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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN18
- Package Type: SOT89, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN39
- Package Type: SOT223, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // PZTA42
- Package Type: SOT223, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // High Voltage Transistor // BFN38
- Package Type: SOT223, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: High Voltage PNP Bipolar Transistor
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The ARF300 is a N-CHANNEL RF power transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The transistor is well matched to the ARF301 P-CHANNEL
- Operating Frequency: 0.0 to 45 MHz
- Output Power: 300 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Richardson RFPD
Description: The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation.
- Operating Frequency: 0.0 to 45 MHz
- Output Power: 300 watts
- Package Type: Other
- Power Gain: 16 dB
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Supplier: Richardson RFPD
Description: The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
- Operating Frequency: 0.0 to 150 MHz
- Output Power: 900 watts
- Package Type: Other
- Power Gain: 16 dB
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Supplier: Richardson RFPD
Description: The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
- Operating Frequency: 30 to 150 MHz
- Output Power: 900 watts
- Package Type: Other
- Power Gain: 15 dB
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Transistor High Voltage
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor High Voltage
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT High voltage fast-switching pnp power transistor
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: HIGH VOLTAGE TRANSISTORS NPN SIL
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-143 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 30 @ 5mA, 5V Maximum Power Dissipation: 225mW Is this a common-used part?: Yes Popularity:
- Package Type: SOT3, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: Use Under Class AB Operation ¦ Metal Based Package Sealed With Ceramic-Epoxy Lid ¦ Gold Metallization System: Chip - Wire Bond - Package ¦ Package Size: W=1.070? (27.18mm), L=0.400? (10.16mm) ¦ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Operating Frequency: 2856 MHz
- Output Power: 500 watts
- Package Type: Other
- Power Gain: 11.8 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ Specified For Use Under Class AB Operation ¦ Metal Based Package Sealed With Ceramic-Epoxy Lid ¦ Gold Metallization System: Chip - Wire Bond - Package ¦ Package Size: W=1.070? (27.18mm), L=0.385? (9.78mm) ¦ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Operating Frequency: 2998 MHz
- Output Power: 500 watts
- Package Type: Other
- Power Gain: 12 dB
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Supplier: Win Source Electronics
Description: Temperature Range - Operating: 175°C (TJ) Case / Package: TO-236AB (SOT23) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 5mA, 6V Maximum Power Dissipation: 360mW Is this a common-used part?: Yes Popularity: High
- Noise Figure: 1.4 dB
- Operating Frequency: 8000 MHz
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
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Description: HIGH VOLTAGE TRANSISTOR PNP
- Packing Method: Bulk Pack, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 201149-BFG196 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9dB to 14.5dB Frequency - Transition: 7.5GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2.3dB @ 900MHz to 1.8GHz Family Name
- IC(max): 150 milliamps
- Noise Figure: 1.3 dB
- Operating Frequency: 7500 MHz
- PD: 800 milliwatts
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Supplier: Acme Chip Technology Co., Limited
Description: HIGH VOLTAGE TRANSISTOR
- Packing Method: Bulk Pack, Other
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Supplier: Emhiser Research, Inc.
Description: customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 240558-MRF151G Packaging: Tray Voltage Rating: 125V Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 16dB Transistor Polarity: 2 N-Channel (Dual) Common Source Voltage - Test
- Operating Frequency: 175 MHz
- Output Power: 300 watts
- Package Type: SOT3, Other
- Packing Method: Tray, Other
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled
- IC(max): 1000 to 20000 milliamps
- Package Type: TO-3, TO-39, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Other
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Supplier: Wolfspeed
Description: The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed
- Operating Frequency: 1805 to 1880 MHz
- Output Power: 120 watts
- Package Type: Other
- Power Gain: 15.5 dB
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Supplier: Linear Systems
Description: The LS301 Series High Voltage, Super Beta, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP301, MP302, MP303 Series. It is ideal for Small Signal Transistors, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS,
- Package Type: Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: PNP high-voltage transistor
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: PNP
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled
- Operating Frequency: 25 to 100 MHz
- Polarity: NPN
- Transistor Grade / Operating Range: Other
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Supplier: Nexperia B.V.
Description: NPN transistor in a SOT23 plastic package. PNP complement: BCX17. Features and benefits High current (500 mA) Low voltage (45 V). AEC-Q101 qualified Applications General purpose amplification Saturated switching and driver applications.
- Package Type: SOT23, Other
- TJ: 150 C
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Package Type: Other
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP
- IC(max): -20 to 20 milliamps
- Number of Transistors in the Chip: 4
- Operating Frequency: 325 to 350 MHz
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: The ARF family of RF power MOSFETs is optimized for applications requiring frequencies as high as 150 MHz and operating voltages as high as 400V. Historically, RF power MOSFETs were limited to applications of 50V or less. This limitation has been removed by
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: Under Class AB Operation ¦ Metal Based Package Sealed With Ceramic-Epoxy Lid ¦ Gold Metallization System: Chip - Wire Bond - Package ¦ Package Size: W=1.340? (34.04mm), L=0.385? (9.78mm) ¦ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Toshiba America, Inc.
Description: MOSFETs. Its main products include the mid- to high-voltage DTMOS Series with a VDSS of 500V to 800V and the low-voltage U-MOS Series with a VDSS of 12V to 250V.
- Transistor Grade / Operating Range: Industrial, Automotive
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Qorvo
Description: Qorvo's SZM-5066Z is a high-linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost, surface-mountable, plastic QFN multi-chip module package. The SZM-5066Z is designed for 802.11a/n in the 4.9GHz to 5.85GHz bands and can operate from a single
- Amplifier Type: Power Amplifier
- Frequency Range: 5100 to 5900 MHz
- Maximum Gain: 33 dB
- Minimum Gain: 33 dB
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
, is based on the so-called Gigaprocessor-a proprietary chip said to operate in excess of 1-GHz in performance. Consisting of more than 170 million transistors, the Gigaprocessor is optimized for both commercial and technical applications. Atmel offers SiGe RF circuits for walkie-talkies, remote
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Indicates content that may require registration and/or purchase.
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http://www.nxp.com/documents/selection_guide/75016687.pdf
High Voltage RF power transistor driver for broadcast / ISM .
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http://www.nxp.com/documents/selection_guide/75016952.pdf
High Voltage RF Power transistor for broadcast/ISM .
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http://www.scirp.org/journal/PaperDownload.aspx?DOI=10.4236/jmp.2012.38115
[1] T. Tanaka, K. Takano, T. Mishima, Y. Kohji, Y. Otoki and T. Meguro, “GaN Epitaxial Wafers for High Break- down Voltage RF Transistor Applications,” Hitachi Ca- ble Review, No. 24, 2005, pp. 11-14.
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CMOS versus SiGe BiCMOS, for RF transceivers design
A large variety of active and passive devices is needed, from digital low voltage CMOS to high voltage RF power transistors and from high density capacitors to high-Q inductors, so several types of processes need to be used and the chips …
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RF bipolar transistors in CMOS compatible technologies
Gradinaru et. al., “ High Voltage RF SiliconBipolar Transistor ,”in Proc. IEEE ISPSD, 1999,pp.
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A novel SOI lateral bipolar transistor with 30GHz f/sub max/ and 27V BV/sub CEO/ for RF power amplifier applications
[5] D. Gradinaru et. al., “ High Voltage RF Silicon Bipolar Transistor ,” in Proc. IEEE ISPSD, 1999, pp. 293-296.
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High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
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Integration of a 50 V BVCEO SiGe:C HBT into a 0.25 μm SiGe:C BiCMOS platform
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New vertical silicon microwave power transistor structure and package with inherent thermal self protection
Index Terms —Flip-chip RF power transistor , High Voltage power transistor, Silicon Power Transistor, Ruggedness, Vertical RF transistor .
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Concept of vertical bipolar transistor with lateral drift region, applied to high voltage SiGe HBT
The chosen approach enables the fabrication of high voltage bipolar transistors for RF power applications alternatively to the construction of deep collector wells in vertical direction by an extra epitaxy step or ion implantation with very high energy.