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Supplier: Broadcom Inc.
Description: The Avago HSMP-386J is a high power RF pin diode specifically design for high power handling and low distortion transmit/receive switching applications It is housed in a 2mm x 2mm QFN package..
- VF: 0.85 volts
- IF: 1,000 mA
- VR: 100 volts
- trr: 130 ns
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Supplier: Richardson RFPD
Description: With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward
- Features: PIN Diodes, RF Diodes, Single
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Supplier: Skyworks Solutions, Inc.
Description: The SMP1334-084LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Typical resistance at 100 mA is 0.45 Ω and
- Features: PIN Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The SMP1325-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 0.5 Ω and
- Features: PIN Diodes
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Supplier: Infineon Technologies AG
Description: This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward resistance make it suitable for a diversity of switching applications,
- IF: 100 mA
- VR: 50 volts
- trr: 75 ns
- Features: Other, PIN Diodes, RF Diodes
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Supplier: Infineon Technologies AG
Description: Silicon RF Switching Diode Summary of Features Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance Pb-free (RoHS compliant) package Potential Applications Set Top Box TV Applications Automotive high-voltage battery management system (BMS)
- IF: 100 mA
- VR: 35 volts
- trr: 120 ns
- Features: Other, PIN Diodes, RF Diodes, Switching
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Supplier: Skyworks Solutions, Inc.
Description: The SMP1302-087LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 Ω and
- Features: PIN Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The SKY12208-478LF is a high power handling, Single-Pole, Double-Throw (SPDT) silicon PIN diode switch. The device can cover two frequency bands, 0.02 to 0.70 GHz or 0.05 to 2.7 GHz, by changing the value of an RF choke in the SMT bias network. The SKY12208-478LF
- Frequency Range: 20 to 2,700 MHz
- Isolation (Port to Port): 35 to 50 dB
- Features: Other
- Type: SPDT
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Supplier: Fairview Microwave Inc.
Description: quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 40 Watts. PIN diode single
- Frequency Range: 0 to 6,000 MHz
- Insertion Loss: 1.3 dB
- Isolation (Port to Port): 25 dB
- VSWR: 1.5 :1
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Supplier: Fairview Microwave Inc.
Description: quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 18 GHz and a maximum power of 10 Watts. PIN diode single
- Frequency Range: 0 to 18,000 MHz
- Insertion Loss: 2.3 dB
- Isolation (Port to Port): 23 dB
- VSWR: 2 :1
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Description: LIMITER HIGH POWER,1.0-2.0GHZ,HE
- Tj: 175 C
- Features: Other, RF Diodes
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Supplier: Fairview Microwave Inc.
Description: quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 12 GHz and a maximum power of 25 Watts. PIN diode single
- Frequency Range: 0 to 12,000 MHz
- Insertion Loss: 2 dB
- Isolation (Port to Port): 25 dB
- VSWR: 1.8 :1
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Supplier: Fairview Microwave Inc.
Description: quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with N ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 100 Watts. PIN diode single
- Frequency Range: 500 to 6,000 MHz
- Insertion Loss: 1.5 dB
- Isolation (Port to Port): 35 dB
- VSWR: 1.6 :1
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Supplier: Acme Chip Technology Co., Limited
Description: LIMITER HIGH POWER 2.0 TO 4.0 GH
- Tj: 175 C
- Features: Other, RF Diodes
- Package: SOT23
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 029438-SMP1321-079LF Packaging: Reel - TR Diode Type: PIN - Single Capacitance @ Vr, F: 0.25pF @ 30V, 1MHz Voltage - Peak Reverse (Max): 100V Power Dissipation (Max): 250mW Resistance @ If, F: 2 Ohm @ 10mA, 100MHz
- Tj: -65 to 150 C
- PD: 250 milliwatts
- CT: 0.25 pF
- Features: Other, RF Diodes
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Supplier: Richardson RFPD
Description: The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their """"off"""" phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that
- RF Frequency Range: 1 to 1,500 MHz
- LO Frequency Range: 1 to 1,500 MHz
- IF Frequency Range: 1 to 1,000 MHz
- Conversion Loss: 7 dB
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Supplier: Win Source Electronics
Description: Manufacturer: Skyworks Solutions Inc. Win Source Part Number: 800835-SMP1352-040LF Packaging: Reel Current - Max: 150mA Diode Type: PIN - Single Supplier Device Package: 0402 Temperature Range - Operating: -65°C ~ 150°C Manufacturer Package: 0402 Power Dissipation (Maximum):
- Tj: -65 to 150 C
- PD: 750 milliwatts
- CT: 0.3 pF
- Features: Other, RF Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 095644-BAP1321-04 Packaging: Reel - TR Current - Max: 100mA Diode Type: PIN - 1 Pair Series Connection Capacitance @ Vr, F: 0.325pF @ 20V, 1MHz Voltage - Peak Reverse (Max): 60V Power Dissipation (Max): 250mW Resistance @ If, F: 1.3 Ohm
- Tj: -65 to 150 C
- PD: 250 milliwatts
- CT: 0.325 pF
- Features: Other, RF Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 021063-MA4P504-1072T Packaging: Reel - TR Diode Type: PIN - Single Capacitance @ Vr, F: 0.5pF @ 100V, 1MHz Voltage - Peak Reverse (Max): 500V Power Dissipation (Max): 7.5W Resistance @ If, F: 600 mOhm @ 100mA,
- Tj: -65 to 175 C
- PD: 7,500 milliwatts
- CT: 0.5 pF
- Features: Other, RF Diodes
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Supplier: Newark, An Avnet Company
Description: HIGH GAIN TRANSISTOR, NPN, 30V; Transistor Polarity:NPN; Collector Emitter Voltage Max:30V; Continuous Collector Current:7A; Power Dissipation:3W; Transistor Mounting:Surface Mount; No. of Pins:4Pins; Transition Frequency:100MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH CURRENT TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:3A; Power Dissipation:1.2W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:80MHzRoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, PNP, -45V; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 200V, Diode and Rectifier, RF Diodes.
- Features: Rectifier Diode
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Supplier: DigiKey
Description: SPDT High Power PIN Diode Switch
- Frequency Range: 960 to 1,300 MHz
- Insertion Loss: 0.5 dB
- Isolation (Port to Port): 46 dB
- Operating Temperature: -20 to 70 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200 V, SOT-23. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 200 V, SOT-23, Diode and Rectifier, RF
- Tj: -55 C
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: Vincotech GmbH
Description: Temperature sensor Single-phase non-controlled rectifier Low diode recovery losses Low reverse recovery time and recovery charge Designed for high switching frequency Convex shaped substrate for superior thermal contact Thermo-mechanical push-and-pull force relief Press-fit pin
- Output Voltage: 650 volts
- Output Current: 160 amps
- Features: Other / Specialty Technology
- Technology: Rectifier
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Supplier: Richardson RFPD
Description: 0.9-4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch
- Frequency Range: 900 to 4,000 MHz
- Insertion Loss: 0.4 dB
- Isolation (Port to Port): 44 dB
- Switching Speed: 0.000157 ms
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: rectifier, Schottky, switching diode, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-DA2S00100L can be used for catalog
- Tj: -40 C
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: Richardson RFPD
Description: 320 W Peak Power Limiter, 1 - 2 GHz. The MADL-011014 is a lead-free surface mount, high power limiter which integrates the equivalent of 19 PIN, Schottky, limiter diodes, capacitors, inductors, and resistors in a compact ceramic package. This device provides
- Frequency Band: 1,000 to 2,000 MHz
- Peak Power: 320 watts
- Insertion Loss: 0.35 dB
- Features: Other
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Supplier: Infineon Technologies AG
Description: Standard pin-out allows for drop-in replacement High current capability Applications Cordless power tools and outdoor power equipment Designers who used this product also designed with IPT012N08N5 | N-Channel Power MOSFET BAT63-02V | RF Mixer and Detector
- rDS(on): 0.06 ohms
- TJ: 175 C
- VGS(off): -4 to -2 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: ValueTronics International, Inc.
Description: where instantaneous bandwidth and high gain are required. Push-pull circuitry is utilized in all high-power stages in the interest of lowering distortion and improving stability. The Model 30W1000M7, when used with an RF generator, will provide a minimum of 30 watts of CW
- Frequency Range: 1,000 MHz
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Supplier: Infineon Technologies AG
Description: MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IKW75N60T | IGBT discretes IDP15E65D2 | Silicon Diodes IRF100P219 | N-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel
- rDS(on): 0.3 ohms
- TJ: 175 C
- VGS(off): 2 to 4 volts
- Features: MOSFET, Other, Power MOSFET
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Fiber Optic Receivers - Fiber-Optic Photodector, PIN PD, InGaAs, 23 GHz, DC Coupled -- F-PD-23-D-FCASupplier: Newport MKS
Description: protective housing. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before
- Bandwidth: 21,000 MHz
- Features: Other
- Receiver Type: PIN
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Fiber Optic Receivers - Fiber-Optic Photodector, PIN PD, InGaAs, 23 GHz, AC Coupled -- F-PD-23-A-FCASupplier: Newport MKS
Description: protective housing. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before
- Bandwidth: 21,000 MHz
- Operating Temperature: -49 to 167 F
- Features: Other
- Receiver Type: PIN
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Supplier: Newport MKS
Description: protective housing. High Linear Output for Up to 40 mW The front-illuminated mesa-structured PIN design allows a high input power level of up to 40 mW for F-PD-23 and 20 mW for F-PD-30. Typical diodes can handle only up to a few mW of optical power before
- Bandwidth: 28,000 to 30,000 MHz
- Features: Other
- Receiver Type: PIN
Find Suppliers by Category Top
Featured Products Top
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Datasheet WMHPC-80-520M-6dB-N High Power Directional Coupler, 80-520MHz, 6d (read more)
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High-Performance WR187 Waveguide Rotary Joint for 5.4–5.9GHz High-Power Applications Precision RF PerformanceEngineered for the 5.4–5.9GHz C-band, this rotary joint delivers industry-leading electrical specifications. The (read more)
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The HLM-20BH is a wideband GaAs Schottky diode limiter delivering up to 4 W power handling and 30 dBm IP3 across DC to (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC -
Smiths Interconnect has been producing qualified isolators and circulators for over 20 years from its facility in Dundee, Scotland (UK). Now the company’s comprehensive range of high-power isolators and circulators for AESA radar applications, ground-based air surveillance radars (read more)
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PIN Diode Switches for High Power Transceivers Skyworks’ silicon product offerings include high power PIN diode switches for use in a wide variety of microwave applications including WLAN, handset, Satcom (LNB/DBS-CATV), automotive, military, aerospace, defense (read more)
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Planned for a release in Q2 of 2026, Werbel Microwave is adding a 1-4GHz High power coupler to their product line. (read more)
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two independent RF signals, reducing system complexity and saving space, with 60dB isolation to prevent cross-talk. High Power Capability: Supports 1kW peak power and 50W (read more)
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Datasheet WMHPC-80-520M-6dB-N High Power Directional Coupler, 80-520MHz, 6d (read more)
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Recently, UIY has launched a new 800W high power circulator, the new 175-210MHz high power RF circulator is designed with ferrite magnetic circuit optimization and fully sealed coaxial structure to achieve reverse isolation enhancement and peak power carrying capacity, which has become a (read more)
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The HLM-40ABH is a wide bandwidth GaAs Schottky diode signal limiter featuring +35 dBm Input IP3 and 2W CW power handling. It offers low 0.7 dB insertion loss and 22 dB return loss from DC through Ka band with a typical 1dB compression point of 9 dBm. Its moderate power handling makes it ideal (read more)
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Conduct Research Top
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AG312: Design with PIN Diodes
The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by DC excitation. A unique feature of the PIN diode is its ability to control large amounts of RF power with much lower levels of DC. The PIN diode
More Information Top
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Abstract cards
Modeling PIN Diodes for High Power RF and Microwave Applications .
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Book of abstracts
Modeling PIN Diodes for High Power RF and Microwave Applications .
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Table of contents
WEPB-2 C Modeling PIN Diodes for High Power RF and Microwave Applications Robert H. Caverly, Villanova University, USA A .
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Detailed author index
C Modeling PIN Diodes for High Power RF and Microwave Applications (WEPB-2) .
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Affiliation index
Modeling PIN Diodes for High Power RF and Microwave Applications .
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IMS 2009 Schedule
WEPB-2: Modeling PIN Diodes in High Power RF and Microwave Applications .
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Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch
Although discrete component PIN diodes have high RF power handling capacity compared to many other discrete component RF switches, they are still far away from the targeted application of pulse compression systems for high energy accelerator structures which requires the handling of…
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Active RF pulse compression using an electrically controlled semiconductor switch
Although discrete component PIN diodes have high RF power handling capacity compared to many other discrete component RF switches, they are still far away from the targeted application of pulse compression systems for high-energy accelerator structures which require the handling of…
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Mitigation of B 1 + inhomogeneity on single‐channel transmit systems with TIAMO
FIG. 2. a: Electrical schematic of the high - power RF switch with PIN diodes . b: Electrical sche- matic of the switch controller; the four stages indicated by the dashed rectangles are described in the text.
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Empower RF Systems Announces New Solid-State High-Power Tx/Rx Switches
The Empower RF Systems series TRS high power PIN diode switches allow for the rapid switching between the transmit and receive paths vital in today's high technology systems.