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Supplier: ERSAELECTRONICS PTE. LTD.
Description: High Frequency Synchronous Power Module Product overview: CSD88539ND from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- TJ: -55 C
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: ISOTOP BUCK CHOPPER MOSFET POWER MODULE. Application: AC and DC Motor Control, Switched Mode Power Supplies. Features: Power MOS 7 MOSFETs, ISOTOP Package (SOT-227), Very Low Stray Inductance, High Level of Integration. Benefits: Outstanding Performance at High
- Transistor Type: MOSFET, Power MOSFET
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Noise Figure: 2.4 dB
- Polarity: NPN
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA Product overview: J310 from InterFET is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems,
- Transistor Type: MOSFET
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Supplier: TE Connectivity
Description: Protection Diode : Without Coil Power Measurement : Milliwatts Coil Suppression Diode : Without High Frequency Relay Coil Power Rating (DC) (MILW) : 369 High Frequency Relay Coil Resistance (OHM) : 390 High Frequency Relay Coil Voltage Rating (VDC) : 12
- Operating Temperature: -85 to 257 F
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 240558-MRF151G Packaging: Tray Voltage Rating: 125V Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 16dB Transistor Polarity: 2 N-Channel (Dual) Common Source Voltage - Test: 50V Power - Output: 300W
- Output Power: 300 watts
- Power Gain: 16 dB
- Operating Frequency: 175 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
- Polarity: N-Channel
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094961-MMBF5484 Packaging: Reel - TR Voltage Rating: 25V Current Rating: 5mA Frequency: 400MHz Transistor Polarity: N-Channel JFET Voltage - Test: 15V Noise Figure: 4dB Categories: Discrete Semiconductor Products Status:
- Transistor Type: JFET
- Polarity: N-Channel
- Features: Other, Tape Reel
- Package Type: SOT23, SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 1087142-PD84002 Packaging: Reel - TR Voltage Rating: 25V Current Rating: 2A Frequency: 870MHz Current - Test: 100mA Gain: 15dB Transistor Polarity: LDMOS Voltage - Test: 7.5V Power - Output: 2W Family Name: PD84002 Categories:
- Features: Other
- Package Type: SOT3, SOT89
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 802855-PD84008-E Packaging: Tube Voltage - Rated: 25V Frequency: 870MHz Current - Test: 250mA Gain: 16.2dB Transistor Type: LDMOS Voltage - Test: 7.5V Power - Output: 2W Part Status: Obsolete (End Of Life) Supplier Device
- Power Gain: 16.2 dB
- Output Power: 2 watts
- Operating Frequency: 870 MHz
- Features: Enhancement, Other, Shipping Tube / Stick Magazine
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Supplier: Microchip Technology, Inc.
Description: compatible driver families are the TC1426/27/28, TC4426/27/28, and TC4426A/27A/28A. For product comparison, please consider: TC4426A Additional Features High-Speed Switching (CL = 1000pF): 30nsec High Peak Output Current: 1.5A High Output Voltage Swing: VDD – 25mV GND +25mV Low
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compatible driver families are the TC1426/27/28, TC4426/27/28, and TC4426A/27A/28A. For product comparison, please consider: TC4428A Additional Features High-Speed Switching (CL = 1000pF): 30nsec High Peak Output Current: 1.5A High Output Voltage Swing: VDD – 25mV GND +25mV Low
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: compatible driver families are the TC1426/27/28, TC4426/27/28, and TC4426A/27A/28A. For product comparison, please consider: TC4427A Additional Features High-Speed Switching (CL = 1000pF): 30nsec High Peak Output Current: 1.5A High Output Voltage Swing: VDD – 25mV GND +25mV Low
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: times less than 25 ns Propagation Delays less than 20 ns Inverting High-Speed High-Voltage Schottky Logic Efficient Operation at High Frequency
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: RF VERY HIGH FREQUENCY BAND, N-C
- Power Gain: 13 dB
- Operating Frequency: 175 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.1 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IRFR4615 | N-Channel Power MOSFET BSR316P | Small signal/small power MOSFET IPT015N10N5 | N-Channel Power MOSFET BSS84PW | Small signal/small power MOSFET BSS123N | Small signal/small power MOSFET IRFS4229 | N-Channel Power
- rDS(on): 0.115 ohms
- TJ: 150 C
- VGS(off): 2 to 4 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 3 volts
- IC(max): 60 amps
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power
- rDS(on): 0.011 ohms
- TJ: 175 C
- VGS(off): 3 to 5 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.7 volts
- IC(max): 70 amps
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: 200V Single N-Channel StrongIRFET™ Power MOSFET in a DirectFET™ MZ package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The
- rDS(on): 0.1 ohms
- TJ: 150 C
- VGS(off): 3 to 5 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: SST4403HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: Littelfuse, Inc.
Description: conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT
- VCES: 600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Transistor Type: IGBT
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Supplier: ROHM Semiconductor USA, LLC
Description: SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number IDM30512CW100 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 under CW conditions. Over the instantaneous operating band of 30-512 this dual MOSFET device is capable of supplying a minimum of 100 watts of
- Output Power: 100 watts
- Operating Frequency: 30 to 512 MHz
- Features: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, MOSFET
- Transistor Type: MOSFET, Power MOSFET
- Polarity: N-Channel
- Features: Other, Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: 2SC5876U3 is the high speed switching transistor for low frequency amplifier, high speed switching
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Supplier: SAE International
Description: been designed with a high focus in offering a robust, reliable and efficient solution for driving a large variety of high-temperature, high-voltage, and high-efficiency power transistors (SiC, GaN, Si) existing in the market. The XTR40010 is used for isolated data
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET. MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency
- Transistor Type: MOSFET
- Features: Other
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Supplier: Wolfspeed
Description: Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial
- Transistor Type: MOSFET
- Features: Other
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Trench MOSFET technology Ultra low QG and QGD for high system
- Features: Enhancement, Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase
- Transistor Type: MOSFET
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR552P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: 2SA2088U3 is the high speed switching transistor for small signal low frequency amplifier, high speed switching
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for Efficiency Optimization ■ Depletion Mode Device - Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use
- Power Gain: 22 dB
- Output Power: 160 watts
- Operating Frequency: 420 to 450 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Featured Products Top
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. Current Rating: Continuous collector current (Ic) of 200mA. Power Dissipation: 350mW, suitable for moderate power electronic circuits. High Gain Bandwidth Product: Transition frequency (ft) of 300MHz (read more)
Browse Transistors Datasheets for Win Source Electronics -
The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4mΩ N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology from Richardson RFPD is optimized for high performance power electronics applications (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch All die in parallel with their own gate series resistor for homogenous current balancing High (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
Conduct Research Top
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Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
controls and simple topologies, like Two Transistors Forward (TTF), Half Bridge and Full Bridge. For these configurations, high frequency is seen as one of the most important design trends to improve performance and to reduce cost at system level.
More Information Top
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Portable rangefinder laser transmitter
… and build up for it a driving stage made up of a signal formatter that takes over the pulse sent by a microcontroller (that controls the whole rangefinder) and a switch based on a power high frequency MOSFET transistor 501N16A from DEl.
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http://qspace.library.queensu.ca/jspui/bitstream/1974/1446/1/Zheng_You_200809_PhD.pdf
(a) High-frequency half equivalent circuit model of the OTA in Fig.3-5, (b) high - frequency MOSFET transistor model, (c) simplified circuit model of the proposed OTA.............................................................................43 3-7.
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Direct-drive flight actuators: new challenging problems in nonlinear analysis and control of servo-systems
The high - frequency MOSFET transistor is driven by the MOSFET driver.
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https://dspace.lib.cranfield.ac.uk/bitstream/1826/945/2/PhD181005.pdf
To improve the light output and speed a high-power high - frequency MOSFET transistor was used as a current switch for a high-power LED.
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200 W low cost module integrated utility interface for modular photovoltaic energy systems
The full-bridge inverter is implemented as a zero voltage soft switching high frequency inverterwith MOSFET transistors .
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http://dspace.mit.edu/bitstream/handle/1721.1/17941/56829902-MIT.pdf?sequence=2
CMOS circuits have low power dissipation but are relatively slow for the needs of high-speed communication circuits, so MCML is used to push MOSFET transistors to higher frequencies , but at the cost of having higher power dissipation.
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Computer Methods for Analysis of Mixed-Mode Switching Circuits
the noise behavior of MOSFET transistors at high frequencies , both the intrinsic and parasitic capacitances must be included.
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Optimum design of longitudinal field variable reluctance motors-application to a high performance actuator
The use of MOSFET transistors allows higher frequencies to be reached.
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Electromagnetic interference prediction of a flyback switchmode power supply using simulation techniques
R.A. Minasian, "Power Mosfet transistors in high frequency switched mode power converters," IREECON, 19th International Electronics Convention, Institution of Radio and Electronics Engineers Australia, Sept.1983, pp.634-636.
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FET Circuits, page 2a, free electronic circuit links
AN18 Power MOSFET Gate Driver Circuits using High Current Super-B Transistors: 6a Pulse Rated SOT23 Transistors for High Frequency MOSFET Interfacing: Zetec Semiconductors Applications Notes A description of MOSFET converter circuits' requirement for a high current buffer stage, a …