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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD0912M150HV is designed for Avionics systems operating at 960-1215 . Operating at 10ìs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 watts of power across the instantaneous operating bandwidth of 960-1215 .
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150. Operating at 10ìs, 1% pulse conditions this LDMOS FET device supplies a minimum of 500 watts of power across the instantaneous operating bandwidth of
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1214M10 is designed for L-Band radar operating at 1200-1400 . This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15 watt of peak pulse power. All devices are 100% screened for large signal parameters.
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 . Operating at 50ìs, 2% pulse conditions this LDMOS FET device supplies a minimum of 550 watts of power across the instantaneous operating bandwidth of 1030-1090 .
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: AIRFAST RF POWER LDMOS TRANSISTO
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Supplier: Utmel Electronic Limited
Description: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2
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Supplier: Utmel Electronic Limited
Description: MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
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Supplier: Wolfspeed
Description: The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Wolfspeed
Description: The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: The AFT18S230SR3 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
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Supplier: Rochester Electronics
Description: Power LDMOS transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: Power LDMOS transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: Power LDMOS transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: LDMOS RF Power Transistor
- Package Type: Other
- Transistor Type: Power MOSFET
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Supplier: Richardson RFPD
Description: RF Power LDMOS Transistor. This 6.3 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.
- Package Type: Other
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF power trans LDmoST plastic
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: RF POWER LDMOS TRANSISTOR HF UP
- Package Type: Other
- Transistor Type: MOSFET, MOSFET RF Transistors, Other
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Description: RF POWER LDMOS T0270
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Supplier: Win Source Electronics
Description: Manufacturer: Ampleon USA Inc. Win Source Part Number: 770173-BLF872,112 Packaging: Tray Package: SOT800 Current Rating: 41A Current - Test: 900mA Transistor Type: LDMOS Voltage - Test: 32V Power - Output: 300W Part Status: Obsolete(EOL) Family Name: BLF
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1033176-MRF24300NR3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Bulk Standard Package: 1 Voltage - Rated: 65 V Frequency: 2.45GHz Current - Test: 100 mA Gain: 13.1dB Transistor Type: LDMOS
- Operating Frequency: 2450 MHz
- Output Power: 330 watts
- Package Type: SOT3
- Power Gain: 13.1 dB
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Supplier: Lingto Electronic Limited
Description: RF POWER LDMOS TRANSISTOR
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Supplier: RS Components, Ltd.
Description: RF Power MOSFET N-Ch 4W LdmoST SOT-89 - Discrete Semiconductors - MOSFET Transistors
- Package Type: SOT89, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: This 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz.
- Amplifier Type: Power Amplifier
- Frequency Range: 595 to 851 MHz
- Maximum Gain: 17.5 dB
- Maximum Operating Voltage: 48 volts
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Supplier: Win Source Electronics
Description: : LDMOS Voltage - Test: 28 V Power - Output: 60W Package / Case: SOT-957A Supplier Device Package: NI-780H-2L ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) Current Rating (Amps): 6µA REACH Status: Vendor Undefined HTSUS: 8541.29.0095 Mfr: Freescale
- Package Type: SOT3
- Power MOSFET Type: LDMOSFET
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Supplier: DigiKey
Description: RF Mosfet LDMOS 12.5V 50mA 500MHz 17dB 3W 10-PowerSO
- Package Type: Other
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Supplier: Richardson RFPD
Description: small pallet footprint, using advanced broadband RF matching networks and RF LDMOS transistors. Matched for 50 ohms input and output, the pallet can be easily combined to provide higher power when required.
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 062172-PTFB183404E V1 R250 Packaging: Cut Reel Voltage Rating: 65V Frequency: 1.88GHz Current - Test: 2.6A Gain: 17dB Transistor Polarity: LDMOS Voltage - Test: 30V Power - Output: 80W Categories
- Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: with some LDMOS transistors characterized in radiation up to 25V, this can be very useful for Power Management application. In addition, the Physical Design Kit (PDK) enables customers to develop their own analog blocks and use the Microchip Space Multi-Project Wafer (SMPW)
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Supplier: Richardson RFPD
Description: Jump start your RF amplifier design with NXP's MRF101AN RF Essentials Kit. Using MRF101AN, a 100 W RF power LDMOS transistor designed in an easy-to-use TO-220 package, the RF Essentials Kit helps accelerate PA design. Reference circuit examples are available for various
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Supplier: ValueTronics International, Inc.
Description: generation LDMOS Transistors provide reliable brute-power performance at frequencies up to 1000 MHz. The CMC-1000 RF power amplifiers feature heavy-duty individually shielded aluminum housings at the module level. This concept of a shielded modular design minimizes
- Frequency Range: 1000 MHz
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Supplier: Plansee SE
Description: opto-electronics, high-frequency applications, power electronics and micro-electronics. The most important applications for our materials include: Si LDMOS transistors (LDMOS = laterally diffused metal oxide semiconductor) GaN/GaAs HEMT transistors Microwave
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available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
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RF Power: GaN Moves In for the Kill
Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to the annals of history? Well you'd certainly think so, based on articles in the trade press, symposium
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Lateral Power Transistors in Integrated Circuits
M.A. Amberetu, C.A.T. Salama, 150-V class superjunction power LDMOS transistor switch on SOI, in International Symposium on Power Semiconductors and ICs, Santa Fe, USA, 2002 63.
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http://www.nxp.com/documents/data_sheet/BLF8G09LS-270W_8G09LS-270GW.pdf
270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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http://www.nxp.com/documents/selection_guide/75016952.pdf
Power LDMOS transistor for base station applications .
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http://www.nxp.com/documents/data_sheet/BLF8G20LS-140V_20LS-140GV.pdf
140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
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http://www.nxp.com/documents/data_sheet/BLF878.pdf
UHF power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLF988_BLF988S.pdf
Power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLL6H1214-500_1214LS-500.pdf
500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
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http://www.nxp.com/documents/data_sheet/BLF574.pdf
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
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http://www.nxp.com/documents/data_sheet/BLF888.pdf
UHF power LDMOS transistor .
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http://www.nxp.com/documents/data_sheet/BLF6G22L-40P_6G22LS-40P.pdf
LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.