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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN Medium Power
- VCEO: 120 volts
- IC(max): 1,000 milliamps
- PD: 500 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Medium Power
- VCEO: 20 volts
- IC(max): 1,000 milliamps
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT223
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Supplier: Nexperia B.V.
Description: NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear
- Polarity: NPN
- Features: Other
- Package Type: SOT223
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Supplier: Nexperia B.V.
Description: NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified
- Polarity: NPN
- Features: Other
- Package Type: SOT223
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Supplier: Nexperia B.V.
Description: NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability Applications Linear
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT223
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Package Type: SOT89
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Package Type: SOT89
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Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1200912-2N5059 Packaging: Bulk Polarity: NPN Gain Bandwidth Product: 160 MHz Categories: RF Transistors(BJT) Case / Package: TO-39 Popularity:
- PD: 5,000 milliwatts
- Output Power: 5 watts
- Transistor Type: Bipolar RF Transistors
- Packing Method: Bulk Pack
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Supplier: ROHM Semiconductor GmbH
Description: 2SCR553P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: NPN, Other, Power MOSFET
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistors, Audio Power Output and Medium Power Switching High current-gain bandwidth product: fT ≥ 4 MHz Min @ IC ≥ 500 mA (NTE196) Designed for use in general purpose amplifier and switching applications.
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 846999-MRF426 Features: RF Transistor Package: Tray Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity
- Package Type: SOT3
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR544P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, PNP, Power MOSFET
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistors, Audio Power Amplifier, Switch, NPN Transistor Type Good linearity of hFE Designed for general purpose medium power switching and amplifier applications.
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, MEDIUM-POWER; PNP; 100VDC; 100VDC; 5VDC; 5 ADC COLLECTOR; 120MADC IB
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Supplier: Win Source Electronics
Description: TO-92 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
- Features: Other
- Polarity: PNP
- Package Type: SOT3, TO-92
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Supplier: Win Source Electronics
Description: Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 25 @ 3mA, 1V Maximum Power Dissipation: 225mW Popularity: Medium Fake Threat In the Open Market: 64
- TJ: -55 to 150 C
- Power Gain: 25 dB
- Noise Figure: 5 dB
- Operating Frequency: 2,000 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 70 GHz fT- Silicon Germanium
- Features: Other
- Packing Method: Tape Reel
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Supplier: Utmel Electronic Limited
Description: BCP56 Series 80 V 1 A Surface Mount NPN Medium Power Transistor - SOT-223
- Polarity: NPN
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Supplier: Allied Electronics, Inc.
Description: Germanium Complementaryyy Transistors Medium Power Amplifier 650 mW (Max.) Power Dissipation Designed for use as a medium power amplifier.
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, SOT-343 Style Package
- Minimum Gain: 8.3 dB
- Maximum Gain: 22.3 dB
- Noise Figure: 0.4 to 1.5 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: SMT MMIC, Low Noise, Medium Power, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
- Minimum Gain: 8.4 dB
- Maximum Gain: 21.3 dB
- Noise Figure: 0.4 to 1.7 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: DRAIN 1 4 SOURCE GATE SOURCE 2 3 GATE SOURCE SOT-343 (SC-70) PACKAGE Function Pin Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF Input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility
- Minimum Gain: 7.6 dB
- Maximum Gain: 20.9 dB
- Noise Figure: 0.5 to 1.8 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: Mini-Circuits’ TAV1-331+ is a MMIC D-PHEMT* transistor with an operating frequency range from 10 to 4000 MHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in
- Minimum Gain: 12 dB
- Maximum Gain: 24.6 dB
- Noise Figure: 0.5 to 1 dB
- Operating Temperature: -40 to 85 C
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Transistor Medium Power
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN Silicon RF Transistor (For medium power amplifiers) Product overview: BFP450 from Siemens is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for
- Features: Bipolar RF Transistors
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Supplier: RS Components, Ltd.
Description: NPN Medium Power Transistor
- Features: General Purpose BJT, Other
- Polarity: NPN
- Package Type: SOT23
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET®
- IC(max): 100 milliamps
- VCEO: 4.5 volts
- fT: 22,000 MHz
- Transistor Type: Bipolar RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The medium power pulsed radar transistor device part number IB3134M15 is designed for S-Band radar systems operating over the instantaneous bandwidth of 3.1-3.4 GHz. While operating in class C mode this common base device supplies a minimum of 15 watts of peak pulse power
- Power Gain: 8.3 dB
- Operating Frequency: 3,100 to 3,400 MHz
- Output Power: 15 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: PNP/NPN 500mA 32V Complex Medium Power Transistors
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN, PNP
- Features: Other
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Supplier: Rochester Electronics
Description: Medium Power NPN Bipolar Power Transistor
- Transistor Type: Bipolar RF Transistors
- Packing Method: Bulk Pack
- Polarity: NPN
- Features: Other, Power MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: MEDIUM POWER 62MM
- Features: IGBT, Other
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Description: MEDIUM POWER ECONO AG-ECONOPP-2
- Output Power: 20 watts
- Features: IGBT, Other
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data distortion caused by mechanical rotation friction and structural displacement. It is widely applicable to medium and high-end industrial rotary equipment that requires simultaneous transmission of power supply, low-frequency control signals, high-speed network data and high-frequency RF (read more)
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to allow for systems that use digital pre-distortion to achieve the highest linear output power and leading edge throughput for the RF chain. A coupler with RF output is integrated for DPD feedback training. Options for alternate routing of the feedback are included with low loss. For power (read more)
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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Analysis of third-order intermodulation distortion in common-emitter BJT and HBT amplifiers
Section V characterizes the nonlinear conductances and capaci- tances of a BJT medium power RF transistor enabling the construction of the Volterra model.
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Noise in sampling phase detectors for RF PLL
If we consider nonlinear active elements that are likely to generate such a noise, they are the transistors of the RF medium power amplifier and the SRD diode.
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Page 5. Semiconductor parts with 754 in root number
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) .
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Page 15. Semiconductor parts with 270 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Page 5. Semiconductor parts with 752 in root number
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD .
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Page 6. Semiconductor parts with 627 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Page 12. Semiconductor parts with 702 in root number
NPN Silicon RF Transistor (For medium power amplifiers) .
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Screening the reliable semiconductor chips by laser acceleration of deep level recombination. Process certification for industrial application
The npn, medium power , 2N 3866 RF transistor , manufactured at SC ROMES SA, was thc test vehicule.
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NXP Semiconductors
RF } Integrated Doherty transistor } Medium power MMICs } Low IF radio tuner / front-ends } HITAG transponder ICs Power } GreenChip / StarPlug families of SMPS controllers } High-efficiency Class D audio amplifiers } Lighting controllers and switches } Automotive and general purpose MOSFETs Data processing…
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Electro-Thermo-Mechanical Characterizations of Various Wire Bonding Interconnects Illuminated by an Electromagnetic Pulse
…transient electro-thermo-mechanical characteri- zation is performed so as to determine transient temperature and stress responses of bonding wires fabricated in coplanar waveg- uides, BGA flip chip and RF power transistors under the impact of slow, medium , and fast EMP also…