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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature
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Supplier: Allied Electronics, Inc.
Description: Silicon Power Transistor High Power Audio Amplifiers
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Supplier: Allied Electronics, Inc.
Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, DARLINGTON TRANSISTOR, HIGH POWER, 50 AMPS, 600 VOLTS, NPN SINKING. FREE 2 YEAR RADWELL WARRANTY
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Description: NPN HIGH FREQPOWER AMP
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN HIGH FREQPOWER AMP Product overview: HSG2001VF-01TL-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- Transistor Type: Bipolar RF Transistors
- Features: Other
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Supplier: Radwell International
Description: TRANSISTOR REMOTE TERMINAL BLOCK, OUTPUT, 8 POSITION, NPN, 1 AMP, 24 VDC, SCREW CONNECTION METHOD, DIN RAIL MOUNT, GRAY, HIGH SPEED AND LONG DISTANCE. FREE 2 YEAR RADWELL WARRANTY
- Voltage Rating: 24 volts
- Current Rating: 1 amps
- Connector Type: DIN Connector
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: General Purpose High Current NPN Transistor Arrays / Trans GP BJT NPN 16V 0.1A 500mW 16-Pin PDIP Product overview: CA3081 from Intersil is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision
- Features: Operational Amplifiers
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Supplier: Microchip Technology, Inc.
Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Win Source Part Number: 957934-MMBTA44 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 300 mA
- IC(max): 300 milliamps
- TJ: -55 to 150 C
- Power Gain: 50 dB
- Operating Frequency: 50 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 201169-BFR340T Packaging: Reel - TR Mounting: SMD (SMT) Gain: 15dB Frequency - Transition: 14GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz Categories: Discrete Semiconductor Products Temperature Range
- TJ: 150 C
- Power Gain: 60 dB
- Noise Figure: 1.15 dB
- Operating Frequency: 14,000 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 794175-SG2803J-883B Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 125°C (TA) Transistor Type: 8 NPN Darlington Family Name: SG2803 Categories: Discrete Semiconductor Products Manufacturer
- TJ: -55 to 125 C
- Transistor Type: Darlington
- Polarity: NPN
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 201186-BFS469L6E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 14.5dB Frequency - Transition: 22GHz, 9GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.1dB to 1.4dB @ 1.8GHz to 3GHz Categories: Discrete
- TJ: 150 C
- Power Gain: 130 dB
- Noise Figure: 1.1 dB
- Operating Frequency: 22,000 to 9,000 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 0.5A, Bipolar Transistor, Single Bipolar Transistors. This listing
- PD: 1,500 milliwatts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: SMT NPN transistor,FMMT491 1A Ic 5Vce
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: RS Components, Ltd.
Description: Trans Darlington NPN 100V 0.5A SOT23
- Number of Transistors in the Chip: 1
- Transistor Type: Darlington
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors SMD plastic packages Three different gain selections Applications General-purpose switching and amplification
- hfe: 110 to 220
- VCEO: 45 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 500 mA, 50V, 250-600 hFE, SOT-323
- VCEO: 50 volts
- IC(max): 500 milliamps
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IGBT 600V 24A 104W TO220AB Product overview: HGTP12N60C3 from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines,
- PD: 104,000 milliwatts
- TJ: -40 C
- Transistor Type: IGBT
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification
- hfe: 220 to 475
- IC(max): -100 milliamps
- PD: 200 milliwatts
- TJ: 150 C
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SMT3
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953
- IC(max): 3,000 milliamps
- VCEO: 100 volts
- VCBO: 120 volts
- fT: 100 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications For AF input
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified
- IC(max): 200 milliamps
- VCEO: 250 volts
- VCBO: 250 volts
- fT: 70 MHz
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
- Transistor Type: Bipolar RF Transistors
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 5.5V SOT23
- IC(max): 16 milliamps
- VCEO: 5.5 volts
- Power Gain: 9 dB
- Noise Figure: 0.9 to 1.2 dB
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 150V 0.5A 3-Pin TO-39
- IC(max): 500 milliamps
- PD: 1,000 milliwatts
- TJ: 200 C
- Transistor Type: Darlington
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other, Tape Reel
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Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, NPN, 400 V, 10 MHz, 40 W, 1 A, 30 RoHS Compliant: Yes
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also
- hfe: 225
- VCEO: 120 volts
- VCBO: 150 volts
- IC(max): 10,000 milliamps
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Supplier: ROHM Semiconductor GmbH
Description: Suitable for the low frequency amplifier.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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The SMMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a testament to ON Semiconductor's commitment to providing reliable and efficient electronic (read more)
Browse Thermistors Datasheets for Win Source Electronics -
Normally Open Output The XS118BLNAL2 has a three-wire NPN normally open output. When no target is detected, the output transistor remains off. When a suitable metallic object enters the sensing zone, the transistor switches on and sinks current toward the 0 (read more)
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and a space and cost-saving alternative to op-amp based balancing schemes. Engineering testing shows the ALD method of cell balancing extends the product life of stacked caps. Industries such as energy harvesting, transportation, back-up power and automation applications are beginning to (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
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Effects of evaporation layer on free-space optical communication links near sea surface at 1.55 &mgr;m
The transmitter modulates the current across the laser based on the video signal input voltage using the OPA228 op amp and high current NPN transistor .
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Effect of atmosphere on free-space optical communication networks for border patrol
The transmitter modulates the current across the laser based on the voltage from the video signal input, using a Texas Instruments OPA228 high precision op amp and high current NPN transistor .
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Atmospheric transmission at ~1.55 &mgr;m for free-space optical communication
The transmitter modulates the current across the laser based on the voltage from the video signal input, using a Texas Instruments OPA228 high precision op amp and high current NPN transistor .
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Pulse width modulated audio amplifiers
If both PNP and NPN high frequency 2 amp transistors had been available, then a ± 30 volt supply would enable the maximum output power of the amplifier to be raised to 60 .
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Page 4. Semiconductor parts with 618 in root number
10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS .
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Page 5. Semiconductor parts with 566 in root number
5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR .
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Page 2. Semiconductor parts with 666 in root number
5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR .
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Page 19. Semiconductor parts with 161 in root number
10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS .
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Page 44. Semiconductor parts with 002 in root number
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR .
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Page 2. Semiconductor parts with 356 in root number
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP ,400 VOLT .