High Amp NPN Transistors

Description: Silicon NPN Transistor, High Voltage Video Output, +200°C Operating Junction Temperature

Description: Silicon Power Transistor High Power Audio Amplifiers

Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package

Description: Silicon NPN Transistor, TO220 Type Package, Collector to Emitter 400 V

Description: DISCONTINUED BY MANUFACTURER, DARLINGTON TRANSISTOR, HIGH POWER, 50 AMPS, 600 VOLTS, NPN SINKING. FREE 2 YEAR RADWELL WARRANTY

Description: NPN Epitaxial Planar Silicon Transistor For High Hfe, Low-Frequency General-Purpose Amp Applications

• Polarity: NPN
• Features: Other
• Package Type: SOT23

Description: NPN HIGH FREQPOWER AMP

• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: NPN HIGH FREQPOWER AMP Product overview: HSG2001VF-01TL-E from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers

• Transistor Type: Bipolar RF Transistors
• Features: Other

Description: TRANSISTOR REMOTE TERMINAL BLOCK, OUTPUT, 8 POSITION, NPN, 1 AMP, 24 VDC, SCREW CONNECTION METHOD, DIN RAIL MOUNT, GRAY, HIGH SPEED AND LONG DISTANCE. FREE 2 YEAR RADWELL WARRANTY

• Voltage Rating: 24 volts
• Current Rating: 1 amps
• Connector Type: DIN Connector

Description: General Purpose High Current NPN Transistor Arrays / Trans GP BJT NPN 16V 0.1A 500mW 16-Pin PDIP Product overview: CA3081 from Intersil is an Operational Amplifier IC for signal conditioning, buffering, current sensing, analog measurement, filtering, and precision

• Features: Operational Amplifiers

Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow

• Transistor Type: MOSFET

Description: driver output and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device. When used to drive bipolar transistors, these drivers maintain the high speeds common to other Microchip drivers. They allow

• Transistor Type: MOSFET

Description: Trans Darlington NPN 60V 0.5A SOT23

• Number of Transistors in the Chip: 1
• Transistor Type: Darlington
• Polarity: NPN
• Features: Other

Description: Trans GP BJT NPN 140V 1A 3Pin ELine

• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other
• Package Type: TO-92

Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 772270-2SD1994ARA Packaging: Tape in Box Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: 3-SIP Power - Max: 1W Transistor Type: NPN Frequency - Transition: 200MHz Part Status:

• I_C(max): 0.00009999999999999999 milliamps
• T_J: 150 C
• Power Gain: 120 dB
• Operating Frequency: 200 MHz

Description: - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 250 MHz Package / Case: SC-89, SOT-490

• I_C(max): 100 milliamps
• Power Gain: 30 dB
• Operating Frequency: 250 MHz
• Output Power: 0.15 watts

Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191560-JANTXV2N5667S Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 (TO-205AD) Temperature Range - Operating: -65°C ~ 200°C

• T_J: -65 to 200 C
• Power Gain: 25 dB
• Output Power: 1.2 watts
• Features: Bulk Pack, Other

Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191391-JAN2N918 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Categories: Discrete Semiconductor Products Supplier Device Package: TO-72 Temperature Range - Operating: -65°C ~ 200°C Manufacturer Homepage:

• T_J: -65 to 200 C
• Power Gain: 20 dB
• Output Power: 0.2 watts
• Features: Bulk Pack, Other

Description: PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 65 V) Applications General-purpose switching and amplification

• h_fe: 220 to 475
• I_C(max): -100 milliamps
• P_D: 200 milliwatts
• T_J: 150 C

Description: NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) AEC-Q101 qualified Applications General purpose switching and amplification Telephony and professional communication equipment

• h_fe: 500 to 1,250
• V_CEO: 45 volts
• I_C(max): 100 milliamps
• P_D: 250 milliwatts

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports

• T_J: 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Polarity: NPN
• Features: Other

Description: Transistor, NPN, 45V, 0.50A, SOT-23

• V_CEO: 45 volts
• I_C(max): 500 milliamps
• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: NPN general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits General-purpose transistors SMD plastic packages Three different gain selections Applications General-purpose switching and amplification

• h_fe: 110 to 220
• V_CEO: 45 volts
• I_C(max): 100 milliamps
• P_D: 200 milliwatts

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET

• V_(BR)DSS: 24 volts
• P_D: 1.45 milliwatts
• T_J: -55 to 150 C
• Features: Enhancement, Other

Description: Transistor General Purpose NPN 50V 150mA Surface Mount EMT6

• Polarity: NPN
• Features: Other

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications For AF input

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 45 volts
• f_T: 250 MHz

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 130 MHz
• h_fe: 50

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953

• I_C(max): 3,000 milliamps
• V_CEO: 100 volts
• V_CBO: 120 volts
• f_T: 100 MHz

Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified

• I_C(max): 200 milliamps
• V_CEO: 250 volts
• V_CBO: 250 volts
• f_T: 70 MHz

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also

• h_fe: 300
• V_CEO: 50 volts
• V_CBO: 75 volts
• I_C(max): 800 milliamps

Description: Trans GP BJT NPN 40V 1A 3-Pin TO-39

• I_C(max): 1,000 milliamps
• P_D: 6,250 milliwatts
• T_J: 150 C
• Transistor Type: Darlington

Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Polarity: NPN

Description: LOW-NOISE SI TRANSISTOR

• I_C(max): 35 milliamps
• V_CEO: 9 volts
• Power Gain: 11.5 dB
• Noise Figure: 1 dB

Description: Bipolar Transistors - BJT Hi Vltg Fast Swtchng NPN Pwr Transistor

• V_CEO: 400 volts
• I_C(max): 4,000 milliamps
• P_D: 31,000 milliwatts
• T_J: 150 C

Description: Bipolar (BJT) Single Transistor, NPN, 200 V, 10 MHz, 60 W, 7 A, 30 RoHS Compliant: Yes