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Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: The S7509 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required.
- Active Area Diameter or Length: 2 mm
- Active Area Height: 10 mm
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: The S7510 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission where a wide field-of-view angle is required.
- Active Area Diameter or Length: 6 mm
- Active Area Height: 11 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: Hamamatsu Photonics
Description: Chip carrier package for surface mount The S5107 is a Si PIN photodiode sealed in chip carrier package suitable for surface mount using automated solder reflow techniques. This photodiode has a large active area, making it suitable for spatial light transmission where a
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Chip carrier package for surface mount The S5106 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission
- Active Area Diameter or Length: 5 mm
- Active Area Height: 5 mm
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response Range: 900 nm
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Supplier: OSI Optoelectronics
Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation
- Active Area Diameter or Length: 5.10E-4 mm
- Dark Current: 0.1500 nA
- Noise Equivalent Power (NEP): 2.80E-15 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: OSI Optoelectronics
Description: The Solderable photodiode chip series offer a low cost approach to applications requiring large active area photodetectors with or without flying leads for ease of assembly and / or situations where the detector is considered "disposable". They have low capacitance, moderate
- Active Area Diameter or Length: 9.2 mm
- Active Area Height: 20.7 mm
- Dark Current: 1200 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: The Solderable photodiode chip series offer a low cost approach to applications requiring large active area photodetectors with or without flying leads for ease of assembly and / or situations where the detector is considered "disposable". They have low capacitance, moderate
- Active Area Diameter or Length: 9.7 mm
- Active Area Height: 9.7 mm
- Dark Current: 600 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: conditions. These op-amps are specifically selected by OSI Optoelectronics engineers for compatibility to our photodiodes. Among many of these specific parameters are low noise. Low drift and capability of supporting a variety of gains and bandwidths determined by the external
- Active Area Diameter or Length: 2.54 mm
- Dark Current: 0.2500 nA
- Noise Equivalent Power (NEP): 1.40E-14 W/Hz½
- Operating Temperature: 0.0 to 70 C
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Supplier: MACOM
Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
- Sensitivity: 0.8000 to 0.9000 A/W
- Spectral Response: IR
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Supplier: California Eastern Laboratories - CEL
Description: The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments,
- Active Area Diameter or Length: 0.0300 mm
- Dark Current: 5 nA
- Operating Temperature: -20 to 55 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Marktech Optoelectronics
Description: Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility and options in a variety of applications ranging from fiber optics and
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1028400-MXP1005 Packaging: Bulk Categories: Optical Sensors - Photodiodes Popularity: Low Fake Threat In the Open Market: 71 pct. Supply
- RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: electronics and control/drive circuits. Features of the SFH 2701 photodiode:. 3216 ChipLED package. 400 to 1050 nm applications. Fast switching tmie. Short decay time. Operating temperature: -40 to +85 °C Spectrums Detected = Infrared, Visible Light Wavelength of Peak
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 400 to 1050 nm
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Supplier: RS Components, Ltd.
Description: electronics and control/drive circuits. Features of the SFH 2701 photodiode:. 3216 ChipLED package. 400 to 1050 nm applications. Fast switching tmie. Short decay time. Operating temperature: -40 to +85 °C Spectrums Detected = Infrared, Visible Light Wavelength of Peak
- Photodiode Package / Mounting: Other
- Spectral Response: Visible, IR
- Spectral Response Range: 400 to 1050 nm
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Win Source Part Number: 902524-VEMD8080 Operating Temperature Range: -40°C ~ 85°C Features: Photodiode 850nm 70ns 130° 8-SMD, No Lead Package: 8-SMD, No Lead Package: Reel - TR Mounting: Surface Mount Family Name: VEMD8080
- Operating Temperature: -40 to 85 C
- Package Type / Mounting: Surface Mount (SMD)
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Supplier: Win Source Electronics
Description: Manufacturer: OSRAM Opto Semiconductors Inc. Win Source Part Number: 933269-SFH 221 Operating Temperature Range: -40°C ~ 125°C Features: Photodiode 900nm 500ns 110° TO-39-4 Metal Can Package: TO-39-4 Metal Can Package: Bulk Mounting: Through Hole
- Operating Temperature: -40 to 125 C
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Supplier: Win Source Electronics
Description: of Pins: 2 Wavelength: 950 nm Width: 5 mm Rise Time: 100 ns Fall Time: 100 ns Dark Current: 2 nA Categories: Optical Sensors - Photodiodes Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount
- Package Type / Mounting: Surface Mount (SMD)
- RoHS Compliant: Yes
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Supplier: RS Components, Ltd.
Description: The VBP104S and VBP104SR series, from Vishay Semiconductor, are a family of silicon PIN photodiodes. They offer high speed and high sensitivity. The VBP104S and VBP104SR devices come in surface mount (SMD) packages containing a 4.4mm² chip. These PIN
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Other
- Spectral Response: Visible, IR
- Spectral Response Range: 430 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The VBPW34S and VBPW34SR series, from Vishay Semiconductor, are a family of silicon PIN photodiodes. They offer high speed and high sensitivity. The VBPW34S and VBPW34SR devices come in surface mount (SMD) packages containing a 7.5mm² chip. These PIN
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Other
- Spectral Response: Visible, IR
- Spectral Response Range: 430 to 1100 nm
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Supplier: Broadcom Inc.
Description: The HCPL-653K is a Class K two channel hermetically sealed optocoupler in a 20 pad leadless ceramic chip carrier with solder dipped pads and the highest level of reliability. The solder contains lead. The product is capable of operation and storage over the full military temp
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: The APDS-9008 is a low cost true 1.8V analog-output ambient photo sensor in miniature chipLED lead free surface mount package. It consists of a photo sensor, whose spectral response is close to the CIE standard photopic observer. The APDS-9008 is ideal for portable electronic devices
- Effective Area Diameter or Length: 1.6 mm
- Output Type: Voltage Output
- Photosensor Type: PN Photodiode
- Spectral Response: 565 nm
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Supplier: Acme Chip Technology Co., Limited
Description: IC PHOTODIODE RCVR C-11-1
- Device Type: Other
- Package Type: Other
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Supplier: Lingto Electronic Limited
Description: IC PHOTODIODE RCVR C-11-1
- Device Type: Other
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Supplier: Rochester Electronics
Description: OPT301 Integrated Photodiode and Amplifier In Hermetically Sealed Package
- Device Type: Other
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Renesas Electronics Corporation
Description: The ISL29030A is an integrated ambient and infrared light-to-digital converter with a built-in IR LED driver and I2C Interface (SMBus Compatible). This device uses two independent ADCs for concurrently measuring ambient light and proximity in parallel. The flexible interrupt
- Input (Supply) Voltage: 2.25 to 3.63 volts
- Sensor Type: Proximity Sensor, Light Sensor
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Supplier: ams
Description: The TCS3104 RGB Light-to-Voltage Converter combines three photodiodes with optical filters, amplifiers, and gain-switching circuitry on a single chip. The output of each channel is a voltage that is linearly proportional to light intensity (irradiance) on the corresponding
- Color Types Detected: RGB (Visible)
- Operating Temperature: 104 to 158 F
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Supplier: ams
Description: The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a trans-impedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 MO and a
- Input (Supply) Voltage: 2.7 to 5.5 volts
- Operating Temperature: -25 to 85 C
- Sensor Type: Light Sensor
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Supplier: ROHM Semiconductor GmbH
Description: BH1792GLC is optical sensor for heart rate monitor IC in which LED driver, green light and IR detection photodiode are incorporated. This device drives LED and provides the intensity of light reflected from body. LED brightness can be adjusted by LED driver current. The
- Operating Temperature: -20 to 85 C
- RoHS Compliant: Yes
- Sensor Grade / Operating Range: Consumer
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Supplier: Capella Microsystems, Inc.
Description: ALS Ambient Light Sensor (ALS) Capella's Ambient Light Sensor (ALS) is an integrated light sensing solution. It incorporates a photodiode, amplifiers and analog/digital circuits into a single chip by a CMOS process. Adoption of Capella’s patented Filtron™ technology
- Input (Supply) Voltage: 1.7 to 3.6 volts
- Package Type / Mounting: Surface Mount (SMD)
- Sensor Grade / Operating Range: Consumer
- Sensor Type: Light Sensor
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spectrophotometry. This new range of sensors offers numerous advantages. One of its hallmark features is high sensitivity across the near-infrared range of 0.9 to 2.1 µm, made possible by the combination of an InGaAs photodiode array and a CMOS chip. The (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics -
The ISL500KE is a highly integrated CMOS photo IC, widely used in diffuse reflection, cross beam curtain, through beam curtain, and similar applications The chip integrates the following features: PD photodiode receiver, LED emitter driver, Switched (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
The ISL400DE is a highly integrated CMOS photoelectric sensor IC, widely used in diffuse reflection photoelectric sensors. The chip integrates the following features: PD photodiode receiver LED emitter driver Switched-capacitor signal amplifier Mode switching (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
1. Product Overview The IMS ISL700_2A is a highly integrated CMOS photoelectric sensor that incorporates two photodiodes (PDs) and the corresponding signal processing circuits. It is widely used in background suppression photoelectric sensors based on the dual (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd.
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Indicates content that may require registration and/or purchase.
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Integrated Silicon Optoelectronics
A typical value for photodiode chips and integrated circuits is CB = 0.2–0.3pF.
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High‐frequency characterization of packaging network in TO‐CAN photodiode modules
This method is established based on the relations of the scattering parameters of the packaging network, photodiode chip , and module.
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Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules
Scattering parameters of photodiode chip , TO header and TO packaged module are measured, and the effects of TO packaging network on the high-frequency response of photodiode are investi- gated.
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Compact optical head integrated with chip elements for CD-ROM drives
This paper proposes a newly designed compact optical head, integrated with a laser diode chip, a photodiode chip , and an HOE in a small optical module, using a hybrid assembly tech- .
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Flip-chip planar GaInAs/InP p-i-n photodiodes analysis of frequency response
The metalbump formed on the p+-InPregion of the photodiode chip contains a solder metal, such as AuSn or Sn, needed for flip-chip bonding.
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Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes
Three variants of photodiode chips (see schemes in Fig. 1) were manufactured using the conventional photolithography techniques with wet chemical etch ing on one heterostructure wafer (series DV 107).
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Highly Sensitive Optical Receivers
The photodiode consists of a quaternary photodiode chip , which is stuck onto a glass socket and covered with a lens.
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High Speed InGaAs/InP Photodiodes For Applications To 40 Ghz
The design is based on a substrate illuminated photodiode chip which is flip -chip bonded onto a coplanar microwave transmission line which contains the necessary bias decoupling.
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Tunable and wavelength-selective PIN diodes
The design of the pin- photodiode chip is mainly determined by the two rivaling parameters, speed and diode diameter.
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http://pos.sissa.it/archive/conferences/143/038/RD11_038.pdf
[9] U-L-M PHOTONICS, 4 Gbps PIN Photodiode Chip , data sheet PIN-ULM-04-TN_V6.