High Power RF Switch

Description: JFW has been designing, manufacturing, and delivering high power RF switches for over 20 years. With our extensive line of high power solid-state RF switch models, JFW has solutions to fit your specific high power coaxial switch

• Frequency Range: 800 to 2,700 MHz
• Insertion Loss: 0.6 to 1.2 dB
• Isolation (Port to Port): 60 dB
• Switching Speed: 0.01 ms

Description: The Avago HSMP-386J is a high power RF pin diode specifically design for high power handling and low distortion transmit/receive switching applications It is housed in a 2mm x 2mm QFN package..

• V_F: 0.85 volts
• I_F: 1,000 mA
• VR: 100 volts
• t_rr: 130 ns

Description: JFW has been designing, manufacturing, and delivering high power RF switches for over 20 years. With our extensive line of medium power solid-state RF switch models, JFW has solutions to fit your specific medium power coaxial switch

• Frequency Range: 10 to 1,000 MHz
• Insertion Loss: 0.5 to 0.75 dB
• Isolation (Port to Port): 50 dB
• Switching Speed: 0.04 ms

Description: ATSLP package and comprises of a high power CMOS SP8T switch with integrated GPIO interface. This RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. The switch is controlled via a GPIO interface. It features DC-free RF

• Frequency Range: 100 to 3,800 MHz
• Insertion Loss: 0.23 dB
• Isolation (Port to Port): 50 dB
• Actuator Voltage: 2.4 to 3.4 volts

Description: SPDT High Power PIN Diode Switch

• Frequency Range: 960 to 1,300 MHz
• Insertion Loss: 0.5 dB
• Isolation (Port to Port): 46 dB
• Operating Temperature: -20 to 70 C

Description: The BTS5215L is a high side power switch with integrated vertical power FET, providing embedded protection and diagnostic functions. Summary of Features Very low standby current CMOS Compatible input Improved electromagnetic compatibility (EMC) Fast demagnetization of

• t_ON: 250,000 ns
• t_OFF: 270,000 ns
• Operating Ambient Temperature: -40 to 150 C
• Features: Other

Description: BTS5200-1ENA | PROFET™ + 12V | automotive smart high-side switch TLS105B0MB | OPTIREG™ linear voltage regulators (LDO) IRLML6401 | P-Channel Power MOSFET TLE9271QX V33 | OPTIREG™ DCDC SBC BTS3046SDR | Classic HITFET™ 24V |automotive smart low-side switch TLF35584QVVS2 |

• t_ON: 150,000 ns
• t_OFF: 150,000 ns
• Operating Ambient Temperature: -40 to 150 C
• Features: Other

Description: The QPC8020Q is a low loss, high isolation SP4T switch with performance optimized for GSM, CDMA, WCDMA, & LTE applications requiring high linearity and high power handling. The QPC8020Q is packaged in a compact 1.1 mm x 1.1 mm, 9-pin module which allows for a small

• Frequency Range: 617 to 6,000 MHz
• Insertion Loss: 0.22 dB
• Isolation (Port to Port): 45 dB
• Switching Speed: 0.002 ms

Description: HIGH POWER SPDT SWITCH GAAS MMIC

• Operating Frequency: 6,000 MHz
• T_J: -40 to 105 C
• Technology: CDMA, GSM, UMTS
• Features: Other

Description: the IDT F1320, the ACLR and/or power consumption of the full Tx system can be improved significantly.

• Carrier (LO) Frequency Range: 1,400 to 2,900 MHz
• IF (I/Q) Frequency Range: 20 to 550 MHz
• Features: Other
• Package Type: Surface Mount Technology (SMT)

Description: The MM5130 is the world’s first generally available high-power SP4T RF Ideal Switch. It can handle 25 W forward power while providing ultra-low insertion loss. It has superior linearity from 26 GHz down to DC and performs more than 3 billion switching cycles. The

• Frequency Range: 26,000 MHz
• Insertion Loss: 0.1 to 1.3 dB
• Isolation (Port to Port): 25 to 45 dB
• Switching Speed: 0.01 ms

Description: output and the antenna switch provides ultimate flexibility in DECT applications. A Normal Transmit Power (NTP) input is used to control power between –10 dBm and +25 dBm. NTP is a voltage-operated control with a very high input impedance (>100 kΩ) and a range of 0 V to

• Output Power( P_1dB): 25 dBm
• Minimum Operating Voltage: 3 volts
• Maximum Operating Voltage: 4.5 volts
• Features: Other

Description: The Type CCS-47 is a long life, high performance transfer or crossover switch designed for use in 50 Ohms coaxial transmission lines. The switch is available with either failsafe or latching type actuation operating from a variaty of voltage supplies. The primary advantage of

• Frequency Range: 12,000 MHz
• Insertion Loss: 0.5 dB
• Isolation (Port to Port): 60 dB

Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors.

Description: The MM5120 is the world’s first generally available high-power SP4T RF Ideal Switch. This new innovative technology platform enables robust and highly reliable switches capable of >25 W CW power handling at 6.0 GHz. The MM5120 provides ultra-low insertion loss and

• Frequency Range: 18,000 MHz
• Insertion Loss: 0.1 to 1.5 dB
• Isolation (Port to Port): 26 dB
• Switching Speed: 0.015 ms

Description: The QPC3025 is a Silicon on Insulator (SOI) single-pole, double-throw (SPDT) switch, designed for use in 4G / 5G wireless infrastructure applications and other high performance communications systems. It offers low insertion loss in a symmetric topology with excellent linearity. The

• Supply Voltage (V_S): 2.7 to 5.5 volts
• Min Operating Current: 0.09 mA
• Features: Other
• Standards and Certifications: RoHS Compliant

Description: Please note: AS218-000 is being discontinued and is not recommended for new designs. The AS218-000 is a broadband transfer switch designed to combine T/R and antenna diversity switching functions on a single IC. The device is designed to handle high power and maintain

• Frequency Range: 100 to 6,000 MHz
• Isolation (Port to Port): 19 dB
• Type: DPDT
• Features: Other

Description: the IDT F1320/F1370, the ACLR and/or power consumption of the full Tx system can be improved significantly.

• Carrier (LO) Frequency Range: 3,200 to 4,000 MHz
• IF (I/Q) Frequency Range: 20 to 500 MHz
• Features: Other
• Package Type: Surface Mount Technology (SMT)

Description: The SKY12248-492LF is a compact single-pole, double-throw (SPDT) fail-safe switch for TDD 4G and 5G applications. It can be tuned to specific RF bands within the range of 2.3 to 4.2 GHz by modifying select external SMT components. This device features high-power handling

• Frequency Range: 2,300 to 4,200 MHz
• Features: Other
• Type: SPDT
• Package Type: Surface Mount

Description: Qorvo's QPC2040 is a Single-Pole, Double–Throw (SPDT) switch fabricated on Qorvo’s QGaN15 0.15um GaN on SiC production process. Operating from 8 to 12 GHz, the QPC2040 typically supports 10 W input power handling at control voltages of 0/−28 V for pulsed RF operations. This

• Features: Other
• Standards and Certifications: RoHS Compliant

Description: matrix configuration. Using only switches also makes it possible to maintain very high isolation from input to output because switches have better isolation characteristics than power divider/combiners. The one disadvantage is that each input is only available to a single output. Below

• Frequency Range: 0 to 6,000 MHz
• Insertion Loss: 1 to 2 dB
• Isolation (Port to Port): 65 to 70 dB
• Switching Speed: 20 ms

Description: The SKY13597-684LF is a single-pole, four-throw (SP4T) switch. No external DC blocking capacitors are required on the RF paths as long as there is no DC voltage on the RF line. The switch can operate over the temperature range of −40 °C to +90 °C . Switching is controlled

• Frequency Range: 700 to 3,800 MHz
• Features: Other
• Type: SP4T
• Package Type: Surface Mount

Description: The MSW2-1002HLGA is a reflective, single-pole double throw (SPDT) switch. The part is manufactured using a Silicon-On-Insulator (SOI) process. The switch operates from 100MHz to 20GHz with average insertion loss and isolation of 0.8 dB and 44 dB respectively and input power

• Frequency Range: 100 to 20,000 MHz
• Features: Other
• Package Type: Surface Mount

Description: R6004KNX is Low on-resistance and ultra fast switching speed Power MOSFET.

• V_(BR)DSS: 600 volts
• I_DSS: 4,000 milliamps
• Q_G: 10.2 nC
• P_D: 40,000 milliwatts

Description: R6011KNX is Low on-resistance and ultra fast switching speed Power MOSFET.

• V_(BR)DSS: 600 volts
• I_DSS: 11,000 milliamps
• Q_G: 21.999999999999996 nC
• P_D: 53,000 milliwatts

Description: R6009KNX is Low on-resistance and ultra fast switching speed Power MOSFET.

• V_(BR)DSS: 600 volts
• I_DSS: 9,000 milliamps
• Q_G: 16.499999999999996 nC
• P_D: 48,000 milliwatts

Description: R6015KNX is Low on-resistance and ultra fast switching speed Power MOSFET.

• V_(BR)DSS: 600 volts
• I_DSS: 15,000 milliamps
• Q_G: 27.5 nC
• P_D: 60,000 milliwatts

Description: The 432C is a used RF Power Meter from Agilent. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers use RF

Description: The MM9200 is a high-power SPST micro-mechanical switch. The innovative Ideal Switch technology enables highly reliable micro-mechanical switches capable of carrying high voltage and high current in a small form factor. The MM9200 provides ultra-low on-state

• Maximum Current: 10 amps
• Coil Resistance: 0.01 ohms
• Mounting: PC Board
• Features: RF Application Rated

Description: Silicon RF Switching Diode Summary of Features Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance Pb-free (RoHS compliant) package Potential Applications Set Top Box TV Applications Automotive high-voltage battery management system (BMS) Automotive

• I_F: 100 mA
• VR: 35 volts
• t_rr: 120 ns
• Features: Other, RF Diodes

Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 925156-MASW-007071-000100 Operating Temperature Range: -40°C ~ 85°C Features: RF Switch IC General Purpose SPDT 50Ohm 32-PQFN (4x6) Package: 32-PowerVFQFN Package: Tube Family Name: MASW-007071 Categories: RF/IF

• Operating Temperature: -40 to 85 C

Description: MOSFET DRIVER, HIGH-SIDE, SOIC-8; NO. OF CHANNELS:1CHANNELS; DRIVER CONFIGURATION:HIGH SIDE; POWER SWITCH TYPE:MOSFET; NO. OF PINS:8PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:NON-INVERTING; SOURCE CURRENT:250MA; SINK CURRENT:500MA ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL

Description: Avago Technologies' ALM-12224 is a multi-chip integrated module that comprise of a 50 Watt CW high power SPDT switch, low noise amplifier and 2nd stage high gain driver amplifier throught the use of Avago Technologies’ proprietary 0.25um GaAs E-pHEMT process.

• Frequency Range: 100 to 8,000 MHz
• Minimum Gain: 35 dB
• Maximum Gain: 39 dB
• Output Power( P_1dB): 21.99999999999999 to 23.5 dBm

Description: Win Source Part Number: 1045936-ARE1312 Category: Relays>High Frequency (RF) Relays Series: ARE Termination Style: PC Pin Package: Bulk Contact Form: SPDT (1 Form C) Contact Material: Gold Plating Standard Package: 50 Coil Resistance: 720 Ohms Coil Current: 16.7 mA Operate Time: 10 ms

• Coil Resistance: 720 ohms
• Features: Other
• Mounting: PC Board

Description: The QPC6324 is a Silicon on Insulator (SOI) single-pole, double-throw (SPDT) switch, designed for use in 4G/5G wireless infrastructure applications and other high performance communications systems. It offers high isolation with excellent linearity and power handling

• Supply Voltage (V_S): 5 volts
• Min Operating Current: 0.1 mA
• Features: Other
• Standards and Certifications: RoHS Compliant