Prescaler
A constant voltage source circuit consists of a pnp transistor current source and a multiple VBE generation NPN Transistor .
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The high speed ternary logic gates based on the multiple /spl beta/ transistors
"active feed means that the base current of the multiple p transistor is supplied by a constant current source which is formed by a lateral PNP transistor .
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A history of the continuously innovative analog integrated circuit
… Krabbe, and Molinari of Analog Devices Inc., developed the first monolithic Digi- tal to Analog Converter (DAC) that was designed using the replica biasing and constant - current -densi- ty operation of binary-weighted PNP bipolar transistor emitters for switched current sources [20].
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Experimental and numerical study of the emitter turn-off thyristor (ETO)
The upper PNP tran- sistor in the GTO is modeled as a current source because, during the current commutation stage, the anode current IA remains al- most constant and the PNP transistor operates in a deep satura- tion region.
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A 110 dB CMRR/PSRR/gain CMOS operational amplifier
Constant VSD of the input transistors M0 and M1 is defined by a voltage source V0 consisting of the current source I2, lateral PNP transistor Q2 and a low-Vth n-MOS transistor M2.