High Power Pin Photodiodes

Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of f4.1 mm. Using quartz glass as the light input window, this photodiode delivers high

• Active Area Diameter or Length: 4.1 mm
• Active Area Height: 4.1 mm
• Dark Current: 30 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: The S7509 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required.

• Active Area Diameter or Length: 2 mm
• Active Area Height: 10 mm
• Dark Current: 5 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: The S7510 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required.

• Active Area Diameter or Length: 6 mm
• Active Area Height: 11 mm
• Dark Current: 10 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: Chip carrier package for surface mount The S5107 is a Si PIN photodiode sealed in chip carrier package suitable for surface mount using automated solder reflow techniques. This photodiode has a large active area, making it suitable for spatial light transmission where a wide

• Active Area Diameter or Length: 10 mm
• Active Area Height: 10 mm
• Dark Current: 10 nA
• PN, PIN, or Avalanche: PIN Photodiode

Description: . These detectors exhibit excellent stability over time and temperature, fast response times necessary for high speed or pulse operation, and position resolutions of better than 0.1 µm. Maximum recommended power density is 10 mW / cm2 and typical uniformity of response for a 1 mm

• Active Area Diameter or Length: 1.3 mm
• Active Area Height: 2.5 mm
• Dark Current: 0.1500 nA
• Operating Temperature: -40 to 100 C

Description: signal while the output voltage increases with light input. This is achieved by a single +3.3V to +5V positive power supply. These devices are available in 4 pin TO-46 metal packages with either a double sided AR coated window cap or an integrated lens cap. The 250µm diameter sensing

• Active Area Diameter or Length: 0.2500 mm
• Operating Temperature: -40 to 75 C
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts

• Active Area Diameter or Length: 3.6 mm
• Active Area Height: 3.6 mm
• Noise Equivalent Power (NEP): 1.80E-14 W/Hz^½
• Operating Temperature: -20 to 60 C

Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts

• Active Area Diameter or Length: 5.8 mm
• Active Area Height: 5.8 mm
• Noise Equivalent Power (NEP): 4.10E-14 W/Hz^½
• Operating Temperature: -20 to 60 C

Description: spectrum. The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements. Photodiodes with the planar diffused

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Spectral Response: UV
• Spectral Response Range: 190 to 1100 nm

Description: spectrum. The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements. Photodiodes with the planar diffused

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Sensitivity: 0.1400 A/W
• Spectral Response: UV

Description: The series HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-400M is available with either a fast Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively.

• Output Type: Voltage Output
• Photosensor Type: PIN Photodiode
• Spectral Response: 320 to 1700 nm
• Supply Voltage: 15 volts

Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650 nm,

• Output Type: Voltage Output
• Photosensor Type: PIN Photodiode
• Spectral Response: 320 to 1700 nm
• Supply Voltage: 15 volts

Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of

• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Other
• Sensitivity: 0.9500 A/W
• Spectral Response Range: 1100 to 1620 nm

Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of

• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Other
• Sensitivity: 0.9500 A/W
• Spectral Response: IR

Description: %. This high gain coupler uses an AlGaAs LED and an integrated high gain photodetector to provide an extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage results in TTL compatible saturation voltages and

• Collector Emitter Breakdown Voltage: 5 volts
• Isolation Voltage: 3750 volts
• Mounting Option: Surface Mount
• Operating Temperature: 0.0 to 70 C

Description: %. This high gain coupler uses an AlGaAs LED and an integrated high gain photodetector to provide an extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage results in TTL compatible saturation voltages and

• Collector Emitter Breakdown Voltage: 5 volts
• Isolation Voltage: 3750 volts
• Mounting Option: Surface Mount
• Operating Temperature: 0.0 to 70 C

Description: High voltage sources from First Sensor are optimized for use with PIN photodiodes and avalanche photodiodes (APDs) and feature minimal voltage noise and a compact design. The available models cover a broad spectrum ranging from moderately high voltages for

Description: This device is a very low power consumption high gain dual channel optocoupler. It represents the dual channel 8-pin DIP configuration and is pin compatible with the popular standard HCPL-2731. Each channel can be driven with an input current as low as 40 µA and has a

• Collector Emitter Breakdown Voltage: 5 volts
• Isolation Voltage: 5000 volts
• Mounting Option: Through Hole (Plug-in)
• Operating Temperature: 0.0 to 70 C

Description: and eliminate DC drifts. Battery Powered for Low-noise Performance Powered by a single 9-V battery, these photoreceivers do not require cooling or high-voltage power supplies. Moreover, only a single coaxial cable is needed to connect the photodetector to other

• Photosensor Type: PIN Photodiode

Description: eliminate DC drifts. Battery Powered for Low-noise Performance Powered by a single 9-V battery, these photoreceivers do not require cooling or high-voltage power supplies. Moreover, only a single coaxial cable is needed to connect the photodetector to other instruments

• Photosensor Type: PIN Photodiode

Description: This dual channel optocoupler contains a separated pair of GaAsP light emitting diodes optically coupled to a pair of integrated high gain photo detectors. It provides extremely high current transfer ratio and excellent input-output common mode transient immunity. A separate pin

• Collector Emitter Breakdown Voltage: 5 volts
• Isolation Voltage: 3750 volts
• Mounting Option: Surface Mount
• Operating Temperature: 0.0 to 70 C

Description: 1030 nm through 1570 nm wavelength range and assures a 30 GHz frequency response necessary for digital and analog applications. The front-illuminated mesastructured PIN design allows a high input power level of up to 20 mW. The F-PD-30-1064 is available in a standard

• Bandwidth: 28000 MHz
• Connector Type: Other
• Photodiode Type: PIN

Description: s and PIN-Photodiodes) Oscilloscope and Transient Recorder Preamplifier Time-Resolved Pulse and Transient Measurements Signal Booster in 50 O High Speed Systems

• Form Factor: Panel / Chassis Mount
• Input Impedance: 5.00E-5 Mohms
• Maximum Output: 2 +/-volts

Description: integrated photodiode transistor detector mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The integrated photodiode transistor improves switching speed by orders of magnitude as compared to

• Isolation Voltage: 1000 volts

Description: The LDC-37620 High Power Laser Diode Controller combines a precision current source with thermoelectric temperature controller. The integrated two range current source provides high stability output with maximum output currents of 10 A/20 A. Multiple levels of laser diode

Description: The MP-6000RX is a RF/Fiber Optic Receiver designed for antenna remoting and ultra-broadband RF transmission applications using singlemode fiber optic cable.The receiver utilizes a high-speed, low distortion PIN photodiode detector that provides Optical to RF conversion out to

• Bandwidth: 20000 MHz
• Cable Type: Single Mode
• Connector Type: FC, SC, Other
• Operating Temperature: -40 to 160 F

Description: controls and photodiode amplifiers. The ISL28110 single amplifier and the ISL28210 dual amplifiers are available in the 8 Ld SOIC package. All devices are offered in standard pin configurations and operate over the extended temperature range from -40°C to +125°C.

• Bandwidth: 12.5 MHz
• CMRR: 100 dB
• Input Bias Current (I_BIAS): 3.00E-7 to 2.00E-6 µA
• Input Offset Voltage (V_OS): 0.3000 millivolts

Description: -sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical

• Amplifier Type: Transimpedance
• Connector Type: LC
• Data Rate: 28000 Mbps
• Photodiode Semiconductor: InGaAs (900nm to 1700nm)

Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting, linear or

• Data Rate: 0.1550 to 14.3 Gbps
• RoHS Compliant: Yes
• Supply Voltage (V_S): 3.3 volts
• Transimpedance: 3 to 63 kohms