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Supplier: JFW Industries, Inc.
Description: JFW has been designing, manufacturing, and delivering high power RF switches for over 20 years. With our extensive line of high power solid-state RF switch models, JFW has solutions to fit your specific high power coaxial
- Actuator Type: SPDT
- Actuator Voltage: 5 to 15 volts
- Frequency Range: 800 to 2700 MHz
- Impedance: 50 ohms
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Supplier: Crane Aerospace & Electronics
Description: Crane's Microwave Solutions offers a wide range of product solutions from component level devices to complex, advanced integrated microwave assemblies. Products include: Ferrite products Circulators and Isolators Passive products Mixers, Power
- Average Power: 100 watts
- Flat Leakage: 1000 milliwatts
- Frequency Band: 350 to 15000 MHz
- Input VSWR: 2.2 :1
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Supplier: Broadcom Inc.
Description: The Avago HSMP-386J is a high power RF pin diode specifically design for high power handling and low distortion transmit/receive switching applications It is housed in a 2mm x 2mm QFN package..
- CT: 1.25 pF
- Configuration: Single
- Diode Applications: Switching, Other
- Diode Type: PIN Diodes
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Supplier: Crane Aerospace & Electronics
Description: The T-ISLT-2-2131 is a PIN diode based high power microwave switch covering 6 to 18 GHz. Power levels up to 100 W CW are handled over the operating temperature range. The switch offers high isolation and termination for the non-selected port. This
- Actuator Type: SPDT
- Actuator Voltage: 5 to 30 volts
- Connector: SMA
- Control Interface: TTL
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Supplier: Acme Chip Technology Co., Limited
Description: HIGH POWER T/R SWITCH WITH LIMIT
- Actuator Voltage: 3.15 to 3.45 volts
- Frequency Range: 6000 to 12000 MHz
- Insertion Loss: 1.7 dB
- Isolation (Port to Port): 26 dB
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Supplier: Qorvo
Description: The QPC8020Q is a low loss, high isolation SP4T switch with performance optimized for GSM, CDMA, WCDMA, & LTE applications requiring high linearity and high power handling. The QPC8020Q is packaged in a compact 1.1 mm x 1.1 mm, 9-pin module which allows for a small
- Actuator Type: SP4T
- Actuator Voltage: 1.65 to 1.95 volts
- Frequency Range: 617 to 6000 MHz
- Insertion Loss: 0.2200 dB
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors.
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Supplier: Crane Aerospace & Electronics
Description: The T-ISLT-2-2134 is a PIN diode switch for UHF applications. The device operates with an external driver supplied by the customer. The switch offers high isolation and termination for the non-selected port. This switch is suitable for signal control applications
- Actuator Type: SPDT
- Actuator Voltage: 5 to 30 volts
- Connector: SMA
- Control Interface: Other
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Supplier: ValueTronics International, Inc.
Description: The 432C is a used RF Power Meter from Agilent. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF
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Supplier: Skyworks Solutions, Inc.
Description: The SKY13597-684LF is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of -40 °C to +90 °C . Switching is
- Actuator Type: SP4T, Other
- Frequency Range: 700 to 3800 MHz
- Package Type: Surface Mount, Other
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Supplier: Skyworks Solutions, Inc.
Description: The SKY5A5110 is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of –40 °C to +105 °C. Switching is
- Actuator Type: SP4T, Other
- Frequency Range: 400 to 3800 MHz
- Isolation (Port to Port): 43 dB
- Package Type: Surface Mount, Other
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Supplier: ValueTronics International, Inc.
Description: The 432A is a used Power Meter from Agilent. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF power
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Supplier: JFW Industries, Inc.
Description: JFW has been designing, manufacturing, and delivering high power RF switches for over 20 years. With our extensive line of medium power solid-state RF switch models, JFW has solutions to fit your specific medium power coaxial switch
- Actuator Type: SPDT
- Actuator Voltage: 5 to 15 volts
- Control Interface: TTL
- Frequency Range: 500 to 3000 MHz
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Supplier: Radwell International
Description: MOSFET DRIVER, HIGH-SIDE, SOIC-8; NO. OF CHANNELS:1CHANNELS; DRIVER CONFIGURATION:HIGH SIDE; POWER SWITCH TYPE:MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:NON-INVERTING; SOURCE CURRENT:250MA; SINK CURRENT:500MA ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL
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Supplier: Skyworks Solutions, Inc.
Description: The SKY12248-492LF is a compact single-pole, double-throw (SPDT) fail-safe switch for TDD 4G and 5G applications. It can be tuned to specific RF bands within the range of 2.3 to 4.2 GHz by modifying select external SMT components. This device features high-power handling at hot,
- Actuator Type: SPDT, Other
- Frequency Range: 2300 to 4200 MHz
- Package Type: Surface Mount, Other
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Supplier: Skyworks Solutions, Inc.
Description: capacitance. Switching is controlled by an integrated GPIO interface with a single control pin. Depending on the logic voltage level applied to the control pin, RF1 port can be either connected to RF2 port or RF1 and RF2 ports will be in isolation state. No
- Actuator Type: SPST, Other
- Frequency Range: 100 to 2700 MHz
- Package Type: Surface Mount, Other
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Supplier: DigiKey
Description: HIGH POWER T/R SWITCH WITH LIMIT
- Actuator Type: SPDT
- Frequency Range: 6000 to 12000 MHz
- Insertion Loss: 1.7 dB
- Isolation (Port to Port): 26 dB
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Supplier: DigiKey
Description: SPDT High Power PIN Diode Switch
- Actuator Type: SPDT
- Frequency Range: 960 to 1300 MHz
- Insertion Loss: 0.5000 dB
- Isolation (Port to Port): 46 dB
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Supplier: Richardson RFPD
Description: UltraCMOS® SPDT RF Switch 100 - 2700 MHz. The PE42821 is a HaRP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch is a
- Actuator Type: SPDT, Other
- Frequency Range: 100 to 2700 MHz
- Insertion Loss: 0.6000 dB
- Isolation (Port to Port): 28 dB
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Supplier: Richardson RFPD
Description: UltraCMOS® SP4T RF Switch 30 MHz–6 GHz. The PE42442 is a HaRP™ technology-enhanced absorptive SP4T RF switch designed for use in 3G/4G wireless infrastructure and other high performance RF applications. This switch is a pin-compatible four throw
- Actuator Type: SP4T, Other
- Frequency Range: 30 to 6000 MHz
- Insertion Loss: 1.15 dB
- Isolation (Port to Port): 52 dB
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Supplier: Richardson RFPD
Description: Ka-Band High Power Terminated SPDT PIN Switch, 26-40 GHz. The MASW-011036 is a high power SPDT with 50 O terminated RF ports. This broadband, high linearity, SPDT switch was developed for Ka–Band applications that require up to 13 W of
- Actuator Type: SPDT, Other
- Frequency Range: 26000 to 40000 MHz
- Insertion Loss: 0.8000 dB
- Isolation (Port to Port): 38 dB
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Supplier: Richardson RFPD
Description: The PE42822 is a HaRP™ technology-enhanced absorptive 50O SPDT RF protection switch designed for use in high power and high performance wireless infrastructure applications such a mid-power microcell products, supporting frequencies up to 3.8 GHz. This
- Actuator Type: SPDT, Other
- Frequency Range: 700 to 3800 MHz
- Insertion Loss: 0.8000 dB
- Isolation (Port to Port): 41 dB
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Supplier: Qorvo
Description: The QPC6324 is a Silicon on Insulator (SOI) single-pole, double-throw (SPDT) switch, designed for use in 4G/5G wireless infrastructure applications and other high performance communications systems. It offers high isolation with excellent linearity and power handling
- Configuration: SPDT
- Min Operating Current: 0.1000 mA
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Marki Microwave LLC
Description: The MSW2-1002HLGA is a reflective, single-pole double throw (SPDT) switch. The part is manufactured using a Silicon-On-Insulator (SOI) process. The switch operates from 100MHz to 20GHz with average insertion loss and isolation of 0.8 dB and 44 dB respectively and input power
- Frequency Range: 100 to 20000 MHz
- Package Type: Surface Mount, Other
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Supplier: Menlo Microsystems, Inc.
Description: The MM5130 is the world’s first generally available high-power SP4T RF Ideal Switch. It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles. The
- Actuator Type: SPST, SP4T
- Actuator Voltage: 89 volts
- Frequency Range: 26000 MHz
- Insertion Loss: 0.1000 to 1.3 dB
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Supplier: Infineon Technologies AG
Description: The BTS5215L is a high side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Summary of Features Very low standby current CMOS Compatible input Improved electromagnetic compatibility (EMC) Fast
- Operating Ambient Temperature: -40 to 150 C
- Package Type: Other
- RoHS Compliant: Yes
- tOFF: 270000 ns
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Supplier: AR Modular RF
Description: The Model KAA2030 is a general-purpose, wideband RF power amplifier for signals in the 500 KHz to 40 MHz frequency range. No tuning, band switching, or adjustments of any kind are required to operate this unit. Power output is in excess of 200 Watts into a 50-Ohm load.
- Amplifier Type: Power Amplifier
- Frequency Range: 0.5000 to 40 MHz
- Gain Flatness: 1.5 dB
- Maximum Operating Voltage: 245 volts
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Supplier: DigiKey
Description: SP4T High Power PIN Diode Switch
- Actuator Type: SP4T
- Frequency Range: 30 to 512 MHz
- Insertion Loss: 0.6000 dB
- Isolation (Port to Port): 65 dB
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Supplier: ValueTronics International, Inc.
Description: The E4419B is a used RF Power Meter from Agilent. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF
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Supplier: ValueTronics International, Inc.
Description: The EPM-442B is a used RF Power Meter from Agilent. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF
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Supplier: Infineon Technologies AG
Description: | Low Noise RF Transistors TDA5240 | Wireless control receiver BTS5200-1ENA | PROFET™ + 12V | automotive smart high-side switch TLS105B0MB | OPTIREG™ linear voltage regulators (LDO) IRLML6401 | P-Channel Power MOSFET TLE9271QX
- Operating Ambient Temperature: -40 to 150 C
- Package Type: Other
- RoHS Compliant: Yes
- tOFF: 150000 ns
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Supplier: Infineon Technologies AG
Description: miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch is controlled via a GPIO interface. It features DC-free
- Actuator Type: Other
- Actuator Voltage: 2.4 to 3.4 volts
- Control Interface: Other
- Frequency Range: 100 to 3800 MHz
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Supplier: Infineon Technologies AG
Description: a miniature ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch is controlled via a GPIO interface. It features DC-free
- Actuator Type: SP8T, Other
- Actuator Voltage: 2.4 to 3.4 volts
- Control Interface: Other
- Frequency Range: 100 to 3800 MHz
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Supplier: Fairview Microwave Inc.
Description: ready for quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 12 GHz and a maximum power of 25 Watts. PIN diode single pole double throw
- Connector: SMA
- Frequency Range: 0.0 to 12000 MHz
- Impedance: 50 ohms
- Insertion Loss: 2 dB
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Supplier: TE Connectivity
Description: RF Rated : No Relay Connection Type : Flying Leads Termination Features High Voltage Connection (Coil) : Turret Terminals High Voltage Connection (Power) : Flying Leads
- Pole Specifications: Single Pole (SP)
- Throw Specifications: Single Throw
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Featured Products Top
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XM Series is RF Switch based on SOI "Silicon On Insurator" and GaAs "gallium arsenide" process. It is suitable product for Radio Frequency applications such as Cellular or ISM band widely. Switch control Interface supports GPIO and MIPI with various configurations: High Power, High Isolation, excellent linearity and Insertion Loss. (read more)
Browse RF Switches Datasheets for Murata Electronics -
High-Speed RF Test Platforms: Signal switching and routing Industrial & Medical RF Systems: Microwave gating and control By combining (read more)
Browse RF Switches Datasheets for Win Source Electronics -
High-Performance WR187 Waveguide Rotary Joint for 5.4–5.9GHz High-Power Applications Precision RF PerformanceEngineered for the 5.4–5.9GHz C-band, this rotary joint delivers industry-leading electrical specifications. The (read more)
Browse RF Rotary Joints Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
, Corrosion Resistant. FEATURES & BENEFITS 2.4 GHz Channel Hopping 802.15.4 Compliant Meets IEC 60601 3rd Edition Automatic RF power level adjustment of Transmitter (read more)
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Efficient, Low-Noise RF Power Amplification for Industrial Wireless Systems Qorvo’s RFPA0133TR7 integrates advanced GaAs HBT technology to provide a compact, digitally (read more)
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Recently, UIY has launched a new 800W high power circulator, the new 175-210MHz high power RF circulator is designed with ferrite magnetic circuit optimization and fully sealed coaxial structure to achieve reverse isolation enhancement and peak power carrying capacity, which has become a (read more)
Browse RF Isolators and RF Circulators Datasheets for UIY Inc. -
Our half turn and single turn trimmer ranges offer low magnetic content, resulting in a cost effective solution suitable for many MRI applications. Due to the severe non-magnetism requirements in the magnetic resonance industries, we only use high purity metals that exhibit no measurable (read more)
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two independent RF signals, reducing system complexity and saving space, with 60dB isolation to prevent cross-talk. High Power Capability: Supports 1kW peak power and 50W (read more)
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Datasheet WMHPC-80-520M-6dB-N High Power Directional Coupler, 80-520MHz, 6d (read more)
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experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
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Basics of RF Switches
RF and microwave switches route signals through transmission paths with a high degree of efficiency. Four fundamental electrical parameters characterize how these switch designs perform. Several electrical parameters are associated with the performance of RF and microwave switch designs, but four
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Using the TC1142 for Biasing a GaAs Power Amplifier
frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch.
More Information Top
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Novel RF devices with multiple capacitively-coupled electrodes
Low- loss high power RF switching using III-Nitride materials and .
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Photo-injection p-i-n diode switch for high-power RF switching
Scaling up the size of the PIPINS will allow for even higher RF power switching at the expense of higher optical con- trol power.
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Latched microswitches in laminates for high power 0-6.5 GHz applications
This Letter reports yet another exciting application of the previously reported laminate microelectromechanical magnetic direct contact (LMEMS) technology [4] in order to address existing problems in high power RF switches .
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High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors
REFERENCES [1] A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and A. Khan, “Low-loss high power RF switching using multifinger AlGaN–GaN MOSHFETs,” IEEE Electron Device Lett., vol.
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Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors
[10] A. Koudymov, G. Simin, M. Ali, X. Hu, J. Yang, and M. A. Khan, “Low-loss high power RF switching using multigate AlGaN/GaN MOS heterostructure field-effect transistors,” IEEE Electron Device Lett., vol.
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Subject Index
Vellas, N., + , EDL May 02 246-248 AlGaN/GaN multifinger MOS HFET, low-loss high power RF switch .
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The Development of a High Power SP4T RF Switch in GaN HFET Technology
In this letter, the development of a hybrid single-pole four throw (SP4T) high power RF switch using discrete AlGaN/GaN HFETs is demonstrated for the first time for system applications of three transmitters and a receiver.
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
For years, lack of a fast Ultra- high power RF switch has kept a lot of great application ideas unrealistic.
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High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts
Lett, 52, 1893-1895 (2005) [4] A. Koudymov, X. Hu, K. Simin, G. Simin, M. Ali, J. Yang, and Asif Khan, Low-Loss high power RF switching using Multifinger AlGaN/GaN MOSHFETs, EEE El. Dev.
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
Active pulse compression systems using high power RF switches have attracted research interest in recent years.
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