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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports
- Features: Other
- Package Type: SOT23
- Packing Method: Tape Reel
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39
- IC(max): 30 to 200 milliamps
- VCEO: 300 volts
- VCBO: 300 volts
- fT: 100 MHz
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Supplier: Newark, An Avnet Company
Description: High Voltage PNP Bipolar Transistor / REEL
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Output Power: 300 watts
- Power Gain: 17 dB
- Operating Frequency: 0 to 45 MHz
- Transistor Type: MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a SOT23 plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General purpose
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: PNP high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BF722 Features and benefits Low feedback capacitance Applications General purpose high voltage circuits
- Features: Other
- Polarity: PNP
- Package Type: SOT223
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Supplier: Utmel Electronic Limited
Description: High Voltage PNP Bipolar Transistor
- IC(max): 150 milliamps
- VCEO: 300 volts
- PD: 150 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BF723-Q Features and benefits Low feedback capacitance Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General purpose
- Features: Other
- Package Type: SOT223
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Supplier: Nexperia B.V.
Description: PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA42 Features and benefits Low current (max. 100 mA) High voltage (max. 300 V) Applications Telephony Professional communication equipment
- Features: Other
- Polarity: PNP
- Package Type: SOT23
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression point OP1dB = 13 dBm @
- Features: Other
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: High Voltage, High Current Darlington Transistor Array, SOIC16, Pb-Free
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Supplier: Allied Electronics, Inc.
Description: High Voltage, High Current Darlington Transistor Array, PDIP16, Pb-Free
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: TO-251 / TO-252
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, NPN, 600V, DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:600V; DC Collector Current:2A; Power Dissipation Pd:50W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 225mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open
- IC(max): 50 milliamps
- VCEO: 12 volts
- Power Gain: 30 dB
- Noise Figure: 1 dB
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, NPN, 600V, DPAK, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:600V; Continuous Collector Current:2A; Power Dissipation:50W; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 20 @ 110mA, 8V Maximum Power Dissipation: 3W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Operating: 175°C (TJ) Case / Package: SOT-323-3 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 60 @ 15mA, 5V Maximum Power Dissipation: 300mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open
- Polarity: NPN
- Features: Other
- Package Type: SOT3, SOT323
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V Typical Gain (hFE) (Min): 110 @ 30mA, 3V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: Allied Electronics, Inc.
Description: No PNP Silicon High Voltage Transistor, TO-92 Package, -500 mADC Collector Current
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, High Voltage Horizontal Deflection Output, 800 V Collector to Emitter Voltage
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Supplier: ROHM Semiconductor GmbH
Description: Products are available in lineup, developed focusing on energy-saving and high reliability as main concepts and featuring distinctive characteristics.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Utmel Electronic Limited
Description: ST13007D Series NPN 400V 8 A High Voltage Fast-Switching Power Transistor-TO-220
- Polarity: NPN
- Features: Other
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Supplier: Emhiser Research, Inc.
Description: amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom
- Frequency Range: 1,435 to 2,400 MHz
- Minimum Gain: 1.5 dB
- Maximum Gain: 1.5 dB
- Input VSWR: 1 :1
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Supplier: Newark, An Avnet Company
Description: TRANS, DARLINGTON, HIGH V & I; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:25W; DC Collector Current:500mA; DC Current Gain hFE:600hFE; Transistor Case Style:SOIC; No. of Pins:16Pins; RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor High Voltage
- Features: Bipolar RF Transistors
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: HIGH VOLTAGE TRANSISTORS NPN SIL
- IC(max): 600 milliamps
- VCEO: 160 volts
- Operating Frequency: 100 MHz
- Output Power: 0.35 watts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN Silicon Power Transistors High Voltage Planar Product overview: MJW18020 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- Features: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: MOSFET >1200V High Voltage Power MOSFET
- rDS(on): 2 ohms
- QG: 105.99999999999999 nC
- PD: 890,000 milliwatts
- TJ: -55 to 150 C
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Supplier: RS Components, Ltd.
Description: PNP High-Voltage Amplifier Transistor
- Features: General Purpose BJT, Other
- Polarity: PNP
- Package Type: SOT323
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Supplier: Integra Technologies, Inc.
Description: Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070″ (27.18mm), L=0.385″ (9.78mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Power Gain: 12 dB
- Operating Frequency: 2,998 MHz
- Output Power: 500 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: HIGH VOLTAGE TRANSISTOR
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
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Supplier: Integra Technologies, Inc.
Description: With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.070″ (27.17mm), L=0.400″ (20.30mm) ■ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Power Gain: 16 dB
- Output Power: 400 watts
- Operating Frequency: 1,030 to 1,090 MHz
- Transistor Type: MOSFET RF Transistors
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Featured Products Top
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Overview of RF High?Speed Rotary Joint Slip Ring Our high?speed radio frequency rotary joints are precision coaxial microwave components designed for 360° uninterrupted rotating equipment, solving stable high?frequency signal transmission challenges in rotating (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
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Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
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RF Power: GaN Moves In for the Kill
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote
More Information Top
Indicates content that may require registration and/or purchase.
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http://www.nxp.com/documents/selection_guide/75016687.pdf
High Voltage RF power transistor driver for broadcast / ISM .
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http://www.nxp.com/documents/selection_guide/75016952.pdf
High Voltage RF Power transistor for broadcast/ISM .
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http://www.scirp.org/journal/PaperDownload.aspx?DOI=10.4236/jmp.2012.38115
[1] T. Tanaka, K. Takano, T. Mishima, Y. Kohji, Y. Otoki and T. Meguro, “GaN Epitaxial Wafers for High Break- down Voltage RF Transistor Applications,” Hitachi Ca- ble Review, No. 24, 2005, pp. 11-14.
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CMOS versus SiGe BiCMOS, for RF transceivers design
A large variety of active and passive devices is needed, from digital low voltage CMOS to high voltage RF power transistors and from high density capacitors to high-Q inductors, so several types of processes need to be used and the chips …
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RF bipolar transistors in CMOS compatible technologies
Gradinaru et. al., “ High Voltage RF SiliconBipolar Transistor ,”in Proc. IEEE ISPSD, 1999,pp.
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A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications
[5] D. Gradinaru et. al., “ High Voltage RF Silicon Bipolar Transistor ,” in Proc. IEEE ISPSD, 1999, pp. 293-296.
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High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
The integration of RF LDMOS transistors with high voltage capability enables dc/dc converter designs with high switching frequencies up to several 10 MHz.
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Integration of a 50 V BVCEO SiGe:C HBT into a 0.25 μm SiGe:C BiCMOS platform
which gives a BVCEO*fT product for the 5x10 LDHBT array of 200 VGHz which is in good accordance with the Johnson limit as criterion for the RF performance of high voltage transistors . fT increases as long as VBE < 0.76 V.
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New vertical silicon microwave power transistor structure and package with inherent thermal self protection
Index Terms —Flip-chip RF power transistor , High Voltage power transistor, Silicon Power Transistor, Ruggedness, Vertical RF transistor .
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Concept of vertical bipolar transistor with lateral drift region, applied to high voltage SiGe HBT
The chosen approach enables the fabrication of high voltage bipolar transistors for RF power applications alternatively to the construction of deep collector wells in vertical direction by an extra epitaxy step or ion implantation with very high energy.