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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Medium Power
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Medium Power
- Polarity: PNP, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN Medium Power
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor Medium Power
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 042554-SD4933 Packaging: Tray Voltage Rating: 200V Current Rating: 40A Frequency: 30MHz Current - Test: 250mA Gain: 24dB Transistor Polarity: N-Channel Voltage - Test: 50V Power - Output: 300W
- Operating Frequency: 30 MHz
- Output Power: 300 watts
- Package Type: SOT3, Other
- Packing Method: Tray, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Medium Power
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Medium Power
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: B Power - Output: 15W Family Name: MRF136 Categories: Discrete Semiconductor Products Manufacturer Package: 211-07, Style 2 Voltage Rating DC: 65V Alternative Parts (Cross-Reference): MRF137; Introduction Date: May 20, 2009 ECCN: EAR99 Estimated EOL Date: 2027 Popularity: Medium Fake
- Package Type: SOT3
- Polarity: N-Channel
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT 1A PNP Medium Power Transistors
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1154527-CMPT3904G TR Polarity: NPN Gain Bandwidth Product: 300 MHz Categories: RF Transistors(BJT) Case / Package: SOT-23
- Operating Frequency: 300 MHz
- Output Power: Up to 0.3500 watts
- Package Type: SOT3, SOT23, Other
- Polarity: NPN, Other
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Supplier: Win Source Electronics
Description: Output Power: 100 W Categories: Transistors - FETs, MOSFETs - RF Max Frequency: 500 MHz Popularity: Medium Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Limited Mount: Screw RoHS: Compliant Radiation Hardening: No Min Operating Temperature
- Package Type: SOT3
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode this common base device supplies a minimum of 15 watts of peak pulse power
- Operating Frequency: 3100 to 3400 MHz
- Output Power: 15 watts
- Package Type: Other
- Power Gain: 8.3 dB
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The medium power pulsed radar transistor device part number IB3134M70 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode this common base device supplies a minimum of 70 watts of peak pulse power
- Operating Frequency: 3100 to 3400 MHz
- Output Power: 70 watts
- Package Type: Other
- Power Gain: 8.2 dB
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Supplier: Rochester Electronics
Description: Medium Power NPN Bipolar Power Transistor
- Package Type: Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, Power MOSFET
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Description: MEDIUM POWER ECONO
- Output Power: 20 watts
- Packing Method: Other
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Supplier: Acme Chip Technology Co., Limited
Description: MEDIUM POWER ECONO
- Output Power: 20 watts
- Packing Method: Other
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Supplier: Nexperia B.V.
Description: PNP general purpose transistor in a SOT883 leadless ultra small plastic package. NPN complement: 2PC4617M series. Features and benefits Leadless ultra small plastic package (1 mm x 0.6 mm x 0.5 mm) Board space 1.3 mm x 0.9 mm Power dissipation
- IC(max): -100 milliamps
- Operating Frequency: 100 MHz
- PD: 250 milliwatts
- Package Type: Other
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Supplier: Richardson RFPD
Description: The ADPA7001CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), balanced medium power amplifier, with an integrated temperature compensated on-chip power detector that operates from
- Amplifier Type: Power Amplifier
- Frequency Range: 50000 to 95000 MHz
- Maximum Gain: 14.5 dB
- Output Intercept Point (IP3): 25.5 dBm
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Supplier: RS Components, Ltd.
Description: Medium power transistor, ZXTP2029FTA - Discrete Semiconductors - Bipolar Transistors
- IC(max): 3000 milliamps
- PD: 1560 milliwatts
- Package Type: SOT23, Other
- Polarity: PNP
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Supplier: Richardson RFPD
Description: The CHU3377 is a W-band monolithic multifunction, which integrates an input buffer, a frequency multiplier by three followed by an amplifier splitter and two W-band chains in parallel combined at the output. Each W-band chain includes a frequency multiplier and a medium power
- Input Frequency Range: 12670 to 12830 MHz
- Input Power: 8 dBm
- Package Type: Other
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scenarios. Combined with slip ring technology, they support single/multi?channel RF signal, digital data, power and gas?liquid medium mixed transmission, fully meeting technical demands of radar systems, satellite communication antennas, vehicle?mounted equipment and microwave test benches (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
to allow for systems that use digital pre-distortion to achieve the highest linear output power and leading edge throughput for the RF chain. A coupler with RF output is integrated for DPD feedback training. Options for alternate routing of the feedback are included with low loss. For power (read more)
Browse RF Modules Datasheets for Qorvo -
power consumption to allow for systems that use digital pre-distortion to achieve the highest linear output power and leading edge throughput for the RF chain. This is done across a extreme wide bandwidth enabling operation in all channels from UNII 1-8 (5.1 to 7.1 GHz). A multimode RX is (read more)
Browse RF Modules Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
versatile transistor excels in high-temperature environments with a junction temperature range from -65°C to 200°C, ensuring durability and reliable performance. Its versatility makes it an ideal choice for use in RF circuits, power regulation, switching applications, and more. Designed with (read more)
Browse RF Transmitters Datasheets for LIXINC Electronics Co., Limited -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
waveguide standards—an industry-proven waveguide size ideal for medium-to-high power RF applications. This single-channel rotary joint is engineered to handle extreme power demands, supporting 1 megawatt (MW) of peak power and 1 kilowatt (kW) of average power, making it a reliable choice for (read more)
Browse RF Rotary Joints Datasheets for JiuJiang Ingiant Technology Co., Ltd.
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Analysis of third-order intermodulation distortion in common-emitter BJT and HBT amplifiers
Section V characterizes the nonlinear conductances and capaci- tances of a BJT medium power RF transistor enabling the construction of the Volterra model.
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Noise in sampling phase detectors for RF PLL
If we consider nonlinear active elements that are likely to generate such a noise, they are the transistors of the RF medium power amplifier and the SRD diode.
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Page 5. Semiconductor parts with 754 in root number
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) .
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Page 15. Semiconductor parts with 270 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Page 5. Semiconductor parts with 752 in root number
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD .
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Page 6. Semiconductor parts with 627 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Page 12. Semiconductor parts with 702 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Screening the reliable semiconductor chips by laser acceleration of deep level recombination. Process certification for industrial application
The npn, medium power , 2N 3866 RF transistor , manufactured at SC ROMES SA, was thc test vehicule.
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NXP Semiconductors
RF } Integrated Doherty transistor } Medium power MMICs } Low IF radio tuner / front-ends } HITAG transponder ICs Power } GreenChip / StarPlug families of SMPS controllers } High-efficiency Class D audio amplifiers } Lighting controllers and switches } Automotive and general purpose MOSFETs Data processing…
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Electro-Thermo-Mechanical Characterizations of Various Wire Bonding Interconnects Illuminated by an Electromagnetic Pulse
…transient electro-thermo-mechanical characteri- zation is performed so as to determine transient temperature and stress responses of bonding wires fabricated in coplanar waveg- uides, BGA flip chip and RF power transistors under the impact of slow, medium , and fast EMP also…