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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 40ms/50%/32V ¦ 2.7-3.1GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Operating Frequency: 2700 to 3100 MHz
- Output Power: 120 watts
- Package Type: Other
- Power Gain: 13 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 50W @ 1ms/15%/50V ¦ 5.2-5.9GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Operating Frequency: 5200 to 5900 MHz
- Output Power: 50 watts
- Package Type: Other
- Power Gain: 14 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.030GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1030 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: MACOM
Description: MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear
- Operating Frequency: 0.0 to 6000 MHz
- Output Power: 4 to 500 watts
- Package Type: Other
- Power Gain: 9 to 20 dB
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific,
- Operating Frequency: 0.0 to 4000 MHz
- Output Power: 18 to 45 watts
- Package Type: Other
- Power Gain: 11 to 14 dB
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Supplier: Acme Chip Technology Co., Limited
Description: GAN041-650WSB/SOT429 /TO-247
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high
- Operating Frequency: 3000 MHz
- Output Power: 120 watts
- Package Type: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency,
- Operating Frequency: 6000 MHz
- Output Power: 10 watts
- Package Type: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high
- Operating Frequency: 3000 MHz
- Output Power: 180 watts
- Package Type: Other
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Supplier: Qorvo
Description: The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant.
- Operating Frequency: 2500 to 5000 MHz
- Package Type: Other
- Power Gain: 18.8 dB
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation. Lead free and RoHS compliant.
- Package Type: Other
- Transistor Grade / Operating Range: Military
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Description: GANFET N-CH 650V 34.5A TO247-3
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: CoorsTek
Description: devices in demanding applications including data servers, RF and microwave, solar cell inverters, and electric and hybrid vehicles. GaN epi layers on Silicon wafers CoorsTek deposits thin epitaxial layers of gallium nitride on top of silicon wafers, creating GaN-on-Si epiwafers which
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Supplier: ODG (Origin Data Global)
Description: AIRFAST RF POWER GAN TRANSISTOR,
- Operating Frequency: 2496 to 2690 MHz
- Package Type: Other
- Power Gain: 14.2 dB
- Transistor Type: MOSFET RF Transistors, Other
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Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
- Transistor Type: JFET
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Supplier: Win Source Electronics
Description: Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products-- Transistors-- FETs, MOSFETs-- RF FETs, MOSFETs Series: GaN Package: Tray Voltage - Rated: 84 V Technology: HEMT Package / Case: 440166 Supplier Device Package: 440166 Base Product Number: CGH55015 Product
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors DC-4GHz 45W GaN 48V
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Supplier: Richardson RFPD
Description: The NPT2022 GaN HEMT is a wideband transistor optimized for DC-2 GHz operation. This device has been designed for saturated and linear operation with output power levels to 100W (50 dBm) in an industry standard plastic package with a bolt down flange.
- Operating Frequency: 0.0 to 2000 MHz
- Output Power: 100 watts
- Package Type: Other
- Power Gain: 19 dB
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Supplier: Wolfspeed
Description: High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency,
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
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Supplier: DigiKey
Description: RF Mosfet GaN HEMT
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Description: RF MOSFET GAN AC360B-2
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: RF Power GAN Transistor, DFN6
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Richardson RFPD
Description: Test board without GaN HEMT
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Supplier: Acme Chip Technology Co., Limited
Description: RF MOSFET GAN HEMT
- Packing Method: Other
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Supplier: Richardson RFPD
Description: CMP2560025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity
- Amplifier Type: Power Amplifier
- Frequency Range: 2500 to 6000 MHz
- Maximum Gain: 25 dB
- Maximum Operating Voltage: 26 volts
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Supplier: DigiKey
Description: CGHV96100F2 GaN Transistor Evaluation Board
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Description: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing
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Supplier: Materion Corporation
Description: Materion Corporation provides ceramic air cavity packages that are industry standard outlines for RF Power Transistors. These packages offer proven performance and reliability. The cost-effective packages are excellent platforms for wireless applications in the 500 MHz to 3.5 GHz
- Applications: Other
- Shape / Form: Bar Stock
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Supplier: Materion Corporation
Description: CuPacks™ by Materion Microelectronics and Services deliver outstanding performance for cutting edge, high power Si and GaN transistors, and meet the industry’s demands for low thermal resistance and low RF loss. These unique packages feature 0.2 mm thick copper leads and base
- Electroceramic Type: Other
- Shape / Form: Bar Stock
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Featured Products Top
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
Conduct Research Top
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RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs