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Supplier: Elite Semiconductor Products, Inc.
Description: High Voltage Power Diodes Standard and Ultra-Fast
- VF: 12 volts
- IF: 500 mA
- IR: 0.0005 mA
- trr: 40 ns
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Supplier: Littelfuse, Inc.
Description: Littelfuse DURF840 series Ultrafast Recovery Rectifier is designed to meet the general requirements of commercial applications by providing low Trr, high-temperature, low-leakage and low forward voltage drop products. It is suitable for output rectifier, free-wheeling or boost
- VF: 1.3 volts
- IF: 8,000 mA
- IFSM: 80 amps
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: Utmel Electronic Limited
Description: AUTOMOTIVE-GRADE ULTRAFAST DIODE
- VF: 2.95 volts
- IF: 180,000 mA
- VR: 600 volts
- IR: 0.04 mA
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Diodes - Diode, Ultrafast, 30A, 1000V; Repetitive Peak Reverse Voltage Stmicroelectronics -- 26M3771Supplier: Newark, An Avnet Company
Description: DIODE, ULTRAFAST, 30A, 1000V; Repetitive Peak Reverse Voltage:1kV; Average Forward Current:30A; Diode Configuration:Single; Forward Voltage Max:1.3V; Reverse Recovery Time:42ns; Forward Surge Current:180A; Diode Case Style:TO-220AC RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: DIODE, ULTRAFAST, 8A, 1000V; Repetitive Peak Reverse Voltage:1kV; Average Forward Current:8A; Diode Configuration:Single; Forward Voltage Max:1.3V; Reverse Recovery Time:47ns; Forward Surge Current:60A; Diode Case Style:TO-220 RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: DIODE, ULTRAFAST, 3A, 600V; Repetitive Peak Reverse Voltage:600V; Average Forward Current:3A; Diode Configuration:Single; Forward Voltage Max:1.7V; Reverse Recovery Time:35ns; Forward Surge Current:55A; Diode Case Style:DO-201AD RoHS Compliant: Yes
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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Features: Other, PIN Diodes, Switching
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses Low
- Applications: High Voltage
- Features: Other, Schottky Barrier Diodes
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Supplier: Utmel Electronic Limited
Description: Rectifiers Ultrafast Recovery 6000V 12pF Diode
- VF: 1.75 volts
- VR: 600 volts
- IR: 0.04 mA
- trr: 40 ns
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Features: Other, Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Features: Other, Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Features: Other, Rectifier Diode
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Supplier: Elite Semiconductor Products, Inc.
Description: High Voltage Power Diodes Standard and Ultra-Fast
- VF: 10 volts
- IF: 500 mA
- IR: 0.0003 mA
- VRRM: 10,000 volts
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6620 THROUGH 1N6625 AND U SUFFIX VERSIONS, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY , HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JAHTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, HIGH-VOLTAGE, POWER RECTIFIER 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JANTX, JANTXV, AND JANS
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: High temperature metallurgically bonded construction Glass apssivated cavity-free junction Superfast recovery time for high efficiency Ultrafast recovery time for high efficiency Low voltage forward, high current capability Hermetically sealed
- VF: 1.25 volts
- IF: 2,000 mA
- IR: 0.01 to 0.2 mA
- trr: 50 ns
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- VF: 0.975 volts
- VR: 50 volts
- IO: 70 amps
- IFSM: 800 amps
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Supplier: Nexperia B.V.
Description: High power density, ultrafast switching time recovery rectifier with high-efficiency planar technology, encapsulated in D2PAK Real-2-Pin (SOT8018). Features and benefits Reverse voltage VR ≤ 650 V Forward current IF ≤ 15 A Typical switching time trr of 27 ns Pt doped life
- VF: 1,680 to 1.68 volts
- IF: 21,000 mA
- VR: 650 volts
- IR: 5,000 mA
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Supplier: Nexperia B.V.
Description: High power density, ultrafast switching recovery rectifier with high-efficiency planar technology, encapsulated in D2PAK Real-2-Pin (SOT8018). Features and benefits Reverse voltage VR ≤ 650 V Forward current IF ≤ 20 A Typical switching time trr of 32 ns Pt doped life time
- VF: 1,700 to 1.7 volts
- IF: 28,000 mA
- VR: 650 volts
- IR: 5,000 mA
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Supplier: Rochester Electronics
Description: Ultrafast recovery - high voltage diode
- Diode Applications: High Voltage
- Features: Other, Step-recovery Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: VAST STOCK CO., LIMITED
Description: Rectifiers Ultrafast recovery high voltage diode
- Features: Other, Rectifier Diode
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Supplier: Radwell International
Description: DIODE, ULTRAFAST, 8A, 1000V, DIODE CONFIGURATION SINGLE, REPETITIVE REVERSE VOLTAGE VRRM MAX 1KV, FORWARD CURRENT IF(AV) 8A, FORWARD VOLTAGE VF MAX 1. FREE 2 YEAR RADWELL WARRANTY
- Features: General Purpose (PN Junction Diodes)
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Supplier: RS Components, Ltd.
Description: Rectifier 15A 600V Ultrafast TO-220FPAC
- trr: 55 ns
- Features: High Voltage, Other, Rectifier Diode, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
- Package: TO-220
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Description: 600 V, 5 A Ultrafast Diode
- VF: 1.85 volts
- VR: 600 volts
- Package: DPAK
- Features: Other, Rectifier Diode
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Supplier: PUI - Projections Unlimited, Inc.
Description: High Voltage, High Current Ultra-fast Recovery Silicon Rectifier Diodes
- VR: 1,800 volts
- IFSM: 100 amps
- Features: Rectifier Diode
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Supplier: Richardson RFPD
Description: 50 ns Ultra-Fast Recovery High Voltage Rectifier Diodes|•PRV to 5,000 Volts|•50 ns ultra-fast recovery|•Small size|•Exceptionally low leakage|•High surge capability|•Avalanche characteristics
- IF: 8,000 mA
- trr: 50 ns
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- Features: Other, Rectifier Diode
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Supplier: Allied Electronics, Inc.
Description: Schottky Barrier Silicon Rectifier Diode, 15 mA Forward Current 15 mA forward current The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: High Voltage Ultrafast Rectifier Diode Product overview: STTH112 from STMicroelectronics is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and
- Tj: -50 C
- IO: 1 amps
- Features: Other, Rectifier Diode
- RoHS Compliant: RoHS Compliant
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Supplier: Allied Electronics, Inc.
Description: Features: Plastic Package Has Underwriters Laboratories Flammability Classification 94V-0 Ideally Suited for Use In Very High Frequency Switching Power Supplies, Inverters and as a Free Wheeling Diode Ultrafast Recovery Time for High Efficiency Excellent High
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low
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Supplier: Allied Electronics, Inc.
Description: Features: Glass Passivated Chip Junction Ultrafast Reverse Recovery Time Low Forward Voltage Drop Low Switching Losses, High Efficiency High Forward Surge Capability Solder Dip 260°C, 40 s Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications: For
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: High temperature metallurgically bonded construction Glass apssivated cavity-free junction Superfast recovery time for high efficiency Ultrafast recovery time for high efficiency Low voltage forward, high current capability Hermetically sealed
- VF: 0.95 volts
- IF: 3,000 mA
- IR: 0.005 to 0.05 mA
- trr: 35 ns
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Supplier: Richardson RFPD
Description: Features High integration level of Rectifier, PFC and Inverter High-efficiency Input Rectifier Wide input voltage range rated PFC Dual PFC with high efficiency, fast IGBT H5 + ultra-fast Si Diode High efficiency H-Bridge inverter with fast IGBT H5
- Features: IGBT, Other
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The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
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Voltage Multipliers, Inc. offers the most complete range of high voltage diodes in the world. All wafers are doped, diffused and metalized in our facility in Visalia, California. Our extensive testing insures that our customers receive the highest quality diodes possible (read more)
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VMI manufactures a commercial 1N6535 high voltage diode, and two military versions - the JANTX1N6535 and JANTXV1N6535. VMI's 1N6535 diode is an axial (read more)
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offer extensive testing to insure that our customers receive the highest quality diodes possible. Hermetically sealed glass high voltage diodes are processed per MIL-PRF-19500, MIL_STD-750, and the application slash sheets, /575,/576, and /577 (read more)
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Spike Suppression in a Bidirectional High-Frequency Transformer-Link Inverter Using a Regenerative Snubber
The active rectifier is constructed using the IRG4PH40K IGBT and STTA1212D ultrafast high voltage diode .
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Building-in reliability technology for diodes manufacturing
Reliability technologies for other products of Baneasa SA, such as: gate sensitive thyristors, high voltage switching transistors, ultrafast high voltage diodes .
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On the Use of Front-End Cascode Rectifiers Based on Normally On SiC JFET and Si MOSFET
The proposed cascode rectifier based on SiC JFET behaves slightly worse than a high - voltage ultrafast diode , regarding the maximum reverse peak value and the reverse recovery time.
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STTH3010W STMicroelectronics | Mouser
Description: Rectifiers Ultrafast recovery high voltage diode .