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Supplier: Richardson RFPD
Description: ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS 7 MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: ISOTOP BOOST CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies, Power Factor Correction, Brake Switch. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration. Benefits:
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF VERY HIGH FREQUENCY BAND, N-C
- Package Type: Other
- Polarity: Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF ULTRA HIGH FREQUENCY BAND, N-
- Package Type: Other
- Polarity: Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS V MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: exceptionally fast switching speeds Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These MOSFETs / FREDFETs have been optimized for both hard and soft switching
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 240558-MRF151G Packaging: Tray Voltage Rating: 125V Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 16dB Transistor Polarity: 2 N-Channel (Dual) Common Source Voltage - Test
- Package Type: SOT3, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Microchip Technology, Inc.
Description: available. Additional Features Power Semiconductors, Power Modules and RF Power MOSFETs Catalog Eliminating Parasitic Oscillation between Parallel MOSFETs High Frequency Resonant Half Bridge Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase
- Transistor Type: MOSFET
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Supplier: TE Connectivity
Description: Configuration Features Transistor Driver : Without Contact Features High Frequency Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O High Frequency Relay Contact Current Rating (AMP
- Operating Temperature: -85 to 257 F
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Supplier: TE Connectivity
Description: Configuration Features Transistor Driver : Without Contact Features High Frequency Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O High Frequency Relay Contact Current Rating (AMP
- Operating Temperature: -67 to 185 F
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 1079779-MRF8S9120NR3 Packaging: Reel - TR Voltage Rating: 70V Frequency: 960MHz Current - Test: 800mA Gain: 19.8dB Transistor Polarity: LDMOS Voltage - Test: 28V Power - Output: 33W Family Name: MRF8S9120N
- Package Type: SOT3, Other
- Polarity: Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 802855-PD84008-E Packaging: Tube Voltage - Rated: 25V Frequency: 870MHz Current - Test: 250mA Gain: 16.2dB Transistor Type: LDMOS Voltage - Test: 7.5V Power - Output: 2W Part Status: Obsolete (End Of
- Package Type: SOT3
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1236552-PD55008TR-E Packaging: Reel - TR Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating: 4A Frequency: 500MHz Current - Test: 150mA Gain: 17dB Transistor Type: LDMOS Voltage
- Package Type: SOT3
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: Available in a bolt down flanged version as IGN2729M500 or in a solder mount earless version IGN2729M500S. IGN2729M500 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: TE Connectivity
Description: Configuration Features Transistor Driver : Without Contact Features High Frequency Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O High Frequency Relay Contact Current Rating (AMP
- Operating Temperature: -67 to 185 F
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Supplier: TE Connectivity
Description: Configuration Features Transistor Driver : Without Contact Features High Frequency Relay Contact Arrangement : 2 Form C, DPDT, 2 C/O High Frequency Relay Contact Current Rating (AMP
- Operating Temperature: -67 to 185 F
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Supplier: Rochester Electronics
Description: Small Signal High Frequency Amplifier Transistor
- Package Type: TO-220, Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.030GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Infineon Technologies AG
Description: 20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The
- Package Type: Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: SST4403HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SC5876U3 is the high speed switching transistor for low frequency amplifier, high speed switching
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to
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Supplier: Littelfuse, Inc.
Description: high value option for switching applications. These UIS rated devices are rugged and robust making them comparable to most rugged power MOSFETs. 600V GenX3™ are optimized for high current applications requiring soft-switching frequencies upwards of 200 kHz and
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: RF Small Signal, Ultra High Frequency Band, N-Channel, MOSFET
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: SST2907AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- PD: 200 milliwatts
- Package Type: SOT23, Other
- Packing Method: Tape Reel
- TJ: -55 to 150 C
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Supplier: SAE International
Description: mode PWM controller XTR30010 and the XT2N0825 N-Channel MOSFET. The full system including an isolated half-bridge gate driver and associated isolated power supply has been successfully tested up to 200°C, up to 600kHz of switching frequency and 600V high-voltage bus. The 200°C
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Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, Ultra High Frequency Band, N-Channel MOSFET
- Package Type: Other
- Polarity: N-Channel
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Featured Products Top
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. Current Rating: Continuous collector current (Ic) of 200mA. Power Dissipation: 350mW, suitable for moderate power electronic circuits. High Gain Bandwidth Product: Transition frequency (ft) of 300MHz (read more)
Browse Transistors Datasheets for Win Source Electronics -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
Conduct Research Top
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Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
controls and simple topologies, like Two Transistors Forward (TTF), Half Bridge and Full Bridge. For these configurations, high frequency is seen as one of the most important design trends to improve performance and to reduce cost at system level.
More Information Top
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Portable rangefinder laser transmitter
… and build up for it a driving stage made up of a signal formatter that takes over the pulse sent by a microcontroller (that controls the whole rangefinder) and a switch based on a power high frequency MOSFET transistor 501N16A from DEl.
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http://qspace.library.queensu.ca/jspui/bitstream/1974/1446/1/Zheng_You_200809_PhD.pdf
(a) High-frequency half equivalent circuit model of the OTA in Fig.3-5, (b) high - frequency MOSFET transistor model, (c) simplified circuit model of the proposed OTA.............................................................................43 3-7.
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Direct-drive flight actuators: new challenging problems in nonlinear analysis and control of servo-systems
The high - frequency MOSFET transistor is driven by the MOSFET driver.
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https://dspace.lib.cranfield.ac.uk/bitstream/1826/945/2/PhD181005.pdf
To improve the light output and speed a high-power high - frequency MOSFET transistor was used as a current switch for a high-power LED.
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200 W low cost module integrated utility interface for modular photovoltaic energy systems
The full-bridge inverter is implemented as a zero voltage soft switching high frequency inverterwith MOSFET transistors .
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http://dspace.mit.edu/bitstream/handle/1721.1/17941/56829902-MIT.pdf?sequence=2
CMOS circuits have low power dissipation but are relatively slow for the needs of high-speed communication circuits, so MCML is used to push MOSFET transistors to higher frequencies , but at the cost of having higher power dissipation.
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Computer Methods for Analysis of Mixed-Mode Switching Circuits
the noise behavior of MOSFET transistors at high frequencies , both the intrinsic and parasitic capacitances must be included.
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Optimum design of longitudinal field variable reluctance motors-application to a high performance actuator
The use of MOSFET transistors allows higher frequencies to be reached.
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Electromagnetic interference prediction of a flyback switchmode power supply using simulation techniques
R.A. Minasian, "Power Mosfet transistors in high frequency switched mode power converters," IREECON, 19th International Electronics Convention, Institution of Radio and Electronics Engineers Australia, Sept.1983, pp.634-636.
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FET Circuits, page 2a, free electronic circuit links
AN18 Power MOSFET Gate Driver Circuits using High Current Super-B Transistors: 6a Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing: Zetec Semiconductors Applications Notes A description of MOSFET converter circuits' requirement for a high current buffer stage, a …