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Supplier: Skyworks Solutions, Inc.
Description: Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated
- VR: 22 volts
- Features: Varactor Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated
- VR: 22 volts
- Features: Varactor Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The SMV2025 series are silicon surface mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltage-controlled phase shifter, or tunable bandpass filter. The minimum capacitance ratio from 2 V to 10
- VR: 20 volts
- CT: 5.88 pF
- Features: Other, Varactor Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The SMV2026 series are silicon surface-mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltagecontrolled phase shifter, or tunable bandpass filter. The minimum capacitance ratio from 2 V to 10 V
- VR: 15 volts
- CT: 18 pF
- Features: Other, Varactor Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Varactor Diodes 100 HYPERABRUPT M/W
- Features: Varactor Diodes
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Supplier: Richardson RFPD
Description: Silicon Hyperabrupt Varactor Diode Chips
- Features: RF Diodes, Single, Varactor Diodes
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Description: DIODE,VARACTOR, HYPERABRUPT,GAAS
- Tj: -65 to 175 C
- Features: Other, Varactor Diodes
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Supplier: ODG (Origin Data Global)
Description: DIODE,VARACTOR, HYPERABRUPT,GAAS
- Tj: -65 to 175 C
- CT: 0.5 pF
- Features: Other, Varactor Diodes
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Supplier: Rochester Electronics
Description: Hyper-Abrupt Junction Type Silicon Composite Varactor Diode
- Features: Other, Varactor Diodes
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QTV varactor-tunable Gunn oscillators cover the frequency range of 18 to 110 GHz in seven waveguide bands. These oscillators combine proprietary cavity design, abrupt or hyper-abrupt tuning varactor diodes and high performance Gunn diodes to
- Oscillation Frequency: 18,000 to 110,000 MHz
- Output Power: 10 to 24 dBm
- Operating Temperature: 0 to 50 C
- Package / Form Factor: Waveguide Assembly
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Hyperabrupt Junction Tuning Varactor Product overview: SMV1771-079 from Skyworks Solutions, Inc. is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers
- Features: Rectifier Diode
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Supplier: Infineon Technologies AG
Description: Silicon Tuning Diode Summary of Features High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage Pb-free (RoHS compliant) package
- IF: 20 mA
- VR: 6 volts
- Features: Other, RF Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Silicon Tuning Diode Summary of Features Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs Pb-free
- IF: 20 mA
- VR: 10 volts
- Features: Other, RF Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: Silicon Tuning Diodes Summary of Features High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package
- IF: 50 mA
- VR: 12 volts
- Features: Other, RF Diodes
- RoHS Compliant: RoHS Compliant
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Characteristics of GaAs varactor diode with hyperabrupt doping profile
For the same anode diameter, the hyperabrupt varactor diodes exhibit a much larger range of variability in capacitance.
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Varactor
SMV2022-000 - Silicon Hyperabrupt Varactor Diode Chips .
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Fabrication of hyperabrupt GaAs varactor diode for W-band waveguide VCO
Abstract — In this work, we fabricated a hyperabrupt varactor diode and W-band waveguide VCO using fabricated varactor diode.
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Physics of Semiconductor Devices
The measured tuning characteristics were evaluated with an off-chip hyperabrupt varactor diode MA 46472 and are depicted in Fig.6.
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ALPHA SMV2019 Series Datasheets. SMV2020, SMV2022, SMV2019, SMV2023-000, SMV2022-000, SMV2021, SMV2020-000, SMV2023, SMV2021-000, SMV2019-000 Datasheet.
Silicon hyperabrupt varactor diode chip Operational temperature range from -55°C to 150°C.
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ZMV831BTA datasheet - 28 V, silicon hyperabrupt varactor diode : Datasheets for Electronic Components and Semiconductors
28 V, silicon hyperabrupt varactor diode .
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Page 5. Semiconductor parts with 933 in root number
SILICON 12V HYPERABRUPT VARACTOR DIODES .
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Page 7. Semiconductor parts with 833 in root number
SILICON 28V HYPERABRUPT VARACTOR DIODES .
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Junction / Current
SMV2022-000 - Silicon Hyperabrupt Varactor Diode Chips .
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Page 4. Semiconductor parts with 829 in root number
SILICON 28V HYPERABRUPT VARACTOR DIODES .
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