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Supplier: Accuris
Description: Thermal spraying - Acceptance inspection of thermal spraying equipment - Part 5: Plasma spraying in chambers
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Supplier: Accuris
Description: Thermal spraying \x96 Acceptance inspection of thermal spraying equipment \x96 Part 5: Plasma spraying in chambers
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Supplier: CoorsTek
Description: Chamber domes (sometimes referred to as lids) are used to create a clean, inert, and protected environment in deposition chambers. Chemical reactions inside the chamber deposit thin layers of metallic, dielectric, or semiconductive material onto the wafers. Chamber lids
- Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
- Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide
- Applications: Chemical / Materials Processing
- Shape / Form: Fabricated / Custom Shape
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Supplier: CoorsTek
Description: Rings cover the wafer edge and perimeter, protecting critical chamber components and extending their useful life. Since they are directly exposed to the deposition process, strong plasma durability and high purity are critical to final wafer yield. SEMICONDUCTOR DEPOSITION PROCESSING
- Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
- Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide
- Applications: Chemical / Materials Processing
- Shape / Form: Fabricated / Custom Shape
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Supplier: Advanced Energy Industries, Inc.
Description: Litmas is an all-in-one remote plasma source combining the power supply, LitmasMatch™ matching network, and plasma chamber into one compact chassis. Small-footprint point-of-use abatement solution Highly reliable, effective abatement with minimum utilities usage Lower cost of
- Type: RF Plasma (ICP)
- Materials / Substrates: Semiconductors / Wafers
- Features: Specialty / Other
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Supplier: Accuris
Description: Tracked Changes (Redline) \x96 Thermal spraying - Acceptance inspection of thermal spraying equipment Part 5: Plasma spraying in chambers
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Supplier: Plasma Etch, Inc.
Description: Our welded aluminum vacuum chamber encloses a generous 500 square inches of active plasma processing surface. Surface modification with Plasma Etch yields increased bond strength and cleanliness of most any surface material.
- Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
- Features: Gas Control Unit, Integral Process Controller, Other
- Type: Laboratory / Benchtop
- Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
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Supplier: Plasma Etch, Inc.
Description: As in all Plasma Etch systems a capacitive parallel plate design is used for the most effective plasma generation. Competitive units with glass/quartz barrel chambers cannot penetrate the vacuum containment vessel and therefore are restricted to inductive coupling using an RF
- Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
- Features: Integral Process Controller, MEMS, Medical, Other, Photovoltaic / Solar, Research / Surface Analysis, Semiconductor Manufacturing
- Type: Laboratory / Benchtop
- Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
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Supplier: HORIBA Instruments, Inc.
Description: capture plasma emission can be mounted directly in the vacuum chamber. The plasma emission can be guided from the vacuum chamber to the PMT unit through an optical fiber. Either option can be selected depending on situation. 2. Performs feedback control of mass flow
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Supplier: Plasma Etch, Inc.
Description: Based on our popular BT-1, it shares the same robust and reliable characteristics while providing yet another example of Plasma Etch surface modification innovation. The large all aluminum chamber accommodates a generously sized circular, rotating active processing surface has the
- Features: Automated Loading, Gas Control Unit, Integral Process Controller, Other
- Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
- Type: Factory / Free Standing
- Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
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Supplier: Plasma Etch, Inc.
Description: The generous aluminum chamber accommodates a properly sized active processing surface with our standard configurations having as few as 6 or as many as 24 plasma processing levels, each 24” by 18.” Our oxygen service vacuum pump and booster is equipped with a two point purge system to
- Features: Automated Loading, Gas Control Unit, Integral Process Controller, Other
- Materials Processed: Compound Semiconductors / GaAs, Metal, Tungsten / Refractory Metal
- Type: Factory / Free Standing
- Vacuum / Pressure Range: Medium (< 1, >10-3 torr)
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Supplier: CoorsTek
Description: Windows are chamber lids designed to transmit RF (radio frequency) and microwave energy into the plasma etch chamber while resisting erosion from the harsh plasma etch environment. An effective window has a low loss tangent (high transmittance) across RF and microwave
- Features: Alumina / Aluminum Oxide, Carbide Materials, Specialty Ceramic
- Specialty Ceramic Type: Aluminum Nitride, Silicon Carbide, Yttria
- Applications: Chemical / Materials Processing
- Shape / Form: Fabricated / Custom Shape
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Supplier: Littelfuse, Inc.
Description: RoHS compliant Ceramic chamber for ultimate reliability. Very high switching speed and high di/dt enable superior performance by ignition transformers
- Capacitance Range: 2 pF
- DC Spark-over Voltage: 402 volts
- Discharge Current: 1 amps
- Standards: RoHS
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Supplier: 3X Ceramic Parts Company Limited
Description: Ceramic Focus Ring for Plasma Etch Equipment When aluminum alloy is selected as the chamber material of the etcher, it is easy to cause metal particle pollution. Instead, a dense anodic aluminum oxide layer is coated on the aluminum alloy to improve the corrosion resistance of the
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Supplier: Advanced Energy Industries, Inc.
Description: Litmas is an all-in-one remote plasma source combining the power supply, LitmasMatch™ matching network, and plasma chamber into one compact chassis. Small-footprint point-of-use abatement solution Highly reliable, effective abatement with minimum utilities usage Lower cost of
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Supplier: Littelfuse, Inc.
Description: smallest two-electrode single chamber GDT. Up to 1kA Surge Capability in Minimal Footprint Ultra-low capacitance Surface mount form factor
- Capacitance Range: 0.5 pF
- DC Spark-over Voltage: 564 volts
- Holdover Voltage: 135 volts
- Discharge Current: 1 amps
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Supplier: SAE International
Description: oligomerization, and methane aromatization. In the multimode plasma chamber methane pyrolysis experiments, we have observed the formation of a highly dendritic form of elemental carbon which may be beneficial in the minimization of potential problems associated with carbon deposition.
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Supplier: SAE International
Description: This study clarified the influence of hot gas jet on combustion enhancement effect for lean mixture in the plasma jet ignition. The hot gas jet was generated by the high temperature plasma and was ejected from igniter after plasma jet finished issuing. In combustion tests,
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Supplier: AENOR
Description: Thermal spraying - Acceptance inspection of thermal spraying equipment - Part 5: Plasma spraying in chambers
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Supplier: AENOR
Description: Thermal spraying - Acceptance inspection of thermal spraying equipment - Part 5: Plasma spraying in chambers
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Supplier: Advanced Energy Industries, Inc.
Description: process tools with enhanced flexibility Stabilize plasma operation Improve yield for fast arc management Easily customize and configure to your process requirements Features High-power density in a streamlined design On-board chamber mount, on-tool frame mount, rack mount, and shoebox
- DC Output Power: 749.9999999999964 to 10,000.000000000002 watts
- Type: DC/DC Converter, Plasma Power Supply
- Form Factor: Rack Mount
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Supplier: PTB Sales, Inc.
Description: $7,200 ASTeX ASTRONex Fl20620 generator. 400 kHz output, 208 3φ input, 38 lbs. The MKS ASTeX ASTRONex reactive gas generator is a reactive source for chamber cleaning and other reactive gas applications. The ASTRONex uses low field toroidal plasma to dissociate input gas to produce
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Description: but identical chambers. Its basic purpose is to establish the necessary conditions defining reproducible plasma parameters that in turn allow the researcher to establish a reference RF-excited plasma enabling him to define and calibrate diagnostic measurements and theoretical
- Features: Other
- Vacuum / Pressure Range: Ultra-high Vacuum (< 10-8 torr)
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Supplier: Advanced Energy Industries, Inc.
Description: range Superior arc control Dual output available for multi-chamber production
- DC Output Voltage: 325 to 800 volts
- DC Output Current: 15.4 to 30.8 amps
- DC Output Power: 5,000.000000000001 to 10,000.000000000002 watts
- AC Input Voltage: 200 to 480 volts
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Supplier: MCA - Advanced Materials Division
Description: Semitron® MPR 1000 shapes possess excellent heat resistance and low rates of erosion in plasma chambers. Due to these characteristics, it is often chosen for vacuum chamber applications within etch, CVD, and ion implant sub segmentations in the semiconductor and electronics
- Tensile Strength (Break): 15,000 psi
- Tensile Modulus: 1,000 ksi
- Use Temperature: 500 F
- Industry: Electronics, Semiconductors / ICs
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Supplier: Hitachi High Technologies America, Inc.
Description: support these next-generation processes. The 9000 platform incorporates HHT’s new microwave ECR(Electron Cyclotron Resonance) plasma etching chamber that is proven in high volume manufacturing usage.
- Applications: Etching - Plasma / Wet
- Mounting / Loading: Floor Mounted / Stand-alone
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Supplier: Hitachi High Technologies America, Inc.
Description: Next generation memories such as FeRAM (Ferroelectric Random Access Memory), ReRAM (Resistance Random Access Memory) and MRAM (Magnetoresistive Random Access Memory) require etching of novel non-volatile materials. However, by-product adhesion inside of etch chamber causes significant
- Applications: Etching - Plasma / Wet
- Mounting / Loading: Floor Mounted / Stand-alone
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Supplier: Oerlikon Metco
Description: The F4-VB heavy-duty plasma spray gun applies coatings in a controlled atmosphere, in a process called Vacuum Plasma Spraying (VPS). The vacuum chamber contains an inert atmosphere without any active residual gasses, thus coatings produced in this system are oxide-free. Typical
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Supplier: Plasmatech, Inc.
Description: Cleaning Applications Rather than modifying the existing surface of a material, polymerizable gases can be used to create a "new". Cross contamination is not an issue since the gases are continually refreshed and evacuated out of the process chamber. Applications for plasma cleaning
- Industry Served: Electronics, Medical / Healthcare, OEM / Industrial
- Services: New / OEM Parts, Used / Damaged Parts
- Features: North America, Southern US Only, United States Only
- Capabilities: Plasma Etching / Cleaning
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Description: plasma etch equipment, primarily in the etch chamber. The rings are strategically positioned to optimize plasma distribution and maintain uniformity during the etching process. Semiconductor manufacturing processes demand operation within cleanroom environments, especially for
- Features: Alumina / Aluminum Oxide, Specialty Ceramic
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Supplier: Nilfisk Industrial Vacuums
Description: Designed for the unique cleaning requirements of the semiconductor industry, the Nilfisk SS Vapor Industrial Vacuum captures toxic gases such as arsine, phosphine, and chlorinated solvents released during the cleaning of process equipment such as molecular beam epitaxy chambers, ion
- Airflow: 87 SCFM
- Vacuum Pressure: 102 in H2O vac
- Number of Inlets: 1 #
- Minimum Particle Size Filtered: 0.3 µm
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Supplier: NBK America LLC
Description: Combine SCAPCover Cap and SNCPSSocket Head Cap Screw for Cover Cap. These caps prevent the corrosion of screw heads due to vacuum chamber processing gas and plasma. SCAPhas 2 material types as standard. SCAP-AL----Aluminum alloy SCAP-CE----Ceramic The screw connection section is made
- Length: 0.9842525 inch
- Screw Type: Cap Screw
- Metric: M12, M8
- Head Type: Socket Head Cap
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Supplier: NBK America LLC
Description: Combine SCAPCover Cap and SNCPSSocket Head Cap Screw for Cover Cap. These caps prevent the corrosion of screw heads due to vacuum chamber processing gas and plasma. SCAPhas 2 material types as standard. SCAP-AL----Aluminum alloy SCAP-CE----Ceramic The screw connection section is made
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Supplier: Linde North America, Inc.
Description: Fluorine is an active element required for all dry chamber cleaning processes. Our Generation-F® on-site fluorine generators provide the lowest cost-per-clean for plasma-enhanced or thermal CVD tool dry-chamber cleaning. Fluorine is the ideal replacement for fluorine-bearing
- Output Flow Rate: 1.3333333333333328 to 26.666666666666657 SLM
- Features: Specialty / Other
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Featured Products Top
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Remove PFAS from equipment articles such as plasma chamber furniture, vacuum and abatement systems, and sealing systems. Ducoya is designed to form replaceable OEM parts in semiconductor manufacturing equipment that operate in extreme environments, particularly plasma etching and (read more)
Browse Thermoplastics and Thermoplastic Resins Datasheets for Duvelco Limited -
Ceramic Focus Ring for Plasma Etch Equipment When aluminum alloy is selected as the chamber material of the etcher, it is easy to cause metal particle pollution. Instead, a dense anodic aluminum oxide layer is coated on the aluminum alloy to improve the corrosion (read more)
Browse Industrial Ceramic Materials Datasheets for 3X Ceramic Parts Company Limited -
Precision Polymer Engineering (PPE) has released Perlast® Helios G7HA, an FFKM sealing material for semiconductor applications proven to deliver superior plasma resistance. Precision Polymer Engineering (PPE), manufacturer of high-performance sealing technology, has (read more)
Browse O-rings Datasheets for Precision Polymer Engineering Ltd. -
-stable temperature characteristics and eliminate the piezoelectric effect. They are ideal for high-frequency power amplifiers, DC-DC converters, lighting ballasts, plasma chambers, and other demanding applications requiring robust and reliable components. FOR MORE INFORMATION: CALL: 1-800-536-1887 EMAIL: sales@newyorkerelectronics.com (read more)
Browse Ceramic Capacitors Datasheets for New Yorker Electronics Co., Inc. -
Silicon carbide wafer pins and chucks are used in plasma etch chambers, CVD systems, and ion implantation equipment for wafer support, lifting, and clamping during processing. The material must withstand aggressive plasma chemistry while maintaining dimensional stability and minimizing particle (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
Product Overview Used in plasma etch chambers, CVD systems, and ion implantation equipment for wafer clamping and lift-pin support during processing. Fountyl silicon carbide wafer pin chucks integrate the clamping surface and lift pins into a single high-purity sintered (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
Product Overview Used in plasma etch chambers, CVD systems, and PVD equipment for wafer clamping and backside gas cooling. Fountyl high-precision ring groove ceramic chucks feature machined concentric groove patterns on the wafer-facing surface. These grooves distribute (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
Fountyl manufactures electrostatic chucks (ESCs) for semiconductor wafer fabrication equipment, available in both Coulomb and Johnsen-Rahbek types. These ESCs are widely used in plasma etching, CVD, PVD, and ion implantation chambers, providing engineers with reliable wafer clamping and precise (read more)
Browse Wafer Chucks Datasheets for Fountyl Technologies Pte. Ltd. -
-- hardness >= 1500 HV and self-lubricating surface properties reduce friction in sliding contact applications. - Electrical insulation -- resistivity > 10^14 ohm.cm makes Si3N4 suitable for RF window and insulator components in plasma chambers. - Chemical stability -- resistant to molten non (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
: – Semiconductor equipment – Vacuum chambers – High voltage testing systems – Ion beam / plasma systems – UHV systems Send us your drawing or requirements – get a fast quote within 24 hours by email of sales@innovacera.com. (read more)
Browse Electroceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd.
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MSilica Nanoparticles Treated by Cold Atmospheric-Pressure Plasmas Improve the Dielectric Performance of Organic-Inorganic Nanocomposites
chamber geometries by. imposing a dielectrophoresis (DEP) force on the beads. In cDEP the electrodes are not in. direct contact with the fluid sample but are instead capacitively coupled to the mixing. chamber through thin dielectric barriers, which eliminates many of the problems. encountered
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Analysis of Visible Light Images
is positioned with a lateral view into the chamber (Fig. 1) to collect high resolution 12-bit images of unfiltered plasma emission. Digitally stored images are used to establish shot-to-shot repeatability and resolve pinch velocities during reconnection. Images are processed with peak intensity fitting
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
the Enviro Advanced Dry Strip System, is a multi-chamber, single-wafer photoresist stripper and polymer-removal tool that incorporates both microwave downstream and low-energy plasma. Singapore's STATS lowers forecast for next two quarters SINGAPORE -- Citing a slowdown in its IC-packaging, assembly
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Introduction to Semiconductor Manufacturing Technology
The glows emitted from plasma due to their excitation and relaxation reliably measure optical endpoints for plasma etch and plasma chamber cleaning processes.
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Study of surface kinetics in PECVD chamber cleaning using remote plasma source
The volume of the plasma chamber is 360 cm 3 and for a power of 7.15kW, the power density is 20 W/cm 3.
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Fundamentals of Electric Propulsion: Ion and Hall Thrusters
Figure 4-9 also schematically shows the potential in the plasma chamber .
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An experimental study and modeling of Transformer-Coupled Toroidal Plasma processing of materials
The plasma chamber wall is made of aluminum with inner surface coated with a thick Al2O3 layer to prevent Al from being etched by strong fluorine plasma.
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Current fusion power plant design concepts
Time V a r i a t i o n o f N e u t r a l Gas Pressure i n Plasma Chamber o f t h e LASL Theta Pinch .
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Atmospheric Pressure Plasma for Surface Modification
By modifying key parameters such as high frequency power levels, plasma chamber pressure, gas mixtures, gas flow rates, and dwell (exposure) time, a prescribed plasma chemistry can introduce useful changes to a substrate surface.
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Design considerations for achieving high vacuum integrity in fusion devices
All tokamaks are characterized by a toroidal plasma chamber .
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INTOR critical issue D: maintainability. Tritium containment and personnel access vs remote maintenance, Chapter VI of the US INTOR report for Phase Two A, Pa...
It should be pointed out that for the personnel access case, personnel are never permitted in the reactor cell during or after the removal of a component which opens the plasma chamber (torus).
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New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes
This requires a perfect control of the plasma chamber wall conditions.
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Scaling of microwave slot antenna (SLAN): a concept for efficient plasma generation
In slot antenna (SLAN) type plasma sources the microwave power is coupled from an annual waveguide (ring cavity) through equidistantly positioned resonant coupling slots into the plasma chamber made of quartz.