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Supplier: ValueTronics International, Inc.
Description: The LIN-120A is a new LISN from Com-Power. A line impedance stabilization network (LISN) device is something engineers use to test radiofrequency (RF) emission and susceptibility. During an electronic equipment test, engineers place the LISN device between an alternating current or
- Frequency Range: 30 MHz
- Output Current Rating: 50 amps
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Supplier: ValueTronics International, Inc.
Description: The LI-220C is a 30 MHz, 20 A LISN from Com-Power. A line impedance stabilization network (LISN) device is something engineers use to test radiofrequency (RF) emission and susceptibility. During an electronic equipment test, engineers place the LISN device between an alternating
- Frequency Range: 30 MHz
- Output Current Rating: 20 amps
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Supplier: ValueTronics International, Inc.
Description: The LI-550A is a new LISN from Com-Power. A line impedance stabilization network (LISN) device is something engineers use to test radiofrequency (RF) emission and susceptibility. During an electronic equipment test, engineers place the LISN device between an alternating current or
- Frequency Range: 108 MHz
- Output Current Rating: 50 amps
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Supplier: Integrated Device Technology
Description: The IDT F1178 dual channel device operates with a single 5 V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 3300 to 3800 MHz with High or Low Side Injection. IF frequencies from 20 to 550 MHz are supported. matching
- Operating Temperature: -40 to 85 C
- Package Type: Surface Mount Technology (SMT), Other
- RF Frequency Range: 3300 to 3800 MHz
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Supplier: Integrated Device Technology
Description: The IDT F1102 dual channel device operates with a single 5V supply. It is optimized for operation in a Multicarrier BaseStation Receiver for RF bands from 698 to 915 MHz with High or Low Side Injection. IF frequencies from 50 to 300 MHz are supported. The F1102 also supports the
- Operating Temperature: -40 to 85 C
- Package Type: Surface Mount Technology (SMT), Other
- RF Frequency Range: 400 to 1000 MHz
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Supplier: Microchip Technology, Inc.
Description: Temperature range: -20C to 70C Simple, UART interface Integrated crystal, internal voltage regulator, and matching circuitry Multiple I/O pins for control and status Frequency: 2.402 to 2.480 GHz Available in certified modules BM78 Receive Sensitivity: -90 dBm (Classic); -92 dBm (LE)
- Interface: I2C
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Supplier: Maxim Integrated
Description: The MAX4550/MAX4570 serial-interface, programmable, dual 4x2 audio/video crosspoint switches are ideal for multimedia applications. Each device contains two identical crosspoint switch arrays, each with four inputs and two outputs. To improve off-isolation, use the additional
- Max Ron: 80 ohms
- Package Type: SOIC, Other
- Pin Count: 28
- RoHS Compliant: Yes
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Supplier: Maxim Integrated
Description: -to-noise ratio (SNR) of typically 37dB with an input frequency of 125MHz, and an integral nonlinearity (INL) and differential nonlinearity (DNL) of ±0.25 LSB. The MAX107 analog input preamplifiers feature a 400MHz, -0.5dB, and a 1.5GHz, -3dB analog input bandwidth. Matching
- DNL: 0.2500 LSB
- IC Package Type: TQFP
- INL: 0.2000 LSB
- Input Voltage Range (Vpp): 3.3 to 5 volts
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Supplier: Maxim Integrated
Description: -to-noise ratio (SNR) of typically 37dB with an input frequency of 200MHz, and an integral nonlinearity (INL) and differential nonlinearity (DNL) of ±0.25 LSB. The MAX105 analog input preamplifiers feature a 400MHz, -0.5dB, and a 1.5GHz, -3dB analog input bandwidth. Matching
- DNL: 0.2500 LSB
- IC Package Type: TQFP
- INL: 0.2000 LSB
- Input Voltage Range (Vpp): 3.3 to 5 volts
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Supplier: Maxim Integrated
Description: The MAX9691/MAX9692/MAX9 693 are ultra-fast ECL comparators capable of very short propagation delays. Their design maintains the excellent DC matching characteristics normally found only in slower comparators. The MAX9691/MAX9692/MAX9 693 have differential inputs and
- Input Offset Voltage (VOS): Up to 6.5 millivolts
- Logic Output: ECL
- Operating Temperature: -40 to 85 C
- Package Type: PDIP, SOIC, Other
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Supplier: Analog Devices, Inc.
Description: Product Details The LT1112 dual and LT1114 quad op amps achieve a new standard in combining low cost and outstanding precision specifications. The performance of the selected prime grades matches or exceeds competitive devices. In the design of the LT1112/LT1114 however, particular
- Gain-Bandwidth Product (GBW): 0.7500 MHz
- Input Offset Voltage (VOS): 0.0600 millivolts
- Operating Temperature: -40 to 85 C
- Package Type: PDIP, SOIC
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Supplier: Analog Devices, Inc.
Description: Product Details The LT1112 dual and LT1114 quad op amps achieve a new standard in combining low cost and outstanding precision specifications. The performance of the selected prime grades matches or exceeds competitive devices. In the design of the LT1112/LT1114 however, particular
- Gain-Bandwidth Product (GBW): 0.7500 MHz
- Input Bias Current (IBIAS): 2.50E-4 µA
- Input Offset Voltage (VOS): 0.0200 millivolts
- Operating Temperature: 0.0 to 70 C
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Supplier: Analog Devices, Inc.
Description: Product Details The AD8332 is a dual channel ultralow noise, linear-in-dB, variable gain amplifier (VGA). Optimized for ultrasound systems, they are usable as a low noise variable gain element at frequencies up to 120 MHz. Included in each channel are an ultralow noise preamplifier
- Device Type: Variable Gain Amplifiers
- RoHS Compliant: Yes
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC1030LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having RMS values from -60 dBm to +10 dBm
- Frequency Range: 0.0 to 3900 MHz
- IC Package Type: QFN
- Operating Temperature: -40 to 85 C
- Pin Count: 32
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Supplier: Richardson RFPD
Description: The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless
- Operating Frequency: 2496 to 2690 MHz
- Output Power: 28 watts
- Package Type: Other
- Power Gain: 15 dB
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Supplier: Richardson RFPD
Description: The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with
- Operating Frequency: 1880 to 2025 MHz
- Output Power: 56 watts
- Package Type: Other
- Power Gain: 16 dB
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Supplier: Richardson RFPD
Description: The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric design for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. It features dual-path design, input and output matching, and a thermally-enhanced package with earless
- Package Type: Other
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Supplier: Richardson RFPD
Description: The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with
- Operating Frequency: 746 to 768 MHz
- Output Power: 79 watts
- Package Type: Other
- Power Gain: 17.25 dB
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Supplier: RFMW
Description: The BLM8G0710S-30PB(G) is a dual section, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as general purpose driver or small cell final in the frequency range from 700 MHz to 1000 MHz. Available in gull wing or
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Supplier: Wolfspeed
Description: The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual path design, input and output matching, high gain and a thermally enhanced
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: interface applications in laptops, tablets or conferencing devices. Summary of Features Ultra-low self-noise/ultra-hig h SNR 73dB(A) Very high sensitivity (-26 dBFS) Sealed Dual Membrane (SDM) technology with IP57 ingress protection at microphone level
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 73 dB
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Supplier: Wolfspeed
Description: The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: microphone level Acoustic overload point (AOP) of 122dBSPL Very tight part-to-part phase and sensitivity matching (± 1dB) Flat frequency response with a low LFRO (low frequency roll-off) of 30Hz Benefits Far-field and low volume audio pick
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 70 dB
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Supplier: Infineon Technologies AG
Description: IM69D127 is a digital high performance MEMS microphone based on Infineon’s new Sealed Dual Membrane MEMS technology which delivers high ingress protection (IP57) at a microphone level. Its small size of only 3.60 x 2.50 x 1.00 mm3 makes it a perfect match for compact audio devices,
- Features: Digital Microphone
- Operating / Polarization Voltage: 1.62 to 3.6 volts
- Signal to Noise Ratio: 69 dB
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Supplier: Infineon Technologies AG
Description: applications (170/70µA) Sealed Dual Membrane (SDM) technology with IP57 ingress protection at microphone level Ultra-high acoustic overload point (AOP) of 135dBSPL Very tight part-to-part phase and sensitivity matching (± 1dB) Flat frequency response with a low
- Operating / Polarization Voltage: 1.52 to 3 volts
- Signal to Noise Ratio: 70 dB
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Supplier: RFMW
Description: The SKY67110-396LF is high linearity GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, high compression point, very low noise figure, and
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Supplier: RFMW
Description: The SKY67110-396LF is high linearity GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, high compression point, very low noise figure, and
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Supplier: RFMW
Description: and 18 ma of bias current. The device can also be biased from 1.8 to 5V and will still achieve an OIP3 of 16 dBm, and 12 dBm OP1dB with only 5 mA of bias current from 3.3V supply. This LNA is ideal for use in battery powered wireless transceivers. The SKY67015-396LF operates in the
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: RS Components, Ltd.
Description: -on-Chips. Alternatively, the starter kit is available in our offer. RF Technology = RF Transceiver Kit Classification = Module Featured Device = EFR32FG Kit Name = Flex Gecko Frequency = 2.4 GHz, 434 MHz
- Category: Development Suite / Kit
- Ports: Wireless
- Supported System: RF
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Supplier: RS Components, Ltd.
Description: -on-Chips. Alternatively, the starter kit is available in our offer. RF Technology = RF Transceiver Kit Classification = Module Featured Device = EFR32FG Frequency = 2.4 GHz, 169 MHz Kit Name = Flex Gecko
- Category: Development Suite / Kit
- Ports: Wireless
- Supported System: RF
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Supplier: RS Components, Ltd.
Description: , the starter kit is available in our offer. RF Technology = RF Transceiver Kit Classification = Module Featured Device = EFR32FG Kit Name = Flex Gecko Frequency = 2.4 GHz, 490 MHz
- Category: Development Suite / Kit
- Ports: Wireless
- Supported System: RF
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Supplier: ValueTronics International, Inc.
Description: under test as a stimulus as they test the device, using pulses to confirm the equipment’s proper operation. Additional Features: Wide frequency range: 0.25 mHz-125 MHz Amplitude: 0.2 V-10 V into 50 ohms 10 V into 50 ohms Dual pulse outputs Dual pulse
- Device Type: Generator
- Generator Type: Pulse
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Supplier: RS Components, Ltd.
Description: The STEVAL-FKI433V1 evaluation board is based on the S2-LP sub-1GHz ultra-low power, low data-rate transceiver device suitable for ISM bands and Wireless M-Bus. The transceiver in this kit is tuned for the 430-470MHz frequency band. This STSW-S2LP-DK kit consists of two parts: the
- Category: Development Suite / Kit
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Supplier: Visual Sound, Inc.
Description: Panasonic The PT-DW8300 is a 9600 ANSI Lumens WXGA 3-Chip DLP Projector and features a compact body and high picture quality. Brightness & Picture Quality Compact Yet Bright Panasonic's original dual-lamp system, with its new 355-W lamp
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Supplier: TMP Pro Distribution
Description: ZED-24 has an incredibly advanced feature-set for a mixer at this level - it has 23 independent sources to the mix, 10 independent outputs, 4 aux sends, Configurable USB audio in/out makes it easy to capture stereo recordings, playback and effects, a unique dual stereo input capability and
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up to 40 MHz bandwidth on both receive and transmit. The new ADRV9002 dual RF transceiver is ideal for mission-critical communications, for both network and terminal equipment and fully capable for use time division duplexing and frequency division (read more)
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The ADF4377 is a high performance, ultralow jitter, dual output integer-N phased locked loop (PLL) with an integrated voltage controlled oscillator (VCO) ideally suited for data converter and mixed signal front end (MxFE) clock applications. The high performance PLL has a figure of merit of (read more)
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The ADRV9009-ZU11EG is highly customizable and offers wide bandwidth and tuning range for a broad range of applications. It contains 2x Wideband ADRV9009 Dual Transceivers and Quad-core ARM® Cortex™-A53 MPCore™. 4GB of DDR4 (with ECC) is dedicated to the Programming System and 2x (read more)
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Applications of laser-trimming for all-quartz package, surface acoustic wave devices
Fabricating sealed dual resonator devices with precisely matched frequencies on a routine basis requires the laser-trimming process.
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Laser-Induced Forward Transfer Of Metal Oxides To Trim The Frequency Of Surface Acoustic Wave Resonator Devices
As seen the dual resonator device had lower vibration sensitivity when the frequencies of the individual resonators are matched by the .
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3.36-/15.24-GHz concurrent dual-band oscillator for WiMAX/WLAN applications
The proposed dual-band concurrent oscillator has been designed by using two active devices , one each for the individual frequency , a single dual -band concurrent matching network and separate resonators for the individual frequency band.
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Dual Printed Antenna for Wi-Fi Applications
Devices designed to op- erate under these protocols require the use of compact dual - fre- quency antennas matching these specifications [1].
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Ion Energy Distribution Skew Control Using Phase-Locked Harmonic RF Bias Drive
In this dual -RF power supply scheme, the design of impedance matching devices is based on the frequency of the associated RF power supply and alleviates the coupling issue previously described for impedance matching with a RF power supply output consisting of…
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Ultra wide band saw correlators using dual orthogonal frequency coded transducers
The figure compares the experimentally measured dual OFC device frequency response with the coupling of modes (COM) model simulation and ideal matched filter responses.
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A compact dual-frequency transformer for frequency-dependent complex impedance load
The presented transformer simplifies the dual -band match problem of frequency - dependent complex impedance and is practical in designing the matching network for active devices .
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A Three-Section Dual-Band Transformer for Frequency-Dependent Complex Load Impedance
The presented transformer solves the dual -band match problem for frequency -dependent load and is practical in designing the matching network for amplifiers, antennas and other devices .
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Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
This involves a dual - band matching topology in order to match a 50-Ω load to two arbitrary complex impedances seen by the device at two desired frequencies of operation.
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Multiband RF Circuits and Techniques for Wireless Transmitters
This involves a dual -band matching topology, in order to match a 50 Ω load to two arbitrary complex impedances seen by the device at two desired frequencies of operation.