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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs,
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This
- PD: 170,000 milliwatts
- TJ: -55 C
- Features: MOSFET
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET RECOMMENDED ALT 781-SIHP12N50C-E3
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 11A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 11A, MOSFET Transistor, Single FETs, MOSFETs. This listing
- PD: 170,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 734377-SIHFB11N50A Manufacturer Homepage: www.vishay.com Reference case: TO-220 Reference Date Code: 09+ Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 60966-IRFSL11N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 190W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active
- V(BR)DSS: 500 volts
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 094106-IRFB11N50A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 170W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active
- V(BR)DSS: 500 volts
- PD: 170,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 50V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This
- gfs: 0.058 kS
- PD: 75 milliwatts
- TJ: -55 to 175 C
- MOSFET Operating Mode: Enhancement
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Supplier: ODG (Origin Data Global)
Description: MOSFET N-CH 500V 11A TO262-3
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 1249874-SiHFS11N50A Manufacturer Homepage: www.vishay.com Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 500V 11A TO-220
- PD: 195,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 500V 11A TO-262
- V(BR)DSS: 500 volts
- rDS(on): 0.55 ohms
- PD: 190,000 milliwatts
- TJ: -55 to 175 C
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Supplier: DigiKey
Description: N-Channel 500V 11A (Tc) 170W (Tc) Through Hole TO-220AB
- Polarity: N-Channel
- Features: Other
- Package Type: TO-220
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Description: MOSFET N-CH 500V 11A TO262-3
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 50V, 30A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:30A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 600V, 11A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; MSL:- RoHS Compliant: Yes
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans MOSFET N-CH 500V 4A
- V(BR)DSS: 500 volts
- IDSS: 4,000 milliamps
- PD: 75,000 milliwatts
- TJ: 150 C
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 400V 11.4A TO-220
- V(BR)DSS: 400 volts
- rDS(on): 0.53 ohms
- PD: 147,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CH 600V 11A TO-220F
- V(BR)DSS: 600 volts
- PD: 36,000 milliwatts
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 500V 50A 90mΩ@10V,15A 250W 3.5V@250uA N Channel TO247 MOSFETs ROHS
- V(BR)DSS: 500 volts
- VGS(off): 3.5 volts
- rDS(on): 0.09 ohms
- PD: 250,000 milliwatts
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Supplier: Acme Chip Technology Co., Limited
Description: MOSFET N-CH 500V 11A TO220AB
- V(BR)DSS: 500 volts
- IDSS: 11,000 milliamps
- Features: MOSFET, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Allied Electronics, Inc.
Description: 50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE
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Supplier: Rochester Electronics
Description: Power MOSFET 500V 10.5A 0.52 Ohm Single N-Channel TO-220FP Optimized
- Features: MOSFET, Other, Power MOSFET
- Polarity: N-Channel
- Packing Method: Shipping Tube / Stick Magazine
- Package Type: TO-220
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Supplier: Newark, An Avnet Company
Description: DUAL N CHANNEL MOSFET, 50V, 3A; Transistor Polarity:N Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:3A; On Resistance Rds(on):0.11ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: N CHANNEL MOSFET, 60V, 50A; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: 1EDI3031AS | Gate driver ICs 1EDI3021AS | Gate driver ICs TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC IAUC41N06S5L100 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET BSL215C | Dual MOSFET AIMBG120R080M1 | Silicon Carbide MOSFET Discretes AIMBG120R010M1 |
- VGS(off): 2.2 to 3.8 volts
- rDS(on): 0.0102 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Infineon Technologies AG
Description: IPD70P04P4L-08 | Automotive MOSFET BSS308PE | Small signal/small power MOSFET IPZ40N04S5L-7R4 | Automotive MOSFET TLE9271QX V33 | OPTIREG™ DCDC SBC TLE9261-3BQX V33 | OPTIREG™ Mid-Range+ SBC TLF4277-2LD | OPTIREG™ linear voltage regulators (LDO) IPD70P04P4L-08 | Automotive
- VGS(off): 1.7 volts
- rDS(on): 0.0112 ohms
- TJ: -55 to 175 C
- Features: Automotive, MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8
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Supplier: Allied Electronics, Inc.
Description: MOSFET, Power;N-Ch;VDSS 30V;ID 9.1 A (Control FET), 11 A (Synchronous FET);SO-8
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Supplier: New Yorker Electronics Co., Inc.
Description: MOSFET, N-Ch, Single, 0.28A, 60V, SOT-23
- V(BR)DSS: 60 volts
- IDSS: 280 milliamps
- Features: MOSFET, Other
- Polarity: N-Channel
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology Applications
- V(BR)DSS: 110 volts
- IDSS: 9,900 milliamps
- VGS(off): 1 volts
- rDS(on): 0.08 ohms
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Supplier: ROHM Semiconductor GmbH
Description: RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver.
- V(BR)DSS: 50 volts
- IDSS: 200 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver.
- V(BR)DSS: 50 volts
- IDSS: 200 milliamps
- PD: 200 milliwatts
- TJ: -55 to 150 C
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic
- V(BR)DSS: 50 volts
- IDSS: 349.99999999999994 milliamps
- VGS(off): 0.7 volts
- rDS(on): 3 ohms
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching
- V(BR)DSS: 30 volts
- IDSS: 3,400 milliamps
- VGS(off): 0.9 volts
- rDS(on): 0.102 ohms
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CR4 - Thread: Mosfets FB11N50A ,12NM50,13N50 - Compatible?
The MOSFETS are parts of an inverter and are with 4 in a row. One 11N50A is short, I probably will get 13N50 's from the supplier and thought .
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11N50A datasheet : Datasheets for Electronic Components and Semiconductors
11N50A datasheet HEXFET power MOSFET .