High Amp NPN Transistors

Description: Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature

Description: Silicon Power Transistor High Power Audio Amplifiers

Description: Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V

Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package

Description: DISCONTINUED BY MANUFACTURER, DARLINGTON TRANSISTOR, HIGH POWER, 50 AMPS, 600 VOLTS, NPN SINKING. FREE 2 YEAR RADWELL WARRANTY

Description: NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications

• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: NPN HIGH FREQPOWER AMP

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: NPN HIGH FREQPOWER AMP Product overview: HSG2001VF-01TL-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers

• Transistor Type: Bipolar RF Transistors
• Features: Other

Description: TRANSISTOR REMOTE TERMINAL BLOCK, OUTPUT, 8 POSITION, NPN, 1 AMP, 24 VDC, SCREW CONNECTION METHOD, DIN RAIL MOUNT, GRAY, HIGH SPEED AND LONG DISTANCE. FREE 2 YEAR RADWELL WARRANTY

• Voltage Rating: 24 volts
• Current Rating: 1 amps
• Connector Type: DIN Connector

Description: General Purpose High Current NPN Transistor Arrays / Trans GP BJT NPN 16V 0.1A 500mW 16-Pin PDIP Product overview: CA3081 from Intersil is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision

• Features: Operational Amplifiers

Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow

• Transistor Type: MOSFET

Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow

• Transistor Type: MOSFET

Description: Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V Frequency - Transition: 150MHz Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3 Temperature Range -

• I_C(max): 100 milliamps
• T_J: 125 C
• Power Gain: 180 dB
• Operating Frequency: 150 MHz

Description: Manufacturer: Infineon Technologies Win Source Part Number: 200924-BCW60FN E6393 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package:

• T_J: 150 C
• Power Gain: 380 dB
• Operating Frequency: 250 MHz
• Polarity: NPN

Description: (Ic) (Max): 43.2A Gain: 9.7dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V Frequency - Transition: 400MHz ~ 500MHz Supplier Device Package: M102 Temperature Range - Operating: 200°C (TJ) Case / Package: M102 ECCN: EAR99 Fake Threat In the Open Market: 71

• T_J: 200 C
• Power Gain: 9.7 dB
• Output Power: 1,167 watts
• Operating Frequency: 400 to 500 MHz

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,

• P_D: 580 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: NPN, PNP

Description: Win Source Part Number: 1008883-SG2813J-883B Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Package: Tray Standard Package: 21 Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 600mA Transistor Type: 8 NPN Darlington

• I_C(max): 600 milliamps
• T_J: -55 to 125 C
• Transistor Type: Bipolar RF Transistors, Darlington, General Purpose BJT
• Polarity: NPN

Description: PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections Applications General-purpose switching and amplification

• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors SMD plastic packages Three different gain selections Applications General-purpose switching and amplification

• h_fe: 200 to 450
• V_CEO: 45 volts
• I_C(max): 100 milliamps
• P_D: 200 milliwatts

Description: Transistor, Fairchild, FJV1845FMTF

• Number of Transistors in the Chip: 1
• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other

Description: Quad Darlington Sw. NPN 50V 1.75A PDIP16

• Number of Transistors in the Chip: 4
• Transistor Type: Darlington
• Polarity: NPN
• Features: Other

Description: Transistor, NPN, 0.6A, 75V, SOT-223

• V_CEO: 75 volts
• I_C(max): 600 milliamps
• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN Product overview: JANTX2N6284 from Microsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level

• P_D: 175,000 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: NPN

Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SMT3

• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953

• I_C(max): 3,000 milliamps
• V_CEO: 100 volts
• V_CBO: 120 volts
• f_T: 100 MHz

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 130 MHz
• h_fe: 50

Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified

• I_C(max): 200 milliamps
• V_CEO: 250 volts
• V_CBO: 250 volts
• f_T: 70 MHz

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications For AF input

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 45 volts
• f_T: 250 MHz

Description: RF TRANS NPN 6V 12GHZ SOT323

• I_C(max): 30 milliamps
• V_CEO: 6 volts
• Power Gain: 7 dB
• Noise Figure: 1.5 to 2.5 dB

Description: Bipolar (BJT) Array Transistor, NPN, 30 V, 250 mW, 100 mA, 110, SOT-143 RoHS Compliant: Yes

Description: Trans GP BJT NPN/PNP 40V 0.6A Automotive 6-Pin TSOP T/R

• I_C(max): 600 milliamps
• P_D: 540 milliwatts
• T_J: -65 to 150 C
• Number of Transistors in the Chip: 2

Description: 100V 750@3V,3A NPN 10A 70W TO-220 Darlington Transistors ROHS

• h_fe: 750
• V_CEO: 100 volts
• I_C(max): 10,000 milliamps
• P_D: 70,000 milliwatts

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low

• Noise Figure: 4.6 dB
• Polarity: NPN
• Features: Other