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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature
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Supplier: Allied Electronics, Inc.
Description: Silicon Power Transistor High Power Audio Amplifiers
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Supplier: Allied Electronics, Inc.
Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, DARLINGTON TRANSISTOR, HIGH POWER, 50 AMPS, 600 VOLTS, NPN SINKING. FREE 2 YEAR RADWELL WARRANTY
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Description: NPN HIGH FREQPOWER AMP
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN HIGH FREQPOWER AMP Product overview: HSG2001VF-01TL-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- Transistor Type: Bipolar RF Transistors
- Features: Other
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Supplier: Radwell International
Description: TRANSISTOR REMOTE TERMINAL BLOCK, OUTPUT, 8 POSITION, NPN, 1 AMP, 24 VDC, SCREW CONNECTION METHOD, DIN RAIL MOUNT, GRAY, HIGH SPEED AND LONG DISTANCE. FREE 2 YEAR RADWELL WARRANTY
- Voltage Rating: 24 volts
- Current Rating: 1 amps
- Connector Type: DIN Connector
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: General Purpose High Current NPN Transistor Arrays / Trans GP BJT NPN 16V 0.1A 500mW 16-Pin PDIP Product overview: CA3081 from Intersil is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision
- Features: Operational Amplifiers
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Supplier: Microchip Technology, Inc.
Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1123650-2N2223A Packaging: Bulk Mounting Style: Through Hole Transistor Type: 2 NPN (Dual) Frequency - Transition: 50MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-78-6 Status: Obsolete
- TJ: -65 to 200 C
- Power Gain: 50 dB
- Output Power: 0.6 watts
- Operating Frequency: 50 MHz
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 33V 244-04
- IC(max): 1,100 milliamps
- VCEO: 33 volts
- Power Gain: 13 dB
- Output Power: 10 watts
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 110213-MMPQ6502 TR13 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 NPN, 2 PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating:
- TJ: -55 to 150 C
- Power Gain: 30 dB
- Operating Frequency: 200 MHz
- Polarity: NPN, PNP
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Supplier: RS Components, Ltd.
Description: PS NPN transistor,BC846B 0.1A Ic 5Vce
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Package / Case: SOT-723 Supplier Device Package: SOT-723 ECCN: EAR99 Fake Threat In the Open
- IC(max): 100 milliamps
- Power Gain: 80 dB
- Output Power: 0.26 watts
- Transistor Type: Bipolar RF Transistors, General Purpose BJT
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Supplier: RS Components, Ltd.
Description: Trans Darlington NPN 60V 0.5A SOT23
- Number of Transistors in the Chip: 1
- Transistor Type: Darlington
- Polarity: NPN
- Features: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1028374-MRF323 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tray Standard Package: 10 Power - Max: 20W Voltage - Collector Emitter Breakdown (Max): 33V Current - Collector (Ic) (Max): 2.2A Gain: 11dB Transistor Type:
- Power Gain: 11 dB
- Output Power: 20 watts
- Polarity: NPN
- Package Type: SOT3
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Supplier: Nexperia B.V.
Description: NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBS3906 Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V) Applications General-purpose switching and amplification Telephony and professional communication equipment
- hfe: 100 to 300
- VCEO: 40 volts
- IC(max): 100 milliamps
- PD: 250 milliwatts
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 60V, 5.2A, SOT-223
- VCEO: 60 volts
- IC(max): 5,200 milliamps
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- PD: 1,000 milliwatts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear
- Polarity: NPN
- Features: Other
- Transistor Type: Power BJT Transistors
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Supplier: DigiKey
Description: Transistor General Purpose NPN 50V 150mA Surface Mount EMT6
- Polarity: NPN
- Features: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications For AF input
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953
- IC(max): 3,000 milliamps
- VCEO: 100 volts
- VCBO: 120 volts
- fT: 100 MHz
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Supplier: Infineon Technologies AG
Description: NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ) Pb-free (RoHS
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified
- IC(max): 200 milliamps
- VCEO: 250 volts
- VCBO: 250 volts
- fT: 70 MHz
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Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 63 RoHS Compliant: Yes
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also
- hfe: 300
- VCEO: 50 volts
- VCBO: 75 volts
- IC(max): 800 milliamps
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 40V 1A 3-Pin TO-39
- IC(max): 1,000 milliamps
- PD: 6,250 milliwatts
- TJ: 150 C
- Transistor Type: Darlington
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN BIPOLAR
- VCEO: 50 volts
- IC(max): 150 milliamps
- PD: 150 milliwatts
- TJ: -55 to 150 C
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
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The SMMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a testament to ON Semiconductor's commitment to providing reliable and efficient electronic (read more)
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Effects of evaporation layer on free-space optical communication links near sea surface at 1.55 &mgr;m
The transmitter modulates the current across the laser based on the video signal input voltage using the OPA228 op amp and high current NPN transistor .
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Effect of atmosphere on free-space optical communication networks for border patrol
The transmitter modulates the current across the laser based on the voltage from the video signal input, using a Texas Instruments OPA228 high precision op amp and high current NPN transistor .
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Atmospheric transmission at ~1.55 &mgr;m for free-space optical communication
The transmitter modulates the current across the laser based on the voltage from the video signal input, using a Texas Instruments OPA228 high precision op amp and high current NPN transistor .
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Pulse width modulated audio amplifiers
If both PNP and NPN high frequency 2 amp transistors had been available, then a ± 30 volt supply would enable the maximum output power of the amplifier to be raised to 60 .
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Page 4. Semiconductor parts with 618 in root number
10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS .
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Page 5. Semiconductor parts with 566 in root number
5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR .
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Page 2. Semiconductor parts with 666 in root number
5 AMP 180 VOLTS HIGH SPEED NPN TRANSISTOR .
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Page 19. Semiconductor parts with 161 in root number
10 AMP EAST SWITCHING HIGH VOLTAGE NPN TRANSISTOR 1500 VOLTS .
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Page 44. Semiconductor parts with 002 in root number
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR .
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Page 2. Semiconductor parts with 356 in root number
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP ,400 VOLT .