Products/Services for Hitachi Lateral MOSFET
-
Power MOSFET - (239 companies)...the construction of a power MOSFET. "Vertical" refers to the fact that, unlike traditional (or "lateral") MOSFETs, a power MOSFET's source terminal is above its drain terminal, resulting in a primarily vertical current. By contrast, a lateral MOSFET's source...TechnologyPolarityOperating Mode -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Metal... -
Gate Drivers - (222 companies)Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). With power-MOSFETs, gate drivers can be implemented as transformers, discrete... -
AC-DC Converter Chips - (123 companies)AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). How to Select AC to DC Converter Chips. Image Credits: Digi-Key Corporation and Texas Instruments. AC DC converter... -
Six-axis Force and Torque Sensors - (18 companies)Six-axis force and torque sensors measure the full six components of force and torque: vertical, lateral, and longitudinal forces as well as camber, steer, and torque movements. Six-axis force and torque sensors provide electrical outputs as analog...
-
Fiber and Web Guiding Systems - (37 companies)Web guiding systems provide precise lateral positioning for web-fed material. Typically, these web systems include sensors, controllers, guide rolls, drives, and actuators. Web Guiding Systems Information. Web guiding systems provide precise lateral...
-
Transistors - (919 companies)Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
-
Connector Plates - (23 companies)Connector plates have integral teeth, are manufactured to various sizes and thicknesses, and are designed to laterally transmit loads in wood. They are also known as nail plates, truss plates, metal connector plates, and foundation wall angles. Nail...
-
Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
Product News
-
Nexperia B.V.
DFN0603 MOSFETs Nexperia's new package DFN0603, the market's smallest DFN packaged MOSFET. This new ultra-small package allows designers to achieve more performance in a smaller footprint, with a 74% reduction in RDS(on) as well as using 13% less space when comparing to the industry's next smallest package (DFN0604). These benefits mean the package is the perfect fit for next generation portables, wearables and mobile devices. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia B.V.
LFPAK56D Power MOSFETs Packing even more into the power-SO8 footprint, the LFPAK56D fits 2 MOSFETs into one robust package without compromising on performance. Allowing customers to optimise their design and apply tighter tolerance in operation. Ideal for space constrained applications, such as portable power tools, and hand-held appliances. (read more) -
Win Source Electronics
FDS6681Z MOSFET for Power Control Looking for a reliable MOSFET for efficient power and load management?. The FDS6681Z N-channel MOSFET is designed for low- to medium-voltage power systems where efficiency, thermal stability, and reliable switching are critical. Its low RDS(on) helps reduce conduction losses and heat generation, while moderate gate drive requirements simplify integration into power management and control circuits. Key Features: Low RDS(on) for reduced power loss. Efficient load switching and power path control... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
New Yorker Electronics Co., Inc.
New High Efficiency MOSFETs Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous generations. Built on E Series superjunction technology, the SiHK050N65E features a typical on-resistance of just 0.048 O at 10 V, enabling higher power ratings for applications exceeding 6 kW. With 50... (read more) -
Win Source Electronics
High-Popularity MOSFET - BSS123NH6327XTSA1 Infineon Technologies BSS123NH6327XTSA1 is an OptiMOS TM product suitable for various discrete semiconductor applications. Detailed Description: Operating Temperature Range: -55 C to 150 C (TJ). Package: TO-236-3, SC-59, SOT-23-3. Max Gate-Source Voltage: +-20V. Max Input Capacitance: 5305pF @ 13V. Features: N-Channel MOSFET, surface mount. High-popularity product, balanced supply and demand. Suitable for discrete semiconductor products. Applications: Communication equipment. Power management... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Nexperia B.V.
Nexperia CCPAK Power MOSFETs Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Win Source Electronics
2N7002ET1G N-Channel MOSFET Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features. Drain-Source Breakdown Voltage: 60V. Continuous Drain Current: 260mA at 25 C. Gate-Source Threshold Voltage: 2.5V @ 250 mA. Maximum Rds On: 2.5 Ohm @ 240mA, 10V. Max Gate Charge: 0.81nC @ 5V. Max Input Capacitance: 26.7pF @ 25V. Fast Switching Speed: Turn-on delay time of 3ns, Turn-off... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Richardson RFPD
Wolfspeed Gen 4 MOSFETs Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage DC/DC converters, and more. Based on a new technology generation, Wolfspeed 's 1200 V SiC MOSFETs include a range of on-resistance options that enable designers to select the right part for their applications. Why Industrial... (read more)Browse Power MOSFET Datasheets for Richardson RFPD -
New Yorker Electronics Co., Inc.
N-Channel MOSFETs Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4m O N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and minimized gate charge, enhancing efficiency and power density. Its high repetitive avalanche rating ensures durability and reliability in challenging environments, making it a preferred choice for power... (read more) -
Nexperia B.V.
DSN small-signal MOSFETs We recently announced the launch of our two new DSN packages, DSN1006 & DSN1010. These new ultra-compact wafer-level packages provide designers more flexibility of choice within mobile and portable applications. With RDS(on) up to 25% better than competing devices in the market, the packages minimise energy losses, increase efficiency and reduce self heating thereby being the optimum solution for wearable devices. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
More Information
Indicates content that may require registration and/or purchase.
-
Two-stage 48 V power pod exploration for 64-bit microprocessor
Hitachi D8-L series Device Lateral MOSFET .
-
Radiation effects on UHF power MOSFETs
I. Takei and M. Ikeda are with the Space Systems Division, Hitachi Ltd., Totsukaku,Yokohama 244, Japan … However, no studieshave reported on the radiation effectsof lateral , high-frequency, high-power MOSFETs .
-
Power ICs in the saddle
The best power switch technolo- gy in this case has been found to be later- al MOSFETs and insulated-gate bipolar transistors formed using the Resurf princi- ple to obtain breakdown voltages of up to 1200 V. … duce the surface electric field, several companies have been developing power ICs, including Hitachi , Philips, Mit- subishi …
-
MRS Online Proceedings Library - Characterization and Application of Laser Induced Seeded-Lateral Epitaxtal Si Layers on SiO2 - Cambridge Journals Online
a1 Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan Electrical and crystal properties of seeded lateral epitaxial Si are evaluated as a function of distance from seeding area with the aid of a micro-probe RHEED and MOSFET fabrication. the results indicate that the quality of a grown layer is as …
-
Lateral SPE recovery of implanted source/drain in thin SOI MOSFETs
Lateral SPE Recovery of Implanted Sourcemrain in Thin SO1 MOSFETs Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185-8601, Japan e-mail: m-horiu@crl.hitachi.co.jp …
-
A 30-V, 75-m/spl Omega/*mm/sup 2/ power MOSFET for intelligent driver LSIs
** SemiconductorDesign & Development Center, Hitachi , Ltd., Takasaki, Gunma 370, Japan, Phone(0273)52-2111,Fax(0273)53 … An extremely low on-resistance Lateral DSA MOSFET (LDM0S) is developed for intelligentdriver LSIs.
-
Modeling and Simulation -- Compact Modeling
The fifth paper by Roy, et al., (EPFL) describes a noise model for lateral asymmetric MOSFETs . … of this session) is an invited paper by Ishibashi, et al., (Renesas and Hitachi ) on circuit technologies …
-
Concepts of siliziumbasierter MO-building elements
On the one hand, Japan was this group S. Nishimatsu et al.116 Laboratory of the Hitachi Ltd. of the Central Research to others were this B. K. Ahuja and A. R. Boothroyd of the Canadian Carleton University in Ottawa [76 Ahuj … S. Debated et al. Nishimatsu its concept under the title "Grooved gate MOSFET " on the SSDM … … by a "Buried gate" - the channel structure of which is folded about a lateral MOSFET, gate-structure …
-
http://dspace.mit.edu/bitstream/handle/1721.1/87329/52060481-MIT.pdf?sequence=2
RF LDMOSFET ( Lateral Double Diffused MOSFET ) power ampli- fiers have been particularly successful for PAs in Global System Mobile (GSM), the most widespread cellular telephone standard. LDMOSFET development work took place mostly in companies, foremost being Hitachi and Motorola.
-
Low on-resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficient DC/DC converters
Low on-resistance and low feedback-charge, lateral power MOSFETs with multi-drain regions for high-efficient DC/DC converters Hitachi Research Laboratory, Hitachi, Ltd., (MD#253) 7-1-lYOmika-cho,Hitachi-shi, Ibaraki319-1292,Japan .
