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Supplier: Richardson RFPD
Description: The 1213 is suitable for HF broadband and specific high power linear applications. This amplifier utilizes the latest push-pull LDMOS power devices that provide high gain, wide dynamic range, low distortions, and good linearity. The amplifier utilizes a device
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part. This listing supports
- Features: Other
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Features: Operational Amplifiers
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Supplier: ValueTronics International, Inc.
Description: ENI A-500, RF Power Amplifier, is designed for RFI/ EMI, HF transmitter, plasma NMR systemapplications as well as general laboratory purposes. The ENI A-500, RF Power Amplifier, delivers low distortion amplification over the entire useful frequency
- Frequency Range: 35 MHz
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA824N6 -- BGA824N6Supplier: Infineon Technologies AG
Description: switches BGS15MU14 | RF Switches BGS12P2L6 | RF Switches BGSX24MU16 | Antenna cross switches BGS12WN6 | RF Switches BGSX22G5A10 | Antenna cross switches BGSX33M5U16 | Antenna cross switches BGS14M8U9 | RF Switches BGC100GN6 | Coupler BGA729N6 | Multi-purpose LNAs
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: BGS12P2L6 | RF Switches BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGS14WMA9 | RF Switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGS12P2L6 | RF Switches 1 2
- Features: Other
- Standards and Certifications: RoHS Compliant
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Amplifier and Comparator Chips - RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA725L6 -- BGA725L6Supplier: Infineon Technologies AG
Description: BSP322P | Small signal/small power MOSFET OPTIGA TRUST B SLE 95250 | OPTIGA™ Trust XMC1403-Q064X0200 AA | 32-bit XMC1000 Industrial Microcontroller Arm® Cortex®-M0 IPT030N12N3 G | N-Channel Power MOSFET BSC098N10NS5 | N-Channel Power MOSFET IRS2186S | Gate driver ICs
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Silicon Germanium Low Noise Amplifier for LTE Summary of Features: - Insertion power gain: 13.3 dB - Low noise figure: 0.90 dB - Low current consumption: 4.4 mA - Operating frequencies: 728 - 960 MHz - Supply voltage: 1.5 V to 3.3 V - Digital on/off switch (1V logic high level) - Ultra
- Frequency Range: 728 to 960 MHz
- Minimum Gain: 13.3 dB
- Maximum Gain: 13.3 dB
- Noise Figure: 0.9 dB
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Supplier: Comdel, Inc.
Description: Simplify Operations and Reduce Costs Without Sacrificing Performance Performance: The CDX 2000 dual frequency RF generator comes in a 2000 watt design. The high frequency (HF) section of the CDX provides 1000 watts of power, with optional frequencies from 2 to 60 MHz. The low
- AC Input Voltage: 187 to 229 volts
- Input Frequency: 50 to 60 Hz
- Output Frequency: 2 to 13.56 MHz
- Number of Outputs: 2 #
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Supplier: ValueTronics International, Inc.
Description: The PSG2400A is a 2.4 GHz RF Generator from Farnell. An RF generator is a tool engineers use to generate sinusoidal outputs while testing electronic equipment. The output will automatically have its frequency varied or swept between frequencies. A “sweep” is one complete cycle of a
- Minimum Frequency Range: 2,400 MHz
- Maximum Frequency Range: 2,400 MHz
- Device Type: Generator
- Generator Type: Signal, Sweep
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Supplier: Coilcraft, Inc.
Description: The ZA9423-33N and the ZA9423-66N high-frequency, high-current, surface-mount inductors are perfectly suited for use as low-loss chokes in RF amplifiers for HF, VHF, ISM, broadcast, and aerospace applications. Their high Q factors and high current ratings give designers great
- Inductance Range: 0.033 microH
- DCR: 0.00062 ohms
- SRF: 817 MHz
- Operating Temperature: -40 to 125 C
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Supplier: L-com, Inc.
Description: With the optional HGX-AMOUNT02 bracket a wide array of HyperLink Amplifiers, Power-Over-Ethernet products and Power Supplies can be mounted as well. Two of these brackets can be mounted side by side. Also available is the HGX-NMOUNT03 Universal Mounting Shelf that can be
- Length / Height: 14 inch
- Width/Diameter: 12 inch
- Depth: 7 inch
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Supplier: Rohde & Schwarz USA, Inc.
Description: Optimized HF and VHF/UHF modules for best possible receiving conditions To create ideal receiving conditions, two multicoupler modules have been developed for the R&S®ASDU02. The HF module covers the 10 kHz to 30 MHz band, the VHF/UHF module covers the 20 MHz to 3 GHz band. 1-to-4
- Frequency Range: 0.01 to 30 MHz
- Divider / Combiner Type: 0º
- 0º Power Divider Division:: 4-Way
- Category: Active
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Supplier: ValueTronics International, Inc.
Description: The 2382 is a 400 MHz Spectrum Analyzer from Marconi. A spectrum analyzer measures the power of spectrums of known and unknown signals. Spectrum analyzers collect information such as the magnitude of an input signal compared to its frequency. As a frequency analyzer, spectrum analyzers’ main
- Frequency Range: 400,000 kHz
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
the final RF amplifier in GSM hand-held equipment in 900 MHz band and other applications in the UHF bands. An analog on-board power controller provides over 70 dB range of gain adjustment. This control also allows for power down with a voltage equal to the logic “Low” to set the device (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
a low-cost driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The QPA2597 is offered in a 4x4 mm plastic overmold QFN. It is internally matched to 50 ohms and includes integrated DC blocking caps on both RF ports allowing for simple system integration. (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
The QPL1842 is a GaAs pHEMT single ended MMIC RF amplifier IC featuring 25dB of gain and low noise from 5MHz to 850MHz. This high linearity IC is designed to support Broadband CATV DOCSIS 4.0 applications, such as Nodes, Amplifiers, and Remote PHY Devices, as well as Fiber to The Home (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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Journal of Propulsion and Power > Thrust Measurements of a Radio Frequency Plasma Source
HF Transceiver Amplifier RF Power Meter Matching Network .
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Journal of Propulsion and Power > Initial Performance Evaluation of a Gridded Radio Frequency Ion Thruster
hf Transceiver Amplifier RF Power Meter Matching Network .
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Cost effective, high performance GaN technology
Gallium Nitride HEMT transistors are the future solid state technology that is presently advancing the performance of state-of-the-art RF power amplifiers from HF frequencies through low mmW applications.
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Clamped-mode resonant converter implementation of an RF power amplifier
[7] H. Raab y D.J. Rupp “A Quasi-ComplementaryClass-D HF Power Amplifier ” RF Design, pp 103-110, Sep. 1992.
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Switching transients in class-D RF power amplifiers
"Quasi-compl ementary cl ass-D HF power amplifier ," RF Design, 15, 103 - 110.
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General balance power analysis of HFHPTA with (M,N)-composite signals
Keywords: RF technique, high power HF amplifier , flattened extremums, composite periodic signals with two harmonics.
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Analysis and design of the Class E frequency multipliers with RF choke
His research interests include high-efficiency switching- mode power amplifiers , RF power circuits, HF , VHF, and UHF radio transmitters and communications equipments, and EMC related problems.
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Second harmonic reduction in broadband HF/VHF/UHF class E RF power amplifiers
Second harmonic reduction in broadband HF /VHFIUHF class E RF power amplifiers .
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Lateral Power Transistors in Integrated Circuits
D.P. Myer, in Practical HF /VHF/UHF RF power amplifier realization, ed. by John L. B. Walker.
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Programmable digital radio
Both channels contain 20 Watt HF / VHF/ UHF RF Power Amplifiers that cover 2 MHz to 450 MHz.