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Supplier: Qorvo
Description: QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the
- Power Gain: 17 dB
- Operating Frequency: 30 to 1,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device
- Power Gain: 19.9 dB
- Operating Frequency: 1,200 to 1,400 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Qorvo
Description: The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and
- Power Gain: 22.5 dB
- Operating Frequency: 960 to 1,215 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Qorvo
Description: Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high
- Power Gain: 19.8 dB
- Operating Frequency: 0 to 14,000 MHz
- Transistor Type: HEMT
- Transistor Grade / Operating Range: Military
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 300V 2A 2W Surface Mount U3
- Transistor Grade / Operating Range: Military
- Polarity: NPN
- Features: Other
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Supplier: DigiKey
Description: RH MOSFET 100V U3
- Transistor Grade / Operating Range: Military
- Polarity: N-Channel
- Features: Other
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also
- hfe: 300
- VCEO: 50 volts
- VCBO: 75 volts
- IC(max): 800 milliamps
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Supplier: Solid State Devices, Inc.
Description: TXV, and S-Level Screening Available APPLICATIONS: High Efficiency DC-DC/PoL Converters Motor Controller Robotics/Automation Military and Aerospace
- V(BR)DSS: 100 volts
- rDS(on): 0.008 ohms
- IDSS: 0.1 to 0.6 milliamps
- QG: 12 to 14.999999999999998 nC
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices
- hfe: 50 to 100
- VCEO: 36 volts
- VCBO: -40 to 40 volts
- IC(max): -20 to 20 milliamps
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Supplier: Northrop Grumman Corporation
Description: WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication
- IC(max): 18,000 milliamps
- VCBO: 70 to 85 volts
- Power Gain: 7.4 to 9 dB
- Operating Frequency: 960 to 1,215 MHz
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Supplier: Wolfspeed
Description: ideally suited as a high-power building block supporting both pulsed and CW radar applications. Features Full S-band radar coverage 400 W Typical PSAT 55% Typical Drain Efficiency >10 dB Large Signal Gain Pulsed and CW Operation Applications Civil and Military, Pulsed and CW S-band Radar
- Power Gain: 10 dB
- Output Power: 400 watts
- Operating Frequency: 2,750 to 3,750 MHz
- Transistor Grade / Operating Range: Commercial, Industrial, Military
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Supplier: Solid State Devices, Inc.
Description: Features: Rugged construction Low RDS(on) and high transconductance Fast recovery and superior dv/dt performance Increased reverse energy capability Low input and transfer capacitance for easy paralleling Hermetically sealed package Very fast switching speed TX, TXV, S-Level screening
- V(BR)DSS: 125 volts
- IDSS: 0.1 milliamps
- VGS(off): 2.5 volts
- rDS(on): 7.5 ohms
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Supplier: Solid State Devices, Inc.
Description: Features: TrenchMOS technology Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Hot Case power SMD Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available 2/ Improved (RDS(ON) QG) figure of merit
- V(BR)DSS: 240 volts
- IDSS: 0.3 milliamps
- VGS(off): 4.5 volts
- rDS(on): 0.035 ohms
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Supplier: Universal Semiconductor, Inc.
Description: The USH5008 is a High Voltage Integrated Circuit (HIVIC) designed for switching high voltage analog signals. This HIVIC can be used in ultrasound imaging systems and in other applications that require flexible high voltage switching controlled by internal CMOS logic signals. The USH5008 combines
- PD: 2,000 milliwatts
- TJ: -55 to 125 C
- Number of Transistors in the Chip: 1 to 8
- Transistor Type: CMOS, Power BJT Transistors
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1225 can produce an LNA with high dynamic range, high gain and low noise figure that operates off of a single position DC power supply.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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METEOROLOGICAL RADIO BROADCASTS
An ordinary transistor portable might do the job for the AM (amplitude modulation) transmissions, but will almost … It would, in any case, be far more satisfactory to have a professional communications receiver, and although it is quite easy to pay anything up to £3000 for one, most of the rather old military surplus receivers will still perform quite well …
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Forum
The “old guard,” the senior circuit designers, knew well how to use them and the mili- tary felt comfortable with their maintenance procedures. In my transistor lectures, I empha- sized the main disadvantages of vacuum tubes—they consumed a lot of … But aircraft of the day generated surplus power and their large fuselages easily handled the heat; there …
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A Measurement of the Angular Power Spectrum of the Microwave Background
Made from the High Chilean Andes
The MAT telescope is comprised of the QMAP balloon gondola and instrument (Devlin et al. 1998), mounted on the azimuthal bearing of a surplus Nike Ajax military radar trailer3 . Each of the Ka and Q band horns feed two HEMT-based (high electron mobility tran- sistor ) amplifiers (Pospieszalski 1992) with one in each po- larization.
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Hut, The engineer knowledge
… D5 microstructure-investigation method D94 microtome cutting preparation D94 index D6 Miller'sche to military perspective A35 Millikan … … control K68 MPP system (solid in parallel processing) J107 mullite D35 multi emitter transistor G153 multi period … … B208 neutron-antineutron-pair B220 of neutrons B126 prompt delayed B216 B216 neutron excess B213 neutron moderator …
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The author's reply to the discussion on ¿The electrical engineering industry in the post-war economy. Part II¿
… mechanization can be introduced fast enough to maintain the desired sum of both military and civil production. The problems of surplus labour and leisure have become more remote of recent years. Moreover, if a British firm had produced the transistor , as well as a British firm having found …
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Discussion on ¿The electrical engineering industry in the post-war economy. Part II¿ before the Institution, 3rd March, 1955
… mechanization can be introduced fast enough to maintain the desired sum of both military and civil production. The problems of surplus labour and leisure have become more remote of recent years. Moreover, if a British firm had produced the transistor , as well as a British firm having found …
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Applied Asset and Risk Management
… 1999, notably thanks to a relatively high oil price which created a trade surplus and maintained a … A radio is actually a single transistor . … create a network between these machines and the first networks were deployed for university and military use.
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H/sup -/ production in a multicusp microwave plasma
the military and had been obtained from surplus . microwave shunt, somewhat analogous to a bipolar transistor .
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CR4 - Thread: Manufacturing 1 Phase to 3 Phase Converter
… Inc. (Mfg.) Elkhart, IN All Power Company (The) (Mfg.) Bergenfield, NJ AMETEK Rotron Military and Aerospace Products … … MA Schaefer, Inc. (Mfg.) Ashland, MA Solomon Intelligent Electric Co., Ltd. (Mfg.) China Surplus Sales of Nebraska … Omaha, NE TDI - Transistor Devices, Inc. (Mfg.) Hackettstown, NJ TDI-Transistor Devices, Inc. (Mfg.) Hackettstown, NJ Technology …
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Design and fabrication of single-chip carbon nanotubes vacuum field emission differential amplifier
… level, recent developments with diamond [1] and carbon nanotubes (CNTs) [2,3] vacuum transistors , with high gain … … valuable for applications requiring temperaturo-immunity and radiation-hardness such as advanced telecommunication, military and space electronics. The surplus catalyst on the gate-electrode is then removed by photoresist lift-off technique and subsequently …
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