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Supplier: Richardson RFPD
Description: Avalanche Diode 2700A 2000V , Mounting force 22kN Low on-state voltage Avalanche reverse characteristics High operational reliability Suitable for parallel operation
- IF: 2.70E6 mA
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Nexperia B.V.
Description: High performance voltage regulator diodes in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Features and benefits Very low dynamic impedance at low currents: approximately 5 % of conventional series Hard breakdown knee Low noise
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Nexperia B.V.
Description: The PLVA2600A series consists of two high performance voltage regulator diodes with common anodes, in small SOT23 plastic SMD packages. The series consists of PLVA2650A to PLVA2668A. Features and benefits Very low dynamic impedance at low currents: approximately
- IF: 250 mA
- Lead Type: Other
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Littelfuse, Inc.
Description: The SP3522 integrates ultra low capacitance cathode-to cathode silicon avalanche diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS)
- RoHS Compliant: Yes
- VR: 7 volts
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-2 00V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching
- Diode Type: Schottky Barrier Diodes
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Supplier: Semikron, Inc.
Description: , besides the capsule (disc) diodes for high power applications. The line offers standard rectifiers with current ratings up to 6000A, fast rectifiers up to 140A, and avalanche rectifiers that allow high voltage rectification up to 5000V with single diodes
- Configuration: Single
- IF: 1000 to 6.00E6 mA
- IFSM: 60 to 60000 amps
- VRRM: 200 to 8000 volts
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Supplier: Hamamatsu Photonics
Description: High sensitivity, low noise 1 ch SPAD for visible and near infrared region S16835-050DG is a TE-cooled single photon avalanche diode. It is available in types with photosensitivity area of ?54 µm, featuring low dark count and high detection efficiency. Features
- CT: 2.8 pF
- Package Type: Other
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Supplier: Hamamatsu Photonics
Description: High sensitivity, low noise 1 ch SPAD for visible and near infrared region S16835-100DG is a TE-cooled single photon avalanche diode. It is available in types with photosensitivity area of ?100 µm, featuring low dark count and high detection efficiency. Features
- CT: 3.2 pF
- Package Type: Other
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Supplier: Hamamatsu Photonics
Description: 1 ch SPAD module (for VIS region) The C11202 series is a photon counting module capable of detecting low light levels. The C11202 series is made up of a thermoelectric cooled single photon avalanche diode (SPAD), an amplifier, a comparator, a high-voltage power supply circuit,
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Supplier: Hamamatsu Photonics
Description: operating voltage and is immune to the effects of magnetic fields. The S14420 series is an MPPC for the visible to near infrared region. It provides higher photon detection efficiency than the previous product (S13360 series) in the visible to near infrared region. Features - High
- CT: 90 pF
- Configuration: Array
- Package Type: Other
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Supplier: Littelfuse, Inc.
Description: The discrete Avalanche diode series comes with a broad variety of packages and breakdown voltages up to 1800V. Improved designs offer in addition to a high rectification performance an excellent surge reverse dissipation capability.
- Diode Type: Avalanche Diodes
- VF: 0.8100 volts
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Supplier: Littelfuse, Inc.
Description: The SLD6S unidirectional TVS Diode series is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against ESD, EFT, 10/1000 surge events and inductive load switching voltage transient events for severe Automotive Load Dump applications.
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS)
- VR: 16 volts
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Supplier: Littelfuse, Inc.
Description: The 5KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Halogen-Free and RoHS compliant Typical maximum temperature coefficient ?VBR = 0.1% — VBR@25°C Glass passivated
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS)
- VR: 220 volts
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Description: MORNSUN high voltage output dc dc converter can provide the output up to 2000VDC, and the power range is from 0.625 to 40W. And the series also features non-isolated, constant current output at 20mA, input under-voltage protection, output short-circuit protection,
- Number of Outputs: 1 #
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 094585-BYT54J Packaging: AMMO PACKAGE Mounting: Through Hole Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.25A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A Reverse
- Diode Type: Avalanche Diodes, Other
- IR: 0.0050 mA
- Tj: -55 to 175 C
- VF: 1.5 volts
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Description: MORNSUN high voltage output dc dc converter can provide the output up to 2000VDC, and the power range is from 0.625 to 40W. And the series also features non-isolated, constant current output at 20mA, input under-voltage protection, output short-circuit protection,
- DC Input Voltage: 4.75 to 5.25 volts
- DC Output Power: 0.7500 watts
- DC Output Voltage: -1250 to 0.0 volts
- Number of Outputs: 1 #
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Supplier: Transtector Systems, Inc.
Description: Transtector SPD component is in the form of Silicon Avalanche Suppression Diode (SASD) and Gas Discharge Tube (GDT). This data line TVSS uses Silicon Avalanche Suppression Diode (SASD) and Gas Discharge Tube (GDT) circuits to protect electronic devices from spikes.
- Device Type: SPD, Dataline and DC Signal, Lightning Arrestor
- Mounting: Wall / Panel / Backboard Mount
- Technology: Silicon Avalanche Diode, Gas Tube
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), 48 Volt Output Rectifiers, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics,
- Applications: Rectifier Diode
- IF: 120000 mA
- Package Type: Other
- trr: 40 ns
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Supplier: Richardson RFPD
Description: High Voltage High Current Miniature Rectifiers|•Small size molded packages|•PRV 1,000 to 12,000 volts|•Fast recovery (R series)|•Avalanche characteristics
- IF: 35000 mA
- Package Type: Other
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: 20 Amps Total Guard-Ring for Stress Protection Low Forward Voltage Guaranteed Reverse Avalanche Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction
- Diode Applications: Rectifier Diode, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 10000 to 20000 mA
- IR: 0.1000 to 6 mA
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Supplier: Transtector Systems, Inc.
Description: against electrical transient surges that are generated both by external lightning events and by internal switching events and supports long-term system reliability by safely shunting high amounts of transient energy while maintaining a very low clamp-ing voltage. Transtector AC surge
- Features: Visual Indicators / LEDs
- Maximum Surge Current: 14000 amps
- Operating Temperature: -40 to 131 F
- Technology: MOV, Silicon Avalanche Diode
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Supplier: RS Components, Ltd.
Description: Versatile and high-efficiency Standard Recovery Power Diodes in industry-standard package styles. Low profile with height of 1mm. Avalanche Rectifier Diode Configuration = Single Maximum Continuous Forward Current = 1.5A Number of Elements per Chip = 1 Peak Reverse
- Diode Type: General Purpose (PN Junction Diodes), Schottky Barrier Diodes
- IF: 1500 mA
- VR: 200 volts
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Supplier: Broadcom Inc.
Description: The Avago TO124EATx is a TO-46 packaged avalanche photodiode (APD) device with a high-gain transimpedance amplifier (TIA) for use in fiber optic communication network applications supporting data rates up to 10.7 Gb/s and link distances up to 80 km. The APD/TIA is mounted into a TO-46
- Laser Type: Laser Diodes
- Operating Temperature Range: -5 to 70 C
- Wavelength Range: 1270 to 1610 nm
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Supplier: Transtector Systems, Inc.
Description: protection against electrical transient surges that are generated both by external lightning events and by internal switch-ing events and supports long-term system reliability by safely shunting high amounts of transient energy while maintaining a very low clamping voltage. Transtector
- 3-Phase Configuration: Wye
- Features: Surge Counter
- Maximum Surge Current: 10000 amps
- Mounting: Wall / Panel / Backboard Mount
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Supplier: RS Components, Ltd.
Description: Versatile and high-efficiency Fast recovery power diodes in industry-standard package styles. Low profile with height of 1mm. Avalanche Rectifier Diode Configuration = Single Number of Elements per Chip = 1 Rectifier Type = Switching Peak Reverse Repetitive Voltage
- Applications: Rectifier Diode, Switching
- Package Type: Other
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 932563-RURD620CCS9A- SB82215P Features: Diode Array 1 Pair Common Cathode Avalanche 200 V 6A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 Speed: Fast Recovery =< 500ns, > 200mA (Io) Package: Reel - TR
- IC Package Type: DPAK (TO-252), Other
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Supplier: MCG SURGE PROTECTION
Description: protection circuits and ten standard voltages are offered to fine tune the protection to your equipment. FEATURES •2, 4, or 8 protected wires •Hybrid or high power silicon avalanche diode technology •Standard Duty or Heavy Duty Capability •DIN rail mountable option •Low
- Applications: Data Acquisition, Network Applications, Telecom Applications, Audio and Video Applications, Medical Facilities, Computer Rooms
- Clamping Voltage: Over 60 volts
- Maximum Surge Current: 10000 amps
- Mounting: DIN Rail, Hard-Wired / Device Mount, In-Line / Integrally Attached
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Supplier: Transtector Systems, Inc.
Description: Transtector SPD component is in the form of Silicon Avalanche Suppression Diode (SASD) and Gas Discharge Tube (GDT). This data line TVSS uses Silicon Avalanche Suppression Diode (SASD) and Gas Discharge Tube (GDT) circuits to protect electronic devices from spikes.
- Mounting: Wall / Panel / Backboard Mount
- Outlets / Connectors: RJ41 / RJ45 / RJ48 Data Jacks
- TVSS Signal Protection: Dataline and DC Signal
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Package Type: Other
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Supplier: TelephoneStuff.com
Description: protection for environments including ISDN, T1, FT1, DDS, analog dial up modems, faxes and more. Additionally, our Custom Products Division provides products for nonstandard or custom applications not included in our standard product offering. Features: - State-of-the-art, avalanche
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Supplier: Richardson RFPD
Description: Features No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Isolated voltage to 2500 V Benefits Outstanding performance at high-frequency operation Direct
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: , the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems. Features 1700V of blocking voltage with low RDS(on) High-speed switching with low capacitances Avalanche ruggedness Fast intrinsic diode with low reverse recovery
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: -55 to 175 C
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uses. The first type of diode is the avalanche diode. This diode conducts in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. Its name comes from the avalanche effect that occurs when the reverse electric field across the P-N junction (read more)
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VMI offers a complete line of high voltage, hermetically sealed diodes for tough applications when an epoxy or plastic diode can’t withstand the environment. (read more)
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offer extensive testing to insure that our customers receive the highest quality diodes possible. Hermetically sealed glass high voltage diodes are processed per MIL-PRF-19500, MIL_STD-750, and the application slash sheets, /575,/576, and /577 (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
us for more information. About VMI... Established in 1980, VMI has years of experience in high voltage design. We specialize in high voltage diodes, power supplies, optocouplers, multipliers and related (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Inc... Established in 1980, VMI has years of experience in high voltage design —specializing in high voltage diodes, power supplies, optocouplers, multipliers and related assemblies (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
VMI manufactures a commercial 1N6535 high voltage diode, and two military versions - the JANTX1N6535 and JANTXV1N6535. VMI's 1N6535 diode is an axial (read more)
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The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
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specializes in high voltage diodes, power supplies, optocouplers, multipliers and related assemblies. Our products are custom designed for military, industrial, medical, aerospace and other high-reliability applications operating at the leading edge of technology. Established in 1980, VMI has (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
VMI specializes in high voltage diodes, optocouplers, power supplies, multipliers and related assemblies. Our products are custom designed for military, industrial, medical, aerospace and other high-reliability applications operating at the leading edge of (read more)
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Generation Of Sub-nanosecond Pulses Using A Solid State Marx Circuit With Trapatt Diode Switches
…in a short period of time compared to the saturated carrier drift time Soviet technology has demonstrated this performance in both GaAsand Si p+-n-n+ diodes The scaling-of the conduction area in high voltage avalanche diodes has been investigated by…
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Compact megawatt subnanosecond impulse generators using conventional electronic components
The scaling of the conduction area in high voltage avalanche diodes has also been investigated y the loffe group.
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ArDM: a ton-scale LAr detector for direct Dark Matter searches
Each capacitor in the Cockroft-Walton scheme is made out of four (two) 82 nF metallized film polypropylene capacitors in parallel for stages 1 to 170 (171 to 210) and each diode is realized by three high voltage avalanche diodes in series.
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Littelfuse Varistor Design Examples (.pdf)
High voltage avalanche diodes are effective but expensive.
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CR4 - Thread: Avalanche Diode
High voltage avalanche diodes are also used in high voltage rectifier applications where multiple diodes are required in series because a single diode can not be sourced for the job.
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ArDM: a ton-scale LAr detector for direct Dark Matter searches
Each capacitor in the Cockroft-Walton scheme is made out of four (two) 82 nF metallized film polypropylene capacitors in parallel for stages 1 to 170 (171 to 210) and each diode is realized by three high voltage avalanche diodes in series.
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System Level ESD Protection
In the alternative, the high holding voltage avalanche diode , the final clamp is assembled as a multi-finger diode array (Fig. 3.33a).
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ESD Design for Analog Circuits
3.5.3 High - Voltage Avalanche Diodes . . . . . . . . . . . . . .
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BEST OF SOVIET SEMICONDUCTOR PHYSICS AND TECHNOLOGY (1989-1990)
high - voltage avalanche diode structures", Sov. Phys. Tech. Phys.
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Switching avalanche S-diodes based on GaAs multilayer structures
This work presents results of studying characteris tics of high voltage avalanche S diodes based on new multilayer structures, simultaneously doped with Cr and Fe and diodes based on Cr doped structures.