Pnp Low Noise Transistors

Description: Bipolar Transistors - BJT PNP Low Noise

• V_CEO: 60 volts
• I_C(max): 500 milliamps
• P_D: 625 milliwatts
• Number of Transistors in the Chip: 1

Description: Silicon PNP Transistors

Description: Silicon PNP Transistors

Description: PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V). AEC-Q101 qualified Applications Low noise input stages of audio frequency equipment.

• h_fe: 220 to 475
• V_CEO: 30 volts
• I_C(max): 100 milliamps
• P_D: 250 milliwatts

Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise AEC-Q101 qualified Applications Low level,

• h_fe: 180 to 310
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 250 milliwatts

Description: PNP transistor in a very small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Applications Low noise input stages of audio-frequency equipment

• h_fe: 475
• V_CEO: -45 volts
• I_C(max): -100 milliamps
• P_D: 250 milliwatts

Description: PNP transistor in a very small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complements: BC849B Features and benefits Low current (max. 100 mA) Low voltage (max. 30V) Applications Low noise input stages of audio-frequency equipment

• h_fe: 475
• V_CEO: -30 volts
• I_C(max): -100 milliamps
• P_D: 250 milliwatts

Description: Bipolar Transistors - BJT PNP Low Noise

• Transistor Type: Bipolar RF Transistors

Description: Low Noise, MATCHED Dual PNP Transistor

• Features: Other
• Polarity: PNP

Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25

• h_fe: 50 to 75
• V_CEO: 36 volts
• V_CBO: -36 to -40 volts
• I_C(max): -10 to -20 milliamps

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications

• I_C(max): 100 milliamps
• V_CEO: 30 volts
• V_CBO: 30 volts
• f_T: 250 MHz

Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, PNP SILICON PLANAR, LOW NOISE AUDIO AMPLIFIER. 45V, 200MA, -65 TO +200 C. FREE 2 YEAR RADWELL WARRANTY

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 50 volts
• f_T: 250 MHz

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q107 Potential Applications For AF

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 45 volts
• f_T: 250 MHz

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 45 volts
• f_T: 250 MHz

Description: PNP - Low Noise Amplifier Transistor Chip

• Transistor Type: Darlington

Description: Trans GP BJT PNP 8V 0.03A 3-Pin S-Mini / TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Product overview: 2SA1245 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal

• Transistor Type: Bipolar RF Transistors

Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low

• Noise Figure: 2.4 dB
• Polarity: NPN
• Features: Other

Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in

• Transistor Type: MOSFET

Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in

• Transistor Type: MOSFET

Description: PNP transistor 3A SOT23,PBSS5320T

• Number of Transistors in the Chip: 1
• Transistor Type: General Purpose BJT
• Features: Other
• Polarity: PNP

Description: Manufacturer: TSC America Inc. Win Source Part Number: 769727-BC857B RFG Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products

• T_J: -55 to 150 C
• Power Gain: 220 dB
• Output Power: 0.2 watts
• Operating Frequency: 100 MHz

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• P_D: 2,000 milliwatts
• T_J: -65 to 150 C
• Transistor Type: Bipolar RF Transistors, Darlington
• Features: Other

Description: Transistor, PNP, -100mA, -80V, 220-475hFE, SOT-23

• V_CEO: -80 volts
• I_C(max): -100 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor,

• P_D: 580 milliwatts
• T_J: -65 C
• Transistor Type: MOSFET
• Polarity: NPN, PNP

Description: Manufacturer: ON Semiconductor Win Source Part Number: 1124034-2N6040 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~

• T_J: -65 to 150 C
• Power Gain: 1,000 dB
• Output Power: 75 watts
• Features: Other, Shipping Tube / Stick Magazine

Description: Trans GP BJT PNP 40V 1A 485mW 3-Pin MPAK / IC MOSFET DRIVER SC-59A Product overview: PMD5003K from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and

• Transistor Type: MOSFET
• Features: Other
• Polarity: PNP

Description: Manufacturer: ON Semiconductor Win Source Part Number: 929396-NST3906DXV6T1 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 500mW Surface Mount SOT-563 Package: Bulk Package: SOT-563, SOT-666 Mounting: Surface Mount

• T_J: -55 to 150 C
• Transistor Type: Bipolar RF Transistors
• Features: Other
• Polarity: PNP

Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191389-JAN2N3792 Series: Military, MIL-PRF-19500/379 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-3 Power - Max: 5W Transistor Type: PNP Family Name: 2N3792

• T_J: -65 to 200 C
• Power Gain: 30 dB
• Output Power: 5 watts
• Features: Bulk Pack, Other

Description: Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Through Hole TP

• Features: Other
• Polarity: PNP

Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6

• Transistor Grade / Operating Range: Military
• Polarity: NPN, PNP
• Features: Other

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 175
• V_CEO: 40 volts
• V_CBO: 60 volts
• I_C(max): 600 milliamps

Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39

• I_C(max): 5,000 milliamps
• P_D: 1,000 milliwatts
• T_J: -65 to 200 C
• Number of Transistors in the Chip: 1

Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

• V_CEO: -12 volts
• I_C(max): -500 milliamps
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial

Description: Bipolar (BJT) Single Transistor, PNP, -65 V, 200 MHz, 200 mW, -100 mA, 290 RoHS Compliant: Yes