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  • Modeling of SOI FET for RF Switch Applications
    . contributor to a FET switch at high-power levels. Secondly. the substrate itself is non-linear and sets the harmonic floor. Besides the substrate, the impact of other important SOI. physics, such as the floating-body effect and the parasitic. BJT effect, to the switch linearity will also be discussed
  • Basics of RF Switches
    RF and microwave switches route signals through transmission paths with a high degree of efficiency. Four fundamental electrical parameters characterize how these switch designs perform. Several electrical parameters are associated with the performance of RF and microwave switch designs, but four
  • PIN Diodes for High Power T/R Switches
    I n military radios, private. land mohile radios and cel. lular hase station failsafe. switch systems, high power RF. switching has been the prov. ince of ceramic-packaged PIN. diodes for decades. Recently,. new miniature plastic packages. with excellent thermal prop. erties have been introduced
  • Using the TC1142 for Biasing a GaAs Power Amplifier
    frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch.

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