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Supplier: Semikron, Inc.
Description: SEMIKRON IGBT driver family SEMIKRON offers two driver families – the SKHI and the SKYPER drivers. SKYPER 12 press-fit, SKYPER 32, SKYPER 42 LJ and SKYPER 52 cover with 1W to 10W output power per channel the whole power range between 30kW and 2MW inverters. The high
- Peak Output Current: 30 amps
- Number of Outputs: 1, 2, 4
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type:
- Gate Type: Buffer / Driver
- IC Package Type: Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1066167-IXDD630CI Category: Integrated Circuits (ICs)>PMIC - Gate Drivers Package: Tube Standard Package: 50 Channel Type: Single Input Type: Non-Inverting Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT,
- Peak Output Current: 30 amps
- Supply Voltage: 12.5 to 35 volts
- Rise Time: 11 ns
- Fall Time: 11 ns
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Description: MORNSUN power module for IGBT/SiC gate driver adopts the mode of common ground outputs internally for better energy provision of IGBT driver's turn-on and turn-off. Meanwhile, this IGBT driver power supply features output short-circuit
- DC Input Voltage: 24 volts
- DC Output Voltage: -8 to 15 volts
- DC Output Current: -120 to 120 amps
- Type: DC/DC Converter
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1355000-IXDD604SITR Category: Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers Temperature Range - Operating: -40°C ~ 125°C (TA) Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Integrated Circuits
- Peak Output Current: 4 amps
- Supply Voltage: 4.5 to 35 volts
- Rise Time: 9 ns
- Fall Time: 8 ns
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Supplier: Infineon Technologies AG
Description: The EiceDRIVER™ gate driver 1EDI3026AS is a high voltage IGBT driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage with up to 20 A peak current for high power switches. It
- Peak Output Current: 20 amps
- Supply Voltage: 3 to 5.5 volts
- Propagation Delay: 60 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: The EiceDRIVER™ gate driver 1EDI3028AS is a high voltage IGBT driver for automotive applications, providing 8 kV galvanic insulation with coreless transformer (CT) technology. It offers a powerful output stage with up to 15 A peak current for high power switches. It
- Peak Output Current: 15 amps
- Supply Voltage: 3 to 5.5 volts
- Propagation Delay: 60 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: Output Stage Capability 1EDI3025AS IGBT DESAT yes 20A 1EDI3026AS IGBT OCP yes 20A 1EDI3028AS IGBT DESAT yes, w/o current source 15A 1EDI3035AS SiC DESAT yes 20A 1EDI3038AS SiC DESAT no 15A Product Variant Driver support Short Circuit Protection ADC Output Stage
- Peak Output Current: 20 amps
- Supply Voltage: 3 to 5.5 volts
- Propagation Delay: 60 ns
- Driver Type: High-side Gate Driver
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Description: HIGH CURRENT IGBT GATE DRIVER
- Supply Voltage: 20 volts
- Features: Other
- Packing Method: Tape Reel
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Supplier: Acme Chip Technology Co., Limited
Description: IC GATE DRVR IGBT PLUG&PLAY
- Packing Method: Bulk
- Features: Other
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Description: MOSFET IGBT SIC DRIVER 9A
- Operating Temperature: -40 to 125 C
- IC Package Type: Other, SOIC
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Supplier: Infineon Technologies AG
Description: Protection ADC Output Stage Capability 1EDI3025AS IGBT DESAT yes 20A 1EDI3026AS IGBT OCP yes 20A 1EDI3028AS IGBT DESAT yes, w/o current source 15A 1EDI3035AS SiC DESAT yes 20A 1EDI3038AS SiC DESAT no 15A Product Variant Driver support Short Circuit Protection ADC
- Peak Output Current: 15 amps
- Supply Voltage: 3 to 5.5 volts
- Propagation Delay: 60 ns
- Driver Type: High-side Gate Driver
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Description: MORNSUN hybrid integrated IGBT drivers are designed with a built-in isolation DC/DC converter. They can realize the safety electrical isolation between the power semiconductor and the control circuit with the high-speed optical coupling. The series features switching frequency
- Output Voltage: 15 volts
- Supply Voltage: 15 volts
- Switching Frequency: 40 kHz
- Number of Outputs: 1
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Quad. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Quad, Gate Drivers
- Driver Type: High-side Gate Driver
- Output Configuration: Noninverting
- Features: Other
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Supplier: Richardson RFPD
Description: The BG2B is a two channel gate drive circuit for high power IGBT modules. The BG2B utilizes Powerex hybrid gate drivers and DC to DC converters to provide efficient switching of modules rated up to 400A. The hybrid gate drivers include high speed
- Peak Output Current: 5 amps
- Features: Other
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Supplier: Broadcom Inc.
Description: The ACPL-W314 gate drive optocoupler consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage
- Rise Time: 0.05 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 100 C
- Input: AC, DC
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Supplier: Broadcom Inc.
Description: The ACPL-W302 gate drive optocoupler consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating voltage
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 100 C
- Input: AC, DC
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Gate Drivers MOSFET Driver Product overview: FDA215STR from IXYS Integrated Circuits is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for
- Features: Other
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Supplier: Broadcom Inc.
Description: TThe ACNW3130 gate drive optocoupler contains a AlGaAs LED. The LED is optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. The high operating
- Rise Time: 0.1 µs
- Collector Emitter Breakdown Voltage: 3 volts
- Operating Temperature: -40 to 100 C
- Input: AC
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Supplier: ROHM Semiconductor GmbH
Description: RGPR20NL43HR is the Insulated Gate Bipolar Transistor (IGBT) for automotive ignition coil driver circuits and solenoid driver circuits.
- PD: 107,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to
- Supply Voltage: 10 to 18 volts
- Operating Temperature: -40 to 125 C
- Number of Outputs: 1
- Screening Level: Commercial
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Motor / Motion / Ignition Controllers & Drivers Dis Short Circuit Rated IGBT Product overview: SGH30N60RUFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for
- PD: 235,000 milliwatts
- TJ: -55 C
- Features: IGBT
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Supplier: Richardson RFPD
Description: Trench IGBT Modules. Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring
- Features: IGBT, Other
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Supplier: Richardson RFPD
Description: communication to the SPI registers on the MC33GD3160 gate drive devices in either daisy chain or standalone configuration. The GD3160 translator board is used to translate 3.3 V signals to 5.0 V signals between the MCU and GD3160 gate drivers. The evaluation kit is designed to
- Category: Development Board
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Supplier: Littelfuse, Inc.
Description: This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high
- VCE(on): 1.8 volts
- Features: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: RGPR30NS40 is a Ignition IGBT with low collector - emitter saturation voltage, suitable for Ignition Coil Driver Circuits, Solenoid Driver Circuits. It is a highly reliable product for automotive.
- PD: 125,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: RGPR20NS43 is a Ignition IGBT with low collector - emitter saturation voltage, suitable for Ignition Coil Driver Circuits, Solenoid Driver Circuits. It is a highly reliable product for automotive.
- PD: 107,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter 10 A, 600 V short-circuit rugged IGBT Product overview: STGIPS10C60 from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and
- PD: 33,000 milliwatts
- Features: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 1186568-IR2117 Packaging: Tube Mounting Style: Through Hole Channel Type: Single Input Type: Non-Inverting Driven Configuration: High-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH:
- TJ: -40 to 150 C
- Features: MOSFET, Other
- Polarity: N-Channel
- Package Type: SOT3
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Supplier: SAE International
Description: regions and at bus voltage much lower than the worst case voltage. This paper proposes a low-cost and simple gate driver circuit that can actively adjust the turn-off switching speed based on IGBT current levels. The proposed circuit utilizes the current sensing
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Supplier: ROHM Semiconductor USA, LLC
Description: The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up
- Supply Voltage: 11.5 to 20 volts
- Operating Temperature: -40 to 125 C
- Number of Outputs: 1
- Screening Level: Commercial
Find Suppliers by Category Top
Featured Products Top
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its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
The Infineon IR1176 is a compact and efficient low-side gate driver IC, designed to drive MOSFETs and IGBTs with precision and stability. With a non-inverting output and housed in a space-saving 8-SOIC package (read more)
Browse Gate Drivers Datasheets for Nova Technology(HK) Co.,Ltd -
Unlock ultimate performance and simplicity with our revolutionary design. Allegro’s AHV85110 isolated gate driver significantly reduces circuit design complexity by removing the need for bootstrap circuits and isolated supplies, as well as significantly decreasing EMI challenges. Start designing with our solutions today. (read more)
Browse Gate Drivers Datasheets for Allegro MicroSystems Inc. -
The ADuM4221/ADuM4221-1/ADuM4221-2 are 4 A isolated, half bridge gate drivers that employ the Analog Devices, Inc., iCoupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM4221/ADuM4221-1/ ADuM4221-2 provide 5700 V rms isolation in an increased (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
The FAN7387MX is a robust, highly integrated gate driver IC tailored for demanding high-voltage applications. By combining critical control, protection, and drive functions into a single device, it enables engineers to build more efficient, reliable, and compact (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
Energy Fuji Electric Co., Ltd. is pleased to announce the launch of the HPnC Series, a new series of large-capacity industrial IGBT* modules for applications including power converters for solar and wind power generation systems. * Insulated-gate bipolar transistor (read more)
Browse Semiconductor Power Modules Datasheets for Fuji Electric Corp. of America -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
-channel functional and reinforced isolated EiceDRIVER™ gate driver IC parts. Enter a new era of efficiency with Infineon. Why GaN from Infineon? What turns Infineon into your best choice when it comes to GaN based solutions? The four pillars of success that make the difference (read more)
Browse Network Equipment Datasheets for DigiKey -
Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives - It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with RECOM's R24C2T25 DC/DC converter from Richardson RFPD. The SMT part, in a compact 7.5 x 12.83mm 36-pin (read more)
Browse DC-DC Converter Chips Datasheets for Richardson RFPD -
, and complexity of a power module—both in the design and in the bill of materials (BOM)—and the added complexity increases the risk of unexpected results during design validation and in application. Conventional gate drivers also typically use a bootstrap circuit to create the (read more)
Browse Gate Drivers Datasheets for Allegro MicroSystems Inc.
Conduct Research Top
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Galvanic isolation for IGBT-Driver
Usually, an IGBT (Insulated Gate Bipolar Transistor) is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence describes the basics very well, in the case of IGBT
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Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120
with hysteresis, and high common mode transient immunity. Applications for these devices include IGBT and power MOSFET gate drivers. In summary, the PS9552 provides all the features and offers performance equivalent to the HCPL-3120. As a result, the PS9552 would be an easy drop-in replacement
More Information Top
Indicates content that may require registration and/or purchase.
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http://calhoun.nps.edu/public/bitstream/handle/10945/8152/controllerdesign00sale.pdf?sequence=1
lOOkW SSCM through a proprietary IGBT gate driver circuit .
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http://waset.org/publications/13504/design-calculation-and-performance-testing-of-heating-coil-in-induction-surface-hardening-machine
Fig. 10 IGBT gate driver circuit (for start heating .
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High power snubberless IGBT converter for direct-drive wind power generation system
In IGBT gate driver circuit , a lot of modified methods which change the energy the input capacitor of IGBTs .
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Intelligent bidirectional power switch module for matrix converter applications
These components combine an optocoupler with an IGBT gate driver circuit in the same package.
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Low jitter and drift high voltage IGBT gate driver
Figure 1 is the block diagram of the IGBT gate driver circuit (IGBT trigger) that we developed.
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http://dspace.mit.edu/bitstream/handle/1721.1/85727/51167102-MIT.pdf?sequence=2
The DC-DC converters used in this design are the M57145L-01 converters manufactured by Powerex for use in IGBT gate driver circuits .
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http://www.iosrjournals.org/iosr-jeee/Papers/Vol5-issue2/D0522128.pdf
5V supply is used for the operation of the microcontroller board while 12 V supply is used for the MOSFET/ IGBT gate driver circuit .
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http://repositories.lib.utexas.edu/bitstream/handle/2152/ETD-UT-2009-12-498/LEE-THESIS.pdf?sequence=1
These signals enter into the IGBT gate driver circuit , and the IGBT closes during the width of a signal.
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Improvements for the pulse charger with zero current switching and isolation for electric vehicles
IGBT gate driver circuit was designed with galvanic isolation to drive five IGBTS at different times according to the five modes of operation.
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Power factor correction using an enhancement-mode SiC JFET
Switching waveforms were analyzed to evaluate the functionality of the IGBT and IGBT gate driver circuit for calculating the modification to the components necessary to integrate the JFET in place of the original IGBT.