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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT PNP Low Noise
- VCEO: 60 volts
- IC(max): 500 milliamps
- PD: 625 milliwatts
- Number of Transistors in the Chip: 1
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Allied Electronics, Inc.
Description: Silicon PNP Transistors
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Supplier: Nexperia B.V.
Description: PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V). AEC-Q101 qualified Applications Low noise input stages of audio frequency equipment.
- hfe: 220 to 475
- VCEO: 30 volts
- IC(max): 100 milliamps
- PD: 250 milliwatts
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70H Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise AEC-Q101 qualified Applications Low level,
- hfe: 180 to 310
- VCEO: -45 volts
- IC(max): -100 milliamps
- PD: 250 milliwatts
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Supplier: Nexperia B.V.
Description: PNP general-purpose transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX70K Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V) Low noise AEC-Q101 qualified Applications Low level,
- hfe: 380 to 630
- VCEO: -45 volts
- IC(max): -100 milliamps
- PD: 250 milliwatts
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Supplier: Nexperia B.V.
Description: PNP transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complements: BC849BW Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V) AEC-Q101 qualified Applications Low noise stages in tape recorders,
- hfe: 220 to 475
- VCEO: 30 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PNP Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: Low Noise, MATCHED Dual PNP Transistor
- Features: Other
- Polarity: PNP
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25
- hfe: 50 to 75
- VCEO: 36 volts
- VCBO: -36 to -40 volts
- IC(max): -10 to -20 milliamps
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 1) Potential
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, PNP SILICON PLANAR, LOW NOISE AUDIO AMPLIFIER. 45V, 200MA, -65 TO +200 C. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q107 Potential Applications For AF
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications
- IC(max): 100 milliamps
- VCEO: 30 volts
- VCBO: 30 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011) Potential Applications
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 250 MHz
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: PNP - Low Noise Amplifier Transistor Chip
- Transistor Type: Darlington
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Trans GP BJT PNP 8V 0.03A 3-Pin S-Mini / TRANSISTOR (HIGH FREQUENCY AMPLIFIER AND SWITCHING, VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Product overview: 2SA1245 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal
- Transistor Type: Bipolar RF Transistors
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Noise Figure: 4.6 dB
- Polarity: NPN
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
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Supplier: RS Components, Ltd.
Description: PNP transistor 3A SOT23,PBSS5320T
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: TSC America Inc. Win Source Part Number: 769727-BC857B RFG Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP Frequency - Transition: 100MHz Categories: Discrete Semiconductor Products
- TJ: -55 to 150 C
- Power Gain: 220 dB
- Output Power: 0.2 watts
- Operating Frequency: 100 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 8A, TO220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 8A, TO220, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- PD: 2,000 milliwatts
- TJ: -65 to 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Features: Other
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, PNP, -1.0A, -50V, SOT-23
- VCEO: -50 volts
- IC(max): -1,000 milliamps
- Transistor Type: General Purpose BJT
- Features: Other, Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1191389-JAN2N3792 Series: Military, MIL-PRF-19500/379 Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -65°C ~ 200°C (TJ) Package: TO-3 Power - Max: 5W Transistor Type: PNP Family Name: 2N3792
- TJ: -65 to 200 C
- Power Gain: 30 dB
- Output Power: 5 watts
- Features: Bulk Pack, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Trans GP BJT PNP 40V 1A 485mW 3-Pin MPAK / IC MOSFET DRIVER SC-59A Product overview: PMD5003K from NXP Semiconductors is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and
- Transistor Type: MOSFET
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 929396-NST3906DXV6T1 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 200mA 250MHz 500mW Surface Mount SOT-563 Package: Bulk Package: SOT-563, SOT-666 Mounting: Surface Mount
- TJ: -55 to 150 C
- Transistor Type: Bipolar RF Transistors
- Features: Other
- Polarity: PNP
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1124034-2N6040 Packaging: Tube Mounting Style: Through Hole Transistor Type: PNP - Darlington Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Status: Obsolete Temperature Range - Operating: -65°C ~
- TJ: -65 to 150 C
- Power Gain: 1,000 dB
- Output Power: 75 watts
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: RS Components, Ltd.
Description: Trans Darlington PNP 60V 5A TO220
- Number of Transistors in the Chip: 1
- Transistor Type: Darlington
- Features: Other
- Polarity: PNP
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 3A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 3A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer
- PD: 15,000 milliwatts
- TJ: 150 C
- Transistor Type: Bipolar RF Transistors, Darlington
- Features: Other
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Supplier: DigiKey
Description: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 100mA 250MHz 200mW Surface Mount UMT3F
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor PNP 30V 6A 180MHz 1W Surface Mount HUML2020L3
- Features: Other
- Polarity: PNP
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6
- Transistor Grade / Operating Range: Military
- Polarity: NPN, PNP
- Features: Other
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- hfe: 175
- VCEO: 40 volts
- VCBO: 60 volts
- IC(max): 600 milliamps
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Supplier: Utmel Electronic Limited
Description: Trans GP BJT PNP 100V 5A 3-Pin TO-39
- IC(max): 5,000 milliamps
- PD: 1,000 milliwatts
- TJ: -65 to 200 C
- Number of Transistors in the Chip: 1
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A very low noise preamplifier for extremely low frequency magnetic antenna
The second stage is a common-emitter amplifier us- ing low noise PNP transistor 2SA1190 with a Darlington struc- ture, which can increase apparent hFE and accordingly increase the total gain ahead of the negative feedback.
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A high sensitivity spectrometer for millimetre waves
3.3 Performance The first detector used was a 1N53(Heinzman and Tang 1965) while the amplifier employed low noise PNP transistors biased for best gain-bandwidth and minimum noise (Alley and Attwood 1973).
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