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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT323
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Supplier: Allied Electronics, Inc.
Description: Germanium Mesa Transistor, PNP, for High-Speed Switching Applications, TO18 Package Type
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-SPEED SWITCHING TYPE 2N604
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD41C Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically
- VCEO: -100 volts
- IC(max): -6 milliamps
- PD: 15 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically
- VCEO: -100 volts
- IC(max): -3 milliamps
- PD: 15 milliwatts
- TJ: 150 C
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- VCEO: -80 volts
- IC(max): -8 milliamps
- PD: 20 milliwatts
- TJ: 150 C
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Supplier: Allied Electronics, Inc.
Description: Small Signal Transistor, PNP Transistor Type, -60 V Collector to Emitter Voltage +175 °C maximum operating temperature Designed for high speed saturated switching and general purpose applications.
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a SOT323 plastic package. PNP complement: PMST2907A. Features and benefits High current (max. 600 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications High-speed switching and linear amplification.
- Features: Other
- Package Type: SOT323
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
- Polarity: PNP
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
- Polarity: PNP
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Supplier: ROHM Semiconductor GmbH
Description: 2SA2071P5 is a power transistor for high speed switching.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: 2SA2088U3 is the high speed switching transistor for small signal low frequency amplifier, high speed switching
- PD: 200 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Features: Other, Tape Reel
- Polarity: PNP
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Supplier: Allied Electronics, Inc.
Description: TO-39 Package Type, Small Signal PNP Transistors Silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are designed for high speed saturated switching and general purpose applications.
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Supplier: Rochester Electronics
Description: PNP Silicon Epitaxial Transistor for High-Speed Switching
- Polarity: PNP
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Supplier: Acme Chip Technology Co., Limited
Description: PNP HIGH SPEED SWITCHING TRANSIS
- VCEO: 60 volts
- IC(max): 3,000 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: PNP HIGH SPEED SWITCHING TRANSIS Product overview: 2SA2071P5T100 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- VCEO: 60 volts
- fT: 180 MHz
- PD: 2 milliwatts
- TJ: 150 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE Product overview: UPA1453H from NEC Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Trans GP BJT PNP 60V 5A Automotive 3-Pin(3+Tab) MP-3 / PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING Product overview: 2SA1648 from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver
- Transistor Type: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Trans GP BJT PNP 60V 15A Automotive 3-Pin(3+Tab) TO-220 Isolated / PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING Product overview: 2SA1744 from NEC Corporation is a Bipolar Transistor for signal amplification, switching, driver
- Transistor Type: Bipolar RF Transistors
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Supplier: Allied Electronics, Inc.
Description: Switch Settings High-Speed Response Up to 5 kHz, Can Be Scaled to 10 kHz Accepts Voltage and Non-Voltage Inputs, PNP/NPN Selectable NEMA4/IP66 Front (Screw Terminal Models) Call Allied Electronics for Models with Transistor Outputs
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Supplier: Infineon Technologies AG
Description: external PNP transistor - 5V in load sharing configuration or 5V/3.3V in stand-alone configuration, protected features for off-board usage. Current limitation by shunt resistor (up to 350mA with 470mΩ external shunt resistor) in stand-alone configuration High-Speed CAN
- Output Voltage (Volt): 5 volts
- Features: Other
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Supplier: Infineon Technologies AG
Description: General Purpose High-Voltage In- and Outputs (GPIOs) configurable as add. Fail Outputs, Wake Inputs, Low-Side switches or High-Side switches Three universal High-Voltage Wake Inputs for voltage level monitoring Alternate High-Voltage Measurement Function, e.g. for battery
- Output Voltage (Volt): 5 volts
- Features: Other
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Supplier: Infineon Technologies AG
Description: PROFET™ + 12/24/48V | automotive smart high-side switch BTS7040-1EPA | PROFET™ +2 12V | automotive smart high-side switch BTS5090-2EKA | PROFET™ + 12V | automotive smart high-side switch AUIR3241STR | Gate driver ICs BTS5090-1EJA | PROFET™ + 12V | automotive smart
- Output Voltage (Volt): 5 volts
- Features: Other
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Supplier: Specialty Product Technologies
Description: Independent display of background total Programmable help function and secondary legend display Dual preset units - Preset 1 programmable as absolute value or pre-warn which tracks Preset 2 Choice of NPN or PNP primary input Filter speed settable for 20, 200, or 10,000 Hz Standard
- Number of Digits (or Characters): 5
- Mounting: DIN Rail Mount
- Sensor & Specialized Inputs: Encoder
- Programming: Keypad
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Supplier: Specialty Product Technologies
Description: Independent display of background total Programmable help function and secondary legend display Dual preset units - Preset 1 programmable as absolute value or pre-warn which tracks Preset 2 Choice of NPN or PNP primary input Filter speed settable for 20, 200, or 10,000 Hz Standard
- Number of Digits (or Characters): 5
- Programming: Computer Programmable, Keypad
- Mounting: DIN Rail Mount
- Sensor & Specialized Inputs: Encoder
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Supplier: Infineon Technologies AG
Description: High-Voltage In- and Outputs (GPIOs) configurable as add. Fail Outputs, Wake Inputs,Low-Side switches or High-Side switches Three universal High-Voltage Wake Inputs for voltage level monitoring Alternate High-Voltage Measurement Function, e.g. for battery voltage sensing
- Output Voltage (Volt): 5 volts
- Features: Other
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Supplier: RS Components, Ltd.
Description: PNP transistor 3A SOT23,PBSS5320T
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: TSC America Inc. Win Source Part Number: 769727-BC857B RFG Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products
- TJ: -55 to 150 C
- Power Gain: 220 dB
- Output Power: 0.2 watts
- Operating Frequency: 100 MHz
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -100mA, -80V, 220-475hFE, SOT-23
- VCEO: -80 volts
- IC(max): -100 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1124034-2N6040 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~
- TJ: -65 to 150 C
- Power Gain: 1,000 dB
- Output Power: 75 watts
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 929396-NST3906DXV6T1 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 500mW Surface Mount SOT-563 Package: Bulk Package: SOT-563, SOT-666 Mounting: Surface Mount
- TJ: -55 to 150 C
- Transistor Type: Bipolar RF Transistors
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191389-JAN2N3792 Series: Military, MIL-PRF-19500/379 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-3 Power - Max: 5W Transistor Type: PNP Family Name: 2N3792
- TJ: -65 to 200 C
- Power Gain: 30 dB
- Output Power: 5 watts
- Features: Bulk Pack, Other
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Transition Frequency (fT): 300MHz, excellent for high-frequency applications Complementary PNP Transistor: SMMBT3906LT3G for push (read more)
Browse Transistors Datasheets for Win Source Electronics -
complex working conditions such as high-speed continuous rotation, frequent start-stop switching and long-term full-load operation. It effectively solves the common defect of unstable RF signal output of traditional split rotary joints in dynamic rotating state, and greatly improves the overall (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
drive high-speed silicon and GaN FETs thanks to the high current capability, short propagation delay of 45 ns in typical conditions, and operation with a supply voltage down to 5 V. The dV/dt immunity is high: ±200 V/ns. The STDRIVEG600 is a robust driver featuring overtemperature protection (read more)
Browse Gate Drivers Datasheets for DigiKey -
The SMMBT3904LT3G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier applications. This small-signal transistor is a testament to ON Semiconductor's commitment to providing reliable and efficient electronic (read more)
Browse Thermistors Datasheets for Win Source Electronics -
at least 4 ms in high-speed applications where switch-ON signals could be missed. Features such as an additional cable clip and supplemental onboard LED aid in easy installation and commissioning in the field as does the sensor's configurability. The sensor also ships with label-holders at each cable extremity, making it easier to document the sensor in the field. (read more)
Browse Pressure Switches Datasheets for Festo Corporation -
The ALD1107 MOSFET is a high-precision P-channel MOSFET transistor array by Advanced Linear Devices. Its low threshold voltage of -0.7V, low input capacitance, and typical offset voltage of only 2mV make it ideal for analog switching and amplifying (read more)
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. Because the sensor detects metal through an electromagnetic field, it does not need to physically touch the target. This eliminates the mechanical contact wear, impact, and contact bounce associated with traditional limit switches. The XS118BLNAL2 is therefore suitable for high (read more)
Browse Automotive Electrical Connectors Datasheets for ERSAELECTRONICS PTE. LTD. -
creepage wide body, 16-lead SOIC_IC. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers. The isolators operate with (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
ideal for precision signal switching and amplifying in +2V to +10V systems, delivering low input bias current, low input capacitance, and fast switching speed. The MOSFET features a matched transistor pair, ensuring minimal offset voltage and consistent thermal responses. With a low threshold (read more)
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response. It is designed for precision signal switching and amplifying applications in +2V to +10V systems where low input bias current, minimal input capacitance, and fast switching speed are desired. The matched pair is suitable for use in precision applications that require very high current (read more)
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Page 11. Semiconductor parts with 133 in root number
PNP transistor for high - speed switching applications .
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SA13 datasheet : Datasheets for Electronic Components and Semiconductors
PNP transistor for high - speed switching applications .
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2SA1331 datasheet : Datasheets for Electronic Components and Semiconductors
PNP transistor for high - speed switching applications .
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SANYO Electric Co., Ltd. 2SA1339 Series Datasheets. 2SC3393, 2SA1339 Datasheet.
PNP transistor for high - speed switching applications in 3-pin SPA package.
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SANYO Electric Co., Ltd. 2SA1331 Series Datasheets. 2SA1331, 2SC3361 Datasheet.
PNP transistor for high - speed switching applications in 3-pin CP package.
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Page 15. Semiconductor parts with 331 in root number
PNP transistor for high - speed switching applications .
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http://www.nxp.com/documents/data_sheet/PMD5002K.pdf
PNP switching transistor and high - speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
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http://www.nxp.com/documents/data_sheet/PMD5001K.pdf
PNP transistor and high - speed switching diode to protect the base-emitter junction in reverse direction in a SOT346 (SC-59A/TO-236) small Surface-Mounted Device (SMD) plastic package.
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Page 4. Semiconductor parts with 453 in root number
PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE .
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ksa1 datasheet : Datasheets for Electronic Components and Semiconductors
PNP transistor , high speed high voltage switching .