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Supplier: Richardson RFPD
Description: This extreme rugged power amplifier pallet has been designed to cover the entire HF board from 1 to 30 MHz, offering OEMs a single, unsurpassed solution for their HF power amplifier designs. Designed for CW applications, the HF150-0130HG is equipped
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 800K Hz, 0-28 V rms. 100 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 800K Hz, 0-28 V rms. 1400 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 800K Hz, 0-28 V rms. 1000 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Amp-Line Corp.
Description: Wideband AC power amplifier: Broadband, Linear, 5 Hz - 800K Hz, 0-28 V rms. 300 watts. DC-coupled option and optional output transformer available to obtain different output voltage ranges in audio, ultrasonic and RF frequencies.
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Device Type: Operational Amplifiers
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Supplier: Richardson RFPD
Description: The 1213 is suitable for HF broadband and specific high power linear applications. This amplifier utilizes the latest push-pull LDMOS power devices that provide high gain, wide dynamic range, low distortions, and good linearity. The amplifier utilizes a device
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Supplier: ValueTronics International, Inc.
Description: Size: 26.5" H x 17" W x 22.5" (67.3 x 43.2 x 57.1 cm) Weight: 165 lbs (74.8 kg) The ENI A-500, RF Power Amplifier, is a highly, class A Power Amplifier. The ENI A-500, RF Power Amplifier, is designed for RFI/ EMI, HF transmitter, plasma
- Frequency Range: 35 MHz
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Supplier: ValueTronics International, Inc.
Description: 300 W output power 55 dB gain (nominal) Front panel metering 50 Ohm impedance N(f) connectors, input/output 115/230 VAC; 50/60 Hz operation The ENI A300 is a highly linear, class A power amplifier. The ENI A300 is designed for RFI/EMI, HF
- Frequency Range: 35 MHz
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Supplier: ValueTronics International, Inc.
Description: )D The ENI A1000 is a highly linear, class A power amplifier. The ENI A1000 is designed for RFI/EMI, HF transmitter, plasma NMR system applications as well as general laboratory purposes. The ENI A1000 delivers low distortion amplification over the entire useful frequency range.
- Frequency Range: 35 MHz
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Supplier: ValueTronics International, Inc.
Description: VHF Transmitters Plasma Equipment General Laboratory Nuclear Accelerators The ENI 3200L RF Amplifier covers the frequency range of 250 kHz to 150 MHz, with Class A linear power output ranging from 25 to 200 Watts. This reliable solid state unit is
- Frequency Range: 150 MHz
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Supplier: Infineon Technologies AG
Description: Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.3 dB - Low noise figure: 0.90 dB - Low current consumption: 4.4 mA - Operating frequencies: 728 - 960 MHz - Supply voltage: 1.5 V to 3.3 V - Digital on
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 728 to 960 MHz
- Maximum Gain: 13.3 dB
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA725L6 -- BGA725L6Supplier: Infineon Technologies AG
Description: described. The BGA725L6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 20.0 dB Out-of-band input 3rd order intercept point: -2 dBm Input
- Package Type: Other
- RoHS Compliant: Yes
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA824N6 -- BGA824N6Supplier: Infineon Technologies AG
Description: described in Chapter 3 (see datasheet). The BGA824N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Summary of Features High insertion power gain: 17.0 dB Out-of-band input 3rd order intercept
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: BGA729N6 is a broadband low power low noise amplifier (LNA) MMIC for portable and mobile TV applications which covers a wide frequency range from 70 MHz to 1000 MHz. The LNA provides 16.3 dB gain and 1.1 dB noise figure at a current consumption of 6.0 mA in the application
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Comdel, Inc.
Description: Simplify Operations and Reduce Costs Without Sacrificing Performance Performance: The CDX 2000 dual frequency RF generator comes in a 2000 watt design. The high frequency (HF) section of the CDX provides 1000 watts of power, with optional frequencies from 2 to 60
- AC Input Voltage: 187 to 229 volts
- DC Output Power: 2000 watts
- Features: Adjustable Frequency, Pure Sine Output
- Form Factor: Rack Mount
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Supplier: Comdel, Inc.
Description: Simplify Operations and Reduce Costs Without Sacrificing Performance Performance: The CDX 1000 dual frequency RF generator comes in a 1200 watt design. The high frequency (HF) section of the CDX provides 600 watts of power, with optional frequencies from 2 to 60
- AC Input Voltage: 187 to 229 volts
- DC Output Power: 1200 watts
- Features: Adjustable Frequency, Pure Sine Output
- Form Factor: Rack Mount
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Supplier: L-com, Inc.
Description: power, data or RF cables to the enclosure. Additional holes can be added to the enclosure for custom orders. The Enclosure is a rugged weatherproof design that is ideal for both indoor and outdoor applications. Constructed from molded fiberglass reinforced polyester, it is well suited
- Depth: 7 inch
- Length / Height: 14 inch
- Width/Diameter: 12 inch
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Supplier: Coilcraft, Inc.
Description: The ZA9423-33N and the ZA9423-66N high-frequency, high-current, surface-mount inductors are perfectly suited for use as low-loss chokes in RF amplifiers for HF, VHF, ISM, broadcast, and aerospace applications. Their high Q factors and high current ratings give designers great
- Inductance Range: 0.0660 microH
- Operating Temperature: -40 to 125 C
- RoHS Compliant: Yes
- SRF: 436 MHz
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Supplier: Rohde & Schwarz USA, Inc.
Description: Optimized HF and VHF/UHF modules for best possible receiving conditions To create ideal receiving conditions, two multicoupler modules have been developed for the R&S®ASDU02. The HF module covers the 10 kHz to 30 MHz band, the VHF/UHF module covers the 20 MHz to 3 GHz band
- 0º Power Divider Division: 4-Way
- Category: Active
- Divider / Combiner Type: 0º
- Frequency Range: 0.0100 to 30 MHz
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Supplier: RS Components, Ltd.
Description: Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators. Transistor Type = NPN Maximum DC Collector Current = 50 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-723 Mounting Type = Surface Mount
- IC(max): 50 milliamps
- PD: 150 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators. Transistor Type = NPN Maximum DC Collector Current = 50 mA Maximum Collector Emitter Voltage = 20 V Package Type = SOT-723 Mounting Type = Surface Mount
- IC(max): 50 milliamps
- PD: 150 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators. Transistor Type = NPN Maximum DC Collector Current = 500 mA Maximum Collector Emitter Voltage = 12 V Package Type = SOT-723 Mounting Type = Surface
- IC(max): 500 milliamps
- PD: 150 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: Wide-band high-frequency bipolar junction transisstors from ROHM for applications such as RF amplifiers and HF oscillators. Transistor Type = NPN Maximum DC Collector Current = 50 mA Maximum Collector Emitter Voltage = 11 V Package Type = SOT-323 (SC-70) Mounting Type
- IC(max): 50 milliamps
- PD: 200 milliwatts
- Package Type: SOT323, Other
- Polarity: NPN
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
a low-cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The QPA2597 is offered in a 4x4 mm plastic overmold QFN. It is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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Journal of Propulsion and Power > Thrust Measurements of a Radio Frequency Plasma Source
HF Transceiver Amplifier RF Power Meter Matching Network .
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Journal of Propulsion and Power > Initial Performance Evaluation of a Gridded Radio Frequency Ion Thruster
hf Transceiver Amplifier RF Power Meter Matching Network .
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Cost effective, high performance GaN technology
Gallium Nitride HEMT transistors are the future solid state technology that is presently advancing the performance of state-of-the-art RF power amplifiers from HF frequencies through low mmW applications.
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Clamped-mode resonant converter implementation of an RF power amplifier
[7] H. Raab y D.J. Rupp “A Quasi-ComplementaryClass-D HF Power Amplifier ” RF Design, pp 103-110, Sep. 1992.
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Switching transients in class-D RF power amplifiers
"Quasi-compl ementary cl ass-D HF power amplifier ," RF Design, 15, 103 - 110.
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General balance power analysis of HFHPTA with (M,N)-composite signals
Keywords: RF technique, high power HF amplifier , flattened extremums, composite periodic signals with two harmonics.
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Analysis and design of the Class E frequency multipliers with RF choke
His research interests include high-efficiency switching- mode power amplifiers , RF power circuits, HF , VHF, and UHF radio transmitters and communications equipments, and EMC related problems.
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Second harmonic reduction in broadband HF/VHF/UHF class E RF power amplifiers
Second harmonic reduction in broadband HF /VHFIUHF class E RF power amplifiers .
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Lateral Power Transistors in Integrated Circuits
D.P. Myer, in Practical HF /VHF/UHF RF power amplifier realization, ed. by John L. B. Walker.
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Programmable digital radio
Both channels contain 20 Watt HF / VHF/ UHF RF Power Amplifiers that cover 2 MHz to 450 MHz.