-
Supplier: MACOM
Description: MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear
- Power Gain: 9 to 20 dB
- Output Power: 4 to 500 watts
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
-
Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
-
Supplier: Qorvo
Description: The QPD0007 is a single-path discrete GaN on SiC HEMT in a DFN package which operates from DC to 5 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 20W at +48 V operation. Lead free and RoHS compliant.
- Power Gain: 19 dB
- Operating Frequency: 0 to 5,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
-
-
Supplier: Qorvo
Description: The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different
- Power Gain: 24 dB
- Operating Frequency: 0 to 12,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
-
Supplier: Qorvo
Description: QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications,
- Power Gain: 11.5 dB
- Operating Frequency: 3,100 to 3,500 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
-
Supplier: Qorvo
Description: The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations. Lead-free and ROHS compliant.
- Power Gain: 15 dB
- Operating Frequency: 0 to 25,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
-
Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Transistor Type: MOSFET RF Transistors
-
Supplier: Integra Technologies, Inc.
Description: Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800″ (40.60mm), L=0.400″ (20.30mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Power Gain: 22 dB
- Output Power: 160 watts
- Operating Frequency: 420 to 450 MHz
- Transistor Type: MOSFET RF Transistors
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET
- V(BR)DSS: 650 volts
- PD: 187 milliwatts
- TJ: -55 to 175 C
- MOSFET Operating Mode: Enhancement
-
Supplier: Integra Technologies, Inc.
Description: With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070″ (27.17mm), L=0.400″ (20.30mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Power Gain: 16 dB
- Output Power: 400 watts
- Operating Frequency: 1,030 to 1,090 MHz
- Transistor Type: MOSFET RF Transistors
-
Supplier: Integra Technologies, Inc.
Description: Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800″ (20.32mm), L=0.230″ (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
- Power Gain: 13.5 dB
- Output Power: 80 watts
- Operating Frequency: 2,700 to 3,100 MHz
- Transistor Type: MOSFET RF Transistors
-
Supplier: Wolfspeed
Description: Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency,
- Output Power: 25 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
-
Supplier: Wolfspeed
Description: Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency,
- Output Power: 10 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
-
Supplier: Wolfspeed
Description: Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency,
- Output Power: 45 watts
- Operating Frequency: 4,000 MHz
- Features: HEMT, Other
-
Supplier: Wolfspeed
Description: Wolfspeed’s CGH40035F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40035F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high
- Output Power: 35 watts
- Operating Frequency: 6,000 MHz
- Features: HEMT, Other
-
Supplier: Newark, An Avnet Company
Description: Airfast RF Power GaN Transistor, 2496-2690 MHz, 34 W Avg., 48 V / REEL RoHS Compliant: Yes
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
-
Supplier: Acme Chip Technology Co., Limited
Description: GAN041-650WSB/SOT429/TO-247
- V(BR)DSS: 650 volts
- IDSS: 47,200 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
-
Supplier: VAST STOCK CO., LIMITED
Description: RF JFET Transistors DC-4GHz 45W GaN 48V
- Transistor Type: JFET
-
Supplier: Newark, An Avnet Company
Description: Airfast RF Power GaN Transistor, 3300 3700 MHz, 15.1 W Avg., 48 V / REEL RoHS Compliant: Yes
-
Supplier: Newark, An Avnet Company
Description: TRANSISTOR GAN, 600V, 31A; Drain Source Voltage Vds:600V; Continuous Drain Current Id:31A; Typical Gate Charge:5.8nC; Transistor Mounting:Surface Mount; No. of Pins:20Pins; Product Range:CoolGaN Series RoHS Compliant: Yes
-
Description: GANFET N-CH 650V 34.5A TO247-3
- V(BR)DSS: 650 volts
- IDSS: 34,500 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
-
Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1349696-GAN041-650WSBQ Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 30 Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Power
- Polarity: N-Channel
- Package Type: SOT3, TO-247
-
Supplier: Win Source Electronics
Description: Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products-- Transistors-- FETs, MOSFETs-- RF FETs, MOSFETs Series: GaN Package: Tray Voltage - Rated: 84 V Technology: HEMT Package / Case: 440166 Supplier Device Package: 440166 Base Product Number: CGH55015 Product
- Features: MOSFET, MOSFET RF Transistors
- Package Type: SOT3
-
Supplier: Richardson RFPD
Description: Test board with GaN HEMT installed
-
Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Wolfspeed, Inc. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs Series: GaN Package: Tray Product Status: Active Technology: HEMT Frequency: 2.9GHz ~ 3.5GHz Voltage - Test: 45 V Current
- Operating Frequency: 2,900 to 3,500 MHz
- Features: MOSFET, MOSFET RF Transistors
- Package Type: SOT3
-
Supplier: Nexperia B.V.
Description: The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features and
- Transistor Grade / Operating Range: Industrial
- Features: Other
-
Supplier: ODG (Origin Data Global)
Description: AIRFAST RF POWER GAN TRANSISTOR,
- Power Gain: 14.2 dB
- Operating Frequency: 2,496 to 2,690 MHz
- Features: MOSFET, Other
- Transistor Type: MOSFET RF Transistors
-
Supplier: Win Source Electronics
Description: Manufacturer: Cree/Wolfspeed Win Source Part Number: 846763-CGH40010F Series: GaN Features: RF Mosfet 28 V 200 mA Package: Tray Part Status: Not For New Designs Family Name: CGH40* Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open
- Features: MOSFET, MOSFET RF Transistors
- Package Type: SOT3
-
Supplier: CoorsTek
Description: applications including data servers, RF and microwave, solar cell inverters, and electric and hybrid vehicles. GaN epi layers on Silicon wafers CoorsTek deposits thin epitaxial layers of gallium nitride on top of silicon wafers, creating GaN-on-Si epiwafers which deliver the
-
Supplier: ODG (Origin Data Global)
Description: RF JFET Transistors DC-12 GHz, 10W, 32V GaN RF Tr
-
Supplier: DigiKey
Description: N-Channel 650V 34.5A (Ta) 143W (Ta) Through Hole TO-247-3
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
-
Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W (typical) of
- Frequency Range: 20 to 500 MHz
- Minimum Gain: 1.2 dB
- Maximum Gain: 1.2 dB
- Output Power( P1dB): 46.2 to 48 dBm
-
Supplier: Rochester Electronics
Description: RF Power GAN Transistor, DFN6
- Features: Other, Power MOSFET
- Packing Method: Tape Reel
Find Suppliers by Category Top
Featured Products Top
-
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
-
RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
-
Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
-
Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs