Products/Services for Hix N 800
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Junction Field-Effect Transistors (JFET) - (94 companies)Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Junction field effect transistors (JFET... -
Varactor Diodes - (73 companies)Varactor diodes are p-n junction diodes that are designed to act as a voltage controlled capacitance when operated under reverse bias. Description. Varactor diodes are two-terminal electronic components that are designed to provide... -
Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)...oxide semiconductor field-effect transistors (MOSFET) are commonly used in microprocessors and related technologies for amplifying or switching signals. N- and p-type MOSFET symbols, showing the terminals described below. Image credit: CircuitManiac... -
FireWire® Cables - (67 companies)...specification of 400 Mbit/s. By using a 6-pin to 9-pin adapter, IEEE 1394a cables can plug into 1394b ports; however, the speed remains 400 Mbit/s. FireWire 800 cables double the transmission speed of the original interface and increase the maximum...
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Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals... -
Small-Signal Bipolar Transistors (BJT) - (157 companies)Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Small signal bipolar junction...
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Power Diodes - (85 companies)Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat. Power diodes can also withstand high voltage diodes when operated...
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Tunnel Diodes - (17 companies)Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most...
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Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters...
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PIN Diodes - (93 companies)PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode...
Product News
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Micro-Epsilon Group
Capacitive Measurement at up to 800 °C The capacitive sensor system capaNCDT 6228 consists of the capacitive high temperature sensors capaNCDT CSE/HT and the capaNCDT 6228 controller. The sensor system is designed for high temperature applications up to +800 C. It is used, among other things, to measure the thickness of glowing brake discs and to monitor the level of float glass. Up to four sensors can be connected to the high-performance controller simultaneously. The available sensors cover measuring ranges from 1 mm up to 20 mm... (read more)Browse Capacitive Linear Position Sensors Datasheets for Micro-Epsilon Group -
Xiamen Innovacera Advanced Materials Co., Ltd.
Silicon Nitride (Si?N?) Substrates Innovacera 's Silicon Nitride (Si?N?) Substrates combine exceptional thermal conductivity, high mechanical strength, and excellent fracture toughness, providing outstanding reliability for high-power electronic and thermal management applications. With a thermal expansion coefficient closely matched to silicon and superior resistance to thermal shock, these substrates maintain stable performance under extreme conditions. Their precision-engineered surfaces and customizable specifications make... (read more)Browse Thermal and Refractory Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
Xiamen Innovacera Advanced Materials Co., Ltd.
Silicon Nitride (Si?N?) Substrates ideal for IGBT power modules, high-power heat sinks, and advanced wireless modules. Features. High thermal conductivity. Thermal expansion coefficient close to silicon wafer. High strength and toughness. Application. High power IGBT power module. High power heat sink. Wireless module. Material Properties Table. Project. Test conditions. Unit. Si?N?. SN-90. Material. Si?N?. Appearance. grey. Surface roughness. Ra. mm. 0.2~0.75. Density. g/cm 3. >=3.2. Physical properties. Bending strength. 3 -point... (read more)Browse Ceramic Sheets and Boards Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
Hannay Reels
Hannay Reels 800 Series Compact Hose Reel Hannay Reels 800 Series spring rewind hose reel is ideal for processing, maintenance, washdown, air or fuel dispensing. This reel is compact, and with a small footprint is very versatile, it can be truck, trailer, floor, wall or ceiling mounted. The 800 series spring reel is a durable, dependable reel and can withstand every day use. Features: Roll-formed channel frame for heavy-duty applications. Non-sparking ratchet assembly. Declutching arbor to prevent damage from reverse winding. Standard... (read more)Browse Hose Reels Datasheets for Hannay Reels -
UIY Inc.
800~1000MHz 200W 19 dB Drop in Isolator The UIYDI2531A800T1000 is a high-performance Drop in Isolator specifically designed for modern communication systems and radio frequency (RF) applications. This product offers exceptional electrical performance across a wide frequency range of 800 MHz to 1000 MHz, ensuring the stability and efficiency of signal transmission. With its outstanding isolation capability and low insertion loss, the UIYDI2531A800T1000 has become a crucial component in numerous wireless communication systems. Design... (read more)Browse RF Isolators and RF Circulators Datasheets for UIY Inc. -
Richardson RFPD
ADF4368 Frac-N Wideband Synthesizer:Analog Devices The ADF4368 is a high performance, ultra-low jitter, integer-N and fractional-N phase-locked loop (PLL) with integrated VCO ideally suited for frequency conversion applications. The high performance PLL has a figure of merit of -239 dBc/Hz, very low 1/f noise of normalized -287 dBc/Hz and high PFD frequency that can achieve ultra-low in-band noise and integrated jitter. The ADF4368 can generate any frequency from 800 MHz to 12.8 GHz without an internal doubler, which eliminates the need... (read more)Browse Frequency Synthesizers Datasheets for Richardson RFPD -
Eteily Technologies India Pvt. Ltd.
N-Male to N-Male Adapter with Lightning Arrestor Eteily Technologies offers the N-Male to N-Male Adapter with Lightning Arrestor, which is intended to safeguard sensitive RF equipment from high-voltage surges, static discharge, and lightning-induced transients. This surge protector operates across a wide frequency range of 0-6 GHz and has precision-engineered coaxial structure to ensure minimal signal loss while protecting antennas, wireless radios, routers, and transmission systems. This lightning arrestor, with durable N-male connections... (read more)Browse RF Surge Suppressors Datasheets for Eteily Technologies India Pvt. Ltd. -
New Yorker Electronics Co., Inc.
N-Channel MOSFETs Good-Ark Semiconductor introduces the GSFA20106, a high-performance 200V, 106A, 9.4m O N-Channel MOSFET designed for demanding high-frequency switching applications. Engineered with the latest deep trench technology and advanced process techniques, this MOSFET achieves ultra-low RDS(ON) and minimized gate charge, enhancing efficiency and power density. Its high repetitive avalanche rating ensures durability and reliability in challenging environments, making it a preferred choice for power... (read more) -
Win Source Electronics
2N7002ET1G N-Channel MOSFET Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features. Drain-Source Breakdown Voltage: 60V. Continuous Drain Current: 260mA at 25 C. Gate-Source Threshold Voltage: 2.5V @ 250 mA. Maximum Rds On: 2.5 Ohm @ 240mA, 10V. Max Gate Charge: 0.81nC @ 5V. Max Input Capacitance: 26.7pF @ 25V. Fast Switching Speed: Turn-on delay time of 3ns, Turn-off... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Win Source Electronics
N-Channel MOSFET | BSS138NH6327XTSA2 Infineon Technologies BSS138NH6327XTSA2 Overview. N-Channel MOSFET: Suitable for various applications requiring efficient power switching. 60V Drain-Source Breakdown Voltage: Capable of handling high voltages. 230mA Continuous Drain Current: Ensures reliable operation under moderate loads. 1.4V Gate-Source Threshold Voltage: Low gate drive requirement enhances efficiency. 1.4nC Max Gate Charge: Quick switching capability for high efficiency. PG-SOT23-3 Package: Compact surface-mount package... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics
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The Proto-Magnetar Model for Gamma-Ray Bursts
…B., Virgili F., Dai Z. G., 2007, ApJ, 662, 1111 Liebend¨orfer M., Mezzacappa A., Thielemann F., Messer O. E., Hix W. R., Bruenn S … P., 2010, ApJ, 713, 800 Lithwick Y., Sari R … F. P., Manchester R. N ., Gotthelf E. V. G…
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The Environmental Impact of Galaxy Evolution
…C. S. 2006, MNRAS, 372, 21 Bˆırzan, L., Rafferty, D. A., McNamara, B. R., Wise, M. W., & Nulsen, P. E. J. 2004, ApJ, 607, 800 Dahlen, T., et al … F., Nomoto, K., Kishimoto, N ., Umeda, H., Hix , W. R., & Thielemann…
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Effects of genetic fusion of factor IX to albumin on in vivo clearance in mice and rabbits
The kinetics of MIXT activation paralleled that of HIX (data not shown). .... Once activated, however, the fusion protein was at least as efficient as MIXT in catalyzing the cleavage of a fIXa-specific chromogenic substrate, with a mean velocity of 800 ± 55 mOD/min/nmol ( n ¼ 2, mean ± one-half the range), compared…
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On the origin of the helium-rich population in Omega Centauri
…R. P., Suntzeff N. B., Smith V. V., Langer G. E., Fulbright J. P., 1999, AJ, 118, 1273 Iwamoto K., Brachwitz F., Nomoto K., Kishimoto N., Umeda H., Hix W. R., Thielemann F … H., Nomoto K., Tominaga N ., Ohkubo T., 2006, ApJ … 2008, ApJ, 672, L25 Recchi S., Matteucci F., D’Ercole A., 2001, MNRAS, 322, 800 Renzini A., 2008…
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Supernovae Powered by Collapsar Accretion in Gamma-Ray Burst Sources
…E., Langer, N., & Hartmann, D. H. 2003, ApJ, 591, 288 Heger, A., Woosley, S. E., & Spruit, H. C. 2005, ApJ, 626, 350 Herant, M., Benz, W., Hix , W. R., Fryer, C … ApJ, 593, L19 Kawanaka, N ., & Mineshige, S. 2007 .... 713, 800 Lindner, C. C., Milosavljevi´c, M., Shen, R., & Kumar, P. 2011, in preparation.
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Simulations of Accretion Powered Supernovae in the Progenitors of Gamma
Ray Bursts
…E. 2006, ApJ, 641, 961 Limongi, M., & Chieffi, A. 2003, ApJ, 592, 404 Lindner, C. C., Milosavljevi´c, M., Couch, S. M., & Kumar, P. 2010, ApJ, 713, 800 López-Cámara, D., Lee … Maeda, K., & Tominaga, N . 2009, MNRAS, 394, 1317 … D. 2012, MNRAS, 419, 827 Mezzacappa, A., Bruenn, S. W., Blondin, J. M., Hix , W. R., &…
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A High-Resolution X-Ray and Optical Study of SN 1006: Asymmetric
Expansion and Small-Scale Structure in a Type Ia Supernova Remnant
Iwamoto, K., Brachwitz, F., Nomoto, K., Kishimoto, N ., Umeda, H., Hix , W. R., & Thiele- mann, F.-K. 1999, ApJS, 125, 439. .... Jun, B.-I. & Norman, M. L. 1996, ApJ, 465, 800 .
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A Detailed Observation of a LMC Supernova Remnant DEM L241 with
XMM-Newton
…J., Hernquist, L. E., Heyl, J. S., & Narayan, R. 2001, ApJ, 548, 800 Chu, Y.-H .... Hirayama, M., Nagase, F., Endo, T., Kawai, N ., & Itoh, M. 2002, MNRAS, 333, 603 Hughes, J. P., Hayashi, I., & Koyama … 1983, ApJ, 270, 119 Nakamura, T., Umeda, H., Iwamoto, K., Nomoto, K., Hashimoto, M., Hix , W. R., & Thielemann…
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On the Dynamical Origin of the ICM Metallicity Evolution
…2005, MNRAS, 262, 110 Greggio L., Renzini A., 1983, A&A, 118, 217 Heckman T.M., Lehnert M.D., Strickland D.K., Armus L., 2000, ApJS, 129, 493 Iwamoto K., Brachwitz F., Nomoto K., Kishimoto N ., Umeda H., Hix W.H., Thielemann F … W., 2005, MNRAS, 359, 1041 Recchi S., Matteucci F., D’Ercole A., MNRAS, 322, 800 Renzini A., 1997…
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Nuclear-dominated accretion and subluminous supernovae from the merger
of a white dwarf with a neutron star or black hole
…Kulkarni S. R., 2005, ArXiv Astrophysics e-prints Lamers H. J. G. L. M., Cassinelli J. P., 1999, Introduction to Stel- lar Winds Laughlin G., Bodenheimer P., 1994, ApJ, 436, 335 Law N . M., et al., 2009 … P., 2010, ApJ, 713, 800 . .... Rau A., et al., 2009, PASP, 121, 1334 Rosswog S., Ramirez-Ruiz E., Hix W. R., 2009…
