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Supplier: OSI Optoelectronics
Description: OSI Laser Diode, Inc.‘s (LDI) 1300 nm edge-emitting LEDs (light-emitting diodes) feature stable power and spectral characteristics over temperature. LDI’s MOCVD-grown InGaAsP devices are aligned to either a single mode or multimode optical fiber in a stable, 14-pin dual
- Forward Current: 150 milliamps
- Forward Voltage: 2 volts
- Lens Type: Flat Lens
- Optical Power Output: 0.0040 to 0.0800 milliwatts
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Supplier: DigiKey
Description: THE SINGLE-CHANNEL EDGE-EMITTING
- Laser Power: 65000 milliwatts
- Operating Current Range: 20000 milliamps
- Operating Voltage: 9 volts
- Wavelength Range: 907 nm
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Supplier: Broadcom Inc.
Description: The Avago TO299K is a hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm Fabry-Perot edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
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Supplier: Broadcom Inc.
Description: The Avago TO293K is an hermetic sealed TO can device with a photo diode for optical output monitoring using 1310nm single mode edge-emitting laser diode chip for use in uncooled applications up to 10.7Gb/sec. The laser is mounted into a TO header and hermetic sealed with a
- Laser Type: Laser Diodes
- Operating Temperature Range: -25 to 95 C
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Supplier: Broadcom Inc.
Description: The Avago TO293Bx is an hermetically sealed TO can device with integral photo diode for optical output monitoring using a 1310nm single mode edge-emitting laser diode chip family for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
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Supplier: Broadcom Inc.
Description: The Avago TO295J is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. The laser is mounted into a TO-56 header and hermetic sealed
- Laser Type: Laser Diodes
- Operating Temperature Range: -40 to 85 C
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Supplier: Axetris AG
Description: Axetris laser diode micro-lenses are optimized for efficient coupling to edge laser diodes (LDs) and vertical cavity surface emitting lasers (VCSELs). Applications range from optical communication to sensors. Features Applications
- Antireflection Coating: Yes
- Diameter / Length: 0.9400 mm
- Lens Application: Infrared
- Lens Type: Aspheric Lens
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Supplier: RS Components, Ltd.
Description: As Creeâ??s smallest lighting class LEDs, the XLamp XQ-D series offers high power and reliability within a footprint of just 1.6mm³. Instead of the light being emitted centrally, the XQ-D LEDâ??s light pattern directs the light to the edge of the device. This
- Color: White, Other
- Forward Voltage: 3.5 volts
- Optical Power Output: 2300 milliwatts
- Viewing Angle: 145 degrees
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Supplier: RS Components, Ltd.
Description: As Creeâ??s smallest lighting class LEDs, the XLamp XQ-D series offers high power and reliability within a footprint of just 1.6mm³. Instead of the light being emitted centrally, the XQ-D LEDâ??s light pattern directs the light to the edge of the device. This
- Color: White, Other
- Color Temperature: 6500 K
- Optical Power Output: 2300 milliwatts
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Supplier: RS Components, Ltd.
Description: As Creeâ??s smallest lighting class LEDs, the XLamp XQ-D series offers high power and reliability within a footprint of just 1.6mm³. Instead of the light being emitted centrally, the XQ-D LEDâ??s light pattern directs the light to the edge of the device. This
- Color: White, Other
- Forward Voltage: 3.5 volts
- Optical Power Output: 2300 milliwatts
- Viewing Angle: 145 degrees
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Supplier: RS Components, Ltd.
Description: As Creeâ??s smallest lighting class LEDs, the XLamp XQ-D series offers high power and reliability within a footprint of just 1.6mm³. Instead of the light being emitted centrally, the XQ-D LEDâ??s light pattern directs the light to the edge of the device. This
- Color: White, Other
- Color Temperature: 6500 K
- Optical Power Output: 2300 milliwatts
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Description: nm. The module has multiple laser devices such as edge-emitting laser diodes (LDs), vertical cavity surface-emitting laser diodes (VCSELs), or photon up-conversion laser devices including second-harmonic generation (SHG). The module has an optical output such as an
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Description: Description / Abstract This standard addresses hazards and provides guidance for the safe use, maintenance, service, and installation (manufacturer) of optical communications systems (OCS) utilizing laser diodes or light emitting diodes (LED) operating at wavelengths between 0.6
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Description: exploration of the cutting-edge technology of LEDs Practical Lighting Design with LEDs, Second Edition helps engineers and managers meet the demand for the surge in usage for products using light-emitting diodes with a practical guide that takes them through the relevant fields
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Supplier: Infineon Technologies AG
Description: CIPOS™ Mini 600 V, 6 A three-phase intelligent power module CIPOS™ Mini 600 V, 6 A three-phase TRENCHSTOP™ RCD2 IGBT based intelligent power module with open emitter in DIP 36x21. It is designed to control three-phase motors in variable speed drive in low and medium
- Configuration: Three Phase, Other / Specialty Configuration
- Input Current: 6 amps
- Output Power: 600 watts
- Output Voltage: 600 volts
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Supplier: Infineon Technologies AG
Description: CIPOS™ Mini 600 V, 15 A three-phase intelligent power module CIPOS™ Mini 600 V, 15 A three-phase TRENCHSTOP™ RCD2 IGBT based intelligent power module with open emitter in DIP 36x21. It is designed to control three-phase motors in variable speed drive in low and medium
- Configuration: Three Phase, Other / Specialty Configuration
- Input Current: 15 amps
- Output Power: 1200 watts
- Output Voltage: 600 volts
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Supplier: Infineon Technologies AG
Description: excellent thermal performance. Moreover, it enables higher power capability based on Infineon’s leading-edge TRENCHSTOP™ IGBTs and anti-parallel diodes together with optimized SOI gate driver along with excellent thermal conduction and electrical isolation. Coming soon: EVAL-M1-IM535
- Configuration: Three Phase, Other / Specialty Configuration
- Input Current: 30 amps
- Output Power: 3000 watts
- Output Voltage: 600 volts
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Supplier: ValueTronics International, Inc.
Description: or edge-emitting LED, the Q8347 accurately measures the transmission characteristics of optical narrow-band-pass filters employed for EDFA systems at the accuracy ±0.01 nm. In measuring a filter with spectral-width of 1 nm, dynamic range is 35 dB (Averaging 16 times). Linearity at the level
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Innodisk’s GMSL2 Camera Module and Adapter Board Series delivers long-distance, low-latency, high-resolution imaging for edge AI applications. Supporting up to 15 m FAKRA cables and powered by the Sony ISX031 sensor with HDR and LED Flicker Mitigation, it captures clear, stable images in (read more)
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VMI specializes in high voltage diodes, power supplies, optocouplers, multipliers and related assemblies. Our products are custom designed for military, industrial, medical, aerospace and other high-reliability applications operating at the leading edge of technology. Established (read more)
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VMI offers the most complete range of high voltage diodes in the world. Our axial-lead and SMD diodes range from 2kV to 20kV. All wafers are doped, diffused and metalized in our facility. We offer extensive testing to insure that our customers receive the (read more)
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Half-Duplex Fiber-Optic Data Transmission With A Semiconductor Junction Transceiver
We have investigated the detector performance of a number of LED's including large area surface emitters, Burrus diodes, and edge emitting diodes .
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Fiber Optic Sensors: An Introduction for Engineers and Scientists
Doubled solid state lasers, 37 Double heterostructure, 44 Dual wavelength interrogation, 271 Dynamic range, 201 Edge emitting diode , 44–45 Einstein A coefficient, 39 Electric field, see Voltage sensors Electronic transitions, 27 Electrooptic effect, 87–91 Electrooptic tensor, 90 Ellipticity, 161 Embedded sensors, 278 …
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The passive optically pumped Rb frequency standard: the laser approach
For example, in [43], using an edge emitting diode , a S/N of 66 dB was reported with a line width of 570 Hz, lead- ing to a predicted frequency stability of ∼ 3×10−12 τ−1/2 .
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http://www.if.pwr.wroc.pl/~optappl/pdf/2007/no3/optappl_3703p209.pdf
Scalar and vectorial approaches to cavity modes of the GaAs-based 1.3-µm oxide-confined edge emitting diode laser .
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Hybrid Integration of End-to-End Optical Interconnects on Printed Circuit Boards
One end of the optical waveguide is defined along the cavity stripe of the edge emitting diode and the other end of the op- tical waveguide covers the active region of the PiN photodiode.
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Comprehensive above-threshold analysis of antiresonant reflecting optical waveguide edge-emitting diode laser
Recently, his research interests include phase-locking of the multi- core fiber laser, modeling of the edge emitting diode lasers and modeling dy- namics of diode laser with optical delayed feedback.
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Diode laser based light sources for biomedical applications
All these devices are edge emitting diode lasers, i.e., the propagation of the generated laser emission is in plane with the substrate surface [27].
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InGaAsP/InP Heterostructure Doped by Cobalt
Properties of prepared heterostructures were tested on edge emitting diodes with the stripe geometry.
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How exact are simplified scalar approaches to optical fields in oxide-confined stripe-geometry diode lasers?
Construction details of the highly strained, double quantum well oxide-confined 1.3-µm edge emitting diode laser [8] under consideration.
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Handbook Of Biological Confocal Microscopy
Dimensions and cross-section through an edge emitting diode laser.
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