High Power Pin Photodiodes

Description: Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high

• Sensitivity: 0.5 A/W
• Spectral Response Range: 190 to 1,100 nm
• Active Area Diameter or Length: 4.1000000000000005 mm
• Active Area Height: 4.1000000000000005 mm

Description: Pigtail type, 1.3/1.55 μm, 2 GHz The G8195-11 is a high-speed receiver specifically developed for 1.3/1.55 μm band power monitor in opticalfiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Dark Current: 0.4 nA
• Photodiode Material: Indium Gallium Arsenide

Description: Readers Optical Remote Control Medical Equipment High Speed Photometry Product Features High Speed Response Low Capacitance Low Dark Current Wide Dynamic Range High Responsivity

• Sensitivity: 0.65 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Rise Time: 3 ns

Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensing area, high sensitivity silicon photodetector. It also

• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.25 mm
• Operating Temperature: -40 to 75 C
• Photodiode Spectral Response: IR, Visible

Description: High voltage sources from First Sensor are optimized for use with PIN photodiodes and avalanche photodiodes (APDs) and feature minimal voltage noise and a compact design. The available models cover a broad spectrum ranging from moderately high voltages for

• Form Factor: Board Mount
• Type: High Voltage Power Supply

Description: of 3500%. This high gain coupler uses an AlGaAs LED and an integrated high gain photodetector to provide an extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage results in TTL compatible saturation

• Isolation Voltage: 5,000 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: 0 to 70 C
• Input: AC, DC

Description: High-sensitivity and high-speed photo IC for high precision printing The S9684 photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable output even when laser power or ambient temperature fluctuates.

• Photodiode Type: PIN Photodiode

Description: range. The receiver is composed of a PIN photodiode and signal processing circuit. The adoption of a full differential structure using a dummy photodiode eliminates the effects of external noise, achieving high sensitivity. In addition, the photo IC has a sleep function

• Operating Temperature: -40 to 95 C
• Photodiode Type: PIN Photodiode

Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650 nm,

• Spectral Response: 320 to 1,700 nm
• Supply Voltage: 15 volts
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: The series HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-400M is available with either a fast Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively.

• Spectral Response: 320 to 1,700 nm
• Supply Voltage: 15 volts
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: This high gain series coupler uses a Light Emitting Diode and an integrated high gain photodetector to provide extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage result in TTL compatible saturation

• Operating Temperature: -40 to 85 C
• Input: DC
• Output: Photodiode
• Mounting Option: Surface Mount

Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts

• Sensitivity: 0.17 A/W
• Spectral Response Range: 200 to 750 nm
• Active Area Diameter or Length: 10.000000000000002 mm
• Active Area Height: 10.000000000000002 mm

Description: This dual channel optocoupler contains a separated pair of GaAsP light emitting diodes optically coupled to a pair of integrated high gain photo detectors. It provides extremely high current transfer ratio and excellent input-output common mode transient immunity. A separate pin

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: 0 to 70 C
• Input: DC

Description: selected as 20, 40 or 60 dB. Applications Preamplifier for Ultra-Fast Detectors (Microchannel-Plates, Photomultipliers, Avalanche-Photodiodes and PIN-Photodiodes) Oscilloscope and Transient Recorder Preamplifier Time-Resolved Pulse and Transient Measurements Signal Booster in 50

• Maximum Output: 2 volts
• Bandwidth: 2,500,000 kHz
• Input Impedance: 0.00005 Mohms
• Output Impedance: 50 ohms

Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts

• Sensitivity: 0.14 A/W
• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 11.280000000000001 mm
• Rise Time: 5.9 ns

Description: pins for the photodiode and output stage results in TTL compatible saturation voltages and high speed operation. Where desired the VCC and VO terminals may be tied together to achieve conventional photodarlington operation. It is for use in CMOS, LSTTL or other low power

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 85 C
• Input: AC, DC

Description: photodiode transistor detector mounted and coupled in a custom 8-pin hermetic flat pack package providing 1000 Vdc electrical isolation between input and output. The integrated photodiode transistor improves switching speed by orders of magnitude as compared to standard photo

• Isolation Voltage: 1,000 volts

Description: percent high-reliability screened version of the OLH5500. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode transistor detector. The separate photodiode and transistor configuration improves speed performance

Description: is a 100 percent high-reliability screened version of the OLH5530. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically coupled to an integrated photodiode transistor detector. The separate photodiode and transistor configuration improves speed performance

• Output: Phototransistor

Description: The 818-BB-27 High Speed UV Enhanced Silicon Optical Detector consists of a silicon detector with an enhanced ultraviolet response, making it well suited for the fourth harmonic Nd:YAG, YLF or Glass Lasers and Excimer Lasers. Additionally, its large 2.55 mm active diameter and 3 ns rise time

• Receiver Rise Time: 3 ns
• Bandwidth: 0 to 118 MHz
• Features: Other
• Receiver Type: PIN

Description: protective housing. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before

• Bandwidth: 21,000 MHz
• Features: Other
• Receiver Type: PIN

Description: Adjustable transimpedance gain from 102 to 108V/A Wide bandwidth up to 200 MHz Various Si and InGaAs models cover the 320 to 1,700 nm wavelength range High dynamic input range up to 10 mW optical power Large optical detector size up to 3 mm dia. Very low noise, NEP down to 88 fW/√Hz

• Spectral Response: 400 to 1,700 nm
• Supply Voltage: 15 volts
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: protective housing. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before

• Bandwidth: 28,000 to 30,000 MHz
• Features: Other
• Receiver Type: PIN

Description: The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC

• Receiver Rise Time: 0.025 ns
• Bandwidth: 0 to 15,000 MHz
• Features: Other
• Receiver Type: PIN

Description: The MP-6000RX is a RF/Fiber Optic Receiver designed for antenna remoting and ultra-broadband RF transmission applications using singlemode fiber optic cable.The receiver utilizes a high-speed, low distortion PIN photodiode detector that provides Optical to RF conversion out to

• Responsivity: 0.75 A/W
• Bandwidth: 20,000 MHz
• Operating Temperature: -40 to 159.8 F
• Connector Type: FC, SC

Description: high-sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF

• Data Rate: 28,000 Mbps
• Sensitivity: -14 dB
• Responsivity: 0.7 A/W
• Photodiode Semiconductor: InGaAs (900nm to 1700nm)

Description: The MP-5000RX is a RF/Fiber Optic Receiver designed for antenna remoting and ultra-broadband RF transmission applications using singlemode fiber optic cable. The receiver utilizes a high-speed, low distortion PIN photodiode detector that provides Optical to RF conversion out to

• Responsivity: 0.75 A/W
• Bandwidth: 12,000 MHz
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC

Description: The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are important. The combination of precision, low noise,

• Supply Voltage (V_S): 9 to 40 volts
• Supply Current (I_S): 2.5500000000000003 milliamps
• Input Offset Voltage (V_OS): 0.3 millivolts
• Input Bias Current (I_BIAS): 0.0000003 to 0.000002 µA

Description: control versions for use in high performance optical receivers operating from 155 Mb/s to 14.3 Gb/s. 800mW Reference DesignsSemtech provides complete reference designs for low power SFP+ LR and SR applications. The reference designs showcase Semtech's high performance laser

• Data Rate: 0.155 to 14.3 Gbps
• Transimpedance: 3 to 63 kohms
• Supply Voltage (V_S): 3.3 volts
• Standards and Certifications: RoHS Compliant

Description: Debounce output (SWO), Alarm output (ALO)  Self-recovery short-circuit protection  Power-on delay • Sensor gain is adjusted by an external resistor connected to the SCTRL pin. • Emission drive: 5µs/50µs pulse or 20µs/200µs pulse. • The external circuit is simple, enabling the design

• Features: Photoelectric Sensors

Description: ratio: 150% typical • Base lead provided for conventional transistor biasing • Low power consumption • High radiation immunity • 1000 Vdc isolation test voltage

• Isolation Voltage: 1,000 volts
• Rise Time: 20 µs
• Collector Emitter Breakdown Voltage: 40 volts
• Operating Temperature: -55 to 100 C

Description: array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission.The receiver utilizes a high speed, low distortion PIN photodiode detector that

• Bandwidth: 3,000 MHz
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC
• Features: Other