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Supplier: Custom MMIC
Description: The CMD203 is a broadband RF / Microwave MMIC SP4T switch in die form. The CMD203 covers DC to 20 GHz and offers a low insertion loss of 2.4 dB and high isolation of 39 dB at 10 GHz. The switch also includes an on board binary decoder circuit which reduces the number of required logic
- Frequency Range: 20,000 MHz
- Insertion Loss: 2.4 dB
- Isolation (Port to Port): 39 dB
- Switching Speed: 0.000066 ms
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Supplier: Custom MMIC
Description: The CMD215 is a general purpose broadband RF / Microwave high isolation reflective MMIC SPDT switch in die form. Covering DC to 40 GHz, the CMD215 features a low insertion loss of 2.3 dB and high isolation of 36 dB to 20 GHz. The CMD215 switch MMIC operates using complementary
- Frequency Range: 40,000 MHz
- Insertion Loss: 2.3 dB
- Isolation (Port to Port): 36 dB
- Switching Speed: 0.000004 ms
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Supplier: Custom MMIC
Description: The CMD195C3 is a broadband RF / Microwave MMIC SPDT switch housed in a leadless 3x3 mm surface mount (SMT) package. The CMD195C3 covers DC to 18 GHz (L through Ku band) and offers a low insertion loss of 2 dB and high isolation of 37 dB as well as positive gain slope. The positive
- Frequency Range: 18,000 MHz
- Insertion Loss: 2 dB
- Isolation (Port to Port): 37 dB
- Switching Speed: 0.000018 ms
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Supplier: Custom MMIC
Description: The CMD204 die is a general purpose broadband RF / Microwave high isolation non-reflective MMIC SPST switch. Covering DC to 20 GHz, the CMD204 features a low insertion loss of 1.0 dB and high isolation of 50 dB at 10 GHz. The switch operates using complementary control voltage logic
- Frequency Range: 20,000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 50 dB
- Switching Speed: 0.0000018000000000000001 ms
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Supplier: Broadcom Inc.
Description: GHz RF signal range. The LO and RF are matched to 50 Ω. The IF output is provided in 2-port format where an external 90-degree hybrid can be utilized for full image rejection. This MMIC is a cost effective alternative to multi-chip solution that have higher loss and complex
- Receiver Inputs: 1
- Operating Frequency: 7 to 20 MHz
- Operating Temperature: 150 C
- Supply Voltage: 3 to 5 volts
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Supplier: ODG (Origin Data Global)
Description: SWITCH,SPDT,MMIC,
- Operating Frequency: 50 to 20,000 MHz
- TJ: 175 C
- Features: Other
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Supplier: DigiKey
Description: MMIC SPDT SWITCH, DC - 30GHZ
- Frequency Range: 0 to 30,000 MHz
- Insertion Loss: 2.2 dB
- Isolation (Port to Port): 45 dB
- Operating Temperature: -55 to 105 C
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Description: IC SW SPDT MMIC 75 OHM 12-QFN
- TJ: -40 to 85 C
- Features: Other
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Supplier: Qorvo
Description: Qorvo's CMD204 die is a general purpose broadband RF / Microwave high isolation non-reflective MMIC SPST switch. Covering DC to 20 GHz, the CMD204 features a low insertion loss of 1.0 dB and high isolation of 50 dB at 10 GHz. The switch operates using complementary control voltage
- Frequency Range: 20,000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 50 dB
- Switching Speed: 0.0000018000000000000001 ms
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Supplier: Marki Microwave LLC
Description: The MSW2-00004CH is a reflective, single-pole double throw (SPDT) switch. The switch operates from 9 GHz to 100 GHz with average insertion loss and isolation of 1.5 dB (9-60GHz) and 50 dB respectively. The MSW2-00004CH requires positive and negative 5V supply inputs to control switch states. This
- Frequency Range: 9,000 to 100,000 MHz
- Features: Other
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Supplier: Marki Microwave LLC
Description: The MSW2-00003CH is a reflective, single-pole double throw (SPDT) switch. The switch operates from 6 GHz to 67 GHz with average insertion loss and isolation of 1.3 dB and 48 dB respectively. The MSW2-00003CH requires positive and negative 5V supply inputs to control switch states. This switch has a
- Frequency Range: 6,000 to 67,000 MHz
- Features: Other
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Supplier: Marki Microwave LLC
Description: The MSW2-00001CH is a reflective, single-pole double throw (SPDT) switch. The switch operates from 2 GHz to 26 GHz with average insertion loss and isolation of 0.8 dB and 52 dB respectively. The MSW2-00001CH requires positive and negative 5V supply inputs to control switch states. This switch has a
- Frequency Range: 2,000 to 26,000 MHz
- Features: Other
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Supplier: Marki Microwave LLC
Description: The MSW2-00002CH is a reflective, single-pole double throw (SPDT) switch. The switch operates from 4 GHz to 50 GHz with average insertion loss and isolation of 1.0 dB and 48 dB respectively. The MSW2-00002CH requires positive and negative 5V supply inputs to control switch states. This switch has a
- Frequency Range: 4,000 to 50,000 MHz
- Features: Other
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Supplier: Qorvo
Description: Qorvo's CMD196 is a general purpose broadband RF / Microwave high isolation non-reflective MMIC SPDT switch in die form. Covering DC to 28 GHz, the CMD196 features a low insertion loss of 1.75 dB and high isolation of 46 dB at 14 GHz. The CMD196 switch MMIC operates using
- Frequency Range: 28,000 MHz
- Insertion Loss: 1.75 dB
- Isolation (Port to Port): 46 dB
- Switching Speed: 0.0000018000000000000001 ms
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Supplier: Qorvo
Description: Qorvo's CMD203 is a broadband RF / Microwave MMIC SP4T switch in die form. The CMD203 covers DC to 20 GHz and offers a low insertion loss of 2.4 dB and high isolation of 39 dB at 10 GHz. The switch also includes an on board binary decoder circuit which reduces the number of required
- Frequency Range: 20,000 MHz
- Insertion Loss: 2.4 dB
- Isolation (Port to Port): 45 dB
- Switching Speed: 0.000066 ms
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Supplier: Qorvo
Description: Qorvo's CMD196C3 is a general purpose broadband RF / Microwave high isolation non-reflective MMIC SPDT switch housed in a leadless 3x3 mm surface mount (SMT) package. Covering DC to 18 GHz, the CMD196C3 features a low insertion loss of 1.5 dB and high isolation of 46 dB at 8 GHz. The
- Supply Voltage (VS): -5 to 0 volts
- Min Operating Current: 0.006 mA
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Anokiwave
Description: The AWMF-0106 is an integrated power amplifier, low noise amplifier, limiter, and T/R switch intended for radar phased array applications. The device provides 30 dB linear gain and 3W saturated output power during Tx mode; 24 dB gain and 2.8 dB noise figure during Rx mode. Additional features
- Frequency Range: 8,500 to 10,550 MHz
- Package Type: Surface Mount
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Supplier: Richardson RFPD
Description: MACOM's MASW2040 is a GaAs MMIC DPDT switch die. The MASW2040 is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and switched filter banks in systems such as radio and cellular equipment, PCM, GPS, fiber
- Frequency Range: 0 to 2,000 MHz
- Insertion Loss: 0.6 dB
- Isolation (Port to Port): 15 dB
- Switching Speed: 0.000006 ms
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Frequency Range: 3,400 to 3,800 MHz
- Maximum Gain: 18 dB
- Noise Figure: 1.3 dB
- Nominal Operating Current: 0.005 amps
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Supplier: California Eastern Laboratories - CEL
Description: The uPG2179TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and other L, S-band applications. This device operates with dual control voltages of 2.5 to 5.3 V. This device can operate from 0.05 to 3.0 GHz, with low insertion loss and high isolation. This
- Frequency Range: 10 to 3,000 MHz
- Insertion Loss: 0.25 to 0.4 dB
- Isolation (Port to Port): 24 to 27 dB
- Switching Speed: 0.05 to 0.5 ms
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Supplier: Mini-Circuits
Description: at +85°C case temperature. Gali-5+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input
- Frequency Range: 4,000 MHz
- Minimum Gain: 14.9 dB
- Maximum Gain: 20.6 dB
- Output Power( P1dB): 18 dBm
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Supplier: Mini-Circuits
Description: at +85°C case temperature. Gali-19+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input
- Frequency Range: 7,000 MHz
- Minimum Gain: 6.7 dB
- Maximum Gain: 12.1 dB
- Output Power( P1dB): 10.6 dBm
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Supplier: Mini-Circuits
Description: at +85°C case temperature. Gali-3+ is designed to be rugged for ESD and supply switch-on transients. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN 3 RF-OUT & DC-IN 4 2 GROUND 1 RF-IN GROUND Function Pin Number Description RF-IN 1 RF input
- Frequency Range: 3,000 MHz
- Minimum Gain: 15.8 dB
- Maximum Gain: 22.4 dB
- Output Power( P1dB): 12.5 dBm
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Supplier: RS Components, Ltd.
Description: RF MMIC SUB 3 GHZ
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: RF Development Tools GaAs MMIC SPDT Switch Evaluation
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Supplier: Acme Chip Technology Co., Limited
Description: GAAS MMIC SPDT HI POWER SWITCH
- Category: Development Board
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Supplier: Spectrum Microwave
Description: appropriate filter and switch technologies to achieve the best overall performance. This includes design options such as MMIC FET switches for fast switching requirements, discrete PIN diode switches for high isolation, or may involve multiple filter topologies or using
- Frequency (Fc): 10,000 MHz
- Bandwidth: 2,000,000 kHz
- Package Type: Connectorized
- Features: Other
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Supplier: Mini-Circuits
Description: Mini-Circuits’ M3SWA-250DRBD+ is a MMIC SPDT absorptive switch die with an internal driver designed for wideband operation from DC to 4.5 GHz supporting many applications requiring fast switching across a wide frequency range. This model provides excellent isolation, fast switching speed and
- Frequency Range: 4,500 MHz
- Insertion Loss: 0.5 to 1.4 dB
- Isolation (Port to Port): 97 dB
- Operating Temperature: -55 to 100 C
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Supplier: Broadcom Inc.
Description: MGA-785T6 is an easy to use GaAs MMIC LNA that offers excellent linearity and low noise figure for applications from 0.1 to 1.5GHz. It provides an integrated solution of LNA with adjustable IIP3 which can be fixed to a desired current level for the receiver’s linearity requirements. The LNA
- Frequency Range: 100 to 1,500 MHz
- Minimum Gain: 15.7 dB
- Maximum Gain: 15.7 dB
- Output Power( P1dB): 3.200000000000001 dBm
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Supplier: Microchip Technology, Inc.
Description: Our portfolio of MMIC switches targets a broad range of applications including those in electronic warfare, radars, instrumentation (test and measurement) and microwave communications. The portfolio comprises switches spanning DC to 20 GHz based on high-performance process
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Supplier: Microchip Technology, Inc.
Description: The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron-mobility transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The MMS006AA is a die
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Supplier: Richardson RFPD
Description: The MAMF-011099 is a multifunction Ka-band module consisting of three MMICs, in a lead free 40 lead, 6.5 mm AQFN package. Functions include a low noise amplifier, power amplifier, switch, and switch driver. The RX path including the LNA and switch has a 3.6 dB noise figure with 24 dB of gain.
- Supply Voltage: 5 V
- Device Type: Front End
- Features: Other
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Supplier: Broadcom Inc.
Description: The MGA-71543 is a low noise amplifier with built-in bypass switch. It is housed in the miniature SOT-343 package and designed for 3V cellular/PCS applications, e.g. LNA and driver amplifier in CDMA handsets. Bias 3V, 10mA: Gain = 16dB; NF = 1.1dB; IIP3 = 4.3dB all at 2GHz. In bypass mode:
- Frequency Range: 100 to 6,000 MHz
- Minimum Gain: 16 dB
- Maximum Gain: 16 dB
- Noise Figure: 1.1 dB
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Supplier: Broadcom Inc.
Description: Avago Technologies' MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with Bypass/Shutdown mode. MGA-64606 has a low noise figure and high linearity achieved through the use of Avago Technologies’ proprietary 0.25um GaAs Enhancement-mode pHEMT process. The 1.5-3.0
- Frequency Range: 1,500 to 3,000 MHz
- Minimum Gain: 15.3 dB
- Maximum Gain: 17 dB
- Noise Figure: 0.95 to 1.2 dB
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Supplier: Infineon Technologies AG
Description: BGS12P2L6 | RF Switches BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGS14WMA9 | RF Switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGS12P2L6 | RF Switches 1 2
- Features: Other
- Standards and Certifications: RoHS Compliant
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More Information Top
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Performance Evaluation of an Automatic Impedance Synthesizer Based on RF Switches
As switching elements in the tuning network we employ GaAs MMIC RF switches .
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A High Performance Monolithic GaAs SPDT Switch
SUMMARY AND CONCLUSIONS An MMIC RF switch has been presented which demonstrates broadband performance for frequencies from DC to 4 GHz.
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Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
Eq.(4) is formally identical to the expression used in MMIC RF switch for fc.o. 18 ; Rs and Rd are the source-side and drain- side access resistances and Cds is the source-to-drain capacitive coupling through the substrate.
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Simulation of CMOS interconnection with the lumped element ADI-PSTD method in wide band
As an applied example, a Si- MMIC RF switch is simulated.
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New products
10 W MMIC RF Switch .
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Mixed-mode circuit simulation with full-wave analysis of interconnections
An application example is discussed, consisting of the simulation of a Si- MMIC RF switch ; results have been compared with predictions coming from a standard microwave circuit simulator, validating the tool, and illustrating its application range.
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High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts
The C3 HJFET based RF switch MMIC was fabricated over sapphire substrate using conventional AlGaN/GaN HIFET technology.
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Current Crowding in High Performance Low-Loss HFET RF Switches
(b) Layout of low-loss SPST RF switch MMIC .
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III-nitride microwave control devices and ICs
To overcome this problem, most RF switch MMICs employ a series–shunt configuration shown in figure 2.
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2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors
A charge-coupled device (CCD) image of the RF switch MMIC is shown in Fig. 2(b).
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