Photodiode Chip And

Description: dynamic ranges and high open circuit voltages. These detectors are available with two 3" long leads soldered to the front (anode) and back (cathode). There are two types of photodiode chips available. "Photoconductive" series, (SXXCL) for low capacitance and fast

• Sensitivity: 0.65 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 2.3 mm
• Active Area Height: 4.2 mm

Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon

Description: Chip carrier package for surface mount The S5106 is a Si PIN photodiode sealed in chip carrier packages suitable for surface mount using automated solder reflow techniques. This photodiode has a large photosensitive area, making it suitable for spatial light transmission

• Sensitivity: 0.72 A/W
• Spectral Response Range: 320 to 1,100 nm
• Active Area Diameter or Length: 5.000000000000001 mm
• Active Area Height: 5.000000000000001 mm

Description: Surface mountable 16-element photodiode array The S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. The S8558 can be used in a wide range of applications including spectrophotometer

• Sensitivity: 0.72 A/W
• Spectral Response Range: 320 to 1,100 nm
• Dark Current: 1 nA
• Array: Array

Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation

• Sensitivity: 0.65 A/W
• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.00051 mm
• Rise Time: 26 ns

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to

• Spectral Response Range: 900 nm
• Photodiode Type: PIN Photodiode

Description: These op-amps are specifically selected by OSI Optoelectronics engineers for compatibility to our photodiodes. Among many of these specific parameters are low noise. Low drift and capability of supporting a variety of gains and bandwidths determined by the external feedback

• Sensitivity: 0.65 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 2.54 mm
• Operating Temperature: 0 to 70 C

Description: The BI-SMT product series are single channel back-illuminated photodiodes specifically designed to minimize 'dead' areas at the edge of the device. Each device is designed on a package with dimensions very similar to the chip itself. This design allows for multiple detectors to be

• Sensitivity: 0.35 to 0.59 A/W
• Spectral Response Range: 540 to 920 nm
• Active Area Diameter or Length: 2.4000000000000004 mm
• Active Area Height: 2.4000000000000004 mm

Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based devices,

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1028400-MXP1005 Packaging: Bulk Categories: Optical Sensors - Photodiodes Popularity: Low Fake Threat In the Open Market: 71 pct. Supply and Demand Status:

• Standards and Certifications: RoHS Compliant

Description: mm Rise Time: 100 ns Fall Time: 100 ns Dark Current: 2 nA Categories: Optical Sensors - Photodiodes Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount: Surface Mount RoHS: Compliant Min Operating Temperature: -55 °C REACH

• Standards and Certifications: RoHS Compliant
• Package / Mounting: Surface Mount (SMD)

Description: Manufacturer: Excelitas Technologies Win Source Part Number: 846697-C30950EH Series: C30950 Features: Photodiode Package: Box Family Name: C30950 Categories: Sensors Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Quantity per package: 30

Description: Current: 200 pA Categories: Optical Sensors - Photodiodes Case / Package: TO-5 Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 100 °C Mount: PCB, Through Hole RoHS: Compliant Min Operating Temperature: -40 °C

• Features: Other
• Standards and Certifications: RoHS Compliant
• Package / Mounting: Surface Mount (SMD)

Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature

• Sensitivity: 0.8 to 0.9 A/W
• Spectral Response Range: 1,200 to 1,650 nm
• Photodiode Type: Avalanche Photodiode
• Photodiode Package: Bare Die, Surface Mount Technology (SMT)

Description: The NR8360JP-BC is an InGaAs avalanche photodiode module in a 14-pin DIP package with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and optical test instruments,

• Sensitivity: 0.89 A/W
• Spectral Response Range: 1,310 to 1,550 nm
• Active Area Diameter or Length: 0.030000000000000002 mm
• Operating Temperature: -20 to 55 C

Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech

• Active Area Diameter or Length: 1.5 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: The HCPL-653K is a Class K two channel hermetically sealed optocoupler in a 20 pad leadless ceramic chip carrier with solder dipped pads and the highest level of reliability. The solder contains lead. The product is capable of operation and storage over the full military temp

• Isolation Voltage: 1,500 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -55 to 125 C
• Input: DC

Description: The TCS3104 RGB Light-to-Voltage Converter combines three photodiodes with optical filters, amplifiers, and gain-switching circuitry on a single chip. The output of each channel is a voltage that is linearly proportional to light intensity (irradiance) on the corresponding

• Operating Temperature: 104 to 158 F
• Color Types Detected: RGB (Visible)

Description: The TCS3103 is a RGB Light-to-Voltage Converter combining three photodiodes with optical filters, amplifiers, and gain-switching circuitry on a single chip. The output of each channel is a voltage that is linearly proportional to light intensity (irradiance) on the corresponding

• Operating Temperature: -40 to 158 F
• Color Types Detected: RGB (Visible)

Description: OPT301 Integrated Photodiode and Amplifier In Hermetically Sealed Package

• Features: Other
• Standards: RoHS Compliant

Description: The ISL29030A is an integrated ambient and infrared light-to-digital converter with a built-in IR LED driver and I2C Interface (SMBus Compatible). This device uses two independent ADCs for concurrently measuring ambient light and proximity in parallel. The flexible interrupt

• Input (Supply) Voltage: 2.25 to 3.63 volts
• Sensor Type: Light Sensor, Proximity Sensor

Description: The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a trans-impedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 MΩ and a

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -25 to 85 C
• Sensor Type: Light Sensor

Description: The TCS3472 device provides a digital return of red, green, blue (RGB), and clear light sensing values. An IR blocking filter, integrated on-chip and localized to the color sensing photodiodes, minimizes the IR spectral component of the incoming light and allows

• Color Types Detected: RGB (Visible)

Description: BH1792GLC is optical sensor for heart rate monitor IC in which LED driver, green light and IR detection photodiode are incorporated. This device drives LED and provides the intensity of light reflected from body. LED brightness can be adjusted by LED driver current. The

• Operating Temperature: -20 to 85 C
• Applications: Consumer
• Standards and Certifications: RoHS Compliant

Description: The OLS700 linear optocoupler consists of one LED that is optically coupled to two matched photodiode detectors. Photodiode detectors are used for excellent linearity. A fixed relationship is maintained between input and output due to: The photodiode on the input side

• Isolation Voltage: 1,000 volts

Description: The ISL29125 is a low power, high sensitivity, RED, GREEN and BLUE color light sensor (RGB) with an I2C (SMBus compatible) interface. Its state-of-the-art photodiode array provides an accurate RGB spectral response and excellent light source to light source variation (LS2LS).

• Input (Supply) Voltage: 2.25 to 3.63 volts
• Sensor Type: Light Sensor

Description: which the measurement of ambient light is used to control backlighting. Mobile appliances such as the mobile phones and PDAs that draw heavy current from display backlighting will benefit from incorporating these photo sensor products in their design by reducing power consumption

• Effective Area Diameter or Length: 1.6000000000000003 mm
• Spectral Response: 565 nm
• Supply Voltage: 5.5 volts
• Module Type: PN Photodiode

Description: Higher UV sensitivity than previous type, current-output type sensors with variable integration time function The S10122-256Q-01 is self-scanning photodiode arrays designed specifically as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to

• Applications: Industrial

Description: compensation circuit, a shift register, and a timing generator. The InGaAs photodiode array and the CMOS chip are electrically connected by indium bumps. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode

• Horizontal Pixels: 512
• Pixel Size: 25 µm

Description: The OLS303 is suitable for wide bandwidth analog applications. Each OLS303 has an LED and integrated photodiode transistor detector mounted and coupled in a custom hermetic surface mount Leadless Chip Carrier (LCC) ceramic package, that provides 1500 VDC of electrical

Description: Analog current output type ambient light sensor IC is composed of photodiodes, amplifiers and current mirror circuits. The output current can be converted to the voltage value by external resistor.

• Input (Supply) Voltage: 2.4 to 5.5 volts
• Operating Temperature: -40 to 85 C
• Applications: Consumer
• Sensor Type: Light Sensor