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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs,
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This
- PD: 170,000 milliwatts
- TJ: -55 C
- Features: MOSFET
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing
- PD: 170,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 734377-SIHFB11N50A Manufacturer Homepage: www.vishay.com Reference case: TO-220 Reference Date Code: 09+ Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 60966-IRFSL11N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active
- V(BR)DSS: 500 volts
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 094106-IRFB11N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active
- V(BR)DSS: 500 volts
- PD: 170,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 1249874-SiHFS11N50A Manufacturer Homepage: www.vishay.com Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This
- gfs: 0.058 kS
- PD: 75 milliwatts
- TJ: -55 to 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: ODG (Origin Data Global)
Description: MOSFET N-CH 500V 11A TO262-3
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 500V 11A TO-220
- PD: 195,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 500V 11A TO-262
- V(BR)DSS: 500 volts
- rDS(on): 0.55 ohms
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
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Supplier: DigiKey
Description: N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB
- Polarity: N-Channel
- Features: Other
- Package Type: TO-220
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Description: MOSFET N-CH 500V 11A TO262-3
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 50V, 30A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET N-CH 450V 24A
- V(BR)DSS: 450 volts
- IDSS: 24,000 milliamps
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 400V 11.4A TO-220
- V(BR)DSS: 400 volts
- rDS(on): 0.53 ohms
- PD: 147,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 600V 11A TO-220F
- V(BR)DSS: 600 volts
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 500V 50A 90mΩ@10V,15A 250W 3.5V@250uA N Channel TO247 MOSFETs ROHS
- V(BR)DSS: 500 volts
- VGS(off): 3.5 volts
- rDS(on): 0.09 ohms
- PD: 250,000 milliwatts
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 500V 11A TO220AB
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Allied Electronics, Inc.
Description: 50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 50V, 3A; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.11ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Product Range:- RoHS Compliant: Yes
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Supplier: Rochester Electronics
Description: Power MOSFET 500V 10.5A 0.52 Ohm Single N-Channel TO-220FP Optimized
- Features: MOSFET, Other, Power MOSFET
- Polarity: N-Channel
- Packing Method: Shipping Tube / Stick Magazine
- Package Type: TO-220
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 60V, 50A; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC41N06S5L100 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 |
- VGS(off): 2.2 to 3.8 volts
- rDS(on): 0.0102 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Infineon Technologies AG
Description: IPD70P04P4L-08 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET IPZ40N04S5L-7R4 | Automotive MOSFET TLE9271QX V33 | OPTIREG™ DCDC SBC TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC TLF4277-2LD | OPTIREG™ linear voltage regulators (LDO) IPD70P04P4L-08 | Automotive
- VGS(off): 1.7 volts
- rDS(on): 0.0112 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8
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Supplier: Allied Electronics, Inc.
Description: MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
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Supplier: New Yorker Electronics Co., Inc.
Description: MOSFET, N-Ch, Single, 0.28A, 60V, SOT-23
- V(BR)DSS: 60 volts
- IDSS: 280 milliamps
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: ROHM Semiconductor USA, LLC
Description: RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver.
- V(BR)DSS: 50 volts
- IDSS: 200 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver.
- V(BR)DSS: 50 volts
- IDSS: 200 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: MOSFET, Power MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Applications
- V(BR)DSS: 110 volts
- IDSS: 5,000 milliamps
- VGS(off): 12 volts
- PD: 0.58 milliwatts
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Very low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge
- V(BR)DSS: 50 volts
- IDSS: 330,000 milliamps
- VGS(off): 20 volts
- PD: 270 milliwatts
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CR4 - Thread: Mosfets FB11N50A ,12NM50,13N50 - Compatible?
The MOSFETS are parts of an inverter and are with 4 in a row. One 11N50A is short, I probably will get 13N50 's from the supplier and thought .
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11N50A datasheet : Datasheets for Electronic Components and Semiconductors
11N50A datasheet HEXFET power MOSFET .